Abstract: Embodiments described herein include a receiver, a method, and a plurality of high-pass filters for demodulating a radio frequency (RF) signal. An example receiver includes a plurality of high-pass filters. The receiver includes a demodulator configured to demodulate an RF signal received at an input of the demodulator and configured to output a demodulated signal. The receiver also includes a plurality of high-pass filters connected to an output of the demodulator. The plurality of high-pass filters are configured to receive the demodulated signal and configured to high-pass filter the demodulated signal. The plurality of high-pass filters are configured to operate with a first set of filter responses during a first time period of the demodulated signal and configured to operate with a second set of filter responses during a second time period of the demodulated signal.

Abstract: A semiconductor circuit comprises a Front End of Line (FEOL) comprising a plurality of transistors, each of which having a source region, a drain region and a gate region arranged between the source region and the drain region and comprising a gate electrode. The semiconductor circuit also comprises a buried interconnect that is arranged in the FEOL and electrically connected to the gate region from below through a bottom contact portion of the gate electrode. By using a buried interconnect the routing of the circuit may be facilitated.

Abstract: Embodiments described herein include an antimicrobial substrate surface. An example embodiment includes a structure that includes an antimicrobial surface on a substrate. The antimicrobial surface includes a plurality of nanostructures. Each nanostructure includes a nanopillar on the substrate. The nanopillar has a height. Each nanostructure also includes a head covering a distal end and at least part of the height of the nanopillar.

Abstract: A spectrometer is provided. The spectrometer may include an image sensor including a pixel array; and a photonics layer disposed on the pixel array and including a plurality of resonators and a plurality of couplers evanescently coupled to the plurality of resonators.

Abstract: An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.

Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

Abstract: The present disclosure relates to a III-N based substrate for power electronic devices, comprising a base substrate, a III-N laminate above the base substrate and a buffer layer structure between the base substrate and the III-N laminate. The buffer layer structure comprises at least a first superlattice laminate and a second superlattice laminate above the first superlattice laminate. The first superlattice laminate comprises a repetition of a first superlattice unit which consists of a plurality of first AlGaN layers. The second superlattice laminate comprises a repetition of a second superlattice unit which consists of a plurality of second AlGaN layers. An average aluminum content of the first superlattice laminate is a predetermined difference greater than an average aluminum content of the second superlattice laminate, to improve the vertical breakdown voltage. The present disclosure also relates to a method for manufacturing a III-N based substrate for power electronic devices.

Abstract: The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral component of a spin wave propagating through the spin wave waveguide so as to provide a filtered spin wave. The magneto-electric cell comprises an electrode for receiving a control voltage, and adjusting the control voltage controls a spectral parameter of the spectral component of the spin wave via an interaction, dependent on the control voltage, between the magneto-electric cell and a magnetic property of the magnonic crystal structure.

Abstract: A method of DAC mismatch calibration in a SAR ADC is disclosed. In one aspect, the method comprises determining a number of bits of an analog input signal (VIN), detecting if a binary code determined from the analog input signal (VIN) matches at least one trigger code, using at least one setting code to determine a calibration residue signal (V*RES) and a calibration bit (B*LSB), analyzing a least significant bit of the digital signal (COUT) and the calibration bit (B*LSB), determining an indication of a presence of DAC mismatch, and calibrating the DAC mismatch. As the determination of the calibration bit (B*LSB) requires only one additional comparison, when compared to the normal operation, the normal operation does not need to be interrupted. Therefore, the calibration can be done in the background and, as such, can be performed frequently thereby taking into account time-varying changes due to environmental effects.

Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

Abstract: A device for extracting at least one object characteristic of an object (106) is presented, the device comprising: a light sensor (101) for recording a hologram of an object and a processing unit (102) coupled to the light sensor and configured for extracting at least one object characteristic from the hologram; wherein the processing unit is configured for extracting the at least one object characteristic from a section of the hologram without reconstructing an image representation of the object. Further, a device (200) for sorting an object (106), a method for identifying an object and a method for sorting objects is presented.

