Abstract: An apparatus for wet cleaning or etching of flat substrates comprising a tank with an inlet opening and outlet opening for said substrates. Said tank contains a cleaning liquid and is installed in a gaseous environment. At least one of the openings is a slice in a sidewall of the tank and is present below the liquid-surface. In the tank there may be a portion above the liquid filled with a gas with a pressure being lower than the pressure within said environment. The method comprises the step of transferring a substrate through the cleaning or etching liquid at a level underneath the surface of said liquid making use of said apparatus.

Abstract: An apparatus and method for testing supply connections of an electronic device by using a current mirror configuration through using a particular connection of the branches of the current mirror to the supply line is provided. Such connection results in unbalanced operation of the current mirror but depending whether the supply connection under test is proper or not, the unbalance is essentially different, resulting in a high sensitivity of the test device.

Abstract: A method of determining the motion vector of a block of a video frame with respect to a reference video frame. The video frame and reference video frame comprising pixels, wherein each pixel has a pixel value. The method comprises first determining a plurality of sets of error norms, wherein each error norm within one of the sets is related to a different position of the block in the reference video frame, wherein the error norms are calculated by a norm of an error which is given by functions of the pixel values of the block of the video frame and the reference video frame, and wherein each set of the plurality of sets is related to a different function. Second, the motion vector is selected with the smallest error norm.

Abstract: A device for detecting an analyte in a sample comprising an active layer comprising at least a dielectric material, a source electrode, a drain electrode and a semiconducting substrate which acts as current pathway between source and drain. The conductivity of said semiconducting layer can be influenced by the interaction of the active layer with the sample containing the analyte to detect. The device is fabricated such that properties like low price, disposability, reduced drift of the device and suitability for biomedical and pharmaceutical applications are obtained. To fulfill these requirements, the device described in this application will be based on organic-containing materials.

Abstract: The present invention provides a method of transfer of a first planar substrate with two major surfaces to a second substrate, comprising the steps of: forming the first planar substrate, attaching one of the major surfaces of the first planar substrate to a carrier by means of a release layer; attaching the other major surface of the first substrate to the second substrate with a curable polymer adhesive layer; partly curing the polymer adhesive layer, disconnecting the release layer from the first substrate to separate the first substrate from the camer, followed by coing the polymer adhesive layer.

Abstract: A probe tip configuration, being part of a probe (FIG. 2) for use in a scanning proximity microscope, is disclosed, comprising a cantilever beam (1) and a probe tip. Said tip comprises a first portion of a tip (2) and at least one second portion of a tip (5). Said first portion of a tip is connected to said cantilever beam whereas said second portion of a tip is placed on said first portion of a tip. Cantilever beam, first portion of a tip and second portion(s) of a tip can be composed of different materials and can be isolated each from another which makes an easy adjustment of the maximum penetration depth of the tip possible without limiting the resolution and makes it also possible to detect more than one signal of a sample at the same time using one cantilever beam. Methods of making the probe tip configuration are further described.

Abstract: A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and/or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°.

Abstract: A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance can be supplied thereby creating at least locally a sharply defined liquid-vapor boundary. The gaseous substance and the liquid can be selected such that the gaseous substance is miscible with the liquid and when mixed with the liquid yields a mixture having a surface tension lower than that of the liquid. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-vapor boundary over said substrate thereby removing said liquid from said substrate.

Abstract: The present invention is related to a non-volatile memory cell, comprising a semiconductor substrate including a source region and a drain region with a channel region there between; a floating gate of a conductive material at least partially extending over a first portion of said channel region; a control gate of a conductive material and at least partially extending over a second portion of the channel region; an additional program gate of a conductive material and at least partially overlapping said floating gate and being capacitively coupled through a dielectric layer to said floating gate.

