Abstract: A fuse module including a mounting block formed of an electrically insulating material, the mounting block including a base portion and a wall portion disposed in a perpendicular relationship, the fuse module further including a fuse plate including an electrically conductive bus bar disposed on a bottom of the base portion, a fusible element electrically connected to the bus bar and disposed adjacent a front of the wall portion, and a fuse terminal electrically connected to the fusible element and disposed on a top of the base portion, the fuse module further including an electrically conductive terminal post extending from the top of the base portion and through the fuse terminal for facilitating connection to an electrical component.

Abstract: Exemplary embodiments of the present disclosure of a fuse may include a fuse body having a first portion and a second portion. The first and second portions may be configured to mate together thereby forming an internal cavity. A first inner termination and a second inner termination may be at least partially attachable to the first and second portions of the fuse body at respective first and second ends. A fusible element may be disposed in the cavity of the fuse body and extendable from the first inner termination at the first end of the fuse body to the second inner termination at the second end of the fuse body. The fusible element may be attachable to the first inner termination at a first connection and the second inner termination at a second connection. The first and second connections may be inspectable when the fuse is in an assembled state.

Abstract: A semiconductor device structure may include a semiconductor device, disposed at least in part in a semiconductor substrate, and a first insulator layer, disposed on a surface of the semiconductor device, and comprising a first contact aperture, disposed within the first insulator layer. The semiconductor device structure may also include a first contact layer, comprising a first electrically conductive material, disposed over the insulator layer, and being in electrical contact with the semiconductor device through the first contact aperture, and a second insulator layer, disposed over the first contact layer, wherein the second insulator layer further includes a second contact aperture, displaced laterally from the first contact aperture, by a first distance.

Abstract: An optical rain sensor for detecting rainfall on a transparent substrate, the optical rain sensor including a housing disposed on a surface of the transparent substrate, a plurality of photo elements disposed within the housing, each photo element capable of being selectively activated to emit light and deactivated to receive light, and a controller operatively connected to the plurality of photo elements and configured to alternatingly drive the plurality of photo elements between a first mode of operation and a second mode of operation, wherein, in the first mode of operation, at least a first photo element is activated and at least a second photo element is deactivated and, in the second mode of operation, at least the second photo element is activated and at least the first photo element is deactivated.

Abstract: A vertical surface mount device pass-through fuse including an electrically insulating fuse body, a fusible element disposed on a first side of the fuse body and extending between first and second terminals, an electrically insulating cap having a domed portion and a flanged portion extending from the domed portion, the domed portion disposed over the fusible element, and the flanged portion affixed to the fuse body, and a conductive lead frame having a bow portion and an elongate shank portion extending from the bow portion, wherein the bow portion is disposed on the cap and is connected to the first terminal, and wherein the shank portion extends away from the fuse body.

Abstract: A semiconductor device substrate assembly may include a first substrate, comprising: a first insulator plate; and a first patterned metal layer, disposed on the first insulator plate, wherein the first insulator plate comprises a first material and a first thickness. The assembly may include a second substrate, comprising: a second insulator plate; and a second patterned metal layer, disposed on the second insulator plate, wherein the second insulator plate comprises the first material and the first thickness. The assembly may also include a third substrate, disposed between the first substrate and the second substrate, comprising: a third insulator plate; and a third patterned metal layer, disposed on the third insulator plate, wherein the third insulator plate comprises a second material and a second thickness, wherein at least one of the second material and the second thickness differs from the first material and the first thickness, respectively.

Abstract: A fuse module including a mounting block formed of an electrically insulating material, a fuse plate including a fusible element disposed on a bottom surface of the mounting block, a fuse terminal electrically connected to the fusible element and extending along rear and top surfaces of the mounting block, and an input terminal electrically connected to the fusible element and extending from a front surface of the mounting block, the fuse module further including an electrically conductive terminal post extending from the top surface of the mounting block through the fuse terminal for facilitating connection to an electrical component.

Abstract: Embodiments herein are directed to steering position rotary sensors including a housing defining an internal cavity, a center shaft extending through the housing, and a gear coupled to the center shaft, wherein the gear is positioned off-center relative to a central rotational axis extending through the center shaft. The steering position rotary sensor may further include a magnet coupled to the gear, a first Hall effect sensor positioned adjacent the gear and concentric with the magnet, and a second Hall effect sensor positioned adjacent the center shaft and concentric with the central rotational axis, wherein the first Hall effect sensor and the second Hall effect sensor are separated by a magnetic shield.

Abstract: A waveguide system may include an inner core, and a conductor wound around the inner core in conductive coils having a coil length, wherein a voltage pulse received by the pulsed waveguide propagates as an induced wave having a group velocity, the group velocity being below a threshold velocity, wherein a reflection signal or an end of line signal generated within the conductor from the induced wave is detectable from the initial voltage pulse.

