Abstract: A high breaking capacity chip fuse including a bottom insulative layer, a first intermediate insulative layer, a second intermediate insulative layer, and a top insulative layer disposed in a stacked arrangement in the aforementioned order, a fusible element disposed between the first and second intermediate insulative layers and extending between electrically conductive first and second terminals at opposing longitudinal ends of the bottom insulative layer, the first intermediate insulative layer, the second intermediate insulative layer, and the top insulative layer, wherein the first and second intermediate insulative layers are formed of porous ceramic.

Abstract: Circuits for providing overcurrent protection are disclosed herein. The circuits feature depletion mode MOSFETs connected to resistive elements, preferably, Positive Temperature Coefficient (PTC) devices, configured in such a way so that the voltage across the PTC device is the same as the gate-to-source voltage of the MOSFET. The circuit may further be configured using a TVS diode, for clamping the drain-to-source voltage of the MOSFET during the overcurrent events. Heat transfer between the MOSFET and the PTC device facilitates overcurrent protection. A two-terminal device including a depletion mode MOSFET, a PTC device, and a TVS diode may provide overcurrent protection to other circuits. A bidirectional circuit c including two MOSFETS disposed on either side of a PTC is also contemplated for AC voltage overcurrent protection.

Abstract: A method for creating a dielectric thin-film coating for devices having a fusible element is disclosed. The method comprises mixing insoluble and soluble polymers in solid form and exposing the mixture to heat to create a melt mixture. The melt mixture is then dissolved in a solvent to create a slurry which can then be deposited on the device as a thin-film coating to create an interior insulation layer or an external surface.

Abstract: A single bolt fuse assembly and method to connect a single bolt fuse to a circuit or device are disclosed. The single bolt fuse assembly enables the single bolt fuse to be used on any electrical device having a hole suitable for receiving a threaded shaft and connectable to a circuit or device that electrically connects to a female battery or power cable. The apparatus includes a separate high-conductive metal terminal that mates with the stud that mechanically attaches the fuse between the electrical devices. The stud is insulated to avoid becoming part of the electrical circuit and to ensure proper operation of the fuse. By mechanically attaching the stud to the metal terminal, the stud is unlikely to get separated from the fuse.

Abstract: A fuse module including a mounting block formed of an electrically insulating material, the mounting block including a base portion and a wall portion disposed in a perpendicular relationship, the fuse module further including a fuse plate including an electrically conductive bus bar disposed on a bottom of the base portion, a fusible element electrically connected to the bus bar and disposed adjacent a front of the wall portion, and a fuse terminal electrically connected to the fusible element and disposed on a top of the base portion, the fuse module further including an electrically conductive terminal post extending from the top of the base portion and through the fuse terminal for facilitating connection to an electrical component.

Abstract: A fuse assembly including a fuse connected to two busbars, an injection molded base and an injection molded cover. The busbars are powder-coating with a powder-based adhesive or adhesion promoter, then cured in an oven. The busbars are then placed in the cavity image of an injection molding apparatus. Plastic is heated to a liquid form and injected into the cavity image. The resulting injection molded base is resistant to both dust and water, protecting the fuse inside.

Abstract: A fault protection arrangement. The fault protection arrangement may include a neutral grounding resistor including a first non-ground end, connected to a neutralizing point, and a second non-ground end. The fault protection arrangement may include a neutral grounding resistance monitor assembly, directly coupled to the second non-ground end of the neutral grounding resistor. The neutral grounding resistance monitor assembly may include comprising a signal source coupled to the neutralizing-point; a first current sense circuit coupled between the signal source and the neutralizing-point; a first voltage sense circuit coupled between the signal source and the neutralizing-point; a second current sense circuit, comprising a current sensor, coupled between the second non-ground end of the neutral grounding resistor and a protective earth connection.

Abstract: A floating two-terminal unipolar current limiting circuit arrangement implemented with enhancement mode devices and bipolar devices with a unique voltage-current operation curve. This operation curve makes this device particularly advantageous to instrumentation systems that are intended to experience large voltage transients and long-term exposure to voltages that would normally damage measurement equipment. The present current limiting device is designed to have a large impedance value prior to a “turn-on” voltage, then quickly transitions to a low-impedance state. When the conducted current exceeds a setpoint or a high-voltage event occurs, the current limiting device further transitions to the “cutoff” region, which transition resumes the initial high-impedance state. In one embodiment the threshold current may be set with internal components, while a further embodiment allows the current setpoint to be set by external components.

