Abstract: A semiconductor device substrate assembly may include a first substrate, comprising: a first insulator plate; and a first patterned metal layer, disposed on the first insulator plate, wherein the first insulator plate comprises a first material and a first thickness. The assembly may include a second substrate, comprising: a second insulator plate; and a second patterned metal layer, disposed on the second insulator plate, wherein the second insulator plate comprises the first material and the first thickness. The assembly may also include a third substrate, disposed between the first substrate and the second substrate, comprising: a third insulator plate; and a third patterned metal layer, disposed on the third insulator plate, wherein the third insulator plate comprises a second material and a second thickness, wherein at least one of the second material and the second thickness differs from the first material and the first thickness, respectively.

Abstract: A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, and electrically conductive first and second leads connected to the first and second electrodes, respectively, wherein the first and second electrodes are formed of a material having a melting point greater than 1100 degrees Celsius.

Abstract: A fuse housing for safe outgassing of a fuse is disclosed. The fuse housing features labyrinth walls disposed at opposing sides of the fuse housing. The labyrinth walls feature serpentine paths for the flow of outgassing material. At an end of the serpentine paths which is farthest away from a fuse element are vent channels. The vent channels are narrower in depth than that of the serpentine paths of the labyrinth walls, facilitating a suctioning effect during outgassing. Conductive material deposits along the serpentine paths so that the fuse maintains a high OSR rating. By directing and controlling the outflow of gases, the fuse housing is able to reduce the temperature of the gases produced. The fuse housing is also able to reduce the physical and observable effects of outgassing.

Abstract: A single bolt fuse assembly and method to connect a single bolt fuse to a circuit or device are disclosed. The single bolt fuse assembly enables the single bolt fuse to be used on any electrical device having a hole suitable for receiving a threaded shaft and connectable to a circuit or device that electrically connects to a female battery or power cable. The apparatus includes a separate high-conductive metal terminal that mates with the stud that mechanically attaches the fuse between the electrical devices. The stud is insulated to avoid becoming part of the electrical circuit and to ensure proper operation of the fuse. By mechanically attaching the stud to the metal terminal, the stud is unlikely to get separated from the fuse.

Abstract: A method to connect power terminals to substrates within semiconductor packages is disclosed. The power terminal connection method minimally adapts the power terminal so that laser treatment can be used to connect the power terminal to the substrate. The power terminal may be adapted in a variety of ways, such that an interface between the power terminal and the substrate may be transformed (melted with consecutive rapid solidification) by the laser device, allowing the power terminal to be connected to the substrate.

Abstract: Provided are trimmed parallel element protection devices. Some protection devices may include a substrate and first and second terminals at opposite ends of the substrate. The protection devices may further include a first fusible and a second fusible element extending between the first and second terminals, wherein at least one of the first and second fusible elements includes a trimmed portion.

Abstract: A novel busbar, suitable for low-power applications, features a u-shaped extension having a male terminal that fits into and establishes electrical connection with a standard female terminal. The housing of an electrical box including the busbar is modified to receive the female terminal in such a way that Ingress Protection ratings of IP67 and IP69K are maintained within the electrical box. The busbar is not riveted to a thicker busbar terminating with a stud and lug nut, as in legacy configurations, thus being simpler and cheaper to manufacture. The female terminal, once connected to the busbar, is removable by inserting a tool into a dedicated opening within the housing.

Abstract: An electrical device assembly and method to attach an isolated single stud fuse assembly to an electrical device are disclosed. The electrical device assembly consists of multiple studs, one or more of which is replaced with the isolated single stud fuse. A conductive copper landing zone receives an electrically isolated steel stud. When the landing pad assembly is orbital riveted into a plastic housing of the electrical device, the stud is locked into the housing permanently. Electrical devices such as disconnect switches and power distribution modules, both of which include multiple studs, are good candidates for being adapted with the single stud fuse assembly.

Abstract: Provided are waveguide sensors and position sensing systems. In some embodiments, a position sensing system may include a waveguide configured to receive and transmit a pulse, and a magnet moveable relative to the waveguide. The waveguide may include a first core layer and a second core layer, a magnetic layer between the first and second core layers, and a conductive winding around the first core layer, the second core layer, and the magnetic layer. The position sensing system may further include a first substrate layer above the conductive winding and a second substrate layer below the conductive winding.

Abstract: A circuit protection device including a PTC device having a PTC element, first and second electrodes disposed on opposing first and second surfaces of the PTC element, respectively, first and second chip fuses disposed on the first and second electrodes, respectively, the second chip fuse electrically connected in series with the PTC device, and the first chip fuse electrically in connected parallel with the PTC device and the second chip fuse, the first chip fuse having a lower electrical resistance than the PTC element when the PTC element is in a non-tripped state, wherein a fusible element of the first chip fuse has a first melting temperature and is configured to carry a current higher than the PTC element can carry without tripping, and wherein a fusible element of the second chip fuse has a second melting temperature that is greater than the first melting temperature.

