Abstract: A fabrication method of a semiconductor device is described. Generally, the method includes forming a customizable oxide-nitride-oxide (ONO) stack over a substrate in an in-situ atomic layer deposition (ALD) tool or chamber. Radical oxidation or oxide deposition process steps are performed to form tunnel dielectric layer overlying the substrate. Silicon nitride deposition process steps are also performed to form a multi-layer charge trapping (CT) layer in which at least some of the process parameters of silicon nitride deposition process steps are adjusted when forming the first and second CT sub-layers of the multi-layer CT layer. Subsequently, radical oxidation or oxide deposition process steps are performed in the ALD tool to form a blocking dielectric layer overlying the multi-layer CT layer.

Abstract: A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on or above the carrier, an electrically insulating and thermally conductive layer on at least part of an upper main surface of the electronic component, and a metal block on the electrically insulating and thermally conductive layer. An encapsulant at least partially encapsulates the electronic component, the carrier, the electrically insulating and thermally conductive layer and the metal block so that an upper main surface of the metal block is exposed beyond the encapsulant.

Abstract: An automotive radar arrangement includes a radar receiver configured to generate radar reception data from radio signals received by a plurality of radar receive antennas. A radar signal processor is configured to determine an estimate of an angular position of at least one object by processing the radar reception data. A communication interface is configured to receive information about a reference angular position of the at least one object. A determiner is configured to determine a compensation for the radar reception data based on the estimate of the angular position and the reference angular position of the at least one object. The radar signal processor is configured to correct the radar reception data and/or further radar reception data for the detection of a further object based on the compensation. An output interface is configured to provide information about the presence of the further object to a vehicle controller.

Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.

Abstract: A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

Abstract: The described techniques are directed to inductive torque sensors that implement independent target coil and pickup coil systems. By utilizing the various principles of inductive angle sensors, and as a result of the specific physical arrangement of target coils, the inductive torque sensor may independently obtain a rotational position (i.e., mechanical angle) of the rotatable input shaft via one pickup coil system, and a rotational position (i.e., mechanical angle) of the rotatable output shaft via another pickup coil system. Combiner circuitry is also provided to calculate the torsion angle using the signals induced in each of two separate pickup coil systems. By using different k-fold symmetry periodicities in the target coils with respect to the coil configurations, the inductive torque sensor advantageously reduces or eliminates mutual coupling between the different target coil systems and provide robustness to stray or external electromagnetic fields.

Abstract: A single-ended to differential converter includes a converter input, a first converter output, a second converter output, and an internal node, wherein the first converter output and the second converter output comprise a differential output; a non-inverting amplifier having an input coupled to the converter input, and an output coupled to the first converter output; an inverting amplifier having an input coupled to the first converter output, and an output coupled to the second converter output; a charge pump having a charge pump output capacitor coupled between the second converter output and the internal node; and a feedback capacitor coupled between the first converter output and the internal node.

Abstract: A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.

Abstract: A semiconductor arrangement includes a controllable semiconductor element having an active region, and bonding wires arranged in parallel to each other in a first horizontal direction. The active region has a first length in the first horizontal direction and a first width in a second horizontal direction perpendicular to the first horizontal direction. Each bonding wire is electrically and mechanically coupled to the controllable semiconductor element by a first number of bond connections arranged above the active region. A first bond connection of each bonding wire is arranged at a first distance from a first edge of the active region. A second bond connection of each bonding wire is arranged at a second distance from a second edge of the active region opposite the first edge. The first and second distances are both less than the first length divided by twice the first number of bond connections.

Abstract: A semiconductor module arrangement includes a housing, a first semiconductor substrate arranged inside the housing, a second semiconductor substrate arranged inside the housing, a first plurality of controllable semiconductor elements, and a second plurality of controllable semiconductor elements. During operation of the semiconductor module arrangement, each controllable semiconductor element of the first plurality of controllable semiconductor elements generates switching losses and conduction losses, the switching losses being greater than the conduction losses. Further during operation of the semiconductor module arrangement, each controllable semiconductor element of the second plurality of controllable semiconductor elements generates switching losses and conduction losses, the conduction losses being greater than the switching losses.

