Patents Assigned to InterUniversitaire Microelektronica
  • Publication number: 20070261082
    Abstract: In one aspect, a method of operating a wireless system is disclosed. The method comprises allocating each video packet to a plurality of user specific priority queues. The method further comprises assigning each of the queues to a video quality layer. The method further comprises selectively dropping of one or more of video packets in cases of network congestion based on the video quality layer information.
    Type: Application
    Filed: April 6, 2007
    Publication date: November 8, 2007
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Xin Ji, Sofie Pollin, Bruno Bougard, Greogry Lenoir, Francky Cathoor
  • Publication number: 20070257750
    Abstract: One inventive aspect relates to a reconfigurable cavity resonator. The resonator comprises a cavity delimited by metallic walls. The resonator further comprises a coupling device for coupling an electromagnetic wave into the cavity. The resonator further comprises a tuning element for tuning a resonance frequency at which the electromagnetic wave resonates in the cavity. The tuning element comprises one or more movable micro-electromechanical elements with an associated actuation element located in their vicinity for actuating each of them between an up state and a down state. The movable micro-electromechanical elements at least partially have a conductive surface and are mounted within the cavity.
    Type: Application
    Filed: May 4, 2007
    Publication date: November 8, 2007
    Applicant: Interuniversitair Microelektronica Centrum (IMEC) VZW
    Inventors: Hendrikus Tilmans, Ilja Ocket, Walter De Raedt
  • Publication number: 20070254608
    Abstract: One inventive aspect relates to a system and method for performing communication between a transmitting device and a receiving device along a communication path. The transmit device and the receive device each have at least one antenna. At least one of the devices has a plurality of antennas. The method comprises determining first information about the communication path. The method further comprises determining second information about the desired performance parameters of the communication. The method further comprises selecting based on the first and second information a mode of communication from a predetermined set of communication modes. The set includes a Single Input Single Output (SISO) and at least one Multiple Input Multiple Output (MIMO) communication scheme. The method further comprises performing communication in accordance with the selected mode.
    Type: Application
    Filed: March 20, 2007
    Publication date: November 1, 2007
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventor: Bruno Bougard
  • Patent number: 7285674
    Abstract: The present invention provides a silane molecule which combines pre-activated and protein-resistant functionalities in one molecule; the molecule has a general formula: A-(CH2)n—(O[CH2]t)m—(CH2)v—Y ??(1) wherein A is a functional group for binding to a substrate and Y is a functional group for binding to biomolecules. The invention furthermore provides a method for the synthesis of such a silane molecule and a method for depositing a monolayer of such silane molecules onto a substrate. Such a monolayer of silane molecules may be used in biosensors, DNA/protein micro-arrays or other sensor applications. For further lowering the protein binding to the surface of the biosensor, the monolayer may furthermore comprise second silane molecules with formula: B—(CH2)o—(OCH2CH2)r—Z.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: October 23, 2007
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Randy De Palma, Wim Laureyn, Karolien Jans
  • Publication number: 20070245273
    Abstract: A system and method of designing digital system. One aspect of the invention includes a method for designing an essentially digital system, wherein Pareto-based task concurrency optimization is performed. The method uses a system-level description of the functionality and timing of the digital system. The system-level description comprises a plurality of tasks. Task concurrency optimization is performed on said system-level description, thereby obtaining a task concurrency optimized system-level description, including Pareto-like task optimization information. The essentially digital system is designed based on said task concurrency optimized system-level description. In one embodiment of the invention, the description is includes a “grey-box” description of the essentially digital system.
    Type: Application
    Filed: June 11, 2007
    Publication date: October 18, 2007
    Applicant: Interuniversitair Microelektronica Centrum
    Inventors: Francky Catthoor, Peng Yang, Chun Wong, Paul Marchal, Aggeliki Prayati, Nathalie Cossement, Rudy Lauwereins
  • Publication number: 20070238315
    Abstract: Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 ?mol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 ?mol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.
