Abstract: A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of microelectronic devices formed on the substrate. Each device has a periphery defined by a triangle, and includes an active area formed within the periphery. First and second terminals are formed in the active area adjacent to two vertices of the triangle respectively, and first to third gates are formed between the first and second terminals. The gates have contacts formed outside the active area adjacent to a side of the triangle between the two vertices. The power supply connections to the first and second terminals, the conductivity type (NMOS or PMOS), and the addition of a pull-up or a pull-down resistor are selected for each device to provide a desired AND, NAND, OR or NOR function. A third terminal can be formed between two of the gates and used as an output terminal to provide an AND/OR logic function. The devices are interconnected using three direction routing based on hexagonal geometry.

Abstract: A process for evaluating acceptability of a digital circuit having a first type of circuit element for a first change of state and a second type of circuit element for a second change of state, the process comprising: generating a leading edge of a first pulse with a pulse generation circuit formed on a substrate in common with the digital circuit and having elements of the first and the second type; generating a trailing edge of a first pulse with a pulse generation circuit formed on a substrate in common with the digital circuit and having elements of the first and the second type; generating an accepted-rejected signal, functionally related to the width of the pulse.

Abstract: A transistor circuit is formed on a substrate having source and drain electrodes and multiple current-controlling gates. The two current-controlling gates are separated by spacer oxide material. The first gate is an metal oxide semiconductor (MOS) gate that is insulated from the substrate by a layer of gate oxide. The second gate is a junction field effect transistor (JFET) gate contiguous to the MOS gate that is insulated from the MOS gate by a layer of spacer oxide.

Abstract: Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of the substrate to mask implantation of ions into the wells. A technique for creating a pair of adjacent complementary oppositely-doped wells, such as for a CMOS structure, using a thick oxide growths as a mask is also disclosed. One of the methods of planarizing the one or more layers involves depositing, densifying and re-flowing a layer of glass on top of the topological layer. Another method of planarizing the one or more layers involves depositing, densifying and chemical-mechanically polishing the deposited and densified glass, thereby avoiding an additional temperature cycle (i.e., for re-flowing the glass) which would adversely affect underlying diffusions.

Abstract: A semiconductor integrated circuit is made by a process including the formation on a surface of a semiconductor integrated circuit processing wafer of a layer of material applied to the wafer by plasma enhanced chemical vapor deposition (PECVD). The layer of material may include plural sub-layers, the thicknesses of which are additive to result in the thickness of the layer of material itself. The sub-layers of material may have non-uniform thicknesses across a dimension of the processing wafer because of compromises in the process which are necessary to control various parameters of the material layer other than its thickness. These non-uniformities of thickness of the sub-layers may be controlled to offset one another so that the resulting layer of material has a substantially uniform thickness across the dimension of the processing wafer.

Abstract: A technique is described for testing the performance of a target electronic system ultimately employing an ASIC comprising a core cell and surrounding logic, using an inchoate (designed, but not yet fabricated) ASIC on an interim basis. In one embodiment, a Q-part, or qualification part, which is essentially a bond-out of the core cell, is used in conjunction with programmable logic devices configured to perform the function of the surrounding logic. The Q-part and programmable logic are interconnected on a pod, and plugged into an interim version of a target electronic system. In another embodiment, the Q-part is software-simulated and interconnected on the pod to programmable logic devices. The programmable logic devices may be programmed either on-pod or off-pod, and signals incident to the operation of the pod plugged into the interim electronic system can be monitored and controlled.

Abstract: In a method of manufacturing a semiconductor device, after forming a poly silicon film 54 on a surface of a silicon substrate 51, a silicon nitride film 55 is formed in accordance with a desired pattern and a local oxidation process is carried out to form a field oxide film 56 having a large thickness. Then, after removing the silicon nitride film 55, the poly silicon film 54 is fully converted in to a silicon oxide film 58 and then the thus converted silicon oxide film is removed by wet etching to expose a clean surface of the silicon substrate 51. The poly silicon film does not constitute an oxygen source, so that during the local oxidation, a lateral diffusion of oxygen is prevented and a generation of bird's beak can be suppressed. Further, the poly silicon film serves as a buffer, no stress remains in the surface of the silicon substrate.