Abstract: A clamping circuit for protection against ESD events is described. In accordance with one exemplary embodiment, the circuit comprises the following: a first transistor having a control terminal and a load current path connected between a first contact and a second contact; an amplifier circuit having an amplifier input and an amplifier output connected to the control terminal of the transistor; and a trigger circuit, which is connected between the first contact and the second contact, and comprises a second transistor. The trigger circuit is configured to generate a voltage swing at the amplifier input as a reaction to a discharge current at the first contact by virtue of the fact that at least part of the discharge current drives a control terminal of the second transistor via an intrinsic capacitance of the second transistor.

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Abstract: In accordance with an embodiment, a circuit includes: a trimmable reference current generator having a temperature dependent current output node, the trimmable reference current generator including: a proportional to absolute temperature (PTAT) current generation circuit; a first programmable current scaling circuit coupled to the PTAT current generation circuit and including a first output coupled to the temperature dependent current output node; a constant current generation circuit; a second programmable current scaling circuit coupled to the constant current generation circuit and including a first output coupled to the temperature dependent current output node; and a reference interface circuit having an input coupled to the temperature dependent current output node and an output configured to be coupled to a reference current input of a memory sense amplifier.

Abstract: An object sensor test system includes a sensor and a test bench. The sensor includes a receiver configured to receive a simulated optical signal and a processing chain that includes a plurality of processing components configured to process at least one measurement signal generated in response to the simulated optical signal to generate processed test data. The sensor also includes a test interface configured to receive a control signal, and selectively extract processed test data at a selected output of the processing chain based on the control signal. The test bench is configured to transmit the control signal to the test interface, receive the processed test data from the sensor, compare the received processed test data with expected data to generate a comparison result, and determine that a segment of the processing chain is operating normally or abnormally based on the comparison result.

Abstract: An apparatus for correcting an input signal is configured for receiving the input signal, the received input signal comprising a series of input values. The apparatus is configured for matching a series of template values to the series of input values by warping the series of template values and the series of input values relatively to each other so as to assign one or more template values to one or more input values, wherein the series of template values represents an approximation of a noise signal that is expected to be comprised in the input signal. The apparatus is configured for obtaining a series of corrected input values based on a mismatch between the input values and their respective assigned template values. The apparatus is configured for providing a corrected signal based on the series of corrected input values.

Abstract: A calibration circuit, including: a signal generator circuit configured to generate a modulated analog input signal, which is based on a digital input word that is modulated; an Analog-to-Digital Converter (ADC) configured to convert an analog reference signal to a digital calibration word, wherein the analog reference signal is a low-pass-filtered version of the analog input signal generated by the signal generator circuit; and a feedback circuit configured to output the digital input word by adjusting the digital calibration word depending on a digital feedback signal, which is based on a modulated version of the analog reference signal, wherein the signal generator circuit, the ADC, and the feedback circuit are provided on a same chip.

Abstract: An electrical circuit for providing an output signal based on a first input signal and a second input signal has: a mixer which is configured to receive and mix the first and second input signals in order to generate a mixer output signal and to switch on or off based on the first input signal, wherein a DC signal component of the mixer output signal depends on whether the mixer is switched on or off; and a downstream circuit which is configured to switch on or off based on the DC signal component of the mixer output signal and to provide the output signal based on the mixer output signal.

Abstract: A baseplate for a semiconductor module comprises at least one elevation. The at least one elevation is formed integrally with the baseplate. The baseplate has a uniform first thickness or a thickness which decreases continuously from the edge regions toward the center and which is increased locally up to a maximum second thickness in the region of each of the at least one elevation.

Abstract: A touch sensor includes a touch structure; a signal generator configured to generate an excitation signal; a transmitter configured to receive the excitation signal and transmit an ultrasonic transmit wave towards the touch structure based on the excitation signal; a receiver configured to receive an ultrasonic reflected wave produced by a reflection of the ultrasonic transmit wave at the touch structure, wherein the transmitter and the receiver are coupled by a capacitive path, the receiver is configured to be influenced by the excitation signal whereby the excitation signal induces a capacitive cross-talk on the capacitive path, and the receiver is configured to generate a measurement signal representative of the capacitive cross-talk; and a measurement circuit coupled to the receiver and configured to perform a comparison of the measurement signal with a threshold to determine whether a no-touch event or a touch event has occurred at the touch interface.

Abstract: A triple-membrane MEMS device includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, a sealed low pressure chamber between the first membrane and the third membrane, a first stator and a second stator in the sealed low pressure chamber, and a signal processing circuit configured to read-out output signals of the triple-membrane MEMS device.