Patents Assigned to LEDs ON
  • Backlight unit
    Patent number: 7905617
    Abstract: Provided is a backlight unit including a plurality of light guide plates that each include a first side surface having a housing groove, an upper surface extending from an edge of the first side surface, a flat lower surface facing the upper surface, and a second side surface facing the first side surface of an adjacent light guide plate, and are disposed in parallel; a plurality of light source units that are disposed in the housing grooves of the respective light guide plates; and a bottom case that houses the light guide plates and the light source units.
    Type: Grant
    Filed: November 18, 2008
    Date of Patent: March 15, 2011
    Assignee: Samsung LED. Co., Ltd.
    Inventors: Mi Jeong Yun, Young Taek Kim, Onishi Tomohisa, Jong Jin Park, Geun Young Kim
  • Vertical type nitride semiconductor light emitting device and method of manufacturing the same
    Patent number: 7906785
    Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
    Type: Grant
    Filed: October 24, 2006
    Date of Patent: March 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Doo Go Baik, Bang Won Oh, Tae Jun Kim
  • Nitride semiconductor light emitting device
    Patent number: 7902544
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: March 8, 2011
    Assignee: Samsung LED Co., Ltd
    Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • LIGHTING DEVICE WITH HEAT DISSIPATION ELEMENTS
    Publication number: 20110050070
    Abstract: A lighting device comprising at least a first light emitter, at least a first heat transfer element, and a plurality of heat dissipation elements. Each heat dissipation element has at least a first region and a second region, the first region being in contact with the first heat transfer element, the second region being closer to the first light emitter than the first region. The first light emitter is thermally coupled to the first heat transfer element.
    Type: Application
    Filed: September 1, 2009
    Publication date: March 3, 2011
    Applicant: Cree LED Lighting Solutions, Inc.
    Inventor: PAUL KENNETH PICKARD
  • VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110053298
    Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
    Type: Application
    Filed: October 21, 2010
    Publication date: March 3, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
  • Side light emitting type semiconductor laser diode having dielectric layer formed on active layer
    Patent number: 7899103
    Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: March 1, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Han-youl Ryu, Kyoung-ho Ha
  • METHOD OF FORMING PHOSPHOR FILM AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE INCORPORATING THE SAME
    Publication number: 20110043100
    Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.
    Type: Application
    Filed: October 28, 2010
    Publication date: February 24, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Hai Sung LEE, Jong Myeon Lee, Ho Sung Choo, Myung Whun Chang, Youn Gon Park
  • Nitride based semiconductor light-emitting device
    Patent number: 7893443
    Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: February 22, 2011
    Assignee: Samsung LED Co,; Ltd.
    Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
  • Nitride-based semiconductor light emitting diode
    Patent number: 7893447
    Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: February 22, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Hyuk Min Lee, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin
  • Plane light source and LCD backlight unit having the same
    Patent number: 7894017
    Abstract: There are provided a plane light source and an LCD backlight unit having the same.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: February 22, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Seong Yeon Han, Hun Joo Hahm, Hyung Suk Kim, Young June Jeong, Young Sam Park, Chul Hee Yoo
  • HIGH EFFICIENCY LIGHTING DEVICE INCLUDING ONE OR MORE SATURATED LIGHT EMITTERS, AND METHOD OF LIGHTING
    Publication number: 20110037409
    Abstract: A solid state lighting device comprising at least one first light emitter that emits non-saturated non-white light of a first color point, at least one second light emitter that emits saturated non-white light, and a controller configured to control a ratio of light emitted by the first emitter(s) and by the second light emitter(s) to provide non-white light of a second color point. Also, a solid state lighting device comprising at least one first light emitter that emits light within a first area or a second area on a Chromaticity Diagram, and at least one second light emitter, wherein output light is non-white and has a second color point. Also, methods of providing non-white light.
    Type: Application
    Filed: August 14, 2009
    Publication date: February 17, 2011
    Applicant: Cree LED Lighting Solutions, Inc.
    Inventors: Antony Paul VAN DE VEN, Gerald H. Negley
  • NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20110037086
    Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.
    Type: Application
    Filed: October 25, 2010
    Publication date: February 17, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Je Won KIM, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
  • Direct-type backlight unit having surface light source
    Patent number: 7887225
    Abstract: In a direct-type backlight unit, a board has upper and lower surfaces defining a thickness therebetween. A plurality of unit light sources are disposed on the board. Here, in each of the unit light sources, a wiring pattern is formed on the board. A light emitting device is disposed on the wiring pattern to electrically connect thereto. A non-conductive side wall surrounds, without interruption, the light emitting device at a predetermined interval therefrom, the non-conductive side wall having a height lower than that of the light emitting device. Also, an encapsulant is formed in a dome shape inside the side wall. In this fashion, the light emitting devices are mounted on the board by a chip-on-board technique.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: February 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Won Joon Lee, In Tae Yeo, Hun Joo Hahm, Young Sam Park, Kyung Taeg Han, Ho Sik Ahn, Chang Ho Song
  • Light emitting package and light emitting package array
    Patent number: 7888689
    Abstract: Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: February 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Hyung-kun Kim, Yu-sik Kim
  • Nitride semiconductor light emitting device
    Patent number: 7888670
    Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: February 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
  • VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110033965
    Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
    Type: Application
    Filed: October 21, 2010
    Publication date: February 10, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
  • LIGHTING DEVICE HAVING FIRST, SECOND AND THIRD GROUPS OF SOLID STATE LIGHT EMITTERS, AND LIGHTING ARRANGEMENT
    Publication number: 20110031894
    Abstract: A lighting device comprising first, second and third groups of solid state light emitters, the first group emitting light having a dominant wavelength of 430 to 490 nm, the second group at 525 to 575 (in some devices 540 to 575 nm), the third group at 610 to 640 nm. In some devices, wavelength of light from emitters in first and second groups, and light from second and third groups, differs by at least 70 nm. Some devices emit light having CRI Ra of at least 70 when first, second and third groups of emitters are illuminated. Also, a lighting arrangement comprising first, second and third groups as above, in addition to a fourth emitter emitting light of dominant wavelength outside the ranges for the first, second and third groups, and not more than 10 nm different from a dominant wavelength of a color on an item to be illuminated.
    Type: Application
    Filed: August 4, 2009
    Publication date: February 10, 2011
    Applicant: Cree LED Lighting Solutions, Inc.
    Inventor: Antony Paul VAN DE VEN
  • COMPOSITE PHOSPHOR POWDER, LIGHT EMITTING DEVICE USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE PHOSHPOR POWDER
    Publication number: 20110031521
    Abstract: The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together.
    Type: Application
    Filed: October 21, 2010
    Publication date: February 10, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Chulsoo YOON, Joon Ho Yoon, Chang Hoon Kwak, Yun Seup Chung
  • Light emitting device, method of manufacturing the same and monolithic light emitting diode array
    Patent number: 7884377
    Abstract: A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: February 8, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Grigory Onushkin, Jin Hyun Lee, Myong Soo Cho, Pun Jae Choi
  • Light emitting diode device
    Patent number: D633876
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: March 8, 2011
    Assignee: Semi LEDs Optoelectronics Co., Ltd.
    Inventors: Li-Wei Shan, Wen-Huang Liu