Abstract: Positive mechanical alignment is provided between substrates using micro-bump contacts by forming "detented" conductive bump contacts on one substrate having a concave end which receive and align the generally convex contour of bump contacts on the other substrate. Various configurations of concavities and convexities are described. Flux may be disposed in the concave end of the detented bump contact to promote formation of joints between the concave and convex bump contacts. Both bump contacts may be formed of reflowable material, such as solder, or one or the other of the contacts may be formed of a non-reflowable material which may also function as a standoff between the two substrates. Each substrate is provided with a plurality of bump contacts, and one substrate may be provided with a combination of convex and concave bump contacts corresponding to concave and convex bump contacts on the other substrate. The inventive technique is useful for joining die-to-die, die-to-substrate, or package-to-substrate.

Abstract: A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

Abstract: Affine image transformations are performed in an interleaved manner, whereby coordinate transformations and intensity calculations are alternately performed incrementally on small portions of an image. The pixels are processed in rows such that after coordinates of a first pixel are determined for reference, each pixel in a row, and then pixels in vertically adjacent rows, are processed relative to the coordinates of the previously processed adjacent pixels. After coordinate transformation to produce affine translation, rotation, skew, and/or scaling, intermediate metapixels are vertically split and shifted to eliminate holes and overlaps. Intensity values of output metapixels are calculated as being proportional to the sum of scaled portions of the intermediate metapixels which cover the output pixels respectively.

Abstract: Dynamic control and delivery of radio frequency power in plasma process systems is utilized to enhance the repeatability and uniformity of the process plasma. Power, voltage, current, phase, impedance, harmonic content and direct current bias of the radio frequency energy being delivered to the plasma chamber may be monitored at the plasma chamber and used to control or characterize the plasma load. Dynamic pro-active control of the characteristics of the radio frequency power to the plasma chamber electrode during the formation of the plasma enhances the uniformity of the plasma for more exact and controllable processing of the work pieces.

Abstract: The invention describes a method for expanding (flattening) hierarchical descriptions of electronic circuits into flat descriptions. The method is characterized by two processes: one which eliminates feed-through and implicit signals, and another which pre-plans the layout of the flattened data structure before flattening. The flattening process may then take advantage of a number of resulting efficiencies to operate more quickly than present flatteners.

Abstract: A process and resulting product are described for forming an integrated circuit structure with horizontal fuses on an insulation layer formed over other portions of the integrated circuit structure by forming rectangular recesses in the insulation layer which are subsequently filled during a subsequent metal deposition step which also serves to fill with the same metal vias or contact openings which have been etched through the insulation layer. Subsequent planarization of the deposited metal layer down to the vias or contact openings, i.e. to remove the portions of the metal layer over the insulation layer, leaves the metal in the vias or contact openings and also leaves metal stringers on the sidewalls of the rectangular recess which then serve as fusible links (fuses) which are then connected to one or more metal lines thereafter formed on the insulation layer.

Abstract: A power sum computation unit for a Reed-Solomon decoder having r redundant symbols and in which a code word, R, has a first plurality (n) of symbols, each symbol having a plurality (m) of bits, including multiplier unit for multiplying in parallel M symbols by powers of a finite field element, .alpha., to obtain the power sums ##EQU2## The multiplier unit includes M multipliers for multiplying M symbols by powers of alpha, and memory delay including a latch, a random access memory, and a flipflop store symbols and sequentially provide M symbols to the multiplier unit. Exclusive OR gate selectively connects products from the multiplier unit and data input words to the memory delay. A counter is provided for the random access memory with the counter having a modulo number equal to one less than r/M, and the random access memory having a depth equal to one less than r/M.

Abstract: Via filling is enhanced by the techniques of 1) providing pillars immediately underneath semiconductor features, such as metal layer contacts (inter-connection points), and 2) polishing off excess via-filling material so that the via-filling plug is flush with the topmost insulating layer. The pillars are provided under every feature over which a via will be formed, so that an insulating layer surrounding the via will be thinner at the location of the feature. If necessary, polishing is continued to thin the insulating layer so that the plugs in initially selectively under-filled vias are made flush with the insulating layer. Method and apparatus are disclosed.

Abstract: A low dielectric insulation layer for an integrated circuit structure material, and a method of making same, are disclosed. The low dielectric constant insulation layer comprises a porous insulation layer, preferably sandwiched between non-porous upper and lower insulation layers. The presence of some gases such as air or an inert gas, or a vacuum, in the porous insulation material reduces the overall dielectric constant of the insulation material, thereby effectively reducing the capacitance of the structure. The porous insulation layer is formed by a chemical vapor deposition of a mixture of the insulation material and a second extractable material; and then subsequently selectively removing the second extractable material, thereby leaving behind a porous matrix of the insulation material, comprising the low dielectric constant insulation layer.

Abstract: A technique of gaining direct access to the inputs and outputs of an embedded microprocessor, otherwise buried behind additional logic, is disclosed. Multiplexers are provided for at least the embedded microprocessor inputs and outputs. In a test mode, the multiplexers connect device input and output pads directly to the embedded microprocessor inputs and outputs. In a normal operating mode, the multiplexers connect the additional logic to the input and output pads. Preferably, in order to standardize design criteria, multiplexers are provided on all of the inputs and outputs of the microprocessor which may become embedded behind additional logic. Additionally, it is possible in the test mode to control the additional logic to a well defined state. The invention provides a simple way to isolate the embedded microprocessor from the rest of the logic and test it thoroughly using test vectors that have already been developed for the stand-alone microprocessor.

