Abstract: During a program operation of a fuse cell of a fuse circuit, all of a group of select transistors of a fuse cell are made conductive to program the fuse cell. During a test operation of a fuse cell of the fuse circuit, less than all of the group of select transistors are made conductive so that current less than a programming current flows through the fuse cell.

Abstract: A MEMS resonator system comprises a MEMS resonator, kick start circuitry, feedback circuitry, an oscillator, and a switch. The MEMS resonator system is configured to provide a pulsed kick-start signal having a frequency and period such that energy delivered to the MEMS resonator is optimized in a short period of time, resulting is reduced oscillator startup time. The MEMS resonator system is configured to switch out the kick-start signal when the MEMS resonator oscillation has been achieved, and switch in feedback circuitry to maintain the MEMS resonator in a state of oscillation.

Abstract: A data processing system includes a module for generating and distributing random masks to a number of cryptographic accelerators while providing for fewer total interconnects among the components generating the random masks. The module segments the tasks associated with generating random masks across a number of modules and blocks such that routing and timing problems can be minimized and layout can be optimized. A method for generating and distributing random masks to a number of cryptographic accelerators is also provided. The random masks are utilized by cryptographic accelerators to protect secret keys, and data associated with those keys, from discovery by unauthorized users.

Abstract: Methods are disclosed for extending floating gate regions within floating gate cells to form sub-lithographic features. Related floating gate cells and non-volatile memory (NVM) systems are also disclosed. In part, the disclosed embodiments utilize a spacer etch to form extended floating gate regions and floating gate slits with sub-lithographic dimensions thereby achieving desired increased spacing between control gate layers and doped regions underlying floating gate structures while still allowing for reductions in the overall size of floating-gate NVM cells. These advantageous results are achieved in part by depositing an additional floating gate layer over previously formed floating gate regions and then using the spacer etch to form the extended floating gate regions as sidewall structures and sub-lithographic floating gate slits. The resulting floating gate structures reduce breakdown down risks, thereby improving device reliability.

Abstract: A device includes a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite body region disposed in the semiconductor substrate and having a second conductivity type. The composite body region includes a first well region that extends laterally across the source and drain regions and a second well region disposed in the first well region. The drain region is disposed in the second well region such that charge carriers flow from the first well region into the second well region to reach the drain region. The second well region includes dopant of the first conductivity type to have a lower net dopant concentration level than the first well region. A pocket may be disposed in a drain extension region and configured to establish a depletion region along an edge of a gate structure.

Abstract: A packaged electronic device including an electronic device, a conductive structure, and an encapsulant. The encapsulant has chlorides and a negatively-charged corrosion inhibitor for preventing corrosion of the conductive structure.

Abstract: A memory unit comprises at least two volatile memory elements, analyzing circuitry and power gate. The memory elements may for example be latches, flip-flops, or registers. Each of the memory elements has at least two different states including a predefined reset state. The analyzing circuitry generates a power-down enable signal in response to each of the memory elements being in its reset state. The power gate powers down the memory elements in response to the power-down enable signal. The memory elements may be arranged to assume their reset states upon powering up the memory unit.

Abstract: A memory device includes a plurality of sense amplifiers, an array of memory cells including a first subset of memory cells, and a plurality of word lines. Each word line is coupled to each memory cell in a respective row of the memory cells and each row of the memory cells includes one memory cell of the first subset of memory cells. Each of a plurality of control word lines is coupled to a respective one of the memory cells in the first subset of memory cells and each of the memory cells in the first subset of memory cells generates a sense amplifier control signal coupled to control operation of a respective one of the plurality of sense amplifiers.

Abstract: Circuit embodiments of a multistage voltage regulator circuit are presented, where a circuit includes a first stage that includes a first bias transistor having a current terminal coupled to a first regulated node. The circuit also includes a second stage that includes a second bias transistor having a current terminal coupled to a second regulated node. The circuit also includes a third stage including a third bias transistor having a current terminal coupled to a third node. The circuit also includes a control loop for regulating voltages at the first and second regulated nodes, where the second regulated node is connected to a control terminal of the first bias transistor; and where the first regulated node is connected to a control terminal of the third bias transistor.

Abstract: A system and method are present for generating a modulated waveform. A timer is configured to generate a first modulated waveform signal, and an adder module is configured to calculate a delay. The delay includes at least one of an edge fractional delay and a dead time fractional delay. A delay module is operably coupled to the timer and the adder module. The delay module is configured to delay at least one of a rising edge of the first modulated waveform signal and a falling edge of the first modulated waveform signal by the delay to generate a second modulated waveform signal that has a higher frequency resolution than a frequency resolution of the first modulated waveform signal.

Abstract: A method of debugging software for an Integrated Development Environment connected to a target hardware system and to a simulator configured to simulate the target hardware system. The method comprises receiving, by a debugging tool of the Integrated Development Environment, simulator debugging data from the simulator, receiving, by the debugging tool, hardware debugging data from the target hardware system, comparing, by the debugging tool, the hardware debugging data with the simulator debugging data; and indicating, by the debugging tool, the result of comparing the hardware debugging data with the simulator debugging data.

