Abstract: A method of determining a value of a depth of a semiconductor junction of a substrate using a photomodulated optical reflectance measurement technique is disclosed. In one aspect, the method includes obtaining a substrate which has at least a first region including the semiconductor junction. The method further includes obtaining a reference region. the method further includes performing at least one sequence of: a) selecting a set of measurement parameters for the photomodulated optical reflectance measurement, b) measuring on the at least a first region a first optical signal representative of the substrate with the semiconductor junction using the selected set of parameters, c) measuring on the reference region a second optical signal using the selected set of parameters, and d) determining the ratio of the first optical signal to the second optical signal, and thereafter extracting from the ratio the depth of the semiconductor junction.

Abstract: The present invention provides a method (80) for manufacturing a semiconductor tip. The method comprises obtaining (81) a substrate provided with a layer of tip material, providing (82) a doping profile in the layer of tip material, the doping profile comprising a tapered-shaped region of a first dopant concentration, undoped or lightly doped, e.g. having a dopant concentration of 1017 cm?3 or lower, surrounded by a region of a second dopant concentration, highly doped, e.g. having a dopant concentration above 1017 cm?3, the first dopant concentration being lower than the second dopant concentration, and isotropically etching (83) the layer of tip material by using an etch chemistry for which the etch rate of tip material with the second dopant concentration is substantially higher than the etch rate of the tip material with the first dopant concentration.

Abstract: The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.

Abstract: Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.

Abstract: A device for manipulating magnetic or magnetizable objects in a medium is provided. The device has a surface lying in a plane and comprises a set of at least two conductors electrically isolated from each other, wherein the at least two conductors are adapted for both generating a magnetophoresis force for moving the magnetic or magnetizable objects over the surface of the device in a direction substantially parallel to the plane of the surface, and generating a dielectrophoresis force for moving the magnetic or magnetizable objects in a direction substantially perpendicular to the plane of the surface. Also provided is a method for manipulating magnetic or magnetizable objects in a medium. The method uses a combined magnetophoresis and dielectrophoresis actuation principle for controlling in-plane as well as out-of-plane movement of the magnetic or magnetizable objects.

Abstract: The electronic device for sensing and/or actuating comprises a device surface to which an biological cell (40) is applied, further comprising a sensor and/or an actuator (25), and an access channel (20) with a channel port (21), said channel port being located in said surface. The access channel (20) is designed such that the biological cell (40) can enter the access channel (20) to thereby provide access to the sensor (25). Particularly the cell (40) forms a protruding portion (41) by entering the access channel (20), which portion is sensed. The access channel (20) may be provided with a specific sensor port at which the sensor (25) is present. The device may be used for sensing or actuating biological cells, such as neurons, for instance in electroporation treatments.

Abstract: A circuit for end-of-burst detection in a portion of a received bit stream is disclosed. The circuit comprises: a first counter for counting the number of bits in the portion, a second counter for counting the number of bit value transitions in the portion, and a circuit for comparing the counted number of bits in the portion and the counted number of bit value transitions therein with preset values, the circuit for comparing is further arranged for generating a signal indicative of end-of-burst detection based on the result of the comparison.

Abstract: An optical shear sensor that includes a first and second outer surface at opposing sides and a sensing element is disclosed. In one aspect, the sensing element has an optoelectronic source for emitting light of a predetermined wavelength and having a source front surface where light exits the optoelectronic source, and a photodetector for detecting light of the predetermined wavelength and having a detector front surface where light of the optoelectronic source is received. The optoelectronic source is positioned along the first outer surface and emits light towards the second outer surface. A flexible sensing layer transparent to the predetermined wavelength covers the front surface of the optoelectronic source and the front surface of the photodetector. Upon application of a shear stress, the sensing layer deforms elastically and the outer surfaces are displaced along directions parallel to each other and the source front surface so the intensity of light detected by the photodetector changes.

Abstract: A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions.

Abstract: The present invention is related to an analog to digital converter circuit. The circuit comprises at least one input node for applying an analog input voltage signal (Vin), means for sampling said analog input voltage signal, a first array of capacitors arranged for receiving the sampled analog input voltage signal, a digital delay line connected to the first array of capacitors and arranged for being enabled by a clock generator and for generating a staircase or slope function by means of the first capacitor array, taking into account the sampled analog input voltage signal, a comparator arranged for comparing a converted signal with a reference voltage (Vref), said converted signal being a version of said sampled analog input voltage converted according to said staircase or slope function, and for generating a stop signal based on the comparison result thereby latching the digital delay line and thereby acquiring the digital code.

