Abstract: A method of forming conductive paths and vias is disclosed. In one aspect, patterns of a hard mask layer are transferred into a dielectric layer by etching to form trenches. The trenches define locations for conductive paths of an upper metallization level. At least one trench is interrupted in a longitudinal direction by a block portion of the hard mask layer, the block portion defining the tip-to-tip location of a pair of the conductive paths to be formed. The trenches extend partially through the dielectric layer in regions exposed by the hard mask layer, thereby deepening first and the second holes to extend completely through the dielectric layer. After removing the hard mask layer, the deepened first and second holes and the trenches are filled with a conductive material to form the conductive paths in the trenches and to form the vias in the deepened first and second holes.

Abstract: The disclosed technology relates to a metal-insulator-metal capacitor (MIMCAP) integrated as part of a back-end-of-line of an integrated circuit (IC). In one aspect, a MIMCAP comprises a first planar electrode having perforations formed therethrough, and a metal-insulator-metal (MIM) stack lining inner surfaces of cavities formed in the perforations and extending into the substrate. The MIMCAP additionally comprises a second electrode having a planar portion and metal extensions extending from the planar portion into the cavities. The first electrode and the planar portion of the second electrode are formed of or comprise planar metal areas of the respective metallization levels, which can be formed by a damascene process, which allows for a reduction of the series resistance. A low aspect ratio can be obtained using one electrode having a 3D-structure (the electrode having extensions extending into the cavities).

Abstract: The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C.

Abstract: An integrated circuit for an imaging system is disclosed. In one aspect, an integrated circuit has an array of optical sensors, an array of optical filters integrated with the sensors and configured to pass a band of wavelengths onto one or more of the sensors, and read out circuitry to read out pixel values from the sensors to represent an image. Different ones of the optical filters are configured to have a different thickness, to pass different bands of wavelengths by means of interference, and to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non-monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract: A method is provided for time accurate execution of MAC logic on a processor able to drive a radio interface. In a first step, a chain of commands is received annotated with a target chain execution time. In a second step, start execution times for the commands are calculated based on the target chain execution time. Then, the chain of commands is executed on this processor at the start execution times.

Abstract: A device for phase shifting is disclosed, comprising an input amplifier, a biasing circuit, a first output amplifier and a second output amplifier being variable-gain amplifiers, and a quadrature hybrid coupler. The input amplifier is connected to an input port of the coupler, the first output amplifier is connected to a through port of the coupler, the second output amplifier is connected to a coupled port of the coupler, and the biasing circuit is connected to an isolated port of the coupler. The device also includes, the quadrature hybrid coupler configured to receive, at the input port, an input signal from the input amplifier, output, at the through port, a through signal, receive, at the isolated port, a bias signal from the biasing circuit, and output, at the coupled port, a coupled signal having a phase differing from a phase of the through signal.

Abstract: Systems and methods for providing improved linearity and reduced noise in a digital phase-locked loop in which a differential time-to-digital converter is implemented. Digital-to-time converters are used for adjusting a reference clock signal based on a fractional change signal and for adjusting a feedback signal based on another fractional change signal. Each fractional change signal is centered about a midpoint, M, and offset from the midpoint by a fraction, x, such that the fractional change signals can be described as (M+x) and (M?x), respectively. By implementing a differential time-to-digital converter, the sum of delays in each input path is kept constant so that integral non-linearity is improved. Supply sensitivity is also reduced, as the same supply is applied to both differential input paths. Since the differential delay can be both positive and negative, the delay range of a differential digital-to-time converter is half that of a single input digital-to-time converter.

Abstract: A high-gain, low power, electronic amplifier for amplification of a low magnitude voltage signal through a comparator-integrator amplification method for energy-aware applications is disclosed. The electronic amplifier comprises: a comparator arrangement with at least one comparator unit adapted to receive a first voltage signal to be amplified and a first feedback voltage signal, and to generate a first two-level voltage comparison signal; a integrator arrangement to receive the first two-level voltage comparison signal and generate a first amplifier output signal corresponding to an amplification of the voltage signal to be amplified; and a first feedback network to receive the first amplifier output signal and generate the first feedback voltage signal.

Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.

Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.

Abstract: Micro bump interconnection structures for semiconductor devices, and more specifically, a substrate structure comprising an array of micrometer scale copper pillar based structures or micro bumps eventually comprising a solder material and a method for manufacturing the same are provided.

