Abstract: A method and apparatus for forming large scale fields suitable for use in the fabrication of integrated circuit structures having submicron dimensions. The method includes subdividing the large scale field into a plurality of subfields along the boundaries of functional components forming a very large scale integrated circuit. Stitching the subfields into the large scale field is then substantially simplified since the number and dimensions of conductive interconnects between the functional components can be more easily accommodated.

Abstract: A semiconductor device includes a configuration having an array of logic gates electrically connected with an array of input/output (I/O) circuit devices, and also electrically connecting with an array of connector pads by which electrical connection with the semiconductor device may be effected. The array of logic gates is linearly continuous and is unbounded along at least a first axis through to boundaries imposed an edge of the semiconductor wafer. The arrays of I/O circuit devices and connector pads are disposed adjacent, and in one embodiment parallel, to the array of logic gates. Integrated circuit structures including a customized number of individual logic gate elements may be easily provided by cutting a selected length from the strip-like portion of the array of logic gates. Requisite connector pad and I/O circuit features are provided by the adjacent arrays of I/O circuit devices and the adjacent array of connector pads.

Abstract: A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of CMOS microelectronic devices formed on the substrate. Each device includes a triangular ANY element of a first conductivity type (PMOS or NMOS), and a triangular ALL element of a second conductivity type (NMOS or PMOS), the ANY and ALL elements each having a plurality of inputs and an output that are electrically interconnected respectively. The ANY element is basically an OR element, and the ALL element is basically an AND element. However, the power supply connections and the selection of conductivity type (NMOS or PMOS) for the ANY and ALL elements can be varied to provide the device as having a desired NAND, AND, NOR or OR configuration, in which the ANY element acts as a pull-up and the ALL element acts as a pull-down, or vice-versa.

Abstract: A process is disclosed for forming an integrated circuit device, such as an EPROM device, with a floating gate electrode with a discontinuous phase of metal silicide formed on a surface thereof is described. The process for forming such a discontinuous phase of metal silicide on the surface of a polysilicon floating gate electrode for the device comprises the steps of depositing a first polysilicon layer over a substrate, and preferably over a thin oxide layer on the substrate capable of functioning as a gate oxide; then forming a very thin layer of a silicide-forming metal over the polysilicon layer; and heating the structure sufficiently to cause all of the silicide-forming metal to react with the underlying polysilicon layer to form metal silicide and to coalesce the metal silicide into a discontinuous phase on the surface of the polysilicon layer.

Abstract: A circuit for holding constant the propagation delay time at an output terminal in response to an input signal having a varying transition time from one logic state to another logic state at an input terminal is provided. The circuit has a plurality of inverters, each inverter having an input node and an output node, connected in series between the input terminal and the output terminal. The circuit also has a first capacitive means coupled to one of the first inverter output nodes through a switch, and has a means coupled between the input terminal and the switch for engaging the switch to couple the capacitive means to one of the first inverter output nodes. The engaging means is timed to couple the capacitive means responsive to the transition time of the input signal whereby the propagation delay time at the output terminal is constant.

Abstract: A camera comprising various arrangements for employing optical elements in association with photosensitive elements are described. In some of the arrangements, the optical elements are formed integrally with a substrate containing the photosensitive elements. In other arrangements, an optical element is mounted to a package, or the like, containing the substrate and photosensitive elements. In other arrangements, two or more optical elements are employed, including conventional refractive elements, refractive focusing elements, and refractive beam splitting elements. Utility as solid state image sensors is discussed. Utility for monochromatic and color imaging is discussed. Various devices based on such camera arrangements and methods of making same are discussed.

Abstract: A CMOS-technology, DRAM integrated circuit includes paired P-type and N-type wells in a substrate, which wells are fabricated using a self-aligning methodology. Similarly, FET's of the DRAM circuit are fabricated in the wells of the substrate using a self-aligning methodology to provide FET's of opposite polarity in a DRAM which may have paired memory cells and dummy cells for symmetry of circuitry. The DRAM includes a multitude of annular multi-plate capacitor structures formed atop the FET's of the substrate, and plural layers of insulative dielectric with embedded bit and word traces providing for connection of the multitude of memory cells of the DRAM to external circuitry.