Abstract: Methods of polishing, particularly chem-mech polishing a semiconductor substrate to planarize a layer, to remove excess material from atop a layer, and to strip back a defective layer are disclosed. Aluminum oxide particles having a small, well controlled size, and substantially in the alpha phase provide beneficial results when polishing.

Abstract: A test reticle and alignment mark optimization method is provided for determining the optimal alignment mark size for the efficient and accurate alignment of process layers during integrated circuit manufacture. The test reticle includes a number of orthogonally arranged alignment marks of various types and sizes and one or more registration structures. The method involves the steps of determining an initial expected range of alignment mark sizes on the test reticle which are suitable for a particular application; applying the test reticle patter to test wafers; further processing the test wafers; measuring the alignment signals produced by scanning the alignment marks in the initial expected range; quantifying the alignment signal quality; and fitting the quantified alignment signal quality to a statistical model to determine a range of optimal alignment signal dimensions.

Abstract: A method of making, including a method of floorplanning, an integrated circuit includes the separation of electrical logic function cells of the integrated circuit into sets or macros of data path cells, each of which evidence a high level of similarity or repetitiveness in the integrated circuit, and into sets of random logic cells, which each are connected to data path cells but which do not meet topological and connectivity criteria for the data path cells. The data path cells are iteratively sorted according to connectivity requirements and are initially placed on a provisional floor plan of the integrated circuit in a cell-space matrix of rows and columns, the rows being of substantially uniform width to accommodate functional modules of the data path cells, and the rows being of variably height to cooperatively define the spaces of the cell-space matrix.

Abstract: A random number generating apparatus for an interface unit of a Carrier Sense with Multiple Access and Collision Detect (CSMA/CD) Ethernet data network. The interface unit includes a transmit backoff unit for implementing a backoff algorithm in response to a network collision signal and a random number. The apparatus comprises a dual mode random number generator and a multiplexer for switching the random number generator between modes in accordance with the serial address bits of a data packet being processed by the interface unit. The random number generator includes a 25 stage linear feedback shift register. The multiplexer has two signal inputs connected to outputs of the 18th and 22nd stages of the shift register respectively, a switch input connected to receive the serial address bits and an output connected in circuit to an input of the shift register.

Abstract: Serial high speed interconnect devices are integrated with semiconductor devices to reduce the number of input-output pins required for communications and control between a plurality of semiconductor devices. The serial high speed interconnect devices transfer the data serially at a rate fast enough to replace large parallel data and address buses that require one conductive path per bit of data. Eliminating large parallel data and address buses allows the integrated circuit assembly containing the semiconductor device to be smaller, simpler and lower in cost. The subsequent reduction in the size of the integrated circuits improves the layout density of electronic systems and reduces crosstalk and other undesirable signal transfer anomalies. The serial high speed interconnection devices are implemented with a low cost serial interface logic technology that may be easily implemented on a semiconductor die in conjunction with the main logic circuits.

Abstract: A technique for mounting polishing pads to a platen in chemi-mechanical semiconductor wafer polishing apparatus is disclosed. A lower pad is mounted to the platen, and is trimmed to the size of the platen. An upper pad is mounted to the lower pad, and is sized so that an extreme outer edge portion of the upper pad extends beyond the trimmed outer edge of the lower pad. The outer edge portion of the upper pad is deformed downwardly, towards the lower pad. In this manner, polishing slurry is diverted from the pad-to-pad interface. Additionally, an integral annular lip can be formed on the front face of the upper pad, creating a reservoir for slurry to be retained on the face of the upper pad for enhancing residence time of the polishing slurry prior to the slurry washing over the face of the upper pad.

Abstract: A system for interactive design and simulation of an electronic circuit allowing a user to design a circuit by graphical entry and to view full or partial simulation and design results simultaneously, on a single display window. The user is able to define the form of a display of speed, delay, loading, symbols, simulation input and/or output values on each node and any path of the design. Simulation may be user-defined or other process time. The user is further able to view any information relevant to any object in the design at any level of design abstraction, and is able to view multiple levels of design abstraction simultaneously and to display information common to the various representations.

