Abstract: Video processing system, computer program product and method for managing an exchange of information between a memory unit and a decoder, the method includes: (a) retrieving, from the memory unit, a first non-zero data structure that comprises only non-zero first transform coefficient groups; wherein first transform coefficient groups are associated with a first quality level; (b) retrieving, from the memory unit, second layer information; (c) processing, by the video decoder, the second layer information and the first non-zero data structure to provide second transform coefficient groups; (c) generating, by the video decoder, a second non-zero data structure that comprises only non-zero second transform coefficient groups; wherein the second non-zero data structure is associated with a second quality level that is higher than the first quality level; (d) generating second non-zero indicators that are indicative of non-zero transform coefficient groups, wherein the second non-zero data structure is associated

Abstract: Methods for forming electronic assemblies are provided. A device substrate having a plurality of electronic components embedded therein is provided. The device substrate is attached to a carrier substrate using an adhesive material. A plurality of cuts are formed through the device substrate to divide the device substrate into a plurality of portions. Each of the plurality of portions includes at least one of the electronic components. A force is applied to each of the plurality of portions in a direction away from the carrier substrate to remove the plurality of portions from the carrier substrate.

Abstract: Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

Abstract: A method and apparatus are described for integrating high voltage (HV) transistor devices and medium voltage or dual gate oxide (DGO) transistor devices with low voltage (LV) core transistor devices on a single substrate, where each high voltage transistor device (160) includes a metal gate (124), an upper high-k gate dielectric layer (120), a middle gate dielectric layer (114) formed with a relatively lower high-k dual gate oxide layer, and a lower high voltage gate dielectric stack (108, 110) formed with one or more low-k gate oxide layers (22), where each DGO transistor device (161) includes a metal gate (124), an upper high-k gate dielectric layer (120), and a middle gate dielectric layer (114) formed with a relatively lower high-k dual gate oxide layer, and where each core transistor device (162) includes a metal gate (124), an upper high-k gate dielectric layer (120), and a base oxide layer (118) formed with one or more low-k gate oxide layers.

Abstract: Methods and receiver circuits are provided for correlating an incoming signal with PN codes. An embodiment of the method includes receiving I/Q baseband samples in the I/Q domain; converting the I/Q baseband samples to phase baseband samples; generating a pseudonoise (PN) code; converting the PN code to PN phase data; performing a correlation on the phase baseband samples using the PN phase data to generate correlated I/Q values; performing an adding operation on the correlated I/Q values to generate demodulated I/Q values; converting the demodulated I/Q values into demodulated phase values; performing a frequency correction operation on the demodulated phase values to generate frequency correction data; converting the demodulated I/Q values into demodulated magnitude values; and performing signal decoding and synchronization on the magnitude values to generate output data. The operation of performing correlation on the phase baseband samples using the PN phase data is accomplished using scalar subtraction.

Abstract: Methods and systems are disclosed for adjusting read/verify bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems having a NVM controller, a bias voltage generator, and an NVM cell array. Further, the NVM systems can store performance degradation information and read/verify bias condition information within storage circuitry. The disclosed embodiments adjust read/verify bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations.

Abstract: A capacitor suitable for inclusion in a semiconductor device includes a substrate, a first metallization level, a capacitor dielectric, a capacitor plate, an interlevel dielectric layer, and a second metallization level. The first metallization level overlies the substrate and includes a first metallization plate overlying a capacitor region of the substrate. The capacitor dielectric overlies the first metallization plate and includes a dielectric material such as a silicon oxide or silicon nitride compound. The capacitor plate is an electrically conductive structure that overlies the capacitor dielectric. The interlevel dielectric overlies the capacitor plate. The second metallization layer overlies the interlevel dielectric layer and may include a second metallization plate and a routing element. The routing element may be electrically connected to the capacitor plate. The metallization plates may include a fingered structure that includes a plurality of elongated elements extending from a cross bar.

Abstract: A method for minimizing soft error rates within caches by configuring a cache with certain sections to correspond to bitcell topologies that are more resistant to soft errors and then using these sections to store modified data.

Abstract: There is provided a method of placing a plurality of operational cells of a semiconductor device within a semiconductor layout, comprising determining timing data for each of the plurality of operational cells, determining switching activity from RTL or design constraints for each of the plurality of operational cells, determining power grid switch locations relative to each of the plurality of operational cells, deriving a cost function based upon the determined timing data, determined switching activity from RTL/design constraints and determined relative power grid switch locations and initially placing the plurality of operational cells according to the derived cost function.

Abstract: A circuit for configuring an external memory includes a memory controller, a register, an OR gate, first and second input/output (IO) pads, and pull-up and pull-down resistors. When the circuit is in a high power mode, the memory controller refreshes the external memory by providing reset and clock enable signals to the external memory by way of the first and second IO pads. When the circuit is in a low power mode, the pull-up and pull-down resistors configure the external memory in a self-refresh mode. When the circuit exits the low power mode, the first and second IO pads are powered on. The OR gate receives and provides a control signal output by the register to the external memory by way of the first IO pad, which keeps the external memory in the self-refresh mode.