Abstract: Unsingulated dies on a wafer may be individually electronically selected using various "electronic mechanisms" on the wafer. Conductive lines extend on the wafer from the electronic mechanism to the individual dies. The conductive lines may be provided in sets of two or more, such as for providing discrete power and ground connections from the external equipment to the individual dies. Redundant conductive lines may be provided to ensure against "open" faults. Diode and/or fuses may also be provided in conjunction with the conductive lines to ensure against leakages and shorts. Redundant electronic selection mechanisms may also be provided.

Abstract: Bus control circuitry for enabling/disabling the drivers of a bus in an integrated circuit is presented. The bus control circuitry has master control signal logic blocks and output enable blocks. The bus control circuitry enables one and only one bus driver set at a time to avoid bus contention. Furthermore, the bus driver circuits are enabled and disabled with precise timing to avoid even momentary bus contention. Finally, the bus, driver circuits and control circuitry may be tested with serial scanning.

Abstract: An apparatus for collecting photons emitted by hot spots in an integrated circuit. Means are provided for intermittently energizing the circuit. A photon receptor detects the photons emitted by the circuit, and produces a photon signal. A shutter, disposed between the circuit and the photon receptor, is opened by a controller when the circuit is not energized, and closed by the controller when the circuit is energized. By thus closing the shutter when the circuit is energized, the photon receptor is shielded from receiving the photons generated during the refresh cycle of the energized device, and is able to detect photons from a defect in the circuit over a period of time that is longer than the refresh rate of the circuit.

Abstract: A method, and resulting product, are disclosed for selectively forming polycrystalline silicon over exposed portions of a single crystal silicon substrate. The method includes inhibiting the formation of such polycrystalline silicon over adjacent silicon oxide surfaces; and the resulting product of such a process. The polycrystalline silicon is selectively deposited over the single crystal silicon substrate by first forming a thin layer of a lattice mismatched material over the single crystal silicon surface, and then depositing a layer of polycrystalline silicon over the lattice mismatched material. Preferably, the thin lattice mismatched layer comprises a silicon/germanium (SiGe) alloy.

Abstract: A technique is described for providing body coloration and colored indicia for indicating one or more characteristics of an integrated circuit device. Package body coloration is one source of information about device characteristics. Other indications relate to colored indicia. The colored indicia are relatively large and easily viewable from distances too great for printed text on the package body to be read comfortably. The indicia is (are) colored other than black or white. Among the visible indicia characteristics which can be used to convey information are: indicia color (or colors on multi-colored indicia), shape, size, orientation, and/or location. Among the various integrated circuit device characteristics which can be conveyed by the indicia characteristics are: device function, device speed, level of testing, degree of rad-hardness, location of reference pin, side, corner or surface, location and function of groups of pins carrying related signals, etc.

Abstract: Various techniques for forming superconductive lines are described whereby superconductive lines can be formed by stamping, etching, polishing, or by rendering selected areas of a superconductive film (layer) non-superconductive. The superconductive material can be "perfected" (or optimized) after it is formed into lines (traces). In one embodiment, trenches are etched in a substrate, the trenches are filled with superconductive material, and any excess superconductive material overfilling the trenches is removed, such as by polishing. In another embodiment, superconductive lines are formed by rendering selected areas of a superconductive layer (i.e., areas other than the desired superconductive lines) non-superconductive by "damaging" the superconductive material by laser beam heating, or by ion implantation. Superconductive lines formed according to the invention can be used to protect semiconductor devices (e.g.

Abstract: Gate level netlists used for timing analysis in integrated circuit design are reduced using a timing shell generator while preserving critical information for timing analysis. After verification of timings, the gate level netlist is convened into a shell containing block boundary information. The function of the shell generator is to delete internal cells meeting a set of criteria. The result is a shell netlist containing a subset of the original netlist. Thus, the design cycle time involved and computing time and resources needed in ASIC development for chips using circuits represented by timing shell netlists are decreased by substituting design verification at the top level of large hierarchical netlists or large flat netlists by bottom up verification procedures using timing shells.

