Abstract: The present invention provides a cross-connect switching device and a method of cross-connect switching of Nf * N1 channels to one of a plurality of output lines of the switching device, Nf * N1 being equal or greater than four. The device and method includes three basic elements: 1) a partial demultiplexer for partially demultiplexing the channels on its input lines into groups of channels and individual channels; 2) a space switch for switching groups of channels en bloc; and 3) a combiner unit for combining individual channels onto one of the output lines of the cross-connect switching device. The cross-connect switching device according to the present invention may be combined with similar or dissimilar switching devices to form a larger switching device.

Abstract: A method for estimating the BER for telecommunication systems, particular those characterized by signals having high crest factors or causing large inband nonlinear distortions. The set of signals used by the system is divided into subsets according to a characteristic such as signal crest factor, and a BER estimation method is chosen for each subset. Signals causing a large BER are simulated more efficiently using a Monte Carlo simulation, while low BER estimations more efficiently use a quasi-analytical method. The method results in improved accuracy because the noise contribution in quasi-analytical methods can be better approximated for signals having a small crest factor range, and drastically reduces the number of experiments, measurements or simulations which are needed to obtain an accurate BER estimation, as compared to standard Monte Carlo techniques.

Abstract: Methods and apparatus wherein subsequent permutation and inverse permutation operations provide inputs in correct order for first and second processes. Processes needing inputs in original order and processes needing inputs in permutated order can be distinguished, thereby using one of the processes as reference process. Permutation and inverse permutation operations which can fit into a turbo coding system and in systems applying the turbo coding principle. At least one permutation and one inverse permutation operation can be performed subsequently. Permutation and inverse permutation operations may be altered by scheduling linear writing and reading operation and permutated or inverse permutated writing and reading operations. These methods enable parallel execution of sub-processes, where the processes producing and consuming data can be performed in a parallel way, and the writing and reading operations to and from a memory can be performed in a parallel way.

Abstract: An optical waveguide to fiber coupler comprises a substrate, a first waveguide and a second waveguide. The first and second waveguides are formed on the substrate and intersect at a right angle. A diffraction grating structure is formed at the intersection of the first and second waveguides, such that, when the coupler is physically abutted with a single mode optical fiber, in operation, a polarization split is obtained that couples orthogonal modes from the single-mode optical fiber into single identical modes in the first and second waveguides. Also, employing the coupler in optical polarization diverse applications provides for implementing a polarization insensitive photonic integrated circuit using such diffraction grating structures, such as, for example, photonic crystals.

Abstract: Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.

Abstract: The present invention is directed to a charge pump circuit. A multi-stage charge pump circuit with a particular structure for at least one of said stages is presented. The stage has two switches of which the second switch has a pair of conduction terminals connected between the first control terminal of the first switch and a next stage. The second switch, for instance a transistor, has a second control terminal, the second control terminal being connected to said previous stage. The present charge pump circuit is especially suited for use in an integrated memory device. No special last or output stage is required. Further, the circuit is suited for exploiting the floating well type technology, which is an advantage as the bulk effect is reduced by using such technology. In accordance with a second embodiment of the present invention, the choice of the steering signals (control and node clocks), possibly due to the selecting of the particular stage structure, is discussed.

Abstract: A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Abstract: A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F−) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.

Abstract: A planar high-density EEPROM split gate memory structure, is formed using two poly-layers and chemical-mechanical-polishing processes. Stripes of contiguous poly lines, alternately formed in one of the two poly-layers, constitute the memory structure. Source and drain regions are formed self-aligned to the outer borders of this memory structure. Depending on the biasing scheme a poly line is used as the select gate of the memory cell while an adjacent poly line is used as program gate, so to have charge stored underneath this adjacent poly line using source-side-injection of charge carriers. The other poly lines are biased to form conductive channels between the select and program gate to the source and drain regions. These conductive channels form soft source and drain regions next to the select and program gate in use.

