Abstract: An apparatus including: circuitry configured to enable a delay of a process performed responsive to a detected processing event; and an configuration interface configured to enable pre-configuration by a user of at least one of one or more attributes of the delay, the process or the processing event.

Abstract: An integrated circuit device comprising at least one self-test component arranged to execute self-testing within at least one self-test structure during a self-test execution phase of the IC device, and at least one clock control component arranged to provide at least one clock signal to the at least one self-test component at least during the self-test execution phase of the IC device. The at least one clock control component is further arranged to receive at least one indication of at least one power dissipation parameter for at least a part of the IC device, and modulate the at least one clock signal provided to the at least one self-test component based at least partly on the received at least one power dissipation parameter for at least a part of the IC device.

Abstract: In an integrated circuit, a clock monitor circuit detects when an analog clock signal output by an on-chip crystal oscillator has stabilized. The clock monitor circuit uses an envelope follower circuit to monitor the envelope of the analog clock signal and compare the amplitude of the envelope with a predetermined amplitude value. When the predetermined value is reached and the envelope has remained steady for a predetermined time, an oscillator okay signal is generated. If an oscillator okay signal is not detected within another predetermined time, then an oscillator failure signal may be generated.

Abstract: An integrated circuit package comprising a substrate and at least one semiconductor die is described. A connection unit may provide electrical connections between the substrate and the semiconductor die. The connection unit may comprise a stack of conduction layers and isolation layers stacked atop each other. The stack may include a microstrip line or a coplanar waveguide. The microstrip line or the coplanar waveguide may be part of a balun, a power divider, or a directional coupler.

Abstract: A low resistance polysilicon (poly) structure includes a first poly coupled to a substrate and having a sidewall. A second poly is separated from the sidewall of the first poly and the substrate by a programming oxide. The first poly and the second poly have substantially a same planarized height above the substrate. The first poly extends from a device region to a strap region, and extends substantially parallel to a first length of the second poly. A second length of the second poly extends away from the first poly in the strap region and includes a salicide. A first diffusion region crosses the first poly and the second poly in the device region. A masked width of the first length of the second poly is defined by an etched spacer. A low resistance contact is coupled to the second length of the second poly in the strap region.

Abstract: An electronic apparatus includes a packaging enclosure, first and second die pads disposed within the packaging enclosure, first and second semiconductor die disposed on the first and second die pads, respectively, a plurality of packaging leads, each packaging lead projecting outward from the packaging enclosure, a plurality of packaging posts disposed within the packaging enclosure and extending inward from opposite sides of the packaging enclosure between the first and second die pads, each packaging post being connected with a respective one of the plurality of packaging leads, and a plurality of wire bonds disposed within the packaging enclosure. Each packaging post of the plurality of packaging posts is connected via a first wire bond of the plurality of wire bonds to the first semiconductor die and via a second wire bond of the plurality of wire bonds to the second semiconductor die.

Abstract: A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area and spaced from the body region to define a conduction path of the device, the drain region having the second conductivity type. The device isolating region and the body region are spaced from one another to establish a first breakdown voltage lower than a second breakdown voltage in the conduction path.

Abstract: A semiconductor device is formed such that a semiconductor substrate of the device has a non-uniform thickness. A cavity is etched at a selected side of the semiconductor substrate, and the selected side is then fusion bonded to another substrate, such as a carrier substrate. After fusion bonding, the side of the semiconductor substrate opposite the selected side is ground to a defined thickness. Accordingly, the semiconductor substrate has a uniform thickness except in the area of the cavity, where the substrate is thinner. Devices that benefit from a thinner substrate, such as an accelerometer, can be formed over the cavity.

Abstract: A charge pump system includes a comparator having a first input coupled to a first reference voltage, a second input coupled to a feedback signal and an output coupled to control operation of a voltage controlled oscillator. The feedback signal is coupled to an output of the charge pump system. An amplifier has a first input coupled to a second reference voltage, a second input coupled to the feedback signal, and an output coupled as input to the voltage controlled oscillator. A gain of the amplifier is lower than a gain of the comparator.

Abstract: A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last metal interconnect structures.

Abstract: An integrated circuit ESD protection circuit (270) is formed with a combination device consisting of a gated diode (271) and an output buffer MOSFET (272) where the body tie fingers of a first conductivity type (307) are formed in the substrate (301, 302) and isolated from the drain regions of a second conductivity type (310) using a plurality of diode poly fingers (231, 232) which are interleaved with a plurality of poly gate fingers (204, 205) forming the output buffer MOSFET (272).

