Abstract: A method for etching a surface of an integrated circuit. A layer of photoresist is applied to the surface of the integrated circuit. The layer of photoresist is exposed and developed, and the surface of the integrated circuit is etched with an etchant that contains chlorine. The surface of the integrated circuit is exposed to tetra methyl ammonium hydroxide to neutralize the chlorine, and rinsed with water.

Abstract: A capacitor has a titanium nitride layer deposited on a silicon substrate for stress reduction and adherence promotion, and a layer of tantalum is deposited thereon. The tantalum layer is oxidized to produce a tantalum pentoxide layer. A top electrode of metal or polysilicon is then deposited on the tantalum pentoxide layer. The top electrode may be made from polysilicon or a similar semiconducting material so that a space charge layer will form in the electrode which will change the rate at which the capacitor charges and discharges. Alternatively, the top electrode may be made from metal to provide an optimal linear response for use in analog applications. Further, an undoped polysilicon layer may be provided above the tantalum pentoxide layer to store charge for non-volatile memory applications. For this purpose, polysilicon can be used to form the top electrode; alternatively, materials such as silicon nitride may be used.

Abstract: The invention provides a process for selectively polishing a main electrically conductive layer of an integrated circuit structure by the steps of forming a polishing barrier layer over depressed regions of the main electrically conductive layer; and polishing the portion of the main electrically conductive layer not covered by the polishing barrier layer. The integrated circuit structure treated by the process of the invention contains one or more openings in a layer of dielectric material, and the main electrically conductive layer fills the one or more openings such that the depressed regions of the main electrically conductive layer overlie said one or more openings.

Abstract: A metal-insulator-metal capacitor is embedded in an interconnect layer of an integrated circuit (IC). The interconnect layer has a cavity, and the capacitor is formed in the cavity with one of the plates of the capacitor integral with a conductive layer of the interconnect layer, so the capacitor plate electrically communicates with the interconnect layer. The interconnect layer has multiple conductive layers, including a layer, such as aluminum, that is subject to deformation at certain temperatures during fabrication of the IC, and the cavity extends through this layer. A remaining conductive layer of the interconnect layer defines one of the capacitor plates, and a dielectric layer and another capacitor plate are formed thereon within the cavity. Via interconnects of about the same length electrically connect to the top plate and through the interconnect layer to the bottom plate.

Abstract: A memory device configured to detect changes in fault patterns is disclosed. In one embodiment, the memory device includes a memory array, a built-in self-test (BIST) unit, and a built-in self-repair (BISR) unit. The BIST unit runs test patterns on the memory array to identify faulty locations in the array. A comparator within the BIST or external to the BIST compares the actual output of the memory array to the expected output, and asserts an error signal whenever a mismatch occurs. The BISR unit intercepts addresses directed to the memory array, and operates on the addresses in three distinct phases. During a training phase, the BISR unit stores the intercepted addresses when the error signal is asserted. During the normal operation phase, the BISR unit compares all intercepted addresses to stored addresses and redirects a corresponding memory access if any intercepted address matches a stored address.

Abstract: Channels are routed in an integrated circuit layout by reserving grid positions for buffers. Cell pins are identified at different y-coordinates to be connected by the channel. A determination is made as to the necessity of a jog between vertical segments, and if so, a y-coordinate is assigned to each such jog. An x-coordinate is assigned to each channel segment extending across the y-coordinates. Y-coordinates are assigned to buffers to be connected to the channel.

Abstract: A system and method for performing an inverse discrete cosine transform (IDCT) based on DCT data is disclosed. The system is IEEE compliant and transforms one block (8×8) of pixels in 64 cycles. The IDCT processor receives the DCT input, produces the matrix (QXTQ)P, or XQP, in IDCT Stage 1 and stores the result in transpose RAM. IDCT Stage 2 performs the transpose of the result of IDCT Stage 1 and multiplies the result by P, completing the IDCT process and producing the IDCT output. The system performs the matrix function QXtQ, where X represents the DCT data and Q is a predetermined diagonal matrix. The resultant value is adjusted by discarding selected bits, and the system then postmultiplies this with the elements of a predetermined P matrix, and discards selected bits. The system performs a conversion and storing function and performs a sign change to obtain QXtQP. This completes first stage processing, which is then passed to transpose RAM.