    Type: Application
    Filed: March 23, 2007
    Publication date: October 11, 2007
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Kai Cheng, Maarten Leys, Stefan Degroote
  • Publication number: 20070235753
    Abstract: An organic photo-detecting field-effect device is presented, the device comprising a first layer comprising an organic semi-conducting material, the first layer acting as an accumulation layer and as a charge transport layer for a first type of charge carriers, and a second layer comprising a second material, the second layer acting as a an accumulation layer for a second type of charge carriers. Charges collected in the second layer influence the charge transport in the first layer. The second material may be an organic semi-conducting material or a metal. At the interface between the first layer and the second layer a heterojunction is formed in the case of an organic semi-conducting second material, and a Schottky barrier is formed in the case of a metal second material, giving rise to an efficient exciton splitting. Different geometries and operation modes facilitating the removal of the collected photo-generated charge carriers during the reset period of the device are presented.
    Type: Application
    Filed: March 29, 2007
    Publication date: October 11, 2007
    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
    Inventors: Maarten Debucquoy, Stijn Verlaak, Paul Heremans
  • Publication number: 20070238294
    Abstract: The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.
    Type: Application
    Filed: April 10, 2007
    Publication date: October 11, 2007
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Gerald Beyer, Sywert Brongersma
  • Publication number: 20070215951
    Abstract: The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide.
    Type: Application
    Filed: May 18, 2007
    Publication date: September 20, 2007
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: Tom Schram, Jacob Hooker, Marcus Henricus van Dal
  • Publication number: 20070220523
    Abstract: A method for operating a terminal having at least one resource and executing at least one application in real-time, wherein the execution of the application requires execution of at least two tasks, comprises selecting operating points for each of the tasks from a predetermined set without knowing all implementation details. The method further comprises determining at least one implementation parameter for the selected quality-resource utilization operating point, wherein the determining is performed for each of the tasks, and wherein the determined implementation parameter is different than the quality and resource utilization, and executing the tasks with their determined implementation parameter.
    Type: Application
    Filed: March 20, 2007
    Publication date: September 20, 2007
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Koninklijke Philips Electronic N.V.
    Inventors: Gauthier LaFruit, Elisabeth Steffens, Reinder Bril
  • Patent number: 7259228
    Abstract: A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerization to obtain soluble precursor polymers. The precursor polymer such obtained comprises structural units of the formula (II). In a next step, the precursor polymer (II) is subjected to a conversion reaction towards a soluble or insoluble conjugated polymer by thermal treatment. The arylene or heteroarylene polymer comprises structural units of the formula III. In this process the dithiocarbamate group acts as a leaving group and permits the formation of a precursor polymer of structural formula (II), which has an average molecular weight from 5000 to 1000000 Dalton and is soluble in common organic solvents.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: August 21, 2007
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), Limburgs Universitair Centrum
    Inventors: Dirk Vanderzande, Laurence Lutsen, Anja Henckens, Kristof Colladet
  • Publication number: 20070182012
    Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.
    Type: Application
    Filed: April 16, 2007
    Publication date: August 9, 2007
    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
    Inventors: Walter DeRaedt, Steven Brebels, Steven Sanders, Tom Torfs, Eric Beyne
  • Patent number: 7251398
    Abstract: A method for providing an optical interface with at least one optical coupling structure for a packaged optical device is described. The at least one optical coupling structure may be, for example, wave-guides and/or microlenses. The packaged optical device includes an external alignment structure. The external alignment structure has a support means with at least one hole and at least one alignment feature. The method includes providing optical encapsulate material in the hole of the support means. Optical coupling structures, such as wave-guides or microlenses, may be provided into the encapsulation at a well-defined position relative to the at least one alignment feature of the external alignment structure. By providing the optical coupling structures directly in the material comprised in the encapsulation, a high degree of alignment accuracy is obtained.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: July 31, 2007
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Roeland Baets, Ronny Bockstaele, Kris Naessens, Olivier Rits
  • Patent number: 7240428
    Abstract: A method for producing probes for atomic force microscopy comprises producing, on a surface of one side of a semiconductor substrate, one or more moulds for the production of one or more probe tips. One or more probe configurations and at least one set of a probe tip and a cantilever are also produced on the side of the substrate, wherein each configuration comprises a contact region for attachment of a holder. The surface area of each contact region is smaller in size than the surface area of the holder. The method further includes attaching one or more holders to the contact region(s), and releasing the probe configuration and the holder from the substrate by under-etching the probe configuration from the side of the substrate on which the probe configuration is produced.
