Abstract: Embodiments of the invention provide a gallium nitride-based light emitting diode including a transparent electrode, which includes a metal layer and a metal oxide layer. The light emitting diode includes a substrate, an n-type gallium nitride-based semiconductor layer disposed on the substrate, a p-type gallium nitride-based semiconductor layer disposed on the n-type gallium nitride-based semiconductor layer, an active layer interposed between the n-type gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, and a transparent electrode disposed on the p-type gallium nitride-based semiconductor layer. Here, the transparent electrode has a multilayer structure including a first metal layer and a metal oxide layer sequentially stacked one above another, and impedance of the metal oxide layer matches impedance of an external environment at an interface between the metal oxide layer and the external environment.

Abstract: A solid state lighting apparatus according to some embodiments includes a circuit including a plurality of light emitting devices, and a configurable shunt configured to bypass at least some current around at least one light emitting device of the plurality of light emitting devices. The configurable shunt may include, for example, a tunable resistor, a fuse, a switch, a thermistor, and/or a variable resistor.

Abstract: The present invention relates to a laboratory centrifuge having a cooling device which comprises a compressor enclosed by a compressor housing, with the compressor housing, in the region of the compressor head, being at least regionally provided with a damping material which is capable of absorbing vibrations in the range from 20 Hz to 100 Hz.

Abstract: An optical semiconductor lighting apparatus including a housing with a first end portion and a second end portion that is open, a light source module disposed in the housing, a fan disposed adjacent to the light source module in the housing, the fan rotating in a first direction to blow air toward the light source module, and a reflector disposed adjacent to the second end portion of the housing, the reflector enhancing an illumination scope. A moving path, in which at least a portion of the air drawn into the housing by the fan externally flows through the light source module, is formed in the housing.

Abstract: The present invention relates to a nitride-semiconductor light-emitting element in which a p-type nitride layer is doped with carbon, and to a production method therefor. More specifically, the present invention relates to a nitride-semiconductor light-emitting element comprising a p-type nitride layer formed from a nitride having a high concentration of free holes as the carbon is auto-doped in accordance with adjustment of the rate of flow of a nitrogen source. The nitride-semiconductor light-emitting element of the present invention can provide a high free-hole concentration, which is difficult to achieve with conventional single p-type dopants, and can therefore lower the resistance and increase the light efficiency of the light-emitting element.

Abstract: A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.

Abstract: An extended length flexible LED light strip system for extending the length of a flexible LED light strip. The extended length flexible LED light strip system generally includes a protective covering having a passage, a light strip extending within the passage of the protective covering, a first power bus and a second power bus within the protective covering, and a plurality of connectors electrically connecting the light strip to the power buses at selected lengths. A power coupler is provided that includes a pair of prongs that extend into the protective covering and electrically contact the power buses to provide DC power to the power buses.

Abstract: A colour tunable lighting module is described which includes at least three solid state lighting emitters (such as light emitting diodes) and at least two wavelength converting elements (such as phosphors). The three solid state lighting emitters are formed of the same semiconductor material system and the light generated by them has dominant wavelengths in the blue-green-orange range of the optical spectrum. The two wavelengths converters are used re-emit some of the light from two of the emitters in broader spectra having longer dominant wavelengths, while the third emitter is selected to emit light at a wavelength between the dominant wavelengths of the light from the two emitters and the two converters. A control system may be employed to monitor and control the module and the lighting module can be optimised for tunable high colour quality white light applications.

Abstract: A light-emitting diode (LED) lighting apparatus is provided. The LED lighting apparatus includes at least one LED, and a wavelength conversion member spaced apart from the LED and configured to convert a wavelength of light emitted from the LED. The wavelength conversion member includes a light-transmitting member, and a transfer molded wavelength conversion layer disposed on at least one surface of the light-transmitting member. The transfer molded wavelength conversion layer includes a resin and a phosphor.

Abstract: An optical semiconductor lighting apparatus including: a substrate in which a single LED chip or a plurality of LED chips are disposed; a first mold portion disposed on the substrate to cover the plurality of LED chips; and a second mold portion extending from an edge of the first mold portion and disposed on the substrate. The respective LED chips can improve adhesive strength with respect to the substrate through the first and second mold portions. Peeling, surface cracking and damage caused by moisture permeation can be prevented by the first and second mold portions. A fluorescent material included in the second mold portion can improve a wavelength conversion rate.

Abstract: A lighting system adapted for being retrofit into a conventional lighting fixture, or adapted to replace the conventional fixture. The lighting system includes a lighting device having a substrate and a plurality of light-emitting elements disposed on the substrate. The lighting system further includes a power supply for delivering D/C current to the lighting device. The lighting device may be installed into a conventional lighting socket in the conventional lighting fixture or mounted independently utilizing some parts of the conventional fixture. The power supply is installed into the conventional lighting fixture or other suitable fixture external to the lighting device. In exemplary embodiments, the lighting system includes a plurality of lighting devices rotatably mounted in the conventional lighting fixture. Each lighting device is powered by an independent power supply and may be independently rotated and powered to customize light coverage.

Abstract: A lighting fixture comprising an optimized linear module lighting device and a plurality of parabolic fins. The optimized linear module lighting device comprises a substrate comprising at least first, second, and third portions. The optimized linear module lighting device further comprises a plurality of light-emitting elements. A first set of the light-emitting elements are disposed on the first portion of the substrate; a second set of the light-emitting elements are disposed on the second portion of the substrate; and a third set of the light-emitting elements are disposed on the third portion of the substrate. The second set of light-emitting elements is disposed above at least one of the parabolic fins and is less dense than the first and third sets of light-emitting elements.

Abstract: An optical semiconductor lighting apparatus includes a light emitting module including a semiconductor optical device, a housing to house the light emitting module, a first sealing body connected to a groove recessed in a polygonal or closed-curve shape of the housing, a first optical cover covering an outer edge of the groove and a top surface of the housing, a first rib formed on a top surface of the first sealing body along a forming direction of the first sealing body, and a pair of second ribs formed in parallel along both edges of a bottom surface of the first sealing body.

Abstract: A light emitting diode (LED) and a method for manufacturing the same is disclosed. The disclosed LED comprises a first substrate, an epitaxy layer, and a plurality of bumps. The first substrate is doped with YAG: Ce and is for converting a first light with a first range of wavelength to a second light with a second range of wavelength. The epitaxy layer is disposed on the first substrate and is for emitting the first light. The plurality of bumps are disposed on the epitaxy layer. With the first substrate doped with YAG: Ce, the disclosed LED does not need additional phosphor to convert the first light with the first range of wavelength to the second light with the second range of wavelength.