Abstract: A method is provided for blocking a portion of a longitudinal through-hole during manufacture of a semiconductor structure, comprising the steps of: forming a stack comprising a hard mask comprising at least one trench, and a first coating filling the at least one trench and coating the hard mask, wherein the first coating comprises one or more materials that can be etched selectively with respect to a second coating; etching at least one vertical via in the first coating directly above the portion of the trench in such a way as to remove the first coating over at least a fraction of the depth of the trench, filling the at least one via with the second coating material, and removing the first coating selectively with respect to the second coating from at least the one or more longitudinal through-holes in such a way as to leave in place any of the first coating present directly underneath the second coating.

Abstract: Embodiments described herein relate to lens-free imaging. One example embodiment may include a lens-free imaging device for imaging a moving sample. The lens-free imaging device may include a radiation source configured to emit a set of at least two different wavelengths towards the moving sample. The lens-free imaging device is configured to image samples for which a spectral response does not substantially vary for a set of at least two different wavelengths. The lens-free imaging device may also include a line scanner configured to obtain a line scan per wavelength emitted by the radiation source and reflected by, scattered by, or transmitted through the moving sample. The line scanner is configured to regularly obtain a line scan per wavelength. Either the radiation source or the line scanner is configured to isolate data of the at least two different wavelengths.

Abstract: Within examples, a semiconductor device includes a first structure that includes a first doped semiconductor material of a first doping type. The semiconductor device further includes a metal in contact with the first structure, and a second structure that includes a second doped semiconductor material of the first doping type in contact with the first structure. A band off-set for majority charge carriers between the first doped semiconductor material and the second doped semiconductor material is sufficiently large for charge carriers from the second doped semiconductor material to be transferred into the first doped semiconductor material.

Abstract: Three transistor two junction magnetoresistive random-access memory (MRAM) bit cells provided. An example MRAM bit cell includes a first magnetic tunnel junction, MTJ, connected to a first bit line. The MRAM bit cell also includes a second MTJ connected to a second bit line. In addition, the MRAM bit cell includes a first transistor connected to the first MTJ and to a ground conductor. The MRAM bit cell further includes a second transistor connected to the second MTJ and to the ground conductor. Additionally, the MRAM bit cell includes a third transistor connected to the first transistor and to the second transistor.

Abstract: A method for forming a semiconductor device is disclosed. The method includes providing a semiconductor substrate. The method also includes epitaxially growing on the semiconductor substrate a first part of a III-V semiconductor nanostructure. The method further includes covering the first part of the III-V semiconductor nanostructure with a layer of a first material. Additionally, the method includes removing a top portion of the layer of the first material. Still further, the method includes epitaxially growing on the first part of the III-V semiconductor nanostructure a second part of the III-V semiconductor nanostructure. The method additionally includes covering the second part of the III-V semiconductor nanostructure with a layer of a second material. The second material is different from the first material. Even further, the method includes removing a top portion of the layer of the second material.

Abstract: The present disclosure relates to microbubble generator devices for deflecting objects in a liquid, systems for sorting objects that utilize such devices, and methods for fabricating such devices. At least one embodiment relates to a micro-fluidic device for deflecting objects in a liquid. The device includes a substrate for providing an object-containing liquid thereon. The device also includes a microbubble generator that includes at least one microbubble generating element. The microbubble generator is located on a surface of the substrate and in direct contact with the object-containing liquid when the object-containing liquid is provided on the substrate. The at least one microbubble generating element is configured to deflect a single object in the object-containing liquid through generation of a plurality of microbubbles.

Abstract: The present disclosure relates to a method for selectively forming a dielectric material on a first area of a top surface of a substrate. In an embodiment, the method involves providing the substrate including the top surface, the top surface including the first area and a second area, the first area having a hydrophilicity characterized by a water contact angle of at least 45° and the second area having a hydrophilicity characterized by a water contact angle of less than 40°. The method also involves providing a precursor aqueous solution on the substrate, the precursor aqueous solution including: a solvent, a dielectric material precursor, a catalyst for forming a dielectric material from the dielectric material precursor, and an ionic surfactant. Further, the method involves removing the solvent.

Abstract: A fluidic device for mixing a reagent fluid with a fluid sample comprises a supply channel having a reagent inlet, a sample inlet and a first reagent storage, coupled to the supply channel; a mixer for mixing the reagent with the fluid sample, having a mixer inlet coupled to the supply channel at a position in between the sample inlet and the first reagent storage; In a first stage, when the reagent fluid is supplied in the reagent inlet, the reagent is provided in the supply channel and the first reagent storage, and such that the reagent is thereafter stationed in the supply channel and the first reagent storage until a fluid sample is provided in the sample inlet. When the fluid sample is supplied in the sample inlet, the supplied fluid sample and the stationed reagent flows into the mixer thereby mixing both fluids.