Abstract: A diagnostic circuit is provided that includes a FET having a source connected to a first node, a drain, and a gate; a first switch connecting a current-supply node to one of the gate and a second node; a second switch connecting the first node and the second node; a variable current source providing one of a drive current and a test current to the current-supply node; a fire current source configured to provide a fire current to the drain; an error-detecting circuit connected to the second node, a reference terminal, and an error node, the error-detecting circuit generating an error signal to the error node indicating whether an error-detecting parameter at the second node exceeds a reference parameter at the reference terminal; and a control circuit generating control signals to control the variable current source, and the first and second switches.

Abstract: An electronic circuit includes an illustrative low voltage CMOS power on reset circuit. The electronic circuit can comprise a power on reset circuit coupled between a supply voltage terminal and a signal node. The illustrative power on reset circuit comprises a voltage detector coupled to the supply voltage terminal which is configured to track CMOS thresholds and deactivate when supply voltage reaches a level for proper operation of CMOS logic.

Abstract: A voltage regulation apparatus comprises a plurality of individually switchable current sources coupled to an output for coupling the voltage regulation apparatus to an external load. The output is monitored using a bridge divider and a comparator. The bridge divider generates a feedback voltage, that is compared with a reference voltage, representative of a target voltage to be maintained at the output, when loaded. A digital sequencer unit is coupled to the comparator and responds to the comparator to increase or decrease a number of the plurality of individually switchable current sources activated, thereby causing a collective current generated by the activated number of the plurality of individually switchable current sources to converge on a load current, demanded by the external load.

Abstract: An integrated circuit (IC) device includes a plurality of metal layers having metal traces, and a plurality of vias interconnecting the metal traces. The presence of vacancies within the metal layers may disrupt the functionality of the IC device if the vacancies migrate to the vias interconnecting the metal layers. To mitigate vacancy migration, stressor elements are formed at the metal traces to form stress effects in the metal traces that, depending on type, either serve to repel migrating vacancies from the via contact area or to trap migrating vacancies at a portion of the metal trace displaced from the contact area. The stressor elements may be formed as stress-inducing dielectric or conductive material overlying the metal traces, or formed by inducing a stress memory effect in a portion of the metal trace itself.

Abstract: An information processing device comprises a first memory, a second memory, data transfer circuitry, power gating circuitry, and a controller. The first memory comprises at least two volatile memory units. The controller receives or generates a request for setting the information processing device into a reduced power mode; in response to the request, it selects specific memory units among the memory units; controls the data transfer circuitry to transfer data from the selected memory units to the second memory; and controls the power gating circuitry to power down the selected memory units.

Abstract: A buffer or voltage protection circuit, a circuit including same, and an associated method of operation are disclosed. In one example embodiment, the integrated circuit includes a first input terminal, a first circuit portion having a second input terminal, and a second circuit portion. The second circuit portion includes a transistor device having first, second, and third ports, where the first and second ports are respectively electrically coupled to the first input terminal and second input terminal, respectively. Additionally, the second circuit portion also includes a diode-type device that is electrically coupled between the third port and either a power source or a power input terminal, and a buffer/driver circuit and a capacitor coupled in series between the third and second ports. The second circuit portion operates to prevent the second input terminal from being exposed to an undesirably-high voltage level.

Abstract: A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. A method of operating a semiconductor device is also disclosed.

Abstract: A semiconductor device, comprising a substrate and an electronic circuit formed thereon is described. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor, which comprises a sensing line for sensing the potential at a charge collecting region; a supply node; and a current source connected between the supply node and the charge collecting region. The current source is arranged to inject a stationary current into the charge collecting region when the potential at the charge collecting region is below the supply potential. The sensing line comprises a monoflop, which is arranged to assume an unstable state when the potential at its input has exceeded a threshold and to return to a stable state when the potential at its input has remained below the threshold for at least a time period.

Abstract: A variable-bias power amplifier is provided, comprising: a first variable voltage source generating first bias voltages based on bias control signals; a first amplifier circuit amplifying an output RF signal to generate a first amplified signal based on the first bias voltages; a second variable voltage source generating second bias voltages based on the bias control signals; a second amplifier circuit amplifying the output RF signal to generate a second amplified signal based on the second bias voltages; and a DC isolation circuit between the first amplifier circuit and the second amplifier circuit, electrically isolating DC currents at the first amplifier from DC currents at the second amplifier, wherein the first variable voltage source can be controlled independently from the second variable voltage source, and the first amplifier circuit, the second amplifier circuit, and the DC isolation circuit are all formed on a single die.

Abstract: A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.