Abstract: An apparatus for and a method of making a hierarchical integrated circuit design of an integrated circuit design, a computer program product and a non-transitory tangible computer readable storage medium are provided. The apparatus comprises an input for receiving an hierarchical integrated circuit design, a selector for selecting a candidate output pin, a cloner for adapting the hierarchical integrated circuit design, a re-connector for adapting the hierarchical integrated circuit design, and an output for outputting the adapted hierarchical circuit design. Optionally, the apparatus comprises a timing improver. The apparatus selects a candidate output pin of an IP block that is a node on at least two timing paths that have contradictory timing violations. The candidate output pin is cloned and at least one of the timings paths is connected to the cloned output pin for one of the instances of the IP block.

Abstract: A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.

Abstract: A system for migrating stash transactions includes first and second cores, an input/output memory management unit (IOMMU), an IOMMU mapping table, an input/output (I/O) device, a stash transaction migration management unit (STMMU), a queue manager and an operating system (OS) scheduler. The I/O device generates a first stash transaction request for a first data frame. The queue manager stores the first stash transaction request. When the first core executes a first thread, the queue manager stashes the first data frame to the first core by way of the IOMMU. The OS scheduler migrates the first thread from the first core to the second core and generates pre-empt notifiers. The STMMU uses the pre-empt notifiers to update the IOMMU mapping table and generate a stash replay command. The queue manager receives the stash replay command and stashes the first data frame to the second core.

Abstract: A microcontroller operable in a high power mode and a low power unit (LPU) run mode includes primary and LPU domains, primary and LPU mode controllers, and primary and LPU clock generator modules. The primary domain includes a first set of circuits and a first set of cores. The LPU domain includes second and third sets of circuits, a second set of cores, and a switching module. In the high power mode, the switching module connects the first and second sets of cores to at least one of the first, second and third sets of circuits, while in the LPU run mode, the switching module isolates the LPU domain from the primary domain and activates a small microcontroller system (SMS) that includes the LPU domain, the LPU mode controller and the LPU clock generator module. The SMS has further low power modes within the LPU run mode.

Abstract: Disclosed is a digital processor comprising an instruction memory having a first input, a second input, a first output, and a second output. A program counter register is in communication with the first input of the instruction memory. The program counter register is configured to store an address of an instruction to be fetched. A data pointer register is in communication with the second input of the instruction memory. The data pointer register is configured to store an address of a data value in the instruction memory. An instruction buffer is in communication with the first output of the instruction memory. The instruction buffer is arranged to receive an instruction according to a value at the program counter register. A data buffer is in communication with the second output of the instruction memory. The data buffer is arranged to receive a data value according to a value at the data pointer register.

Abstract: A Universal Serial Bus (USB) controller includes a USB transceiver to detect a high-speed (HS) disconnect between the USB controller and a device connected to it. The USB transceiver includes a reference-voltage generation circuit, a HS current driver, first and second comparators, and a multiplexer. The reference-voltage generation circuit generates HS disconnect and transmitter reference-voltage signals that have a constant voltage difference. The first comparator receives DP and DM signals that correspond to a HS Start of Frame (SOF) packet during HS disconnect detection, and generates a control voltage. The multiplexer outputs at least one of the DP and DM signals based on the logic state of the control voltage. The second comparator receives the selected signal and the HS disconnect reference-voltage signal, and outputs a HS disconnect output voltage signal when the selected signal is greater than the HS disconnect reference-voltage signal.

Abstract: A two-way Doherty amplifier for amplifying a modulated or non-modulated carrier signal, said carrier signal having a carrier frequency; wherein the Doherty amplifier comprises a first amplifier having a first amplifier output node, a second amplifier having a second amplifier output node, a combining node connected or connectable to a load, a first amplifier output line connecting the first amplifier output node to the combining node, and a second amplifier output line connecting the second amplifier output node to the combining node, and wherein the first amplifier output line has an electrical length of substantially one quarter wavelength of the carrier signal and the second amplifier output line has an electrical length of substantially one half wavelength of the carrier signal.

Abstract: A method and apparatus are provided for manufacturing a lead frame based thermally enhanced flip chip package with an exposed heat spreader lid array (310) designed for direct attachment to an array of integrated circuit die (306) by including a thermal interface adhesion layer (308) to each die (306) and encapsulating the attached heat spreader lid array (310) and array of integrated circuit die (306) with mold compound (321) except for planar upper lid surfaces of the heat spreader lids (312).

Abstract: An apparatus including: an input interface configured to enable user configuration of a future time window; and a report interface configured to produce a report relating to a first sub-set of a plurality of active timers that expire at programmed future points in time, wherein the first sub-set of the plurality of active timers expire during the user-configured future time window.