Abstract: The present system and method relate to a system for performing a multiplication. The system is arranged for receiving a first data value, and comprises means for calculating at run time a set of instructions for performing a multiplication using the first data value, storage means for storing the set of instructions calculated at run time, multiplication means arranged for receiving a second data value and at least one instruction from the stored set of instructions and arranged for performing multiplication of the first and the second data values using the at least one instruction.

Abstract: The present invention relates to a method for forming metal-silicide catalyst nanoparticles with controllable diameter. The method according to embodiments of the invention leads to the formation of ‘active’ metal-suicide catalyst nanoparticles, with which is meant that they are suitable to be used as a catalyst in carbon nanotube growth. The nano-particles are formed on the surface of a substrate or in case the substrate is a porous substrate within the surface of the inner pores of a substrate. The metal-silicide nanoparticles can be Co-silicide, Ni-silicide or Fe-silicide particles. The present invention relates also to a method to form carbon nanotubes (CNT) on metal-silicide nanoparticles, the metal-silicide containing particles hereby acting as catalyst during the growth process, e.g. during the chemical vapor deposition (CVD) process. Starting from very defined metal-containing nanoparticles as catalysts, the diameter of grown CNT can be well controlled and a homogeneous set of CNT will be obtained.

Abstract: In one aspect, there is a formalized method for mapping applications on a multiprocessor system. In particular re-use possibilities are explored, e.g. focus on data transfer and memory access issues, with the aim of obtaining low-power and low-energy mappings and/or to overcome memory performance or energy bottlenecks.

Abstract: A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.

Abstract: A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack.

Abstract: The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the base layer; one or more interconnect structures, each of said structures comprising: a via filled with an electrically conductive material, said via running through the complete thickness of the base layer, thereby forming an electrical connection between said front side and back side surfaces of the base layer, and on the back side surface of the base layer: a landing pad and a micro-bump in electrical connection with said filled via; characterized in that the backside surface of said base layer comprises one or more isolation ring trenches each of said trenches surrounding one or more of said interconnect structures. The disclosure is equally related to methods for producing said substrates and stacks of substrates.

Abstract: Enhancement mode III-nitride HEMT and method for manufacturing an enhancement mode III-nitride HEMT are disclosed. In one aspect, the method includes providing a substrate having a stack of layers on the substrate, each layer including a III-nitride material, and a passivation layer having high temperature silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the HT silicon nitride is formed by MOCVD or LPCVD or any equivalent technique at a temperature higher than about 450° C. The method also includes forming a recessed gate region by removing the passivation layer only in the gate region, thereby exposing the underlying upper layer. The method also includes forming a p-doped GaN layer at least in the recessed gate region, thereby filling at least partially the recessed gate region, and forming a gate contact and source/drain contacts.

Abstract: The present invention relates to a large time constant steering circuit for slowly changing a voltage on a node between at least two discrete voltage levels. The present invention further relates to a slow steering current DAC comprising said large time constant steering circuit. The present invention further relates to an instrumentation amplifier device comprising a current balancing instrumentation amplifier for amplifying an input signal to an amplified output signal and a DC servo-loop for removing a DC-component from the input signal. The present invention further relates to an EEG acquisition ASIC comprising said instrumentation amplifier device.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: A communication device is disclosed. The device may be in particular a radio transmitter and a receiver that can operate with low power consumption and with improved interference rejection, therefore particularly suitable for use in low-power communication systems, such as wireless sensor networks and wireless body area networks. In one aspect, multiple frequency tones (carriers) are used to carry information from the transmitter, such that a RF signal having multiple radio frequency components is produced and transmitted. In the receiver, an envelope detector is still the RF down-converter. After down-converting intermodulation components are extracted containing amplitude, phase and frequency information of the multiple radio frequency components. This allows the desired signal (the baseband information) to be distinguished from the carriers and unwanted interference.

Abstract: A method and device is disclosed for continuously and simultaneously measuring an impedance signal and a biopotential signal on a biological subject's skin. In one aspect, the method includes attaching input and output electrodes to the biological subject's skin and applying a predetermined alternating current having a first frequency to the output electrodes for creating an alternating voltage signal over the input electrodes. The first frequency is above a predetermined minimum frequency. The method also includes measuring an input signal from the input electrodes which includes a biopotential signal and the alternating voltage signal. The method also includes extracting from the input signal the biopotential signal and the alternating voltage signal, and determining the impedance signal from the alternating voltage signal. The alternating voltage signal is extracted by amplifying and demodulating the input signal using a control signal having a frequency equal to the first frequency.

Abstract: The present disclosure is related to a selector device for memory applications. The selector device for selecting a memory element in a memory array comprises an MIT element and a decoupled heater, thermally linked to the MIT element. The MIT element comprises a MIT material component and a barrier component and is switchable from a high to a low resistance state by heating the MIT element above a transition temperature with the decoupled heater. The barrier component is provided to increase the resistance of the MIT element in the high resistance state.

Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: This invention provides monomeric compounds represented by the structural formula (I) or the structural formula (II) which can be polymerized into crosslinkable polymers useful for producing opto-electronic devices.

Abstract: A semiconductor package is disclosed. In one aspect, the package includes a base frame and a wiring substrate mounted on the base frame. The base frame has two pieces made of a material with respectively a first and a second coefficient of thermal expansion and connected to each other via resilient connecting structures. The wiring substrate has electric wiring tracks providing the electric connection between first and second bond pads, provided for being electrically connected to bond pads on respectively a die and a printed wiring board. The electrical wiring tracks have flexible parts provided to expand and contract along with the resilient connecting structures.

Abstract: The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle (10) on a substrate (1), each of the microneedles (10) comprising at least one channel (7, 8) surrounded by an insulating layer (6). The present invention also provides a method for making such an electronic device for sensing and/or actuating.

Abstract: Methods are provided for obtaining soluble or insoluble poly(iptycenylene vinylene) homo- and co-polymers via a soluble precursor polymer. The polymers obtained by the methods can be used in electronic or opto-electronic devices, e.g., chemosensors.

Abstract: A method for producing a GaNLED device, wherein a stack of layers comprising at least a GaN layer is texturized, is disclosed. The method involves (i) providing a substrate comprising on its surface said stack of layers, (ii) depositing a resist layer directly on said stack, (iii) positioning a mask above said resist layer, said mask covering one or more first portions of said resist layer and not covering one or more second portions of said resist layer, (iv) exposing said second portions of said resist layer to a light source, (v) removing the mask, and (vi) bringing the resist layer in contact with a developer comprising potassium, wherein said developer removes said resist portions that have been exposed and texturizes the surface of at least the top layer of said stack by wet etching said surface, in the areas situated underneath said resist portions that have been exposed.

Abstract: Disclosed an electronic device comprising an ovenized system containing a micro-electromechanical (MEM) resonator and a method for controlling such an MEM resonator. In one embodiment, the MEM resonator comprises a resonator body suspended above a substrate by means of at least a first and a second mechanical support forming a first and a second heating resistance, respectively, configured to heat the resonator body through Joules heating, biasing means configured to apply a bias voltage to the resonator body to enable vibration at a predetermined operating frequency, a temperature control system configured to control the temperature of the micro-electromechanical resonator, and an internal voltage monitoring system configured to monitor a voltage level of the resonator body.