Abstract: A CMOS-technology, DRAM integrated circuit includes paired P-type and N-type wells in a substrate, which wells are fabricated using a self-aligning methodology. Similarly, FET's of the DRAM circuit are fabricated in the wells of the substrate using a self-aligning methodology to provide FET's of opposite polarity in a DRAM which may have paired memory cells and dummy cells for symmetry of circuitry. The DRAM includes a multitude of annular multi-plate capacitor structures formed atop the FET's of the substrate, and plural layers of insulative dielectric with embedded bit and word traces providing for connection of the multitude of memory cells of the DRAM to external circuitry.

Abstract: A system of the invention connects an Asynchronous Transfer Mode (ATM) data network to a plurality of host units. The data network transfers data in the form of ATM cells. A plurality of ATM termination units are connected between the network and the host units respectively. Each termination unit includes a virtual channel memory for storing ATM cells; a processor for segmenting and reassembling the ATM cells stored in the memory; a network interface for transferring ATM cells including segmented Conversion Sublayer Payload Data Units (CS-PDU)s between the memory, the processor and an ATM network; and a host interface for transferring unsegmented CS-PDUs between the memory, the processor and a host unit. The processor of each termination unit includes a computing unit, and a programmable instruction memory for storing a program for controlling the computing unit.

Abstract: An audio decoder decodes audio frames included in a Motion Picture Experts Group (MPEG) bitstream for presentation or playing. Each audio frame includes a synchronization code and a frame header, followed by audio data. The synchronization codes are detected, and it is determined that the decoder is synchronized to the bitstream after a first predetermined number, for example three, of successive valid audio frames have been detected. It is similarly determined that the decoder is unsynchronized to the bitstream after a second predetermined number, which can also be three, of successive invalid audio frames have been detected. Each and every frame is determined to be valid if its header parameters are valid, it passes the CRC error check (optional), no syntax errors are detected and its frame length (interval) is as expected.

Abstract: A T1 digital PCM signal frame synchronizer includes a RAM memory for storing a complete extended superframe of received data, a pattern detector for detecting patterns in the memory that match a predetermined frame alignment signal, and a plurality of address pointer registers and associated counters. A given address within the RAM corresponds to a particular bit position within the received data. The first time that a pattern is detected at a given address within memory, that address is stored into a register, and its associated counter set to one. Subsequent pattern matches and violations at that address cause the counter to increment and decrement, respectively. A register whose counter value decrements down to zero becomes available for storing a new address. In-sync is declared when any counter exceeds an in-sync threshold. Out-of-sync is declared when that counter falls to an out-of-sync threshold or below.

Abstract: A semiconductor integrated circuit includes a semiconductor circuit chip housed in a package. The package provides for electrical interface of the integrated circuit chip with external circuitry, and also provides environmental protection for the circuit chip. The circuit chip includes a circuit portion which liberates heat into the semiconductor substrate of the chip during operation of the integrated circuit. The integrated circuit chip also includes a layer of insulative material which overlies the semiconductor substrate. A thermally conductive plug member penetrates through the layer of insulative material and extends into a hole formed in the semiconductor substrate. This plug member is in conductive heat transfer relation with the material of the semiconductor substrate, and connects thermally with high-conductivity heat transfer structure conducting heat from the substrate to the package for liberation to the ambient.

Abstract: A method of cell placement for an integrated circuit chip includes performing a chaotic improvement operation on an initial cell placement. At least some of the cells are relocated to new locations that provide lower interconnect wirelength and congestion. For each cell, the centroid of the net of cells to which the cell is connected is computed. The cell is then moved toward the centroid by a distance that is equal to the distance from the current position of the cell to the centroid multiplied by a "chaos" factor .lambda.. The value of .lambda. is selected such that the cell relocation operations will cause the placement to converge toward an optimal configuration without chaotic diversion, but with a sufficiently high chaotic element to prevent the optimization operation from becoming stuck at local fitness maxima.