Abstract: The present invention is directed to a system and method for synchronizing data between mirrored subsystems. A method for storing data may include receiving data suitable for storage to a first storage device and a second storage device, wherein the first storage device and the second storage device are mirrored. A map is created including at least one map entry having an identifier suitable for describing a range of addressable data blocks, wherein the map entry corresponds to a data block modified after operation of the first storage device is suspended. A map is stored including the at least one map entry on the second storage device, wherein the map is suitable for being utilized to restore data stored on the second storage device to at least one of the first storage device and a third storage device.

Abstract: A dynamic supply control circuit is provided for a line driver. The line driver has an amplification factor G, receives an input signal voltage, and drives a transmission line having a load RL via a transformer having a turns ratio of 1:n. The circuit includes an input node for receiving an input signal voltage, a supply node for supplying a driving voltage to the line driver, a lift diode coupled between a fixed supply voltage and the supply node, a lift capacitor coupled between the supply node and an output node, and a lift amplifier having the amplification factor G coupled between the input node and the output node. The lift amplifier drives the lift capacitor when the input signal voltage is greater than an input threshold voltage, the input threshold voltage having a value greater than a common mode voltage of the input signal voltage.

Abstract: A method for reducing electrical coupling within a computer multi-port memory cell array is provided. The method comprises twisting complementary wires of a first, inner bit line pair in a first memory cell column, wherein the twisting reverses the complementary wires, and wherein the physical twisting occurs in odd numbered dummy rows, twice along a column. The complementary wires of a second, outer bit line pair in the same column, wherein the physical twisting occurs in even numbered dummy rows, once along the column. The complementary wires of a third, inner bit line pair in a second memory cell column are then twisted, wherein the physical twisting occurs in even numbered dummy rows, once along the column, and the complementary wires of a fourth, outer bit line pair in the second column are twisted in odd numbered dummy rows, twice along the column.

Abstract: A simulation test bench environment for testing a circuit is described. The test bench environment uses high-level task routines executed by one or more bus functional device models to generate input test vectors. A timing and protocol checker verifies both signal timing and functional operation bus specifications. Data and parity miscompares and corruptions are reported in real-time during simulation. An error and interrupt handler services errors and interrupts by communicating with the buses coupled to the circuit to execute specific recovery routines. A memory model is used to generate known expected data for data transactions, to store data from the circuit on data transactions, and to generate operation codes for the circuit.

Abstract: A computerized engineering database feedback system provides special processing instructions for processing materials in a production process, and provides historical information related to the materials processed according to the special processing instructions. The system includes a request entry device through which requesting personnel may input special processing information indicating a way to process the materials differently from a normal way of processing of the materials. An instruction processing device receives the special processing information and generates the special-processing instructions based thereon. A process station device receives the special-processing instructions, and presents the special-processing instructions to material-processing personnel.

Abstract: A variable-gain amplifier circuit includes an input port, an output port, and first and second amplifiers coupled therebetween. The first amplifier includes a first amplifier path having a first amplification factor, effective when the input signal has a voltage level in a first range, and a second amplifier path having a second amplification factor greater than the first amplification factor, effective when the input signal has a voltage level in a second range including voltages of a first polarity greater than that in the first range. The second amplifier includes a third amplifier path having the first amplification factor, effective when the input signal has a voltage level in a third range, and a fourth amplifier path having the second amplification factor, effective when the input signal has a voltage level in a fourth range including voltages of a second polarity greater than that in the third range.

Abstract: The present invention is directed to an apparatus suitable for mounting an integrated circuit (IC) including a frame suitable for receiving an integrated circuit (IC). The frame includes at least one leg coupled to the frame, the leg suitable for engaging a circuit board so as to enable the apparatus to be secured to the circuit board, thereby securing the integrated circuit (IC). At least one of the frame and leg include a conductive material so as to create at least one of a heat conducting path and an EMC ground path between the integrated circuit (IC) and the circuit board.

Abstract: A system, such as an AMBA based system, wherein an interrupt controller is coupled directly to a processor, thereby providing that the processor can access the interrupt controller without having to access a system bus. Specifically, the interrupt controller may be coupled to a port of the processor, such as a tightly coupled memory (TCM) port or a coprocessor port of the processor. The interrupt controller may be coupled to the TCM port along with SRAM.

Abstract: An improvement to a process for manufacturing complementary metal oxide semiconductor devices on a monolithic substrate, where the improved process forms nonvolatile memory devices and programmable logic devices. The improvement includes exposing gate electrodes of a selected portion of the complementary metal oxide semiconductor devices at a point in the process where the gate electrodes have been previously covered by a protective material layer. A capacitive material layer is deposited on the monolithic substrate, such that it contacts the exposed gate electrodes of the selected portion of the complementary metal oxide semiconductor devices. A top electrode material layer is deposited on the monolithic substrate, such that the top electrode material layer contacts the capacitive material layer in a region overlying the exposed gate electrodes of the selected portion of the complementary metal oxide semiconductor devices.

Abstract: A method of generating a cell function and timing model library in a standard library format includes the steps of (a) receiving as input a model source file, a technology dependent file, and a cell list data file; (b) parsing a functional description for each cell in the cell list data file from the model source file; (c) expanding parameterized timing data for each cell in the cell list data file from the technology dependent file; and (d) generating as output a cell model library in a standard library format from the parameterized timing data.

