Abstract: A system on chip, comprising a processing unit for executing processes, a memory unit, and a memory control unit connected between the processing unit and the memory unit, is described. The memory control unit allocates a memory region to a process. The memory control unit comprises a process activity counter which counts a duration of the process or transactions by the process to or from the memory region and which maintains a process activity count representing the counted duration of the process or the counted transactions to or from the memory region. The memory control unit disables the memory region in response to the process activity count exceeding a maximum process activity count. Notably, it blocks the memory region against further transactions by the process and against transactions by any other processes. A method of operating a system on chip is also described.

Abstract: A first storage location at a memory management unit stores physical address information mapping logical physical addresses to actual physical addresses. A second storage location stores an allowed address range of actual physical addresses. A memory management unit determines whether a write access to the first storage location is allowable. The access is to store memory mapping information relating to a first actual physical address. The memory management unit prevents the write access if the first actual physical address is not in the allowed address range, and does not prevent the write access if the first actual physical address is in the allowed address range. The memory management unit prevents a write access to the second storage location by a process that is not running in a hypervisor mode.

Abstract: An integrated circuit includes an input/output “I/O” cell arranged to drive an output signal and an activity analysis unit arranged to generate an activity factor based on the output signal. The activity factor represents a switching activity intensity of the I/O cell. The switching activity intensity is associated with an ageing effect of the I/O cell. The circuit further includes a calibration unit arranged to generate a switching pattern signal based on the generated activity factor and an I/O calibration cell arranged to be driven by the switching pattern signal, wherein the switching pattern signal emulates the ageing effect of the I/O cell.

Abstract: A method for a packaged leadless semiconductor device including a heat sink flange to which semiconductor dies are coupled using a high temperature die attach process. The semiconductor device further includes a frame structure pre-formed with bent terminal pads. The frame structure is combined with the flange so that a lower surface of the flange and a lower section of each terminal pad are in coplanar alignment, and so that an upper section of each terminal pad overlies the flange. Interconnects interconnect the die with the upper section of the terminal pad. An encapsulant encases the frame structure, flange, die, and interconnects with the lower section of each terminal pad and the lower surface of the flange remaining exposed from the encapsulant.

Abstract: A system and method for frequency-selective demodulation is presented. An input signal is received that is modulated by frequency shift keying (FSK) and encodes data at a first and second frequency. The input signal is supplied to a plurality of estimators that include a first estimator configured to detect a first signal at the first frequency, a second estimator configured to detect a second signal at the second frequency, a third estimator configured to detect a third signal at a third frequency, and a fourth estimator configured to detect a fourth signal at a fourth frequency. An output is generated indicating receipt of the data encoded at the first frequency or the second frequency based upon outputs of the first estimator, the second estimator, the third estimator, and the fourth estimator.

Abstract: An integrated circuit (IC) device includes a plurality of metal layers having metal traces, and a plurality of vias interconnecting the metal traces. The presence of vacancies within the metal layers may disrupt the functionality of the IC device if the vacancies migrate to the vias interconnecting the metal layers. To mitigate vacancy migration, stressor elements are formed at the metal traces to form stress effects in the metal traces that, depending on type, either serve to repel migrating vacancies from the via contact area or to trap migrating vacancies at a portion of the metal trace displaced from the contact area. The stressor elements may be formed as stress-inducing dielectric or conductive material overlying the metal traces, or formed by inducing a stress memory effect in a portion of the metal trace itself.

Abstract: A method generates scan patterns for testing an electronic device called DUT having a scan path. A scan tester is arranged for executing a scan shift mode and a capture mode. A scan test interface has a clock control unit for stretching a shift cycle of the scan clock in dependence of a scan clock pattern. The method determines at least one power shift cycle which is expected to cause a voltage drop of a supply voltage exceeding a predetermined threshold during respective shift cycles of the scan shift mode, and generates, in addition to the scan pattern, a scan clock pattern indicative of stretching the power shift cycle. Advantageously, a relatively high scan shift frequency may be used while avoiding detrimental effects of said voltage drop by extending the respective power shift cycle, whereby test time and yield loss are reduced.

Abstract: An integrated circuit device comprises at least one clock monitor. The at least one clock monitor comprises a timer arranged to receive a clock signal, generate a first timing signal arranged to toggle between states in response to a trigger edge of the clock signal, and generate a second timing signal arranged to toggle between states in response to a trigger edge of the clock signal such that a state transition of the second timing signal in response to a trigger edge of the clock signal is delayed by a period T with respect to the trigger edge of the clock signal in response to which that transition occurs. The at least one clock monitor further comprises a detector arranged to receive at a first input thereof the first timing signal, receive at a second input thereof the second timing signal, compare states of the first and second timing signals, and configure an indication of a timing discrepancy based at least partly on the comparison of the first and second timing signals.