Abstract: An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RE power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil.

Abstract: A technique is described which is generally directed to providing better delay determination for "nets" (equivalent circuits of point-to-point wiring) in integrated circuit designs on a semiconductor design automation system by adapting general RC-mesh networks representing those "nets" to efficient nodal matrix circuit solver techniques which are not inherently suited to general RC-mesh circuits. This is accomplished by "collapsing" the general RC-mesh network into an RC-tree equivalent circuit (network) which can be solved (simulated) by such nodal matrix techniques, thus determining node voltages and waveforms for each of the nodes of the simplified network. After solving the simplified network, the simplified network is re-expanded into its original RC-mesh form, determining the node voltages and waveforms at the re-expanded nodes thereof (eliminated during the collapse of the network) by applying simple circuit analysis techniques.

Abstract: A bias voltage generator for a voltage controlled oscillator is described. In one aspect of the invention, the bias voltage generator includes a biasing circuit to generate a minimum clock output at zero operating voltage, and includes a common mode rejection circuit for the BIASN and BIASP control voltages for the differential delay stages and a IDD test current shut-down circuit. A differential delay stage is described that includes a current source controlled by the BIASN and BIASP control voltages from the bias voltage generator, a resistance linearization circuit for current controlling transistors of a BIASN circuit, and a process variation circuit for compensating for temperature and process variations. The improved characteristics of the resulting VCO permits high frequency operation with a relatively low gain, relatively constant gain throughout operating voltage range, improved noise rejection capabilities, increased speed of delay stage, and reduced output signal swing.

Abstract: A process for interconnecting conductive substrates using an interposer having conductive plastic filled vias. The process comprises the steps of forcing conductive plastic material through an end of the through holes in the interposer so that raised globs of the conductive plastic extend from an opposite end of the through holes. Then conductive pads of a first substrate are aligned and pressed against the raised globs such that the conductive plastic protrudes as bumps from the forcing ends of the through holes. Finally, conductive pads of a second substrate are aligned and pressed against the bumps.

Abstract: Dopant distribution and activation in polysilicon is controlled by implanting electrically neutral atomic species which accumulate along polysilicon grain boundaries. Exemplary atomic species include noble gases and Group IV elements other than silicon.

Abstract: An interconnect bump is formed on a substrate structure of a flip-chip microelectronic integrated circuit by sputtering a metal base layer on the substrate, and then forming a copper standoff on the base layer. A solder cap is formed on the standoff having a peripheral portion that extends laterally external of the standoff. The peripheral portion of the cap is used as a self-aligned mask for a photolithographic step that results in removing the metal base layer except under the standoff and the cap. The cap has a lower melting point than the standoff. Heat is applied that is sufficient to cause the cap to melt over and coat the standoff and insufficient to cause the standoff to melt. The peripheral portions of the cap and the base layer that extend laterally external of the standoff cause the melted solder to form into a generally hourglass shape over the standoff due to surface tension.

Abstract: A CMOS tri-state driver circuit is capable of operating in a normal drive mode and in a high impedance mode. The circuit is powered by a 3 volt power supply, and drives an output terminal that is common to a TTL or other device that can apply a 5 volt output to the output terminal. The circuit includes a PMOS pull-up transistor and an NMOS pull-down transistor that are connected to the output terminal. The pull-up transistor is formed in and has a substrate terminal that is connected to an N-well. A switching transistor is controlled to connect the N-well to the power supply in drive mode to ensure stable and strong pull-up drive. A pass-gate transistor is biased to turn off the switching transistor when the voltage at the output terminal is higher than the power supply voltage in high impedance mode, causing the N-well to float. This prevents leakage current from flowing through a semiconductor junction from the output terminal to the N-well through the pull-up transistor.

Abstract: A lead frame for a multiplicity of terminals, in particular of large-scale integrated semiconductor chips, arranged in a very confined space and consisting of metallic conductors which converge from large outer spacings toward the terminals and can be connected to the terminals. The lead frame allows a high number of terminals with a low degree of spacing of the conductors to be produced. The conductors are produced in the outer region by a conventional production method and at their ends pointing toward the terminals by laser cutting of a uniformly metallic material.

Abstract: A fixture clamps a plurality of lids onto a multi-chip module (MCM) integrated circuit for adhesively attaching the lids to cover a plurality of cavities in the module in which chips or dies are mounted. The fixture includes a base plate which is formed with recesses in which the lids and the module are fittingly retained with the lids properly positioned relative to the module. A pressure plate is guided onto the module by a pin assembly and presses the module against the base plate. A plurality of spring loaded clamps have first jaws that engage with the lids through respective holes in the base plate and second jaws that engage with the pressure plate. The clamp thereby clamps the lids and the pressure plate to the module. The assembly including the module, lids, pressure plate and clamps is then removed from the base plate to enable curing of an adhesive that bonds the lids to the module, and frees the base plate for reuse.

Abstract: A removable heatsink assembly comprised of a heatsink unit and a heatspreader is provided. The heatsink unit has at least one fin and a coupling collar for radiating heat away from a packaged electronic device. The heatspreader includes a platform attached to an inner collar in thermal contact with the packaged electronic device. The platform has one or more tabs suitable for mating with one or more flanges located on the coupling collar of the heatsink unit. Coupling grooves within the flanges engage the platform of the heatspreader when the flanges are mated with the heatspreader tabs and the heatsink is turned. The heatsink can therefore be quickly and conveniently attached to or removed from the heatspreader. The present invention thus permits a wide variety of different heatsinks to be interchangeably used with a single heatspreader attached to an electronic device package.