Abstract: A method, system and a computer product for a new partial scan technique that incurs significantly less overhead than the full-scan technique and yet achieves very high test coverage in short CPU times are provided. Scan memory elements are selected so that the scanned circuit satisfies two key properties in the test mode. First, the scanned circuit has partitions that are peripherally interacting finite state machines (peripheral partitions). Second, the memory element dependency graph (S-graph) of each peripheral partition of the scanned circuit has a tree structure. An efficient for algorithm peripheral partitioning and tree decomposition is provided. The scan memory element selection algorithm iteratively partitions the S-graph into disjoint sub-graphs with the tree structure.

Abstract: A composite layer of dielectric material is first formed over the integrated circuit structure, comprising a thin barrier layer of dielectric material, a layer of low k dielectric material over the barrier layer, and a thin capping layer of dielectric material over the layer of low k dielectric material. A photoresist mask, formed over the capping layer, is baked in the presence of UV light to cross-link the mask material. The composite layer is then etched through the resist mask using an etchant gas mixture including CO, but not oxygen. Newly exposed surfaces of low k dielectric material are then optionally densified to harden them. The resist mask is then removed using a plasma of a neutral or reducing gas. Exposed surfaces of low k dielectric material are then passivated by a low power oxygen plasma. Preferably, optional densification, mask removal, and passivation are all done in the same vacuum apparatus.

Abstract: Provided is a technique for forming an indium field implant at the bottom of an STI trench to strengthen the p-well under field oxide, but to not weaken the n-well under the field oxide. The diffusivity of indium is an order of magnitude smaller than that of boron and the activation level of indium is high enough for well dopings. Thus, the implanted indium is able to keep the concentration of p-dopant at the p-n well junction under the field isolation and the oxide/silicon interface high, even with boron depletion, so that punchthrough is avoided.

Abstract: A fast method and apparatus for built-in self-repair (BISR) of memory arrays is disclosed. In one embodiment, an integrated circuit includes a repair circuit coupled between the address decoder and the memory array. The address decoder receives memory addresses and asserts corresponding word lines. The memory array has default words associated with the word lines, but also includes extra words. By default, the repair circuit maps the word lines from the address decoder to the memory array word lines for the default words. However, the repair circuit includes at least one latch for each of the decoder word lines. When a latch is set, the repair circuit isolates the decoder word line from the default word and remaps the decoder word line to an extra word in the memory. The latches remain set while as long as power is applied, so that accesses to faulty memory words are automatically rerouted without any additional overhead relative to accesses to functional memory words.

Abstract: An apparatus performs motion estimation based on an average of previous field references in a flexible, yet high performance manner. The apparatus has a command memory for storing a motion estimation command list segment which in turn contains a search command for specifying a merged search operation over one or more search positions. The apparatus also has a score memory for storing the result of each merged search operation. The score memory is initialized when the merged search operation is initiated. During the search operation, the score memory accumulates the result of each search position. The apparatus also has a search engine connected to the command memory and to the score memory for determining from the score memory a search position with the lowest score. The search engine then generates dual prime motion estimation outputs in the form of motion estimation result list segments.