Abstract: A CAM testing procedure detects storage logic faults, comparison logic faults, and faults caused by interactions between the storage and comparison logic for both single port and dual port CAM's. To uncover faults in the storage logic, a series of read and write operations are performed, either using a standard test sequence, such as the March C algorithm, or any other desired test sequence. The CAM test, however, intermixes comparison operations with the read and write operations to uncover faults in the comparison logic. For dual port memories, the test sequence comprises executing comparison operations concurrently with the read and/or write operations, thus revealing faults between the storage and comparison logic. For single port memories, the test sequence comprises performing a comparison operation following the read/write operations at each address, immediately verifying the comparison logic at each address.

Abstract: A process for forming a capacitive structure and a fuse structure in an integrated circuit device includes forming a first capacitor plate and first and second fuse electrodes in a first dielectric layer of the device. In a second dielectric layer overlying the first dielectric layer, a capacitor dielectric section overlying the first capacitor plate, and a fuse barrier section overlying and between the first and second fuse electrodes are formed simultaneously. In a conductive layer overlying the second dielectric layer, a second capacitor plate overlying the capacitor dielectric section, and a fuse overlying the fuse barrier section and contacting the first and second fuse electrodes are formed simultaneously. The capacitor dielectric section and the fuse barrier section may be defined simultaneously by selectively removing portions of the first dielectric layer during a single etching step.

Abstract: The present invention provides a transmission equalization system for use with an integrated circuit package employing a substrate. In one embodiment, the transmission equalization system includes a signal transmission subsystem having a pair of transmission line conductors located in the substrate and employing a differential electrical signal. The transmission equalization system also includes an equalization subsystem located proximate the pair of transmission line conductors that employs at least one aperture positioned and oriented to provide a substantially equivalent transmission environment for each of the pair of transmission line conductors.

Abstract: A circuit and method for generating a write enable pulse that is independent of the clock duty cycle and the clock frequency. The circuit includes a pulse generator for generating a pulse in response to a clock signal and a write enable signal generator for generating a write enable pulse. The pulse tracks the leading edge of the clock signal. A logic circuit is coupled to the pulse generator and the write enable signal generator to generate the write enable pulse by combining the pulse and the write enable signal.

Abstract: A method of datapath cell placement is disclosed that minimizes signal propagation time through a datapath macro and datapath macro area that includes the steps of receiving a datapath description of constrained input pins, unconstrained input pins, and output pins for a datapath block; assigning a first corresponding first cell level to a first datapath cell in a data path of a constrained input pin wherein the first corresponding first cell level is representative of a number of intervening datapath cells between the first datapath cell and the constrained input pin; assigning a second corresponding first cell level to a second datapath cell in a data path connecting the first datapath cell to an unconstrained input pin that is substantially identical to the first corresponding first cell level; and assigning a corresponding second cell level to the datapath cell in the data path connecting the first datapath cell to the unconstrained input pin wherein the second cell level is representative of a number of

Abstract: An improvement to a process for manufacturing complementary metal oxide semiconductor devices on a monolithic substrate, where the improved process forms nonvolatile memory devices and programmable logic devices. The improvement includes exposing gate electrodes of a selected portion of the complementary metal oxide semiconductor devices at a point in the process where the gate electrodes have been previously covered by a protective material layer. A capacitive material layer is deposited on the monolithic substrate, such that it contacts the exposed gate electrodes of the selected portion of the complementary metal oxide semiconductor devices. A top electrode material layer is deposited on the monolithic substrate, such that the top electrode material layer contacts the capacitive material layer in a region overlying the exposed gate electrodes of the selected portion of the complementary metal oxide semiconductor devices.

Abstract: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

Abstract: A single-chip integrated circuit includes a memory array, a built-in self test circuit and a pause circuit. The built-in self test circuit is coupled to the memory array and is adapted to execute a sequence of write and read operations on the memory array. The pause circuit is coupled to and activated by the built-in self test circuit. When activated, the pause circuit pauses the sequence of write and read operations for a pause time period.

Abstract: Disclosed is a process of electrically coupling the gate electrodes of an N-type transistor and a P-type transistor without causing substantial cross diffusion of P-type dopants into the N-type gate electrode and N-type dopants into the P-type gate electrode. This is possible because some or all annealing and diffusion steps are performed while the N-type and P-type gate electrodes are physically isolated from one another. Also disclosed is a Silicide as Diffusion Source process in which dopant atoms implanted in silicide regions diffuses out of the silicide regions and into the substrate to form source and drain diffusions. During this diffusion step adjacent N-type and P-type gate electrodes remain unconnected to prevent cross diffusion. Then, these two electrodes are electrically connected by a local interconnect. The local interconnection is a conductive path formed at about the level of the polysilicon (i.e.

Abstract: A phase measurement circuit includes first and second complementary clock strobe inputs, a local clock input and a sample clock output. A programmable delay line is coupled between the local clock input and the sample clock output and has a plurality of propagation delay settings. First and second toggle circuits are clocked by the first and second clock strobe inputs, respectively, and each has a toggle output that changes state when clocked by the respective first or second clock strobe input. A capture latch circuit has first and second data inputs coupled to the toggle outputs of the first and second toggle circuits, respectively, has first and second capture outputs, and is clocked by the sample clock output. A synchronizer circuit has first and second data inputs coupled to the first and second capture outputs, respectively, has first and second synchronized capture outputs, and is clocked by the local clock input.