    Type: Grant
    Filed: December 16, 2004
    Date of Patent: July 10, 2007
    Assignee: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventor: Marc Fouchier
  • Publication number: 20070152170
    Abstract: A method is provided for characterising an immersion lithography process of a device using an immersion liquid. In order to study pre-soak and post-soak effects on the image performance of an immersion lithography process, the method includes determining at least one image performance characteristic as function of contact times between the immersion liquid and the device for a device illuminated in a dry lithography process and contacted with said immersion liquid prior and/or after said illumination. Based on the image performance characteristic, a lithography process characteristic is derived for the immersion lithography process.
    Type: Application
    Filed: December 29, 2005
    Publication date: July 5, 2007
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventor: Ivan Pollentier
  • Patent number: 7238291
    Abstract: This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: July 3, 2007
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Bart Onsia, Ivo Teerlinck
  • Patent number: 7235281
    Abstract: A method is described for closing openings in a film, for example, in microelectronic process technology, whereby substantially no deposition material passes through the openings, which can be important if fragile micro devices are positioned under the openings. The closure of these openings can cause an underlying cavity to be hermetically sealed, in which an object can be located. In particular the method provides a way for hermetically sealing cavities under controlled atmosphere and pressure in the encapsulation and sealing processes of cavities comprising fragile content. The cavities may comprise for example Micro Electro Mechanical Systems (MEMS).
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: June 26, 2007
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Cristina Rusu, Ann Witvrouw
  • Publication number: 20070138909
    Abstract: A piezoelectric bimorph cantilever is used for determining physical parameters in a gaseous or liquid environment. The sensor works as a driven and damped oscillator. Contrary to common cantilever sensor systems, the piezoelectric film of the bimorph cantilever acts as both a sensor and an actuator. Using at least two resonance mode of the bimorph cantilever, at least two physical parameters can be measured simultaneously in a gas or a liquid. An optimized piezoelectric cantilever and a method to produce the cantilever are also described.
    Type: Application
    Filed: December 14, 2006
    Publication date: June 21, 2007
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), UNIVERSITEIT HASSELT
    Inventors: Vincent Mortet, Rainer Petersen
  • Patent number: 7234126
    Abstract: A system and method of designing digital system. One aspect of the invention includes a method for designing an essentially digital system, wherein Pareto-based task concurrency optimization is performed. The method uses a system-level description of the functionality and timing of the digital system. The system-level description comprises a plurality of tasks. Task concurrency optimization is performed on said system-level description, thereby obtaining a task concurrency optimized system-level description, including Pareto-like task optimization information. The essentially digital system is designed based on said task concurrency optimized system-level description. In one embodiment of the invention, the description is includes a “grey-box” description of the essentially digital system.
    Type: Grant
    Filed: August 22, 2001
    Date of Patent: June 19, 2007
    Assignees: Interuniversitair Microelektronica Centrum, Katholieke Universiteit Leuven, Patras, University of
    Inventors: Francky Catthoor, Peng Yang, Chun Wong, Paul Marchal, Aggeliki Prayati, Nathalie Cossement, Rudy Lauwereins
  • Patent number: 7232722
    Abstract: The present invention relates to a method of making a multibit non-volatile memory and especially to a method of making a flash memory such as a fast-programmable Flash EEPROM (Electrically Erasable Programmable Read-Only Memory) device relying on hot-electron injection for programming which is particularly suited for high density low-voltage low-power applications and employs only two polysilicon layers.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: June 19, 2007
    Assignees: Interuniversitair Microelektronica Centrum vzw, Infineon AG
    Inventors: Jan Van Houdt, Luc Haspeslagh