Abstract: An ESD protection device is fabricated in a semiconductor substrate that includes a semiconductor layer having a first conductivity type. A first well implantation procedure implants dopant of a second conductivity type in the semiconductor layer to form inner and outer sinker regions. The inner sinker region is configured to establish a common collector region of first and second bipolar transistor devices. A second well implantation procedure implants dopant of the first conductivity type in the semiconductor layer to form respective base regions of the first and second bipolar transistor devices. Conduction of the first bipolar transistor device is triggered by breakdown between the inner sinker region and the base region of the first bipolar transistor device. Conduction of the second bipolar transistor device is triggered by breakdown between the outer sinker region and the base region of the second bipolar transistor device.

Abstract: A video processing device for generating an output video stream on the basis of two or more concurrent input video streams and a method thereof are described. Each input video stream comprises a sequence of input images. The output video stream comprises a sequence of output images. The video processing device generates each output image by merging a respective set of input images. The set of input images comprises one input image from each input video stream. The video processing device merges the input images in a series of merging rounds. Each merging round comprises forming an output tile by merging a set of input tiles, and writing the output tile to an output memory unit. The set of input tiles comprises one input tile from each input image of the respective set of input images. The output tiles written to the output memory unit represent the output image.

Abstract: An apparatus is provided. The apparatus includes a flip-flop including an input configured to receive a setup time and delay control (SDC) signal, and an output buffer including first and second conductive paths. The second conductive path is non-conductive when the SDC signal has a first value at the input and is conductive when the SDC signal has a second value at the input. The apparatus includes a propagation delay sensor configured to estimate a propagation delay of the flip-flop, and, when the estimated propagation delay exceeds a threshold, supply the SDC signal having the second value to the input of the flip-flop.

Abstract: A Schottky diode includes a device structure having a central portion and a plurality of fingers. Distal portions of the fingers overlie leakage current control (LCC) regions. An LCC region is relatively narrow and deep, terminating in proximity to a buried layer of like polarity. Under reverse bias, depletion regions forming in an active region lying between the buried layer and the LCC regions occupy the entire extent of the active region and thereby provide a carrier depleted wall. An analogous depletion region occurs in the active region residing between any pair of adjacent fingers. If the fingers include latitudinal oriented fingers and longitudinal oriented fingers, depletion region blockades in three different orthogonal orientations may occur. The formation of the LCC regions may include the use of a high dose, low energy phosphorous implant using an LCC implant mask and the isolation structures as an additional hard mask.

Abstract: Methods and systems are disclosed for adaptive scheduling queue control based upon page hit distance determinations. A threshold occupancy value is determined for a window of previous access requests to a memory and used to adaptively control a number of access requests stored in a scheduling queue buffer. For certain embodiments, a page hit distance (PHD) determination for each access request and historical page hit distance data is used to adjust the threshold occupancy value that determines the number (N) of access requests stored in the buffer prior to removing an access request and using it to access the memory. For each access request, the page hit distance represents the number of previously received access requests since the last access request to access the same page of memory. An average PHD can be determined over a number (M) of previous access requests and used to control the threshold occupancy value.

Abstract: A system for calibrating a power amplifier (PA) includes a memory, a processor, a digital pre-distorter (DPD), and a data converter. The DPD includes a programming interface module, a pattern generator, a multiplier, and a pre-distorter module. The multiplier multiplies reference baseband stream data from the memory with pattern coefficient data generated by the pattern generator to generate shaped reference baseband stream data. The pre-distorter module generates pre-distorted shaped reference baseband stream data. The PA receives a low-power reference radio frequency (RF) signal corresponding to the pre-distorted shaped reference baseband stream data and generates a high-power reference RF signal.

Abstract: A method of forming a semiconductor device includes forming a first gate layer over a substrate in the NVM region and the logic region; forming an opening in the first gate layer in the NVM region; forming a charge storage layer in the opening; forming a control gate over the charge storage layer in the opening; patterning the first gate layer to form a first patterned gate layer portion over the substrate in the logic region and to form a second patterned gate layer portion over the substrate in the NVM region, wherein the second patterned gate layer portion is adjacent the control gate; forming a dielectric layer over the substrate around the first patterned gate layer portion and around the second patterned gate layer portion and the control gate, and replacing the first patterned gate layer portion with a logic gate comprising metal.

Abstract: A method and circuit for a data processing system provide virtualized instructions for accessing a partitioned device (e.g., 14, 61) by executing a control instruction (47, 48) to encode and store an access command (CMD) in a data payload with a hardware-inserted partition attribute (LPID) for storage to a command register (25) at a physical address (PA) retrieved from a special purpose register (46) so that the partitioned device (14, 61) can determine if the access command can be performed based on local access control information.

Abstract: An integrated circuit including a degradation monitoring circuit. The degradation monitoring circuit includes a comparison circuit having a delay element including an input coupled to a data node of a timing path and having an output to provide a delayed signal of a data signal of the data node. The comparison circuit includes a logic comparator that provides a logic comparison between a data signal of the data node and the output of the delay element. The monitoring circuit includes a sampling circuit that provides a sampled signal of the output of the logic comparator that is a sampled with respect to a clock signal of the clock signal line. The monitoring circuit includes a hold circuit that provides a signal indicative of a data signal of the data node transitioning within a predetermined time of an edge transition of a clock signal of the clock signal line.

