Abstract: A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.

Abstract: Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.

Abstract: A trimming system for determining a trim solution for a semiconductor device includes an internal value generating circuit for generating an internal value based upon a counter value. The relationship between the internal delay value and an external reference is compared to determine if the counter value is a possible trim solution, while predetermined counter values are excluded as a trim solution.

Abstract: A single-chip network processor (12) for a Voice-over-Internet Protocol phone integrates a universal serial bus port (21), a pair of IEEE 802.3 MACs (40), and repeater, and a pair of pulse code modulation (PCM) ports (24) such that the network processor can be easily combined with other peripherals to transmit both voice and computer data over an Internet protocol network.

Abstract: An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer having a non-uniform profile over the wafer, and forming an interlayer dielectric over the stress formation layer and the wafer.

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

Abstract: Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.

Abstract: Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.

Abstract: The present invention includes an error correction circuit with a data memory, a control circuit, a parity memory, and a recorder. The data memory is configured to receive and store a set of data. The control circuit is configured to receive the set of data and to generate parity bits in response thereto. A parity memory is coupled to the control circuit and configured to receive and hold parity bits. The control circuit is further configured to combine the parity bits from the parity memory with the set of data from the data memory to determine whether an error occurred in the set of data. The recorder is coupled to the control circuit and configured to record an indication of whether an error occurred in the set of data.

Abstract: A multithreaded processor includes a thread ID for each set of fetched bits in an instruction fetch and issue unit. The thread ID attaches to the instructions and operands of the set of fetched bits. Pipeline stages in the multithreaded processor stores the thread ID associated with each operand or instruction in the pipeline stage. The thread ID are used to maintain data coherency and to generate program traces that include thread information for the instructions executed by the multithreaded processor.

Abstract: A method of forming a dual segment liner covering a first and a second set of semiconductor devices is provided. The method includes forming a first liner and a first protective layer on top thereof, the first liner covering the first set of semiconductor devices; forming a second liner, the second liner having a first section covering the first protective layer, a transitional section, and a second section covering the second set of semiconductor devices, the second section being self-aligned to the first liner via the transitional section; forming a second protective layer on top of the second section of the second liner; removing the first section and at least part of the transitional section of the second liner; and obtaining the dual segment liner including the first liner, the transitional section and the second section of the second liner. A semiconductor structure with a self-aligned dual segment liner formed in accordance with one embodiment of the invention is also provided.

Abstract: A device or method for activating a memory, which includes receiving a select signal at the memory, receiving a plurality of address bits at the memory, determining whether the select signal is active, determining whether a first bit in the plurality of address bits has a first value, and activating the memory only if the select is active and the first bit has the first value.

Abstract: A method of making a conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The magnetic liner is preferably a super-paramagnet with high susceptibility or a ferromagnet with a microstructure where the size of the non-exchanged coupled micro domains is so small that their energy content is close to or small compared to kT that such films have super-paramagnetic properties and essentially behave like a paramagnet with high susceptibility.

Abstract: A semiconductor structure includes a base semiconductor substrate having a doped region located therein, and an epitaxial region located over the doped region. The semiconductor structure also includes a final isolation region located with the doped region and the epitaxial region. The final isolation region has a greater linewidth within the doped region than within the epitaxial region. A method for fabricating the semiconductor structure provides for forming the doped region prior to the epitaxial region. The doped region may be formed with reduced well implant energy and reduced lateral straggle. The final isolation region with the variable linewidth provides a greater effective isolation depth than an actual trench isolation depth.

Abstract: A testing system has a processor, a module and at least one manufactured semiconductor device. The processor is configured to send and receive testing signals. The module is electrically coupled to the processor. The at least one manufactured semiconductor device is mounted on the module, and the semiconductor device has a plurality of pins at least one of which is a non-functional pin. The system is configured to provide the processor access to the semiconductor device. An external device monitors voltage at the non-functional pin of the semiconductor device.

Abstract: Disclosed are embodiments of a bi-layer bottom anti-reflective coating (BARC) with graded optical properties (i.e., a graded refractive index) and a method of forming the BARC. The BARC is formed by sequentially coating two BARC layers onto a substrate. Each BARC layer comprises a polymer and an optical component, each has slightly different optical properties, and each is processed such that either the polymers partially intermix or the optical component partially diffuses between the layers in order to create a graded chromophore concentration across the resulting BARC. Thus, a gradual transition of optical properties is created from the substrate/BARC interface to the BARC/photo-resist interface.

Abstract: A communication receiver amplifies a pulse-amplitude-modulated (PAM) signal representing an integer-valued sequence of first data elements (D1) with an adjustable first gain (G1) and digitizes the amplified signal to produce a sequence of second data elements (D2) representing successive magnitudes of the PAM signal. A first automatic gain control (AGC) circuit determines the rate at which magnitudes of the second data sequence elements fall within a first range and adjusts G1 to maintain that rate within a second range. Digital signal processing circuits within the receiver process the second data to produce a sequence of third data elements (D3), each having a real number value substantially equal to a product of a second gain G2 and a corresponding one of the first data elements D1. A slicer rounds the real number represented by each third data sequence element to produce a corresponding integer-valued element of a fourth data sequence (D4).

Abstract: Provided is a method of manufacturing a semiconductor device with enhanced electrical characteristics. The method includes disposing a substrate on a substrate support in a process chamber, pre-heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 60 seconds or more, forming a silicon protective layer on the substrate by supplying a silicon source gas into the process chamber and heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 10 seconds or more, and forming a tungsten layer on the silicon protective layer.

Abstract: A bit line sensing scheme is provided for a semiconductor memory device that significantly reduces current drain during a self-refresh mode. After bit line sensing of a selected wordline and deactivation of the selected wordline, a capacitor is connected to a source node associated with a bit line sensing amplifier for the selected wordline to charge the capacitor with charge remaining on the bit line. Then, during the next activate-precharge cycle for another selected wordline, the capacitor is coupled to the source node of a bit line sensing amplifier associated with another selected wordline to discharge charge stored by the capacitor to the bit line associated with said other selected wordline. Thus, charge is returned from the bit line to the capacitor. This is where the self-refresh current reduction is achieved.

Abstract: A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.