Abstract: In a method of forming an integrated circuit device, sidewall oxides are formed by plasma oxidation on the patterned gate. This controls encroachment beneath a dielectric layer underlying the patterned gate. The patterned gate is oxidized using in-situ O2 plasma oxidation. The presence of the sidewall oxides minimizes encroachment under the gate edge.

Abstract: A rectangular termination ring for a power distribution mesh is placed on the upper two layers of an integrated circuit and may be placed over some I/O circuitry. The strapping connecting the bonding pads to the termination ring are placed on upper levels of the integrated circuit, minimizing the via requirements and freeing space for additional circuitry. Further, the termination ring may be adapted to work in conjunction with L-shaped, as well as other power distribution meshes.

Abstract: A power supply feedthrough protection circuit which solves the problem of voltage feedthrough from a bus cable charging a chip power-supply beyond acceptable transistor limits. The circuit continuously senses the chip power-supply, compares the supply to an acceptable threshold, and provides a low-impedance current path as soon as the power-supply exceeds the threshold. The circuit allows a driver to draw current from the cable, in a controlled manner, and provides that the power supply is therefore never allowed to exceed the maximum allowable limit for transistors.

Abstract: A substrate of the type for receiving an integrated circuit and a mold cover. The mold cover covers a first portion of the substrate and leaves a second portion of the substrate exposed with a boundary edge between the first portion of the substrate and a second portion of the substrate. The substrate has electrically conductive traces and electrically conductive vias on an upper layer adjacent the mold cover. The electrically conductive traces do not cross the boundary edge on the upper layer of the substrate.

Abstract: Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer.

Abstract: The present invention is directed to a parallel/serial SCSI with legacy support. A small computer system interface (SCSI) converter module may include a small computer system interface (SCSI) converter. The converter is suitable for converting a parallel bus structure to a serial bus structure, and the converter is also suitable for supporting a parallel bus structure to a parallel bus structure.

Abstract: A method for controlling arbitration that may be used for a bus. The method generally comprises the steps of (A) controlling a bus mastership for the bus using a first arbitration scheme, (B) controlling the bus mastership using a second arbitration scheme in response to a first signal indicating a delay in a transfer between a first master of a plurality of masters and a slave on the bus, and (C) controlling the bus mastership using the first arbitration scheme in response to a second signal ending the delay in the transfer between the first master and the slave.

Abstract: A package substrate having separate routing layers for transmitter signals and receiver signals, which signals are routed in differential pairs. The differential pairs of signal routing lines are isolated between a separate ground plane for transmitter and receiver traces and dedicated power planes, where a single power plane is dedicated to a single differential pair of signal routing lines. In this manner, a high degree of electrical isolation exists not only between the transmitter signal traces and the receiver signal traces, which are on different layers, but also between different differential pairs of signal routing lines on the same layer, each of which has its own dedicated power plane. Thus, a very high speed core routing system can be designed in a package substrate that can then be adapted as necessary to support a broad range of different integrated circuit designs.

Abstract: The subject matter described herein involves an improved etch process for use in fabricating integrated circuits on semiconductor wafers. The selectivity of the etch process for silicon carbide versus silicon oxide, organo silica-glass or other low dielectric constant type material is enhanced by adding hydrogen (H2) or ammonia (NH3) or other hydrogen-containing gas to the etch chemistry.

Abstract: A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxide from the active areas and selectively growing an epitaxial silicon layer.

Abstract: An integrated circuit, including a substrate with circuitry formed therein, where the substrate has a peripheral edge. Also included are a top most electrically conductive layer and an underlying electrically conductive layer. Outer bonding pads are disposed in an outer ring, and are formed within the top most layer. Inner bonding pads are disposed in an inner ring, and are formed within the top most layer. Inner connectors electrically connect the inner bonding pads to the circuitry. The inner connectors are formed within the underlying layer, and have a width that is less than the width of the inner bonding pads, thereby defining a gap between the inner connectors. Outer connectors electrically connect the outer bonding pads to the circuitry. The outer connectors are formed within the underlying layer, and have a width that is less than the width of the gap between the inner connectors.