Abstract: A method involving ion milling is demonstrated to fabricate open-nanoshell suspensions and open-nanoshell monolayer structures. Ion milling technology allows the open-nanoshell geometry and upward orientation on substrates to be controlled. Substrates can be fabricated covered with stable and dense open-nanoshell monolayer structures, showing nanoaperture and nanotip geometry with upward orientation, that can be used as substrates for SERS-based biomolecule detection.

Abstract: A junction-photovoltage method and apparatus for contactless determination of an electrical/physical parameter of a semiconductor structure having at least one p-n junction located at a surface is disclosed. In one aspect, the method includes illuminating the surface with the p-n junction with a light beam of a first wavelength to create excess carriers at the surface. The method also includes modulating the light intensity of the light beam at a single predefined frequency. The method also includes determining a first photo-voltage at a first position inside the illuminated area and a second photo-voltage at at least a second position outside the illuminated area. The method also includes calculating an electrical/physical parameter of the semiconductor structure based on the first and second photo-voltage.

Abstract: An optical coupler for processing radiation is described. The optical coupler comprises a first deep-shallow waveguide and a second deep-shallow waveguide for guiding radiation in a propagation direction. Each of the deep-shallow waveguides is a waveguide comprising a shallow etched portion and an unetched portion having a width substantially constant along the propagation direction. The width of the shallow etched portion is substantially larger than the width of the unetched portion. The shallow etched portion of the first deep-shallow waveguide and the shallow etched portion of the second deep-shallow waveguide are arranged sufficiently close for coupling radiation from the first deep-shallow waveguide to the second deep-shallow waveguide.

Abstract: A test access architecture is disclosed for 3D-SICs that allows for both pre-bond die testing and post-bond stack testing. The test access architecture is based on a modular test approach, in which the various dies, their embedded IP cores, the inter-die TSV-based interconnects, and the external I/Os can be tested as separate units to allow optimization of the 3D-SIC test flow. The architecture builds on and reuses existing design for test (DfT) hardware at the core, die, and product level. Test access is provided to an individual die stack via a test structure called a wrapper unit.

Abstract: A method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.

Abstract: A digital front-end circuit is disclosed. In one aspect, the circuit includes a filtering block for filtering received data. The filtering block has a first filter branch for filtering the received data in a first frequency band and a second filter branch for filtering the received data in a selected second frequency band. The second filter branch is in parallel with the first filter branch, is programmable and includes a block for resampling the received data. The front-end circuit also includes a circuit for performing synchronization and spectrum sensing on the received data, which is in connection with the output of the filtering block. The front-end circuit also includes a controller block for controlling the filtering block and the synchronization circuit.

Abstract: Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) providing an insulating layer on a top surface of the semiconductor substrate, c) making an amorphous layer in a top layer of said semiconductor substrate by a suitable implant, d) implanting a dopant into said semiconductor substrate through said insulating layer to provide said amorphous layer with a predetermined doping profile, said implant being performed such that said doping profile has a peak value located within said insulating layer, e) applying a solid phase epitaxial regrowth action to regrow said amorphous layer and activate said dopant.

Abstract: A method and system are disclosed for gathering information about an object including single domain particles which have a diameter in the range of about 5 to 80 nm. In one aspect, a method includes generating a static magnetic field of less than about 0.1 Tesla on the object and generating an RF energy, pulsed or continuous wave, so as to generate electron paramagnetic resonance of the single domain particles. The method also includes detecting the electron paramagnetic resonance of the single domain particles in the form of an image of the object. The single domain particles may have a predetermined diameter and a predetermined saturation magnetization and the applied magnetic field may be such that the single domain particles reach a magnetization being at least about 10% of the saturation magnetization. The method may be used for detecting tags in an object and for activating tags.

Abstract: A virtual camera system comprises a plurality of physical cameras and a hardware setup miming software to create virtual viewpoints for the virtual camera system. The position of the physical cameras is constrained, where the main constraint is the overlap between the physical cameras. The present invention provides a method for creating a virtual viewpoint of a plurality of images captured by the plurality of cameras, the images comprising current frames and previous frames.

Abstract: An analog-to-digital (A/D) converter circuit arranged for receiving an analog input signal and for outputting a digital representation of said analog input signal is described.