Abstract: Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a source region of the first conductivity type, and the diode circuit is connected between the isolation structure and the source region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

Abstract: A method includes providing an integrated circuit (IC) die assembly that includes a substrate and an IC die mounted on a portion of a major surface of the substrate, dispensing an interface material on the IC die, positioning a portion of a heat spreader in contact with the interface material, and dispensing an adhesive between one side of the heat spreader facing the IC die assembly and exposed portions of a major surface of an encapsulant on the substrate.

Abstract: The method and system supports multiple bandwidth traffic over a single CPRI (common public radio interface) link (109) using a single bandwidth DMA (direct memory access) engine (505) and fast Fourier transform/inverse fast Fourier transform processing. (402, 404) The invention exploits fast Fourier transform/inverse fast Fourier transform properties and is particularly suitable for supporting LTE (Long Term Evolution) cellular communication systems (100) The CPRI Media Access Control is configured in each CPRI lane to run at the maximum bandwidth among the bandwidths required. In the uplink, lower bandwidth data samples are padded with zeros and flexible positioning may be used to arrange the data in a CPRI frame. In the downlink, the radio equipment receiver (106) only processes the relevant data and ignores any interpolated samples. The invention is compatible with CPRI and LTE standards.

Abstract: The present disclosure provides methods and circuits for compensating reference shifting error. A compensation reference voltage is applied to an error compensation circuit, which is coupled to a multiplying circuit. A compensation parasitic capacitance is induced in the error compensation circuit. The compensation parasitic capacitance is configured to negate a parasitic capacitance induced in the multiplying circuit.

Abstract: A programmable gain amplifier (PGA) includes an op amp, an input circuit, a feedback circuit, and a calibration circuit. The input circuit is connected between a PGA input node and an op-amp input node and selectively applies the analog input signal to the op-amp input node. The feedback circuit is connected between an op-amp output node and the op-amp input node and applies the amplified analog output signal as a feedback signal to the op-amp input node. The calibration circuit is connected between a calibration reference node and the op-amp input node and selectively connects the calibration reference node directly to the op-amp input node without traversing any of the input circuit. The PGA may be implemented as a single-ended or differential amplifier. The PGA avoids reduced linearity resulting from series combinations of switches in the input circuit when configured for its normal operating mode.

Abstract: A method of forming a semiconductor device in an NVM region and in a logic region uses a semiconductor substrate and includes forming a first layer of a material that can be used as a gate or a dummy gate. An opening is formed in the first layer in the NVM region. The opening is filled with a charge storage layer and a control gate. A select gate, which may be formed from the first layer or from a metal layer, is formed adjacent to the control gate. If it is a metal from a metal layer, the first layer is used to form a dummy gate. A metal logic gate is formed in the logic region by replacing a dummy gate.

Abstract: A sequential logic circuit comprising a first latch component comprising a data input arranged to receive an input signal, a data output arranged to output a current logical state of the first latch component and a clock input arranged to receive a clock signal; the first latch component being arranged to comprise a transparent state upon the clock signal received thereby comprising a first logical state, and to comprise a latched state upon the clock signal received thereby comprising a second logical state, and a second latch component comprising a data input arranged to receive an input signal, a data output operably coupled to an output of the sequential logic circuit and arranged to output a current state of the second latch component and a clock input arranged to receive a clock signal; the second latch component being arranged to comprise a transparent state upon the clock signal received thereby comprising a second logical state, and to comprise a latched state upon the clock signal received thereby c

Abstract: A semiconductor device comprises an integrated circuit including a wire bond pad and a passivation material, and a first gap between a first selected portion of the wire bond pad and the passivation material. The first gap is positioned to contain at least a first portion of a splash of the wire bond pad formed during a wire bond process.

Abstract: A process and device structure is provided for increasing capacitance density of a capacitor structure. A sandwich capacitor is provided in which a bottom silicon-containing conductor plate is formed with holes or cavities, upon which an oxide layer and a top silicon-containing layer conductor is formed. The holes or cavities provide additional capacitive area, thereby increasing capacitance per footprint area of the capacitor structure. The holes can form, for example, a line structure or a waffle-like structure in the bottom conductor plate. Etching techniques used to form the holes in the bottom conductor plate can also result in side wall tapering of the holes, thereby increasing the surface area of the silicon-containing layer defined by the holes. In addition, depth of holes can be adjusted through timed etching to further adjust capacitive area.