Abstract: Task context information is transferred concurrently from a processor core to an accelerator and to a context memory. The accelerator performs an operation based on the task context information and the context memory saves the task context information. The order of transfer between the processor core is based upon a programmable indicator. During a context restore operation information is concurrently provided to data bus from both the accelerator and the processor core.

Abstract: A network node of a wireless communication network comprises a receiver receiving an input signal from a remote transmitter of the wireless communication system via a transmission channel. A signal to noise ratio calculator is arranged to calculate a signal to noise ratio of the received input signal. A soft bit normalizer is arranged to determine a plurality of normalized soft bits using the input signal. A primary detector is arranged to detect a discontinuous transmission on the transmission channel using the plurality of the normalized soft bits and the signal to noise ratio, and if a discontinuous transmission on the transmission channel is detected, generate a DTX-decision or else trigger a refinement detector. The refinement detector is arranged to decode the normalized soft bits and to generate a further decision about whether the signal indicates a discontinuous transmission on the transmission channel using the decoded normalized soft bits.

Abstract: There is provided a network node of a wireless communication network, such as a UMTS network. The network node is arranged to perform a method of detecting Signal Discontinuous Transmission on a channel in the wireless communication network. The method comprises the receiving of a signal on the channel and the processing of a current slot of the signal, the current slot comprising a number of pilot bits and non-pilot bits. A bit error rate, a signal to noise ratio and an amplitude modulus is calculated using the pilot bits and non-pilot bits. A decision is made about whether the signal indicates a discontinuous transmission on the channel using the signal to noise ratio, the bit error rate and the amplitude modulus.

Abstract: Aspects of the invention relate to an integrated circuit device and method of production thereof. The integrated circuit device comprises at least one application semiconductor die comprising at least one functional component arranged to provide application functionality, at least one functional safety semiconductor die comprising at least one component arranged to provide at least one functional safety undertaking for the at least one application semiconductor die, and at least one System in Package, SiP, connection component operably coupling the at least one functional safety semiconductor die to the at least one application semiconductor die to enable the at least one functional safety semiconductor die to provide the at least one functional safety undertaking for the at least one application semiconductor die.

Abstract: A debug configuration tool for configuration of on-chip debug features comprises a database comprising predefined analysis points, each relating to a configurable chip entity, and comprising a configurable condition and a configurable action for the chip entity, a plurality of predefined analysis groups, each relating to a group of configurable chip entities, and comprising a configurable condition and a configurable action for the group of chip entities. The tool comprises a graphical user interface module arranged to display representations of at least some of the analysis points and the analysis groups on different levels of detail, and to receive input from a user to set the configurable conditions and/or actions for the displayed analysis points and the analysis groups. An application program interface module processes data received from the graphical user interface module to obtain debug settings and to communicate the debug settings to a debug target system configuration module.

Abstract: A method of evaluating a capacitive interface including discharging the capacitive interface to a lower voltage, timing while applying a unit charge to the capacitive interface until a voltage of the capacitive interface rises to a reference voltage and determining a corresponding charge time value, charging the capacitive interface to an upper voltage that is greater than the reference voltage, and timing while removing the unit charge from the capacitive interface until a voltage of the capacitive interface falls to the reference voltage and determining a corresponding discharge time value. The charge and discharge time values may be used to evaluate the capacitive interface by determining capacitance and leakage current. The time values may be determined using a counter. A capacitive interface evaluation system for evaluating the capacitive interface may include a charge circuit, a comparator, a counter and a controller.

Abstract: A semiconductor device, related package, and method of manufacturing same are disclosed. In at least one embodiment, the semiconductor device includes a radio frequency (RF) power amplifier transistor having a first port, a second port, and a third port. The semiconductor device also includes an output lead, a first output impedance matching circuit between the second port and the output lead, and a first additional circuit coupled between the output lead and a ground terminal. At least one component of the first additional circuit is formed at least in part by way of one or more of a plurality of castellations and a plurality of vias.

Abstract: A timer distribution module supports multiple timers and comprises: a command decoder arranged to determine expiration times of a plurality of timers; and a timer link list distribution adapter, LLDA, operably coupled to the command decoder. The LLDA is arranged to: receive a time reference from a master clock; receive timer data from the command decoder wherein the timer data comprises at least one timer expiration link list; construct a plurality of timer link lists based on at least one of: the timer expiration link list, at least one configurable timing barrier; dynamically split the link list timer data into a plurality of granularities based on the timer expiration link list; and output the dynamically split link list timer data.

Abstract: An isolation circuit arranged to provide electrical isolation between at least one control module and at least one driver module. The isolation circuit comprises at least one boost circuit arranged to receive at least one control signal from the at least one control module, and boost the at least one control signal from a first voltage level signal to an increased voltage level signal. The isolation circuit further comprising at least a first capacitive isolation component comprising a first electrically conductive element and at least one further electrically conductive element formed from at least a part of printed circuit board layer, the first and at least one further electrically conductive elements being electrically isolated with respect to one another and arranged to comprise capacitive characteristics there between.