Abstract: A self-oscillating spread spectrum frequency control loop contains a gated voltage-controlled oscillator (VCO) which receives a digital signal that can start or stop its oscillation. The VCO generates a spread spectrum carrier by receiving a triangle wave signal from a delaying ramp generator in a loop, its ramp direction controlled by a frequency comparator. The loop generates a spectrum spread as wide as possible above a minimum frequency. RF isolators that utilize low-pass filters in the transmitter and high-pass filters in the receiver, where the F-3 dB cutoff frequencies of both filters vary in a correlated manner, are used to not produce spread spectrum frequencies below the minimum frequency. Die from a given wafer lot, when designed such that the low- and high-pass cutoff frequencies track, can be used to form RF digital isolators whose minimum spread spectrum frequency does not go below the minimum frequency required by that wafer lot.

Abstract: Provided herein are protection devices having U-shaped fuse elements. In some embodiments, a protection device may include a housing defining a cavity, and a fuse element within the cavity. The fuse element may include a first component and a second component separated by a barrier, and wherein the first and second components are joined at a fusible bridge.

Abstract: A fuse module including a mounting block formed of an electrically insulating material, the mounting block including a rear wall extending from a base, a fuse plate including an electrically conductive bus bar disposed on a bottom of the base, a fusible element electrically connected to the bus bar and disposed adjacent a rear of the rear wall, and a fuse terminal electrically connected to the fusible element and extending over a top of the rear wall, along a front of the rear wall, and onto a top of the base, the fuse module further including an electrically conductive terminal post extending from the top of the base through the fuse terminal for facilitating connection to an electrical component.

Abstract: An active/passive fuse module including a base, a busbar disposed on a top surface of the base and including a fuse element and first and second terminal portions extending from opposite ends of the fuse element, the fuse element extending over a cavity in the top surface of the base, a pyrotechnic interrupter (PI) disposed atop the base, the PI including a piston disposed within a shaft above the fuse element, a first pyrotechnic ignitor coupled to a controller, the first pyrotechnic ignitor configured to detonate and force the piston through the fuse element upon receiving an initiation signal from the controller, and a second pyrotechnic ignitor coupled to the busbar by a pair of leads, the second pyrotechnic ignitor configured to detonate and force the piston through the fuse element upon an increase in voltage across the leads.

Abstract: A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.

Abstract: A PPTC assembly may include a PPTC component, having a trip temperature, and further comprising a first temperature coefficient of resistance, in a low temperature range below the trip temperature. The PPTC assembly may include a resistive component, disposed in electrical contact with the PPTC component on a first side of the PPTC component, the resistive component comprising an electrical conductor, and having a second temperature coefficient of resistance in the low temperature range, less than the first temperature coefficient of resistance. The PPTC component may include a first electrode, electrically coupled to the first side of the PPTC component, and a second electrode, electrically coupled to the second side of the PPTC component, where the PPTC component and the resistive component are arranged in electrical series between the first electrode and the second electrode.

Abstract: A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.

Abstract: In one embodiment, a power semiconductor device may include a semiconductor substrate, wherein the semiconductor substrate comprises an active device region and a junction termination region. The power semiconductor device may also include a polysilicon layer, disposed over the semiconductor substrate. The polysilicon layer may include an active device portion, disposed over the active device region, and defining at least one semiconductor device; and a junction termination portion, disposed over the junction termination region, the junction termination portion defining a ring structure.

Abstract: A thermal sensor wire. The thermal sensor wire may include a thermal sensing portion extending along a wire axis of the thermal sensor wire; and a carrier portion, the carrier portion extending along the wire axis, adjacent to the thermal sensing portion, the thermal sensing portion comprising a polymer positive temperature coefficient (PPTC) material or a negative temperature coefficient (NTC) material.

Abstract: A power semiconductor device may include a junction termination region, bounded by a side edge of a semiconductor substrate. The junction termination region may include a substrate layer of a first dopant type, a well layer of a second dopant type, a conductive trench assembly having a first set of conductive trenches, in the junction termination region, and extending from above the substrate layer through the well layer; and a metal layer, electrically connecting the conductive trench assembly to the well layer. The metal layer may include a set of inner metal contacts, electrically connecting a set of inner regions of the well layer to a first set of trenches of the conductive trench assembly; and an outer metal contact, electrically connecting an outer region of the well layer to a second set of conductive trenches of the conductive trench assembly, wherein the outer region borders the side edge.

Abstract: Provided herein is an improved a bi-stable actuator including a first core component coupleable to a housing, the first core component including a central bore containing a shaft and a shaft spring. The actuator may further include a second core component extending around the first core component, wherein the second core component and the first core component are axially moveable relative to one another, and a third core component extending within the second core component, wherein the third core component and the second core component are axially moveable relative to one another. The actuator may further include a positioning sphere extending through an opening of the first core component, wherein the positioning sphere abuts the second core component when the bi-stable actuator is in a first position, and wherein the positioning sphere abuts a detent of the shaft when the bi-stable actuator is in a second position.