Abstract: A method of clock buffer partitioning includes the steps of receiving as input a description of a number of clock buffers for buffering a system clock to a plurality of clocked circuit elements; constructing a balanced clock tree from the description wherein the balanced clock tree includes a plurality of buffers in a hierarchy of buffer levels; partitioning each of the hierarchy of buffer levels into a plurality of buffer groups wherein clock skew in each of the plurality of buffer groups at each buffer level is substantially minimized; routing a clock input to a plurality of buffers within at least one of the plurality of buffer groups in at least one of the hierarchy of buffer levels to construct a zero clock skew among the plurality of buffers; calculating an estimated group insertion delay for the at least one of the plurality of buffer groups as a sum of an internal insertion delay and a downstream insertion delay of one of the plurality of clocked circuit elements; and generating as output the estimate

Abstract: A memory circuit generally comprising a sense amplifier, an array of bit cells, a plurality of bit lines, and a circuit. The array of bit cells may include a far bit cell disposed in the array opposite the sense amplifier. The bit lines may couple the bit cells to the sense amplifier. The circuit may be configured to assert a far wordline signal controlling the far bit cell during a precharge cycle for the bit lines.

Abstract: A circuit includes a switched-capacitor array for converting a digital signal into a corresponding amount of electric charge, a switching circuit, and a continuous-time reconstruction filter circuit. The switched-capacitor array includes a plurality of capacitors and a summing node to which the plurality of capacitors are connected. The switching circuit is coupled between the summing node and the continuous-time reconstruction filter circuit, and supplies a pulsed current signal to the continuous-time reconstruction filter circuit. The circuit may further include a gain stage coupled between the summing node and the switching circuit, for controlling a gain of the pulsed current signal. The gain stage may include a coupling capacitor. A digital signal is supplied to the switched capacitor array and converted into a corresponding amount of electric charge. The electric charge is supplied as a pulsed current signal to the continuous-time reconstruction filter circuit without converting into a voltage signal.

Abstract: A high speed input buffer of the type having a first connection in electrical communication with a positive voltage source and a second connection in electrical communication with a negative voltage source. A first native transistor is functionally disposed between the positive voltage source and the first connection. A first contact of the first native transistor is electrically connected to the positive voltage source and a second contact of the first native transistor is electrically connected to the first connection. A second native transistor is functionally disposed between the negative voltage source and the second connection. A first contact of the second native transistor is electrically connected to the negative voltage source and a second contact of the second native transistor is electrically connected to the second connection.

Abstract: The present invention is directed to a system and method of modeling electrical circuits. The present invention may provide improved software for predicting microchip interconnect delays, and in general for an improved semiconductor manufacturing models. Further, the invention may provide for accurate prediction of resistance, capacitance and inductance for interconnections in a semiconductor, allowing for both environmental values and process variations.

Abstract: The subject matter described herein involves a connector cable, particularly for use in a computerized storage system, such as Fibre Channel. The connector cable generally connects together a storage device, a power supply and an optical cable through which optical signals are transferred. A media interface adapter connects between the connector cable and the optical cable and receives electrical power from the power supply through the connector cable to convert the optical signals to electrical signals and vice versa. Using a plurality of the connector cables with or without a connection to the power supply, a plurality of the storage devices may be chained together.

Abstract: A method for detecting an end point of an etching step conducted in an etching chamber. A target emission intensity level is selected for the etching step, and the etching step is performed in the etching chamber. A raw emission intensity level is sensed from the etching chamber during the etching step with an emission intensity level detector. The raw emission intensity level sensed from the etching chamber by the emission detector is modified with an emission intensity level modifier. The raw emission intensity level sensed with the emission intensity level detector from the etching chamber during the etching step is adjusted to the target emission intensity level by adjusting the emission intensity level modifier. The etching process is stopped upon occurrence of a predetermined spectral event sensed by the emission intensity level detector.

Abstract: A variable-gain amplifier circuit includes an input port, an output port, and first and second amplifiers coupled therebetween. The first amplifier includes a first amplifier path having a first amplification factor, effective when the input signal has a voltage level in a first range, and a second amplifier path having a second amplification factor greater than the first amplification factor, effective when the input signal has a voltage level in a second range including voltages of a first polarity greater than that in the first range. The second amplifier includes a third amplifier path having the first amplification factor, effective when the input signal has a voltage level in a third range, and a fourth amplifier path having the second amplification factor, effective when the input signal has a voltage level in a fourth range including voltages of a second polarity greater than that in the third range.