Abstract: A semiconductor processing system for the production of semiconductor electronic devices is described, which includes a sequence of semiconductor processing steps carried out on a plurality of semiconductor processing machines, whereby the processing is carried out on discrete pieces of substrate which are smaller than conventional semiconductor wafers but may be made therefrom, or from larger diameter semiconducting wafers or from materials onto which semiconductor layers may be formed, and the discrete substrate pieces are selectably processable into the electronic devices either individually or as a plurality removably fixed to a support.

Abstract: A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Abstract: A method, i.e. the so-called Cube-Assembling Method (CAM), is disclosed for locally refining a n-dimensional mesh in a predetermined domain, wherein the mesh comprises nodes and n−1 planes connecting these nodes thereby dividing said domain in n-dimensional first elements. By applying a mesh on a domain, the domain can be introduced in a computer aided design environment for optimization purposes. Concerning the mesh, one of the issues is to perform the optimization using the appropriate amount of nodes at the appropriate location The method of the present invention succeeds in adding or removing nodes locally. The assembling is done over the elements, being e.g. squares or cubes or hypercubes dependent of the dimension of the mesh. Like the finite-box method, the CAM method is easy to program, even in higher dimensions. However, the CAM method does not suffer from the restriction that only one line may terminate at the side of a box.

Abstract: A system and method for determining optimized scheduling intervals and optimized access conflicts and for determining an optimized memory organization of an essentially digital device. The system includes an optimizer for determining an optimized scheduling of the data access instructions for a plurality of disjunct code blocks, wherein each of the code blocks include part of the data access instructions. The system performs an iterative process of successively reducing the cycle budget for selected blocks and modifying the scheduling of the selected blocks until a cumulative cycle budget for all of the blocks is met.

Abstract: A method and apparatus to characterize a modulator without requiring access to modulator local oscillators. A periodic signal is input so that at least two tones are output, and the envelope of the filtered output is detected. The modulated output signal is generally differentially filtered before envelope detection, and the measured amplitude and phase of the envelope of the differentially filtered modulator output frequencies, combined with the known filter characteristics, are used to deduce the amplitude and phase of the modulated output. The modulator input signal frequencies may advantageously be controlled to substantially limit the output to frequencies which differ from a reference frequency by odd multiples of a delta frequency, reducing intermodulation components. In this special case the modulator output may be deduced from a squared envelope signal without a need for differential filtering. The deduced output, compared to the known input, characterizes the modulator at the input frequencies.

Abstract: It is an object of the present invention to disclose a fully differential OTA. The active loads in the two output branches of the OTA show high conductance at low frequency and low conductance at higher frequency. In this way an OTA is constructed with inherent pass-band. Low frequencies are amplified little or even filtered out. The amplification of input referred offset voltage due to mismatches in transistor pairs is similarly reduced. Complementary, in another embodiment of the invention the OTA is of the low-pass type, i.e. also amplifying DC signals. Both OTA's are very compact and the common mode output voltage regulation is in both cases part of the active load structure.

Abstract: A formalized method and a design system are described for part of the design decisions, related to memory, involved while designing an essentially digital device. The method and system determine an optimized memory organization starting from a representation of said digital device, the representation describing the functionality of the digital device and comprising data access instructions on basic groups, which are groups of scalar signals. The method and system determine optimized scheduling intervals of said data access instructions such that execution of said functionality with the digital device is guaranteed to be within a predetermined cycle budget, the determining of the optimized scheduling intervals comprising optimizing access conflicts with respect to an evaluation criterion related to the memory cost of said digital device. An optimized memory organization is selected in accordance with the optimized scheduling intervals and the optimized access conflicts.

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.

Abstract: A method of growing a silicon oxide layer on a silicon substrate by means of a thermal oxidation in a furnace in the presence of a gaseous mixture, said mixture comprising oxygen and Cl2, said Cl2 being generated by an organic chlorine-carbon source, particularly oxalyl chloride. This method is directed to the growth of (ultra) thin silicon oxides and/or the cleaning of a substrate using a low oxidation power. Consequently the method disclosed is especially suited for temperature below 700° C. and for oxidation ambients containing only small amounts of oxygen.