Abstract: A solid state lamp with efficient heat sink arrangement. To provide adequate cooling utilizing a defined form factor, such as that of the A-lamp incandescent bulb, the interior volume is used more efficiently. As one example, a solid state lamp employs a heat sink with inward facing fins. Solid state light sources, such as light emitting diodes (LEDs), are mounted on the exterior of the heat sink. An air path for convective flow is established through the center of the lamp.

Abstract: A lamp comprising a solid state light emitter, the lamp being an A lamp and providing a wall plug efficiency of at least 90 lumens per watt. Also, a lamp comprising a solid state light emitter and a power supply, the emitter being mounted on a heat dissipation element, the dissipation element being spaced from the power supply. Also, a lamp, comprising a solid state light emitter and a heat dissipation element that has a heat dissipation chamber, whereby an ambient medium can enter the chamber, pass through the chamber, and exit. Also, a lamp, comprising a light emissive housing at least one solid state lighting emitter and a first heat dissipation element. Also, a lamp comprising a heat sink comprising a heat dissipation chamber. Also, a lamp comprising first and second heat dissipation elements. Also, a lamp comprising means for creating flow of ambient fluid.

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

Abstract: A hybrid chip-on-heatsink device comprises at least one LED die, at least one printed circuit board (PCB), and a thermally conductive substrate or heatsink. The LED die is physically and thermally coupled to the thermally conductive substrate. The PCB is physically coupled to the thermally conductive substrate. The LED die is electrically coupled to the PCB. The thermally conductive substrate acts as a spreader and as a heatsink, whereby heat is efficiently dissipated away from the LED die. The PCB may optionally contain other electrical components, and circuitry to create a “smart” LED package or light engine.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract: A heat sink for use with a high output LED light source is disclosed. The heat sink is used with an LED and conical reflector. The heat sink has a cylindrical back end holding the light emitting diode. The heat sink includes a conically shaped wall having an inner and outer surface and an open front end. The open front end has a rim with notches. The reflector has a front flat surface with arms which are fixed in the notches with a fastener. The heat sink includes a plurality of slits formed on the inner and outer surfaces extending between the back and front ends. A plurality of vanes extend radially from the inner surface. The heat sink is fabricated from a thermally conductive material. The conical shape of the heat sink, the slits and vanes increases exposed surface area to assist in dissipating heat generated from the LED.

Abstract: Provided is an apparatus for controlling lighting brightness including a light control unit that generates a control signal for controlling the brightness of a plurality of lightings; a digital signal generating unit that converts a signal corresponding to the control signal at each period so as to generate non-periodic digital signals; and a driving voltage generating unit that generate driving voltages by converting the digital signals into analog signals.

Abstract: A lighting device comprising a first element that comprises an electrical connector, a second element that comprises at least a first light source, and a position-retaining element (or means) that holds the second element in any of at least two positions relative to the first element. Also, a lighting device comprising a first element that comprises an electrical connector, a second element that comprises at least a first trim element, and a position-retaining element (or means) that holds the second element in any of at least two positions relative to the first element. The electrical connector is electrically connected to at least a first light source, and the second element is movable relative to the first element among the positions while maintaining electrical connection between the electrical connector and at least the first light source.

Abstract: A lighting device comprising a trim element, an electrical connector and at least one solid state light emitter, the lighting device weighing less than one kilogram. If current of about 12 watts (or in some cases about 15 watts, or in some cases not more than about 15 watts) is supplied to the electrical connector, the at least one solid state light emitter will illuminate so that the lighting device will emit white light of at least 500 lumens. Also, a lighting device that weighs less than one kilogram and can generate white light of at least 500 lumens using a current of not more than about 15 watts. Also, a lighting device for mounting in a recessed housing, comprising a unitary structure trim element that conducts heat away from at least one solid state light emitter and dissipates at least some of the heat outside of the recessed housing.

Abstract: A lighting device comprising at least a first light source and at least one heat sink element that is removable, that comprises an first inner region and an first outer region, that is identical in shape to another heat sink element, that is in thermal contact with a trim element, that is stacked, that is in thermal contact with at least a first portion of a first surface of the trim element, that has a cross-sectional area at a first distance from an axis of a trim element that is larger than at a shorter distance, and/or that maintains a junction temperature of a lighting device at or below a recommended junction temperature. Also, a lighting device comprising at least a first light source, a trim element, a driver sub-assembly and a spacer element positioned between the trim element and the driver sub-assembly. Also, methods of dissipating heat.

Abstract: A light engine housing comprising a mixing chamber element, a driver chamber element and/or a connection element, one or more of which is removable. A light engine comprising (1) a light engine housing and (2) a mixing chamber module and/or a driver module removably attached to and/or positioned in the light engine housing. Also, a light engine comprising (1) a light engine housing and a mixing chamber module and/or a driver module. Also, a solid state light engine comprising a light engine housing comprising at least a first connection element.

Abstract: A light engine housing comprising a mixing chamber element, a driver chamber element and/or a connection element, one or more of which is removable. A light engine comprising (1) a light engine housing and (2) a mixing chamber module and/or a driver module removably attached to and/or positioned in the light engine housing. Also, a light engine comprising (1) a light engine housing and a mixing chamber module and/or a driver module. Also, a solid state light engine comprising a light engine housing comprising at least a first connection element.

Abstract: There is provided a backlight unit including: a chassis having an insulating layer formed on a top thereof; a circuit pattern formed on the insulating layer; a plurality of light emitting diodes formed on the insulating layer to electrically connect to the circuit pattern.

Abstract: A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.

Abstract: Solid state lighting devices and illumination methods involve use of multiple solid state emitters of different colored outputs (optionally including at least one white or near-white emitter). Operation of the solid state emitters is controlled with at least one circuit element to emphasize and/or deemphasize perception of at least one color of a target surface based upon a reflectance spectral distribution of the target surface. At least one emitter may have an associated passive or active filter; the filterable emitter and/or active filter may be operated to deemphasize perception of at least one color of a target surface. Activation and/or alteration of emphasis or deemphasis of perception of color of a target surface may be selected by a user or automatically controlled.

Abstract: Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.

Abstract: The present invention relates to phosphor blend for wavelength conversion and a white light emitting device using the same. The phosphor blend of the invention comprises three phosphors, A5(PO4)3Cl:Eu2+, D2SiO4:Eu and MS:Eu at a composition where near ultraviolet radiation is converted into light positioned at a CIE coordinate (x, y), where 0.25?x?0.45 and 0.25?y?0.43, wherein A comprises at least one of Sr, Ca, Ba, and Mg, D comprises at least one of Ba, Sr, and Ca, and M comprises at least one of Sr and Ca. Furthermore, the present invention provides a new white light emitting device in combination of the phosphor blend and a near ultraviolet LED.

Abstract: A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.

Abstract: Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules.