Abstract: A method for changing the internal timing of a memory to allow adjustment of the access time of the memory to be faster or slower by increasing or decreasing internal margins of the memory (bit line separation), respectively, utilizes the memory compiler for setting the number of core cells used for driving a self time column of the memory.

Abstract: A memory cell having a transistor and a capacitor formed in a silicon substrate. The capacitor is formed with a lower electrically conductive plate etched in a projected surface area of the silicon substrate. The lower electrically conductive plate has at least one cross section in the shape of a vee, where the sides of the vee are disposed at an angle of about fifty-five degrees from a top surface of the silicon substrate. The surface area of the lower electrically conductive plate is about seventy-three percent larger than the projected surface area of the silicon substrate in which the lower electrically conductive plate is etched. A capacitor dielectric layer is formed of a first deposited dielectric layer, which is disposed adjacent the lower electrically conductive plate. A top electrically conductive plate is disposed adjacent the capacitor dielectric layer and opposite the lower electrically conductive plate.

Abstract: A method for restoring an eroded portion in an exposed upper surface cavity of a metallic element in a microelectronic device, where the metallic element has a hardness, and the metallic element is laterally surrounded by lateral elements, where at least one structure within the lateral elements has a hardness that is greater than the hardness of the metallic element. A precursor material is deposited in at least the cavity of the upper surface of the metallic element. The precursor material is deposited to a thickness that at least fills the cavity of the upper surface of the metallic element. The precursor material has a hardness that is less than the hardness of the at least one structure within the lateral elements. The precursor material is removed as necessary from the lateral elements, and the precursor material is planarized. Only the precursor material within the cavity of the upper surface of the metallic element is selectively replaced with a desired material.

Abstract: A device generally comprising a first circuit and a second circuit. The first circuit may be configured to (i) communicate with a host via a first bus (ii) using a small computer system interface (SCSI) protocol having a plurality of command descriptor blocks. The second circuit configured to (i) communicate with a remote device with a via a second bus, (ii) using an advanced technology attachment (ATA) protocol and (iii) translate a subset of the command descriptor blocks to the ATA protocol in application specific hardware.

Abstract: An apparatus comprising one or more user programmable registers and a circuit configured to compare a predetermined portion of one or more information packets with contents of said one or more user programmable registers.

Abstract: A method for storing data, comprising the steps of (A) receiving a stream of data, (B) storing the stream of data in a series of data clusters each comprising (i) a predecessor link, (ii) a data portion, and (iii) a successor link, where the predecessor links and successor links are configured to minimize seek time between the clusters during contiguous stream operations.

Abstract: An integrated circuit input buffer is provided, which includes a differential buffer, first and second average value circuits and a feedback amplifier. The input buffer is selectively operable in a differential operating mode and a single-ended operating mode. The differential amplifier has first and second buffer inputs and first and second buffer outputs. The first and second average value circuits have inputs coupled to the first and second buffer outputs, respectively. The feedback amplifier has first and second differential inputs coupled to outputs of the first and second average value circuits, respectively, and has an amplifier output. The amplifier output is coupled to the second buffer input when the input buffer is in the single-ended operating mode and is decoupled from the second buffer input when the input buffer is in the differential operating mode.

Abstract: A method of testing an integrated circuit. A first subset of test parameters is selected from a full set of test parameters designed to characterize given properties of the integrated circuit. A first subset of devices in the integrated circuit is tested with the first subset of test parameters, using different input levels to determine an acceptable low input level and an acceptable high input level for the first subset of test parameters on the first subset of devices. At least a second subset of devices in the integrated circuit is tested, where the second subset of devices is greater in number than the first subset of devices. The test is accomplished with at least a second subset of test parameters using the acceptable low input level and the acceptable high input level, to determine whether the integrated circuit functions properly at the acceptable low input level and the acceptable high input level.

Abstract: A circuit generally comprising a queue having an input and an output. The queue may be used to buffer memory requests generated by a processor to access a memory. The input may be configured to receive a plurality of memory requests. The memory requests may include a plurality of write requests and a plurality of read requests. The output may be configured to present the memory requests. The queue may be configured to (i) store the memory requests received at the input in an arrival order, (ii) rearrange the memory requests by propagating each read request ahead of each write request to establish a presentation order, and (iii) present the memory requests at the output in the presentation order.

Abstract: The invention may relate to a digital to analog converter. The digital to analog converter may comprise a plurality of controllable current sources and a control circuit. The plurality of controllable current sources may include a first and a second controllable current source. Each of the plurality of controllable current sources may be controllable between a first state and a second state. The control circuit may be coupled to the plurality of controllable current sources. The control circuit may be configured to control digital to analog conversion at a sampling interval. The control circuit may be configured to control a first state transition of the first controllable current source at a timing in the sampling interval different from a second state transition of the second controllable current source.

Abstract: An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to store input data in response to a write pointer and present output data in response to a read pointer. The second circuit may be configured to generate a control signal in response to the write pointer, the read pointer and a type of an information packet containing the input data.

Abstract: A method for forming shallow junctions in a substrate. The substrate is masked with a first mask to selectively cover first portions of the substrate and selectively expose second portions of the substrate. A first dopant is implanted substantially within a first depth zone through the second portions of the substrate. The first depth zone extends from a first depth to a second depth, and the first depth is shallower than the second depth. The substrate is annealed for a first time to form a noncontiguous buried insulating layer substantially within the first depth zone in the second portions of the substrate. The substrate is masked with a second mask to selectively cover third portions of the substrate and selectively expose fourth portions of the substrate. The fourth portions of the substrate at least partially overlap the second portions of the substrate. A second dopant is implanted substantially within a second depth zone through the fourth portions of the substrate.

Abstract: The present invention is directed to a method and system for expanding volume capacity. A method of expanding volume capacity on a storage device may include receiving a request to expand capacity of a target volume by a requested amount. A first hierarchy is queried for unused capacity, wherein if unused capacity is at least one of greater than or equal to the requested amount, the unused capacity is positioned within the target volume. If unused capacity is less than the requested amount, at least one successive hierarchy is queried to locate unused capacity, which is at least one of greater than or equal to the requested amount, the successive hierarchy located at a logic block address further from a target volume logic block address than a first hierarchy logic block address. The unused capacity is then positioned to be included with the target volume.

Abstract: A multi chip package, which includes a package substrate having a first side and an opposing second side. The first side is for receiving package electrical connections. Integrated circuits are electrically connected and structurally connected by their first sides to the second side of the package substrate. Heat spreaders are disposed adjacent the second side of the integrated circuits, where a single one of the heat spreaders is associated with a single one of the integrated circuits, but not all of the integrated circuits have an associated heat spreader. A single stiffener having a first side and an opposing second side covers all of the integrated circuits and heat spreaders, where the first side of the stiffener is disposed adjacent the second side of the heat spreaders.

Abstract: A bonding pad for an integrated circuit, having a conductive base layer. The conductive base layer has slots formed in it, where the slots extend completely through the conductive base layer. An insulating layer is disposed on top of the conductive base layer. The insulating layer protrudes into the slots of the conductive base layer. The insulating layer also includes a low k material. A conductive top layer is disposed on top of the insulating layer.

Abstract: The present invention includes methods for optimizing integrated circuit design by identifying a buffer tree in the integrated circuit design, the buffer tree having a plurality of vertices, each representing one of a buffer and an inverter, and also having branches, between the vertices, each representing an electrical connection. A plurality of optimization devices are applied in a random sequence to the vertices of the buffer tree. Such devices can include, for example, cell type modification; insertion of one buffer; insertion of several buffers; interchange of two grandchildren; making a grandchild into a child; making a child a grandchild; interchanging a child and a grandchild; eliminating two inverters; removing one buffer; removing more than one buffer; and removing two inverters.

Abstract: A multiport BIST method and apparatus therefor are disclosed. The multiport BIST is advantageously based on adapting a single port BIST method by dividing the memory into sections based on the number of ports and applying the single port BIST simultaneously through all ports simultaneously (inverting where appropriate), so as to test the sections in parallel. In one embodiment of the invention, an integrated circuit device comprises a multiport memory and a built-in self-test (BIST) unit that applies a first test pattern of read and write operations to a first port of the memory and applies a second test pattern of read and write operations to a second port of the memory. The addresses in the first test pattern are offset from addresses in the second test pattern by a fixed amount. The ports preferably have adjacent bit lines, and the data values conveyed by the first and second test patterns are preferably complementary.

Abstract: A long channel transistor and a shorter channel transistor operate in conjunction to drive an output node. The long channel device is first activated by a drive signal and the drive signal is input to a delay element that then activates the shorter channel device. By enabling the long channel device first, hot carrier injection effects are reduced. Employing two transistors that are sized to operate in different voltage ranges reduces surge current. The two-transistor configuration of the present invention occupies less area than a single long channel device with similar drive capabilities.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to present device information in response to one or more externally generated signals. The second circuit may be configured to store the device information. The third circuit may have (i) a first mode configured to program the device information into the second circuit and (ii) a second mode configured to transfer the device information from the second circuit to the first circuit.