Abstract: A band-gap voltage reference circuit having first and second branches respectively including first and second groups of transistors of different emitter current conduction areas and current sources for running the first and second groups of transistors at different emitter current densities to generate respective base-emitter voltages, and output terminals connected to receive a regulated voltage (Vout) which is a function of the base-emitter voltages of the first and second groups of transistors. Each of the first and second groups includes at least one npn-type transistor and at least one pnp transistor connected with their emitter-collector paths in series in the respective one of the branches so as to present cumulated base-emitter voltages across the respective group.

Abstract: A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can be coated, including those that are difficult to coat using standard self-assembled monolayer (SAM) processes (e.g., locations beneath the proof mass). Controlled processing parameters, such as temperature, length of time for annealing, and the like, provide for a near-uniform silicon carbide coating not provided by previous processes.

Abstract: An oxide-containing layer is formed directly on a semiconductor layer in an NVM region, and a first partial layer of a first material is formed over the oxide-containing layer in the NVM region. A first high-k dielectric layer is formed directly on the semiconductor layer in a logic region. A first conductive layer is formed over the first dielectric layer in the logic region. A second partial layer of the first material is formed directly on the first partial layer in the NVM region and over the first conductive layer in the logic region. A logic device is formed in the logic region. An NVM cell is formed in the NVM region, wherein the first and second partial layer together are used to form one of a charge storage layer if the cell is a floating gate cell or a select gate if the cell is a split gate cell.

Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells having spacer control gates (108) along with a high-k-metal-poly select gate (121, 123, 127) and one or more additional in-laid high-k metal CMOS transistor gates (121, 124, 128) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.

Abstract: Semiconductor devices with multilayer flex interconnect structures. In some embodiments, a semiconductor device may include a semiconductor chip coupled to a planar substrate and a multilayer flex interconnect structure coupled to the semiconductor chip, the multilayer flex interconnect structure including at least: a first conductive layer, a second conductive layer, and a dielectric layer disposed between the first and second conductive layers. The semiconductor device may also include another semiconductor chip coupled to the planar substrate and placed in a side-by-side configuration with respect to the semiconductor chip, where the multilayer flex interconnect structure provides electrical connections between at least two terminals of the semiconductor chip and at least two terminals of the other semiconductor chip.

Abstract: The embodiments described herein provide an apparatus and method for separating dies from adhesive tape. In general, these techniques use applied vacuum and one or more channels in an extractor base surface to progressively peel adhesive tape away from the die. When the adhesive tape has been peeled away from the entire die the die can be removed and packaged. Such a technique can reduce the strain the die and thus may reduce the probability of cracks occurring in the die, and is thus particularly applicable to removing adhesive tape from relatively thin dies.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.

Abstract: Embodiments include a split-gate non-volatile memory cell that is formed having a control gate and a select gate, where at least a portion of the control gate is formed over the select gate. A charge storage layer is formed between the select gate and the control gate. The select gate is formed using a first conductive layer and a second conductive layer. The second conductive layer is formed over the first conductive layer and has a lower resistivity than the first conductive layer. In one embodiment, the first conductive layer is polysilicon and the second conductive layer is titanium nitride (TiN). In another embodiment, the second conductive layer may be a silicide or other conductive material, or combination of conductive materials having a lower resistivity than the first conductive layer.

Abstract: A gain control system for a gain stage of a wireless communication system includes a gain control module and a mode selection module. The gain control module is operable in automatic gain control (AGC) and manual gain control (MGC) modes. The mode selection module checks the presence of first user-data in the first sub-frame based on a received signal strength indication (RSSI) value and/or a decibel amplitude level relative to full scale (dBFS) value, the presence of second user-data in a second sub-frame subsequent to the first sub-frame based on an advance information, calculates an estimated signal power level, and configures the gain control module in one of the AGC and MGC modes. Based on the mode, the gain control module provides a gain value to the gain stage.

Abstract: A semiconductor memory device includes a non-volatile memory, a memory controller, and a charge pump system. The memory controller establishes first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed. The charge pump system includes a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle. The first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle.

Abstract: A digital decoder, used in a reconfigurable circuit, for decoding digital pulses includes a phase indicator module having inputs coupled to a reference pulse input and a data pulse input. The phase indicator module has timing information outputs that provide logic values indicative of rising and falling edges of pulses occurring on the reference pulse input and the data pulse input. A phase decoder module has inputs coupled to the timing information outputs, and outputs decoded binary data values. In operation, the phase decoder module compares at least two of the logic values at the timing information outputs with a signal representative leading and trailing edges of a pulse applied to one of the phase inputs to determine a pulse arrival order sequence on the phase inputs and thereby provide the decoded binary data values.