Abstract: A surface mount device chip fuse including a dielectric substrate, electrically conductive first and second upper terminals disposed on a top surface of the dielectric substrate and defining a gap therebetween, a fusible element formed of solder disposed on the top surface of the dielectric substrate, within the gap, bridging the first and second upper terminals, and electrically conductive first and second lower terminals disposed on a bottom surface of the dielectric substrate and electrically connected to the first and second upper terminals, respectively, wherein a material of the dielectric substrate exhibits a de-wetting characteristic relative to the solder from which the fusible element is formed.

Abstract: An automobile antenna assembly including a housing adapted for installation on a roof of an automobile, the housing having a base portion and a fin portion extending from the base portion, a radio antenna disposed within the fin portion, and a photo radiation intensity sensor disposed within the base portion, the photo radiation intensity sensor including a first light detecting element located on a first side of the fin portion and a second light detecting element located on a second side of the fin portion opposite the first side, wherein at least a portion of the base portion is translucent for allowing light to be received by the first and second light detecting elements, the fin portion providing a light barrier between the first light detecting element and the second light detecting element.

Abstract: A single bolt fuse assembly and method to connect a single bolt fuse to a circuit or device are disclosed. The single bolt fuse assembly enables the single bolt fuse to be used on any electrical device having a hole suitable for receiving a threaded shaft and connectable to a circuit or device that electrically connects to a female battery or power cable. The apparatus includes a separate high-conductive metal terminal that mates with the stud that mechanically attaches the fuse between the electrical devices. The stud is insulated to avoid becoming part of the electrical circuit and to ensure proper operation of the fuse. By mechanically attaching the stud to the metal terminal, the stud is unlikely to get separated from the fuse.

Abstract: A novel heater is disclosed for a temperature sensitive actuator. The heater is a polymeric positive temperature coefficient (PPTC) device consisting of conductive filler and semi-crystalline polymer. The PPTC heater is strategically designed to have a predetermined self-regulation temperature suited to whatever application utilizes the heater. Physical characteristics of the PPTC heater, such as gap width and thickness, enable the current flow through the heater to be strategically controlled.

Abstract: An automobile antenna assembly including a housing adapted for installation on a roof of an automobile, the housing having a base portion and a fin portion extending from the base portion, a radio antenna disposed within the fin portion, and a photo radiation intensity sensor disposed within the base portion, the photo radiation intensity sensor including a first light detecting element located on a first side of the fin portion and a second light detecting element located on a second side of the fin portion opposite the first side, wherein at least a portion of the base portion is translucent for allowing light to be received by the first and second light detecting elements, the fin portion providing a light barrier between the first light detecting element and the second light detecting element.

Abstract: A power semiconductor device may include a junction termination region, bounded by a side edge of a semiconductor substrate. The junction termination region may include a substrate layer of a first dopant type, a well layer of a second dopant type, a conductive trench assembly having a first set of conductive trenches, in the junction termination region, and extending from above the substrate layer through the well layer; and a metal layer, electrically connecting the conductive trench assembly to the well layer. The metal layer may include a set of inner metal contacts, electrically connecting a set of inner regions of the well layer to a first set of trenches of the conductive trench assembly; and an outer metal contact, electrically connecting an outer region of the well layer to a second set of conductive trenches of the conductive trench assembly, wherein the outer region borders the side edge.

Abstract: An ultra-low clamping voltage Surge Protection Module (SPM) is disclosed which utilizes a depletion mode MOSFET (D MOSFET). The SPM may be part of a circuit or a device and includes a primary protection stage and a secondary protection stage, with the D MOSFET being connected between the two stages. The SPM may include a single D MOSFET, dual D MOSFETs, or multiple D MOSFETs and the primary and secondary protection stages may be implemented with a number of different components. The SPM using D MOSFET(s) exhibits improved surge protection over circuits using inductors.

Abstract: A fuse assembly including a fuse connected to two busbars, an injection molded base and an injection molded cover. The busbars are powder-coating with a powder-based adhesive or adhesion promoter, then cured in an oven. The busbars are then placed in the cavity image of an injection molding apparatus. Plastic is heated to a liquid form and injected into the cavity image. The resulting injection molded base is resistant to both dust and water, protecting the fuse inside.

Abstract: A packaged power transistor device includes a Direct-Bonded Copper (“DBC”) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds. A single power transistor realized on a single semiconductor die is attached to the DBC substrate. In one example, a first bond pad of the die is wire bonded to a second lead, and a second bond pad of the die is wire bonded to a third lead. The die, the wire bonds, and the metal layer of the DBC substrate are covered with an amount of plastic encapsulant. Lead trimming is performed to separate the first, second and third leads from the remainder of a leadframe, the result being the packaged power transistor device.

Abstract: An active/passive fuse module including a base, a busbar disposed on a top surface of the base and including a fuse element and first and second terminal portions extending from opposite ends of the fuse element, the fuse element extending over a cavity in the top surface of the base, a pyrotechnic interrupter (PI) disposed atop the base, the PI including a piston disposed within a shaft above the fuse element, a first pyrotechnic ignitor coupled to a controller, the first pyrotechnic ignitor configured to detonate and force the piston through the fuse element upon receiving an initiation signal from the controller, and a second pyrotechnic ignitor coupled to the busbar by a pair of leads, the second pyrotechnic ignitor configured to detonate and force the piston through the fuse element upon an increase in voltage across the leads.