Abstract: An article is provided for immobilizing functional organic biomolecules (e.g. proteins, DNA, and the like) through a covalent bond to a thiolate or disulfide monolayer to a metal surface wherein an extra activation step of the surface layer or an activation step of the functional biomolecules or bioreceptors could be avoided. The article comprises mixed self-assembled monolayers of thiol or disulfide molecules of formula X1—(CH2)c—O—([CH2]t—CH2—O)n—R1—S—X2 incorporating poly(ethylene oxide) groups and two functional groups, X1 and X2. Preferably, one functional group resists nonspecific adsorption and the other functional group directly (without activation) reacts with functional groups on the biomolecules. The functional group X1 is selected from the group consisting of flurophenyl, fluorobenzoyl, fluorophenoxycarbonyl, nitrophenoxycarbonyl, C2-12 alkenyl, sulfonyl halide, isothiocyanato, isocyanato, carbonyl halide, haloalkylcarbonyl, and diazonium carbonyl.

Abstract: The present invention is related to an analogue-to-digital (A/D) converter comprising at least two voltage comparator devices. Each of the voltage comparator devices is arranged for being fed with a same input signal and for generating an own internal voltage reference. The two internal voltage references are different. Each voltage comparator is arranged for generating an output signal indicative of a bit position of a digital approximation of said input signal.

Abstract: A method for performing, for a plurality of applications, data communication on a wireless medium accessible for a plurality of nodes used by the applications is disclosed. Each application is assigned to one of a plurality of application classes. In one aspect, the method includes sending, at one of the plurality of nodes, a resource request for an application via a control channel dedicated to the application class which the application is assigned to, wherein the resource request is sent employing an access method available for the application class. The method also includes taking a decision on allocating resource on the wireless medium for the application. The method also includes performing data communication for the application via a conflict-free data channel, the data channel being separated in time from the dedicated control channel.

Abstract: A two-terminal organic light-emitting device structure is presented with low absorption losses and high current densities. Light generation and emission occur at a predetermined distance from any metallic contact, thereby reducing optical absorption losses. High current densities and thus high emitted light intensity are achieved by combining two types of conduction in one device: by combining space charge limited conduction and field-effect conduction or by combining ohmic conduction and field-effect conduction, thereby optimizing the current densities. This results in a very high local concentration of excitons and therefore a high light intensity, which can be important for applications such as organic lasers, and more in particular electrically pumped organic lasers.

Abstract: A method for managing the operation of an electronic system by taking into account various cost constraints of the system is disclosed. In one aspect, the method includes selecting a working mode for a plurality of tasks in a pro-active way using predictive control mechanism while guaranteeing hard real time constraints. The system is operated at the selected working mode for the corresponding tasks.

Abstract: An electromagnetic energy scavenger (10) for converting kinetic energy into electrical energy comprises at least one permanent magnet (12) and one or more coils (11) lying in a coil plane, the one or more coils being electrically interconnected for delivery of electrical energy. Upon mechanical movement of the energy scavenger (10), the at least one permanent magnet (12) is freely movable relative to the coils (11) in a plane parallel to the coil plane, thus generating an electrical field in at least one coil (11).

Abstract: A method for trimming an effective refractive index of optical waveguiding structures made for example in a high refractive index contrast material system. By compaction of cladding material in a compaction area next to patterns or ridges that are formed in the core material for realizing an optical waveguiding structure, the effective index of refraction of the optical waveguiding structure can be trimmed. Thus, the operating wavelength of an optical component comprising such an optical waveguiding structure can be trimmed. An optical waveguide structure thus obtained is also disclosed.

Abstract: A programmable device suitable for software defined radio terminal is disclosed. In one aspect, the device includes a scalar cluster providing a scalar data path and a scalar register file and arranged for executing scalar instructions. The device may further include at least two interconnected vector clusters connected with the scalar cluster. Each of the at least two vector clusters provides a vector data path and a vector register file and is arranged for executing at least one vector instruction different from vector instructions performed by any other vector cluster of the at least two vector clusters.

Abstract: A method for improving the mechanical hardness of polymer particles is provided, the method comprising subjecting the polymer particles to a thermal cycle of heating and subsequently cooling. The method is applicable for use with combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.

Abstract: A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

Abstract: A method of manufacturing a semiconductor device is provided, involving forming a first flexible film on a rigid carrier substrate, attaching a die to the flexible film, so as to leave contacts on the die exposed, forming a wiring layer to contact the contacts of the die, and releasing the flexible film where the die is attached, from the carrier. An area of the first flexible film where the die is attached can have a lower adhesion to the rigid carrier substrate than other areas, so that releasing can involve cutting the first flexible film to release a part of the area of lower adhesion, and leaving an area of higher adhesion. A combined thickness of the die, the first flexible film and the wiring layer can be less than 150 ?m, so that the device is bendable. Devices can be stacked.

Abstract: One inventive aspect relates to a phase shift mask suitable for lithographic processing of a device, to a method of making such a mask and to lithographic processing using such a mask. The phase shift mask is made taking into account the threshold or dose that will be used for lithographic processing using the mask. In this way, image imbalance will be reduced in a significant focus-exposure processing window. In one embodiment, evaluation of the image imbalance is performed taking into account the processing windows for the different edges of the features of the pattern.

Abstract: The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: A method for manufacturing a III-V CMOS device is disclosed. The device includes a first and second main contact and a control contact. In one aspect, the method includes providing the control contact by using damascene processing. The method thus allows obtaining a control contact with a length of between about 20 nm and 5 ?m and with good Schottky behavior. Using low-resistive materials such as Cu allows reducing the gate resistance thus improving the high-frequency performance of the III-V CMOS device.

Abstract: An analyte sensing device is disclosed. In one aspect, the device includes at least one sensing module on a substrate. The sensing module has at least one nanowire including a bottom, an intermediate part and a top, the bottom being closer to the substrate than the top. The module has a surrounding electrode surrounding the bottom and at least part of the intermediate part of each nanowire in height direction and being electrically isolated from the nanowire. There is a gap between each nanowire and the corresponding surrounding electrode allowing penetration of an analyte to be detected between the nanowire and the surrounding electrode. A measurement circuitry is electrically connected to each nanowire and the surrounding electrode for detecting a change in an electrical property as a result of the penetration of the analyte into the gap.

Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different.

Abstract: The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a H2 flux or hydrogen originating from dissociation of GeH4 and/or to a non-reactive gas source such as N2, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallising the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer.

Abstract: Disclosed herein are memory devices comprising a plurality of memory cells to which a standby voltage is to be supplied during standby mode to avoid loss of data, and methods of operating said memory devices, the methods comprising: (a) determining an actual value of a bit integrity parameter of the memory cells; (b) comparing said actual value with a predetermined minimal value of the bit integrity parameter which takes into account possible variations in cell properties as a result of process variations; and (c) adjusting the standby voltage towards a more optimal value based on the result of the comparison in such a way that said bit integrity parameter determined for said more optimal value of the standby voltage approaches the predetermined minimal value. The circuitry for measuring the bit integrity parameter preferably comprises a plurality of replica test cells which are added to the memory matrix.

Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.