Abstract: Electrical components and associated processes for enhancing automated test of a system by permitting automated generation and application (injection) of real-world stimuli applied to the system under test without the need for manual intervention. Electrical components of the present invention intercede in the exchange of signals and power over various signaling paths within a system under test. Under programmable control by methods of the invention, the electrical components of the present invention may simulate any desired real-world stimulus on any signal path associated with the system under test. Automated test procedures associated with the electrical components may then automate all phases of a test procedure including setup of the test environment, application of real-world stimuli, verification of operation of the system under test and cleanup and recovery following performance of the automated test sequence.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be conf igured to generate an address signal in response to (i) a first ramp signal, (ii) a second ramp signal, and (iii) a format signal. The second circuit may be configured to generate the first and second ramp signals in response to a one or more control signals. The address signal may support a raster format when the format signal is in a first state and may support a macroblock format when the format signal is in a second state.

Abstract: A tool and method for increasing fault coverage of an integrated circuit. The tool includes a key nodes detection device for matching key nodes to a fault grading report list of undetected nodes, a multi-sites selection device for reading a layout file of available multi unit sites for the integrated circuit, a site matching device for matching available multi-unit sites to key undetected nodes, and a netlist generation device for building logic functions in the available multi-unit sites for connection to the key undetected nodes. Use of the invention enables increased fault coverage of integrated circuit circuits for little or no added expense.

Abstract: A circular buffer control circuit, a method of controlling a circular buffer and a digital signal processor (DSP) incorporating the circuit or the method. In one embodiment, the circuit includes: (1) address calculation logic, having multiple datapaths, that calculates, from data regarding a buffer operation, an updated address result therefor and (2) modification order determination circuitry, coupled in parallel with the address calculation logic, that transmits a memory access request and the updated address result in an order that is based on whether the buffer operation is pre-modified or post-modified.

Abstract: An integrated circuit with a power and ground distribution system having a first conductive layer, a second conductive layer, and an insulating layer disposed between the first layer and the second layer. A first ring is formed in the first layer, where the first ring forms a first loop around a peripheral portion of the integrated circuit. First straps are formed in the first layer, where the first straps have connections to the first ring. First horizontal members are formed in the first layer, where the first horizontal members have connections to the first ring. Second horizontal members are formed in the first layer, where the second horizontal members do not have connections to the first ring. A second ring is formed in the second layer, where the second ring forms a second loop around the peripheral portion of the integrated circuit. The second ring is interleaved with the first ring. Second straps are formed in the second layer, where the second straps have connections to the second ring.

Abstract: A dielectric film block is used in semiconductor processing to protect selected areas of the wafer from silicidation. The selected areas may include resistors. A first layer of oxide is formed on the resistor and a second layer comprising SiON or Si3N4 is disposed on the oxide. A mask is patterned to allow etching to take place in the areas where silicide formation is desired. The oxide layer serves as an etch stop layer during etching of the second layer.

Abstract: A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive species is preferentially desorbed leaving a layer of the first product.

Abstract: The present invention is directed to an improved method for the binarization of data in an MPEG data stream. The invention makes use of unary binarization to create codewords up until an index threshold. Once the threshold has been met, succeeding code symbols have appended to them an exp-Golomb suffix. This hybrid binarization scheme reduces the number of binary codewords to be processed by a Binary Arithmetic Coder (BAC), thus reducing the computation required by the BAC.

Abstract: An apparatus having a first circuit, a second circuit, and a third circuit. The first circuit may be configured to generate a first phase control signal in response to a phase difference between a first input clock signal and a first output clock signal. The second circuit may be configured to generate a second phase control signal in response to a phase adjust signal. The third circuit may be configured to generate the first output clock signal by delaying the first input clock signal in response to a delay control signal. The delay control signal may be generated by summing the first and the second phase control signals.