Abstract: A conductive member is described with a surface of controlled roughness thereon which is useful in the construction of an integrated circuit structure. In a preferred embodiment, the conductive member is formed using a mixture of germanium and silicon which is then oxidized, resulting in the formation of a roughened surface on the germanium/silicon conductive member due to the difference in the respective rates of oxidation of the germanium and silicon. After oxidation of the conductive member, the oxide layer may be removed, leaving the toughened surface on the germanium/silicon conductive member. When an integrated circuit structure such as an EPROM is to be formed using this conductive member with a roughened surface, a further layer of oxide is then deposited over the roughened surface followed by deposition of a second layer of conductive material such as polysilicon or a germanium/silicon mixture, from which the control gate will be formed.

Abstract: An integrated circuit includes a plurality of signal lines, a plurality of pull transistors connected between the signal lines respectively and an electrical potential, and an IDDQ test control for turning on the pull transistors for normal operation, and for turning off the pull transistors for IDDQ testing. The IDDQ test control includes a test signal generator for generating an IDDQ test control signal that turns off the pull transistors, and an IDDQ test signal line that is connected to the test signal generator and to the pull transistors. The pull transistors are designed within a periphery of the circuit, and the IDDQ test signal line forms a ring. The test signal generator includes an external pin, a special buffer, or a boundary scan system including a chain of boundary scan cells and a test access port controller. The test control signal can be generated by one of the boundary scan cells, or by the test access port controller.

Abstract: A process of mounting a semiconductor device and leadframe to a printed circuit board are described. The device has a body, and a plurality of leads extending from the body. One or more alignment features are formed on the exterior of the package body, for maintaining precise alignment of the device with respect to a printed wiring board. The alignment feature is a tab formed as part of portion of the leadframe external to the package body. The tab may have various shapes, and may be provided with a hole for registering with a pin on an underlying substrate, such as a printed wiring board. The pin and the tab may be electrically connected.

Abstract: A technique for improving power distribution to an semiconductor die while simultaneously reducing thermally-induced mechanical stresses on bond pads in semiconductor device assemblies is accomplished by providing the signal-carrying bond pads in a collinear arrangement along an axis of the die, and providing power-carrying bond pads in an off-axis location. The on-axis configuration of signal-carrying bond pads minimizes lateral thermal displacements of the bond pads relative to the axis, which minimizes any longitudinal, compressive end displacements of leadframe fingers or bond wires, thereby minimizing thermally induced mechanical stresses of the bond pad interfaces to the die. The positioning of the power-carrying bond pads off-axis reduces the length of internal (to the die) wiring required to connect circuitry on the die to the power-carrying bond pads.

Abstract: A technique of gaining direct access to the inputs and outputs of an embedded microprocessor, otherwise buried behind additional logic, is disclosed. Multiplexers are provided for at least the embedded microprocessor inputs and outputs. In a test mode, the multiplexers connect device input and output pads directly to the embedded microprocessor inputs and outputs. In a normal operating mode, the multiplexers connect the additional logic to the input and output pads. Preferably, in order to standardize design criteria, multiplexers are provided on all of the inputs and outputs of the microprocessor which may become embedded behind additional logic. Additionally, it is possible in the test mode to control the additional logic to a well defined state. The invention provides a simple way to isolate the embedded microprocessor from the rest of the logic and test it thoroughly using test vectors that have already been developed for the stand-alone microprocessor.

Abstract: A single chip router for a multiplex communication network comprises a packet memory for storing data packets, a Reduced Instruction Set Computer (RISC) processor for converting the packets between a Local Area Network (LAN) protocol and a Wide Area Network (WAN) protocol, a LAN interface and a WAN interface. A Direct Memory Access (DMA) controller transfers packets transferring packets between the packet memory and the LAN and WAN interfaces. A packet attribute memory stores attributes of the data packets, and an attribute processor performs a non-linear hashing algorithm on an address of a packet being processed for accessing a corresponding attribute of said packet in the packet attribute memory. An address window filter identifies the address of a packet being processed by examining only a predetermined portion of said address, and can comprise a dynamic window filter or a static window filter.