Abstract: The invention relates to a multi-channel spectrometer device (10) for detecting/quantifying a predetermined analyte (5) in a medium (6). The device (10) comprises an input (11) for receiving radiation (7), a first plurality of optical modulators (12) adapted for transforming the radiation (7) in accordance with a first transfer function, and a second plurality of optical modulators (13) adapted for transforming the radiation (7) in accordance with a second transfer function. The spectrometer device also comprises a detector (15) for generating output signals (4) indicative for the intensity of each transformed radiation signal. The ratio of the number of optical modulators in the first plurality and the number of optical modulators in the second plurality is determined by the ratio of a reference spectrum of the predetermined analyte transformed by the first transfer function and the reference spectrum transformed by the second transfer function.

Abstract: The present disclosure relates to low-layer memory for a computing platform. An example embodiment includes a memory hierarchy being directly connectable to a processor. The memory hierarchy includes at least a level 1, referred to as L1, memory structure comprising a non-volatile memory unit as L1 data memory and a buffer structure (L1-VWB). The buffer structure includes a plurality of interconnected wide registers with an asymmetric organization, wider towards the non-volatile memory unit than towards a data path connectable to the processor. The buffer structure and the non-volatile memory unit are arranged for being directly connectable to a processor so that data words can be read directly from either of the L1 data memory and the buffer structure (L1-VWB) by the processor.

Abstract: The present disclosure relates to semiconductor devices with gate-controlled energy filtering. One example embodiment includes a semiconductor device. The semiconductor device includes a first electrode, a second electrode, and a channel therebetween. The semiconductor device also includes a first interference structure located in the channel. Further, the semiconductor device includes a first gate for controlling a voltage over the first interference structure.

Abstract: A sensor device for quantifying luminescent targets configured in an at least one dimensional pattern. The sensor device comprises a detector for obtaining an at least one dimensional pattern of measured signals, wherein the detector is adapted for detecting the luminescence of the luminescent targets, resulting in a measured pattern. The sensor device moreover comprises a processor configured to correlate the measured pattern with at least one reference pattern, so as to generate a measurement signal representative for the quantification of luminescent targets. The at least one reference pattern is a recorded pattern or an expected pattern. A recorded pattern is a pattern which is obtained by the detector before the measured pattern is obtained.

Abstract: A radiation carrier for carrying at least a radiation beam has, on a surface thereof, at least one excitation grating, for directing at least an excitation radiation beam directionally out of the radiation carrier, thereby illuminating a region of interest; and at least one structure for redirecting emission radiation emanating from the region of interest. Further a sensor is provided comprising at least one such radiation carrier and at least one detector, the structure being adapted for redirecting radiation from the region of interest into the at least one detector.

Abstract: A sensor device for quantifying luminescent targets comprises a light source, a detector, a modulator, and a processor. The light source is adapted for exciting the luminescent target. The detector is adapted for detecting the luminescence of the luminescent target resulting in a measured signal which comprises a desired signal originating from the luminescent target and a background signal. The modulator is adapted for modulating a physical parameter resulting in a modulation of the desired signal which is different from the modulation of the background signal. The processor is configured to correlate the modulation of the physical parameter with the modulation of the desired signal and/or the modulation of the background signal.

Abstract: At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.

Abstract: Provided are a Bragg grating and a spectroscopy device including the same. The Bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.

Abstract: An image sensor for converting incident light into digital signals is disclosed. In one aspect, the image sensor includes a matrix of light-sensitive pixels arranged in a plurality of pixel columns each having a predetermined lateral extent. The image sensor includes an analog-to-digital converter block including a plurality of analog-to-digital converters (ADCs). Each of the plurality of ADCs includes an analog processing portion adapted to receive at least one analog signal from a pixel column of the matrix and to generate at least one digital signal from the received analog signal. Each of the plurality of ADCs includes a digital processing portion adapted to receive said at least one digital signal from said corresponding analog processing portion. The lateral extent of at least one of the digital processing portions is greater than the lateral extent of its corresponding analog processing portion.