Abstract: A process is disclosed for forming an integrated circuit structure characterized by formation of a combined dielectric layer and antireflective coating layer. The process comprises forming a layer of dielectric material over an integrated circuit structure, and treating the surface of the layer of dielectric material to form an antireflective coating (ARC) surface therein. When a layer of photoresist is then formed over the ARC surface, and the layer of photoresist is exposed to a pattern of radiation, the ARC surface improves the accuracy of the replication, in the photoresist layer, of the pattern of radiation. Preferably, the surface of the dielectric layer is treated with a plasma comprising ions of elements and/or compounds to form the ARC surface.

Abstract: A method for determining the signal constellation of a received signal establishes a moment based on each waveform, squares the moment, fourth powers the moment, divides the fourth power by the square to obtain a ratio, and compares the ratio to a threshold. If the ratio is less than threshold, the signal constellation corresponds to a first type, and if greater than the threshold, the signal constellation corresponds to a second type. The method can be generalized to a magnitude mean in place of a second moment.

Abstract: An integrated inductor is formed on an integrated circuit or other substrate. The inductor is formed of a stack of almost totally enclosed rings of conductive material in which each ring has a single gap. Vias connect adjacent rings on opposite sides of their gaps so as to form a coil shaped structure. The inductor has applications in filtering, in an oscillator, in an antenna, combined with an active detection circuit, combined with an electron source, in a microelectromechanial systems or MEMS, or the like. The inductor may be formed in a vertical orientation or in a horizontal orientation. Chemical mechanical polishing may be used for planarizing layers.

Abstract: A method of determining a desired connection path between a pair of points of a net separated by one or more blockages, while reducing path delays and ramp time violations and without placing buffers within any of the blockages.

Abstract: A method of forming a narrow isolation structure in a semiconducting substrate. The isolation structure is a trench that has a bottom and sidewalls, and that is to be filled with an isolating material. The isolating material has desired electrical properties and desired chemical properties, and is substantially reactively grown from the semiconducting substrate. A precursor material layer is formed on the bottom of the trench and on the sidewalls of the trench. The precursor material layer has electrical properties and chemical properties that are substantially similar to the desired electrical properties and the desired chemical properties of the isolating material. A substantial portion of the precursor material layer is removed from the bottom of the trench to expose the semiconducting substrate at the bottom of the trench, while leaving a substantial portion of the precursor material layer on the sidewalls of the trench.

Abstract: A netlist graph of an IC cell contains cell pin vertices, auxiliary vertices, and edges between vertices having a length. A clock shift SH(V) is assigned to each auxiliary vertex so that for any two auxiliary vertices, a difference between the clock shift of the two auxiliary vertices is no greater than a design time of the two auxiliary vertices. The clock shift is assigned such that SH(V1)+DELAY(V1,V2)−SH(V2)≦f·BOUND(V1,V2), where SH(V1) and SH(V2) are the clock shift of first and second auxiliary vertices, DELAY(V1,V2) is a maximal delay of the path between the first and second auxiliary vertices, f is a minimize constant, and BOUND(V1,V2) is a timing restriction of the first and second auxiliary vertices.

Abstract: In an integrated circuit, a voltage level shifter transitions an input signal at a first voltage level to an output signal at a second voltage level. The voltage level shifter generally includes switching elements, such as transistors, that control switching the output signal between logical zero and logical one values. The switching elements have a maximum voltage below which they can operate. The maximum voltage is less than the second voltage level. The voltage across the switching elements is limited to less than the maximum voltage.

Abstract: A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effecting a second portion of the surface of the monolithic semiconducting substrate. An insulator precursor species is implanted beneath the surface of the recessed first portion of the monolithic semiconducting substrate, and a trench is etched around the implanted and recessed first portion of the monolithic semiconducting substrate. The insulator precursor species is activated to form an insulator layer beneath the surface of the recessed first portion of the monolithic semiconducting substrate. The semiconductor on insulator structure is formed in the first portion of the monolithic semiconducting substrate, and the bulk semiconductor structure is formed in the second portion of the monolithic semiconducting substrate.

Abstract: To reduce FIFO access cycles across a system bus in a multi-processor system in which two processors communicate across a system bus through a FIFO, two separate FIFO descriptors are provided. The first descriptor is maintained by the processor located on-board with the FIFO, and the second descriptor is maintained by an off-board processor which communicates with the FIFO across the bus. When one processor performs a FIFO operation, the processor updates the other processor's descriptor via a memory access across the bus. Additionally, one module passes credits to the other to indicate that the latter has permission to perform a plurality of FIFO operations consecutively. In one embodiment a special non-valid data value is used to indicate an empty FIFO position.

