Abstract: A semiconductor integrated circuit is capable of filling the need for more memory space through the effective use of an already-designed core block. A block (1) including a CPU, an array (4a) of a plurality of bonding pads, and RAMs (21a, 22a) which are first memories located on the same side of the array (4a) as the block (1) are already designed. The requirement for increased memory capacity can be filled with ease by the addition of RAMs (24a, 25a) which are second memories located on the opposite side of the array (4a) from the block (1). Since the second memories are different in physical configuration from the first memories, it is easy to design a physical configuration to achieve required memory capacity outside a core block (8a) within a single-chip microcomputer (9c).

Abstract: A process for forming a capacitive structure and a fuse structure in an integrated circuit device includes forming a first capacitor plate and first and second fuse electrodes in a first dielectric layer of the device. In a second dielectric layer overlying the first dielectric layer, a capacitor dielectric section overlying the first capacitor plate, and a fuse barrier section overlying and between the first and second fuse electrodes are formed simultaneously. In a conductive layer overlying the second dielectric layer, a second capacitor plate overlying the capacitor dielectric section, and a fuse overlying the fuse barrier section and contacting the first and second fuse electrodes are formed simultaneously. The capacitor dielectric section and the fuse barrier section may be defined simultaneously by selectively removing portions of the first dielectric layer during a single etching step.

Abstract: Provided is an analog-to-digital converter that includes a first analog-to-digital conversion (ADC) stage connected to input a first analog signal and a second ADC stage connected to input a second analog signal produced by the first ADC stage. A tone detector enables the second ADC stage from a disabled state when a first condition indicating the presence of a high-level interference tone is satisfied and disables the second ADC stage from an enabled state when a second condition indicating the absence of a high-level interference tone is satisfied.

Abstract: A capping layer of an insulator such as silicon nitride is formed over horizontally closely spaced apart metal lines on an oxide layer of an integrated circuit structure formed on a semiconductor substrate. Low k silicon oxide dielectric material which exhibits void-free deposition properties in high aspect ratio regions between the closely spaced apart metal lines is then deposited over and between the metal lines and over the silicon nitride caps on the metal lines. After the formation of such low k silicon oxide dielectric material between the closely spaced apart metal lines and the over silicon nitride caps thereon, a second layer of silicon nitride is deposited over the layer of low k silicon oxide dielectric material.

Abstract: A method for eliminating scan hold time failures of a scan chain. The method uses information resulting from the distribution of a clock throughout an integrated circuit. In particular, a scan chain is reordered according to the results of the distribution of the clock signal. The distribution of the clock signal provides groups of sequential circuit elements that form the scan chain. The method also includes reordering the sequential circuit elements within at least one group according to a clock skew of the clock signal within the at least one group. The method further includes ordering the groups according to a clock skew of the clock signal between the groups.

Abstract: A process for forming a non-porous dielectric diffusion barrier layer on etched via and trench sidewall surfaces in a layer of porous low k dielectric material comprises exposing such etched surfaces to a plasma formed from one or more gases such as, for example, O2; H2; Ar; He; SiH4; NH3; N2; CHxFy, where x=1-3 and y=4-y; H2O; and mixtures of same, for a period of time sufficient to form from about 1 nanometer (nm) to about 20 nm of the non-porous dielectric diffusion barrier layer which prevents adsorption of moisture and other process gases into the layer of porous low k dielectric material, and prevents degassing from the porous low k dielectric material during subsequent processing.

Abstract: A controller generally comprising a DMA engine, a processor, and a circuit. The DMA engine may be configured to copy from a system memory to a local memory. The processor may be configured to process a message written in the local memory. The circuit may operate independently of the processor. The circuit may be configured to (i) monitor writes to the local memory for the message having a first pointer and (ii) program the DMA engine to copy a first buffer identified by the first pointer in response to the first pointer having a non-null value.

Abstract: An asynchronous transfer mode (ATM) digital electronic communication system includes an ATM communication system interconnection and termination unit (ATMCSI/TU). This ATMCSI/TU includes both a programmable microprocessor and several hardware-implemented coprocessors. The hardware-implemented coprocessors are under control of the microprocessor, and are dedicated to the performing of repetitive tasks. Thus, the microprocessor is freed to perform supervisory tasks in the ATM in addition to performing tasks associated with actual communication of digital data packages (i.e., CS-PDU's) in the ATM system. Thus, the APU is freed from doing repetitive data manipulation tasks, while these tasks are performed by one or more hardware-implemented coprocessors using memory mapped data structures and linked lists of data.

Abstract: Constant pins are determined in a combinational circuit by associating an input of a combinational circuit with a first variable and a second variable, with the second variable being the complement of the first variable. For a first logical cell interconnected to such input, a first mathematical representation and a second mathematical representation are computed. The first mathematical representation is a function of the operation of the first logical cell and a function of the first variable, and the second mathematical representation is a function of the operation of the first logical cell and a function of the second variable. A determination is then made as to whether one of the first and second mathematical representations is equal to a constant.

Abstract: An apparatus for detecting failures in electrical connections between an integrated circuit package substrate and a circuit board. The substrate has substrate electrical contacts that are electrically connected one to another in first sets in a first region of the substrate. The circuit board has circuit board electrical contacts that are electrically connected one to another in second sets in a second region of the circuit board. The substrate electrical contacts align with and make electrical contact with the circuit board electrical contacts. The first region of the substrate aligns with the second region of the circuit board when the substrate electrical contacts make electrical contact with the circuit board electrical contacts. The first sets of substrate electrical contacts form chains of electrical contacts with the second sets of circuit board electrical contacts. The chains of electrical contacts loop back and forth electrically between the substrate and the circuit board.