Abstract: A data processing apparatus includes a processing unit having first and second modes of operation for processing data, including receiving data packets from a sender and sending acknowledgements to the sender the second mode of operation requires more power than the first mode, and the processing unit switches between the first and second modes of operation based on a processing load; a metric module for determining a metric indicative of the processing load; an acknowledgement module for sending one acknowledgement in respect of n received data packets; and an acknowledgement configuration module for setting n to be a value m greater than a first predetermined value if the metric lies in a predetermined range that includes a value that the metric assumes when the processing unit switches between the first mode of operation and the second mode of operation, and to the first predetermined value otherwise.

Abstract: A method (30) of forming a semiconductor package (20) entails applying (56) an adhesive (64) to a portion (66) of a bonding perimeter (50) of a base (22), with a section (68) of the perimeter (50) being without the adhesive (64). A lid (24) is placed on the base (22) so that a bonding perimeter (62) of the lid (24) abuts the bonding perimeter (50) of the base (22). The lid (24) includes a cavity (25) in which dies (38) mounted to the base (22) are located. A gap (70) is formed without the adhesive (64) at the section (68) between the base (22) and the lid (24). The structure vents from the gap (70) as air inside the cavity (25) expands during heat curing (72). Following heat curing (72), another adhesive (80) is dispensed in the section (68) to close the gap (70) and seal the cavity (25).

Abstract: A current-starved inverter circuit includes first and second current-mirror circuits, first and second transistors, a detector, and a current-booster. The first and second transistors receive a first source current and a first sink current from the first and second current-mirror circuits, respectively, and an input voltage signal, and generate an inverted input voltage signal (an output voltage signal). The detector generates a first detection signal when the output voltage signal exceeds a first threshold value and a second detection signal when the output voltage signal is less than a second threshold value. The current-booster, which is connected to the detector, receives the first and second detection signals and provides a second source current and a second sink current to the first and second transistors to pull-up and pull-down a voltage level of the output voltage signal, respectively.

Abstract: A method and apparatus are used to predistort input signal samples according to Volterra Series Approximation Model using one or more digital predistortion blocks (300) having a plurality of predistorter cells (301-303), each including an input multiplication stage (366-367) for combining absolute sample values received from an absolute sample delay line (362) into a first stage output, a lookup table (368) connected to be addressed by the first stage output for generating an LUT output, and a plurality of output multiplication stages (371-372, 373-374) for combining the LUT output with samples received from the amplitude sample delay line (362) and signal sample delay line (363) to generate an output signal sample yQ from said predistorter cell, where the output signal samples yQ from the predistorter cells are combined at an output adder circuit (375) to generate one or more Volterra terms of a combined signal (yOUT[n]).

Abstract: A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having multiple vertically-stacked inertial transducer elements (101B, 110D) formed in different layers of a multi-layer semiconductor structure (100) and one or more cap devices (200, 300) bonded to the multi-layer semiconductor structure (100) to protect any exposed inertial transducer element from ambient environmental conditions.

Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.

Abstract: Microelectromechanical system (MEMS) devices and methods for forming MEMS devices are provided. The MEMS devices include a substrate, an anchored structure fixedly coupled to the substrate, and a movable structure resiliently coupled to the substrate. The movable structure has an opening formed therethrough and is positioned such that the anchored structure is at least partially within the opening and is in a capacitor-forming relationship with the movable structure. The movable structure comprises a movable structure finger extending only partially across the opening.

Abstract: An apparatus for sensing current of a vehicle battery employs an extended counting analogue-to-digital conversion process to a chopped and amplified voltage appearing across a low ohmic shunt resistor placed between the negative pole of the vehicle's battery and the chassis ground of the vehicle. Gain adjustment control of a programmable gain amplifier by matching the gain to the dynamic range of the ADC permits a high dynamic signal sensing.

Abstract: A method of fabricating a bipolar transistor device includes performing a first plurality of implantation procedures to implant dopant of a first conductivity type to form emitter and collector regions laterally spaced from one another in a semiconductor substrate, and performing a second plurality of implantation procedures to implant dopant of a second conductivity type in the semiconductor substrate to form a composite base region. The composite base region includes a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions.

Abstract: A system on a chip comprises a managing processor for controlling operations of the system on a chip. The managing processor comprises a core monitor control logic circuit operable to: receive at least one instruction; determine whether the instruction is an activation instruction; determine whether the managing processor is in or transitioning to an idle state; and transition the managing processor from a first mode of operation to a second mode of operation in response to the instruction being an activation instruction and the managing processor being in or transitioning to an idle state.

Abstract: A gate drive circuit drives a control terminal of a power transistor and comprises: a drive terminal for electrically coupling the control terminal, a first reference source, a first switch arranged between the first reference source and the control terminal, a switch control circuit and a measurement circuit. The first switch is switched-on to turn-off the power transistor. The switch control circuit switches-off the first switch during a transition period to a fully off-state. The measurement circuit outputs a control signal to the switch control circuit in response to a value of a voltage at the control terminal measured when a discharge current flowing to the drive terminal has been reduced to a predetermined threshold, for switching-on the first switch if the measured value is smaller than a threshold voltage.