Abstract: Polymeric positive temperature coefficient (PPTC) bodies and fuse devices formed therefrom are described. In various embodiments, the PPTC bodies comprise a matrix polymer and a conductive filler comprising a compound of general formula Mn+1AXn, where M is a transition d metal element, A is a p-block element, X is carbon or nitrogen, and n is 1, 2 or 3.

Abstract: A sub-structure element support system is disclosed. The sub-structure element support system includes a novel molded structure designed to support an electrical element, such as a fuse. The molded structure is a protective and insulative sleeve for the electrical element and reduces forces on the electrical element during free-fall and operation conditions. The molded structure also facilitates automation during manufacturing and reduces cost.

Abstract: A power control switch assembly. The assembly may include a thyristor device, where the thyristor device includes a first device terminal, a second device terminal, and a gate terminal> The assembly may include a negative temperature coefficient (NTC) device, electrically coupled to the gate terminal of the thyristor device on a first end, and electrically coupled to the first device terminal of the thyristor device on a second end, wherein the NTC device is thermally coupled to the thyristor device.

Abstract: A fuse device including a fuse component, a first electrode, disposed on a first side of the fuse component, a second electrode, disposed on a second side of the fuse component, and a phase change component, disposed in thermal contact with the fuse component. The fuse component may comprise a fuse temperature, wherein the phase change component exhibits a phase change temperature, the phase change temperature marking a phase transition of the phase change component, and wherein the phase change temperature is less than the fuse temperature.

Abstract: A sub-structure element support system is disclosed. The sub-structure element support system includes a novel molded structure designed to support an electrical element, such as a fuse. The molded structure is a protective and insulative sleeve for the electrical element and reduces forces on the electrical element during free-fall and operation conditions. The molded structure also facilitates automation during manufacturing and reduces cost.

Abstract: Aspects of the present disclosure include one or more power semiconductor device modules. A power semiconductor module can include: a power terminal, a housing, a heatsink and a protrusion, wherein the housing includes a first tab, and a first protrusion, and wherein the first tab contacts the substrate, and the first protrusion contacts the heatsink.

Abstract: A semiconductor die having a metal tab connected thereto. The metal tab includes at least one slot on at least one side of the metal tab, wherein the at least one slot i) creates an opening between at least two portions of the metal tab and ii) exposes the semiconductor die in relation to the metal tab. The semiconductor die can be a silicon (Si) die and the metal tab can be a copper (Cu) tab, where the at least one slot includes at least four slots corresponding to each of at least four sides of the metal, and wherein with respect to each of the at least four sides, each corresponding slot i) creates an opening between at least two portions of the Cu metal tab and ii) exposes the Si semiconductor die in relation to the Cu metal tab.

Abstract: A neutral grounding resistor fault protection arrangement. The fault protection arrangement may include a neutral grounding resistor, the neutral grounding resistor comprising a ground end and a non-ground end; a sense circuit, coupled to the non-ground end of the neutral grounding resistor; and a neutral grounding monitor, coupled to the non-ground end of the neutral grounding resistor, the neutral grounding monitor comprising an injection signal generator, the injection signal generator arranged to generate a frequency of 240 Hz or greater.

Abstract: A resistance heater may include a polymer positive temperature coefficient (PPTC) material, arranged in a ring shape that defines a heater body; and an electrode assembly, comprising two or more electrodes arranged in contact with the heater body at two or more locations, wherein PPTC material comprises: a polymer matrix, the polymer matrix defining a PPTC body; and a conductive filler component, disposed in the polymer matrix.

Abstract: A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.

Abstract: A self-limiting heater and method for building the self-limiting heater are disclosed. The self-limiting heater consists of a resistor and a PTC resistor coupled together in series with a power supply. Both resistive devices have good thermal coupling. The resistor has a minimal resistance change over changes in temperature while the resistance of the PTC resistor increases with an increase in temperature. The ohmic resistance ratio between the resistor and the PTC may be used to adjust the heater characteristics and limit the characteristic sharpness.

Abstract: Exemplary embodiments of the present disclosure of a fuse may include a fuse body having a first portion and a second portion. The first and second portions may be configured to mate together thereby forming an internal cavity. A first inner termination and a second inner termination may be at least partially attachable to the first and second portions of the fuse body at respective first and second ends. A fusible element may be disposed in the cavity of the fuse body and extendable from the first inner termination at the first end of the fuse body to the second inner termination at the second end of the fuse body. The fusible element may be attachable to the first inner termination at a first connection and the second inner termination at a second connection. The first and second connections may be inspectable when the fuse is in an assembled state.