Abstract: A system and method for multi-level iterative filtering of a data structure, e.g., an image, wherein elements of the data structure form the zero layer in the zero level and the data layer in each subsequent level is given by the results of one iteration. First, the method of the present system includes subdividing each level into a plurality of regions, there being data dependency between the data in one data layer in one level and the data layers in any other level of a region. Second, the method includes filtering each level by lapped-region processing. Lastly., the method includes scheduling the data processing of each level to provide substantially regional synchronization of the filtering at each level. In one embodiment, the sequence for traversing the regions is selected so that outputs from processing the regions are scheduled to occur at substantially equal time intervals.

Abstract: The present invention is related to a metallization structure on a fluorine-containing dielectric. This metallization structure includes a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt, and Pd. The barrier layer includes at least a first part, being positioned between the fluorine-containing dielectric and the conductive pattern, the first part containing at least a first and a second sub-layer, the first sub-layer contacting the fluorine-containing dielectric being impermeable for fluorine.

Abstract: The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

Abstract: An apparatus that is configured to sense the presence of gases, vapors and liquids using acoustic waves. The apparatus comprises a first part that is configured to generate acoustic waves. The apparatus further comprises a second part having a sensing and acoustic wave guiding device, which is configured to sense the presence of such substances and propagate acoustic waves. The first part is removably fixable to the second part of the apparatus. When the first part is fixed to the second part, the acoustic waves propagate in the second part.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: Gastrointestinal probe (2) comprising a sensitive material (4) which is able to be connected to electrical or optical readout means or measurement means (10) characterized in that said sensitive material (4) undergoes an irreversible change when it is submitted to the cumulative action of the external medium, in such a manner that the irreversible change can be measured and/or recorded by said electrical or optical readout means or measurement means (10). The present invention concerns also the production process of the gastrointestinal probe according to the invention and its use.

Abstract: A replacement gate process is disclosed comprising the steps of forming a dummy gate stack on a substrate, depositing a PMD layer on the substrate and polishing this PMD layer to expose the top surface of the dummy gate stack. The dummy gate stack can be removed selective to the spacers and the PMD layer. SiC is used as spacer or CMP stop layer to improve the uniformity of the PMD CMP step. SiC can also be used as etch stop layer during the etching of the contact holes or during the formation of a T-gate.

Abstract: Methods and devices for encoding and decoding video data are provided, wherein an image data structure can be represented as a group of macroblocks and each macroblock contains a plurality of blocks. One aspect of the invention includes a method of decoding image data comprises decoding a current block of data, comprising retrieving a related reference block, decoding texture information of the current block, and reconstructing the current block, prior to the decoding of another block of data.

Abstract: The present invention is a design apparatus compiled on a computer environment for generating from a behavioral description of a system comprising at least one digital system part, an implementable description for said system, said behavioral description being represented on said computer environment as a first set of objects with a first set of relations therebetween, said implementable description being represented on said computer environment as a second set of objects with a second set of relations therebetween, said first and second set of objects being part of a design environment.

Abstract: An apparatus for wet cleaning or etching of flat substrates comprising a tank with an inlet opening and outlet opening for said substrates. Said tank contains a cleaning liquid and is installed in a gaseous environment. At least one of the openings is a slice in a sidewall of the tank and is present below the liquid-surface. In the tank there may be a portion above the liquid filled with a gas with a pressure being lower than the pressure within said environment. The method comprises the step of transferring a substrate through the cleaning or etching liquid at a level underneath the surface of said liquid making use of said apparatus.

Abstract: A system and method for guiding a beam of electromagnetic radiation is disclosed. The system includes at least a first stack of dielectric layers, the first stack comprising at least a first substack, a second substack and a third substack, the third substack separating said first and second substack, the first substack comprising at least one dielectric layer, the second substack comprises at least one dielectric layer, the third substack comprises at least one dielectric layer. The dielectric layers of the first substack and the second substack equidistant from the third substack have the same refractive index.