Abstract: A design supporting method includes partitioning a partition path of circuit information into partitioned paths based on a given condition, calculating a variation value of each of the partitioned paths based on variation values on a delay of a cell included in the corresponding partitioned path, calculating a partition propagation delay time of each of the partitioned paths based on the variation value of the corresponding partitioned path, and calculating a source propagation delay time of the source path by merging the propagation delay time of each of the partitioned paths.

Abstract: An analog switch circuit that includes a first field-effect transistor, a source of which is coupled to a first switch terminal, and a drain of which is coupled to a second switch terminal; a first capacitance storing electric charge; a second capacitance storing electric charge; a first switch circuit that couples the first capacitance between a direct current voltage node and a reference potential node; a second switch circuit that couples the first capacitance and the second capacitance in parallel; and a third switch circuit that couples the second capacitance between a gate and the source of the first field-effect transistor.

Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.

Abstract: A computer-readable recording medium stores therein an IP model that combines source code of IPs that include an interface representing input/output of data; a register storing the data; a behavior executing processing based on the data; and a state performing wait processing according to time information from the interface and a connection code indicative of a connecting relation between the IPs.

Abstract: A semiconductor integrated circuit includes a plurality of clock gating circuits, a plurality of flip-flops to which transmission of a clock signal is controlled by a respective clock gating circuit, and a clock gating control circuit that controls an active state and an inactive state of the plurality of clock gating circuits, wherein during a test operation mode, the clock gating control circuit controlling the active state and the inactive state of the plurality of clock gating circuits according to a user logic signal, and controlling setting of an arbitrary combination of clock gating circuits to an inactive state regardless of the user logic signal.

Abstract: A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.

Abstract: A cache device interposed between a processor and a memory device, including: a cache memory storing data from the memory device; a buffer holding output data output from the processor; a control circuit determining, on the basis of a request to access the memory device, whether a cache hit has occurred or not and, if a cache miss has occurred, storing the output data in the buffer in response to the access request, outputting a read request for reading the data in a line containing data requested by the access request from the memory device, storing data output from the line of the memory device into the cache memory, and storing the output data from the buffer into the cache memory.

Abstract: A signal processor includes a period detection section which detects that a period is currently used for communication of a frame; a pattern detection section which detects, from the received signal, a first signal pattern by which the end of communication of the frame is recognized; and an output processing section which outputs the received signal to a controller, configured to instruct, upon detection of the first signal pattern in the period being currently used for communication of a frame, the controller to halt startup of communication action of the next frame, until the period being currently used for communication of a frame comes to the end, to thereby reduce an event such that frames are transmitted from a plurality of communication devices simultaneously, and to thereby allow the communication action for the next frame to proceed correctly.

Abstract: A phase locked loop circuit includes an oscillator part configured to generate a reference signal by amplifying a signal generated by an oscillator, and a phase locked loop part configured to include a filter that outputs a control signal to a clock transmitting circuit that generates a clock signal in accordance with a phase difference between the reference signal and a feedback signal, wherein a drive capability of the oscillator part is controlled in accordance with the control signal.

Abstract: A inspection image data of the chip A is captured and the data representing the amount of correction of flare corresponded to the chip A is appropriately loaded from the map storage block. Next, a inspection image of the chip A? is captured, and the data representing the amount of correction of flare corresponded to the chip A? is loaded from the flare map storage block as the amount of shifting of the edge of the contour of the pattern. The amount of correction is converted, by a correction data generation block which is a correction data generator, into the amount of geometrical correction of pattern which provides correction data. In the comparison block, the images of the geometry of two chips are compared and corrected on the amount of correction of flare generated by a correction data generation block, to thereby judge whether defect is found or not.

Abstract: A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.

Abstract: A semiconductor device including a semiconductor device, an integrated circuit chip, a sealing resin encapsulating the integrated circuit chip and an insulating waterproof film covering at least a portion of a surface of said sealing resin and preventing penetration of moisture into the sealing resin.

Abstract: An output circuit including a fine-adjustment VGA and a rough-adjustment VGA, where the maximum gain of the fine-adjustment VGA, as attained when the minimum gain of the rough-adjustment VGA is attained, is lower than the maximum gain of the fine-adjustment VGA as attained when the maximum gain of the rough-adjustment VGA is attained, so that the power consumption of the rough-adjustment VGA is reduced

Abstract: An amplifier including a first transistor including a gate coupled to an input terminal and a grounded source; a load resistor provided between a drain of the first transistor and a power supply; an output terminal coupled to a node between the drain of the first transistor and the load resistor; a feedback path coupled to the input terminal and the output terminal and including a resistor and a capacitor; a bias voltage generator applying a gate bias voltage to the gate of the first transistor in response to an enable signal; a supply resistor provided between an output node for the gate bias voltage of the bias voltage generator and the gate of the first transistor; and an enable switch lowering a resistance value between the output node for the gate bias voltage and a node in the feedback path.

Abstract: A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.

Abstract: A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active regions in the p-MOS region; a p-MOS gate electrode structure formed above the semiconductor substrate, traversing the p-MOS active region and defining a p-MOS channel region under the p-MOS gate electrode structure; a compressive stress film selectively formed above the p-MOS active region and covering the p-MOS gate electrode structure; and a stress released region selectively formed above the element isolation region in the p-MOS region and releasing stress in the compressive stress film, wherein a compressive stress along the gate length direction and a tensile stress along the gate width direction are exerted on the p-MOS channel region. The performance of the semiconductor device can be improved by controlling the stress separately for the active region and element isolation region.

Abstract: A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.

Abstract: According to one embodiment, a power combiner configured to receive at least two input signals and combine the input signals to generate an output signal. The power combiner may include at least two input layers and an output layer located between the input layers. Each layer may be in the shape of a slotted loop.

Abstract: A semiconductor device includes: a driver that receives a power supply voltage and drives an external load with a driving capability; a measurement unit that measures a level of the power supply voltage; a code table that stores the level of the power supply voltage and code information for determining the driving capability of the driver; and a controller that reads the code information in accordance with the level of a measured power supply voltage in reference to the code table and controls the driving capability of the driver in accordance with the code information.

Abstract: An insulating film is formed over a semiconductor substrate. A wiring trench formed in the insulating film reaches partway in a thickness direction of the insulating film. A via hole is disposed at an end of the wiring trench. A barrier metal film covers inner surfaces of the wiring trench and via hole. A bottom of the wiring trench and a sidewall of the via hole are connected via an inclined plane. A length of a portion of the inclined plane having an inclination angle range of 40° to 50° relative to a surface of the semiconductor substrate is equal to or shorter than a maximum size of a plan shape of the via hole, in a cross section which is parallel to a longitudinal direction of the wiring trench, passes a center of the via hole and perpendicular to the surface of the semiconductor surface.