Abstract: A method of testing the coherency of data storage in a memory shared by multiple processor cores through core interconnects in a device under test (DUT) includes running test patterns including data transactions between the processor cores and the shared memory, and comparing the results of the data transactions with expected results. The test patterns include false sharing operations and irritator operations causing memory thrashing.

Abstract: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes forming one or more redistribution layers over an encapsulated die having a frontside bond pad area and a frontside passivated non-bond pad area. The redistribution layers are formed to have a frontside opening over the non-bond pad area of the encapsulated die. A primary heat sink body is provided in the frontside opening and thermally coupled to the encapsulated die. A contact array is formed over the redistribution layers and is electrically coupled to a plurality bond pads located on the frontside bond pad area of the encapsulated die.

Abstract: A device (300, 1000) provides a dual-edge triggered flip-flop (DETFF) that is reconfigurable to a master-slave flip-flop (MSFF). The device includes a reconfigurable MUX-D flip-flop including two distinct circuit configurations. In a first configuration, two latches or storage elements (340, 360, 1040, 1060) are operating in series to provide a MUX-D flip-flop. In a second configuration, the storage elements (340, 360, 1040, 1060) are operating in parallel to provide a dual-edge triggered flip-flop (DETFF).

Abstract: Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.

Abstract: A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a first well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a second well region adjacent the first well region, having the second conductivity type, and having a higher dopant concentration than the first well region, to establish a path to carry charge carriers of the second conductivity type away from a parasitic bipolar transistor involving a junction between the channel region and the source region.

Abstract: A clock signal generation system is provided that includes a clock signal generating circuit arranged to provide a first clock signal having a selectable first clock rate; a divider circuit connected to receive the first clock signal and arranged to generate, depending on a division factor, a second clock signal from the first clock signal, having a constant second clock rate and being synchronized with the first clock signal; and a controller module connected to the divider circuit and arranged to change the division factor when a different first clock rate is selected, to keep the second clock rate constant and the second clock signal synchronized with the first clock signal.

Abstract: A semiconductor device comprises conductive buses and conductive bridges. A respective conductive bridge is conductively coupled to at least two portions of at least one of the conductive buses. At least N plus one (N+1) vias are coupled between every one of the conductive bridges and a respective feature in an integrated circuit when: (1) a width of the respective conductive bridge is less than a width of each of the at least two portions of the at least one of the conductive buses to which the respective conductive bridge is coupled, and (2) a distance along the respective conductive bridge and at least one of the vias is less than a critical distance. N is a number of conductive couplings between the respective one of the conductive bridges and the at least one of the conductive buses.

Abstract: A computer-implemented method of configuring a semiconductor device includes identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device, and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect. Each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect, and the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.

Abstract: The embodiments described herein provide antifuse devices and methods that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes an antifuse, a first diode coupled with the antifuse in a parallel combination, and a second diode coupled in series with the parallel combination. In such an embodiment the first diode effectively provides a bypass current path that can reduce the voltage across the antifuse when other antifuses are being programmed. As such, these embodiments can provide improved ability to tolerate programming voltages without damage or impairment of reliability.

Abstract: An electronic device is for controlling multiple switching power circuits in a power supply system. Each switching power circuit has a power clock for controlling switching of a supply side switch that enables charging. The device has respective power clock delay units. Each respective power clock delay unit provides a respective power clock at a predetermined delay based on a respective input clock. The respective predetermined delays are chosen so that said switching of respective different supply side switches occurs at respective different points in time. Advantageously the conducted emission in high frequency bands is reduced.

Abstract: A method for parasitic capacitance extraction for integrated circuit (IC) designs fabricated involving multiple patterning that includes identifying, at a computing system, metal features in a metal layer of an IC design and generating, at the computing system, a graph based on spacing relationships between the metal features. The method further includes predicting, at the computing system, which metal features are to be formed by the same mask in the multiple patterning lithography process from the graph. The method further can include performing, at the computing system, a parasitic capacitance extraction analysis of the IC design utilizing the prediction of which metal features are to be formed by the same mask, and performing, at the computing system, timing analysis on the IC design utilizing the list of vertices sharing the same designators and the parasitic capacitance extraction calculations.

Abstract: A method of obtaining run-time information associated with executing an executable is described. The method comprises receiving an external database comprising one or more external debugging information entries, retrieving the one or more external debugging information entries from the external database and storing the one or more external debugging information entries retrieved from the external database in a debugging information entries collection. The method further comprises providing the debugging information entries collection to a debugging information consumer, and obtaining the run-time information from letting the debugging information consumer retrieve run-time values and format the run-time values according to the external debugging information entries in the debugging information entries collection.