Abstract: A method and system for allocating and freeing memory in an electronic system allocates available memory by including at least one or more flags that indicate the size and status of the allocated segment in the same area in which the segment is allocated. A free portion in the available memory is searched such that the free portion is sufficient to accommodate the requested segment. Upon finding a free portion, a new segment is created in the free portion where the new segment includes an allocated segment equal in size to the requested segment and further includes a segment area that accommodates at least one flag of the allocated segment such that the segment area is adjacent to the allocated segment. At least one flag of the allocated segment is set, and may include a size flag or a status flag that indicates whether the allocated segment is occupied and whether the allocated segment is the last segment.

Abstract: A quick loader and associated method for a surgical suturing instrument of the type having at least one ferrule receiving chamber and a suture receiving passage, includes a loader body having a recess formed therein for receiving an end of a surgical suturing instrument, a seat adjacent the recess for releasably holding at least one ferrule-tipped end of a suture in the seat, the seat being aligned and adjacent to a ferrule receiving chamber in the suturing instrument when the instrument is positioned in the recess, for permitting the transfer of the ferrules from the seat on the loader into the ferrule receiving chamber.

Abstract: An integrated circuit that includes an improved architecture that reduces the interface between different blocks by minimizing the wire connections between the two blocks. Specifically, the two blocks are structured to transfer data between the two blocks using only the data bus and a common clock, thus eliminating the need for an address bus. Each block contains data registers used for storing data. The data registers in one block correspond to the registers in the second block, with each block being aware of the memory structure of the other block. When one block needs data from the data registers of the other block, it requests the data and the sending block places the contents of its data registers on the bus sequentially. The requesting block reads the data from the data bus at the appropriate time by counting the number of clock cycles from the time that the data was requested.

Abstract: A metal wire for a feature of a cell is extended using a grid based on a metal layer of the cell. Each grid element is assigned an “F” designator representing the metal wire being extended, an “E” designator representing blockages to extension of the metal wire, such as metal wires of other features, or a “U” designator representing grid elements that are neither F-designated, nor E-designated grid elements. U-designated grid elements that are neighbors to E-designated grid elements are identified. A minimum length path is defined through the U-designated grid elements that are not neighbors to E-designated grid elements between the cell boundary and a F-designated grid element.

Abstract: The present invention selects parts of an integrated circuit description for resynthesis and then prepares those parts for resynthesis. Initially, a resynthesis goal is input, with the resynthesis goal having been selected from a set of possible resynthesis goals. Plural buffer and/or logic trees in the integrated circuit description are then selected based on the resynthesis goal, and information for each of the selected trees is obtained and stored. The tree information includes: (i) a description of each tree cell, including cell types, cell coordinates, and flips and angles of the tree cell, (ii) a description of each input net, (iii) a signal arrival time for each input net as a function of a capacity of such input net, (iv) coordinates of each pin driving each input net, and (v) a maximum capacity of each input net that will prevent such input net from having a timing violation.

Abstract: A transconductance continuous time filter circuit comprising a first differential pair of transistors (328 and 330), and at least one pair of tuning transistors (326 and 332). Each of the tuning transistors (326 and 332) may be coupled via a respective switching transistor (346 and 348) to a supply line, with the gate electrodes of the switching transistors (346 and 348) being coupled to a control line. The switching transistors (346 and 348) may be turned on or off to couple or uncouple the tuning transistors (326 and 332) from the first differential pair of transistors. The effective width of the differential pair may also be varied such that the transconductance and hence the cut-off frequency of the filter circuit.

Abstract: The present invention is a method and apparatus for applying one-dimensional proximity correction to a piece of a mask pattern, by segmenting a first piece of a mask pattern with horizontal dividing lines into a plurality of segments, segmenting a second piece of said mask pattern with said horizontal dividing lines into a second plurality of segments, and applying proximity correction to a first segment from said first plurality of segments taking into consideration a second segment from said second plurality of segments.

Abstract: The present invention discloses a novel method and apparatus for making a jitter transfer function of a phase-locked loop independent from the data transition density. The present invention is further discloses a phase-locked loop which has a loop bandwidth and a loop gain in the passband which are both independent from the received data patterns. By making the loop bandwidth independent of the received data pattern, the noise filtering performance of the phase-locked loop may be optimized.

Abstract: A method for performing timing driven interconnect estimation analysis is disclosed. The method includes collecting data only from timing critical paths of at least one previous design, and generating statistical data based on a net length distribution of the timing critical paths. A wire load model is then generated for a new design from the statistical data.

Abstract: A method of testing an integrated circuit. The thermal energy of the integrated circuit to adjusted to a first temperature, and a first set of electrical characteristics of the integrated circuit are sensed at the first temperature. The first set of electrical characteristics are recorded in association with an identifier for the integrated circuit. The thermal energy of the integrated circuit is adjusted to a second temperature, and a second set of electrical characteristics of the integrated circuit are sensed at the second temperature. The electrical characteristics of the second set correspond to the electrical characteristics of the first set. The second set of electrical characteristics are also recorded in association with the identifier for the integrated circuit.