Abstract: Methods and structure in a memory controller for sequencing memory device page activation commands to improve memory bandwidth utilization. In a synchronous memory device such as SDRAM or DDR SDRAM, an “activate” command precedes a corresponding “read” or “write” command to ensure that the page or row to be accessed by the “read” or “write” is available (“open”) for access. Latency periods between the activation of the page and the readiness ofthe page for the corresponding read or write command are heretofore filled withnop commands. The present invention looks ahead for subsequent read and write commands and inserts activation commands (hidden activates) in nop command periods of the SDRAM device to prepare a page in another bank for a read or write operation to follow. This sequencing of activate commands overlaps the required latency with current read or write burst operations.

Abstract: A polyphase amplitude detector for detecting the amplitude of a polyphase signal. The polyphase amplitude detector includes means for generating differential pair signals. The differential pair signals are buffered and amplified and then AC coupled to the amplitude detector. The amplitude detector detects the amplitude of each phase of the polyphase signal and generates output signals which are used to control the amplitude of the polyphase signal.

Abstract: A method and composition for a composite spacer with low overlapped capacitance includes a low-k dielectric spacer layer. A first spacer is deposited on a partially formed semiconductor device having a gate oxide stack, followed by a low dielectric constant spacer layer. Anisotropic etching of the combined layers form spacers surrounding the gate oxide stack.

Abstract: A method for composing a dielectric layer within an interconnect structure of a multilayer semiconductor device is disclosed. A layer of silica precursor material is first deposited on a silicon substrate. Without affecting its structure and porosity, the layer of silica precursor material is then dried; and the layer of silica precursor material becomes porous silica film. Subsequently, a protective layer, such as parylene, is deposited on top of the dried porous silica film. The thickness of the protective layer should be greater than the peak-valley planarization requirements of the silicon substrate surface. As a result, a composite porous silica film, which services as a dielectric layer within an interconnect structure, is formed. This composite porous silica film has a relatively low dielectric constant and is able to withstand damage from a standard CMP procedure.

Abstract: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

Abstract: A method of integrated circuit design and a circuit design tool. Critical paths are identified in an integrated circuit design. Identified edges are weighted. Edges are assigned a higher weight responsive to the number of critical paths in which they are included. A net criticality is assigned to each weighted edge based upon the edge's weight. Cells are re-placed and wired according to net criticality.

Abstract: A method of forming a narrow isolation structure in a semiconducting substrate. The isolation structure is a trench that has a bottom and sidewalls, and that is to be filled with an isolating material. The isolating material has desired electrical properties and desired chemical properties, and is substantially reactively grown from the semiconducting substrate. A precursor material layer is formed on the bottom of the trench and on the sidewalls of the trench. The precursor material layer has electrical properties and chemical properties that are substantially similar to the desired electrical properties and the desired chemical properties of the isolating material. A substantial portion of the precursor material layer is removed from the bottom of the trench to expose the semiconducting substrate at the bottom of the trench, while leaving a substantial portion of the precursor material layer on the sidewalls of the trench.

Abstract: A mask is designed for use in a photolithographic process to offset effects of light diffraction. At least one region having a length along each edge of a mask feature is defined. Error values at selected points on the mask are derived from an aerial image of the mask features and a target light intensity measured during IC fabrication process development. A matrix is derived representing the contributions of light amplitude due to movement of each region in a direction normal to the region. The amount of movement of each region is based on least-squares fitting the linear expressions in the matrix to the error values. The amount of movement may be adjusted for movement of an adjacent region.

Abstract: A method of estimating the number of available transit connections of a hardmac includes the steps of calculating a total layer capacity of the hardmac; calculating a number of available transit connections from the total layer capacity; estimating a number of transit connections used for internal routing; calculating an absolute porosity of the hardmac from the number of available transit connections and the number of transit connections used for internal routing; calculating a relative porosity of the hardmac from the total metal layer capacity and the absolute porosity; and generating as output the relative porosity of the hardmac as an estimated porosity.

Abstract: An apparatus comprising a one or more memory circuits and an uncompress circuit. The one or more memory circuits may be configured to (a) store (i) a number of compressed code words and (ii) a number of delta words and (b) provide random access to the compressed code words in response to an address. The compressed code words may be losslessly compressed in response to (i) a number of uncompressed code words and (ii) the delta words. The delta words generally comprise bit strings that may be configured to minimize a size of the one or more memory circuits when deleted from the uncompressed code words. The uncompress circuit may be configured to losslessly uncompress the compressed code words in response to the delta words.

Abstract: A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.