Abstract: A data frame synchronizer identifies frame boundaries in a serial data stream formed of a set of multi-bit frames. Selected frames in the set have a frame boundary bit at a specified location within the frame, and the frame boundary bits together form a predetermined pattern. The frame synchronizer includes a memory array having a memory data input, a memory data output and a plurality of rows and columns for storing the serial data stream. A memory control circuit is coupled to the memory array for writing successive bits of the serial data stream into the memory array through the memory data input in a sequence such that all of the frame boundary bits align in one of the rows. As each bit is being written into the memory array, the memory control circuit reads the corresponding row through the data output. A pattern detector is coupled to the memory data output for comparing the row with a predetermined pattern.

Abstract: A semiconductor memory device is constituted such that, when a first wiring layer provides a bit line of a first common complementary data line pair and a third wiring layer provides a bit line of a second common complementary data line pair, a second wiring layer makes an overlapped area between the bit line and the bit bar line of the second common complementary dada line pair equal to the bit line of the first common complementary data line pair and also an overlapped area between the bit line and the bit bar line of the first common complementary data line pair equal to the bit line of the second common complementary data line pair.

Abstract: A memory device including a plurality of memory cells, a plurality of bit lines, a plurality of bit line sense amplifiers, a plurality of column port gates, and a column decoder connected to a multiple of five column port gates. Each of the bit line sense amplifiers is connected to at least one of the bit lines and to at least one of the memory cells. Each of the column port gates is connected to at least one of the bit line sense amplifiers. The column decoder provides signals to the column port gates to which it is connected to select corresponding bit lines connected to the column port gates.

Abstract: A system and method for estimating motion vectors between frames of a video sequence which operates with reduced memory loading latency according to the present embodiment. The motion estimation system includes a motion port pixel processing array according to the present embodiment. The processing array includes a reference block memory array for storing a reference block and a candidate block memory array for storing a candidate block. According to the present embodiment, each of the reference block memory array and candidate block memory array are configured with dual ports to a reference block memory and a search window memory. Each of the reference block memory array and candidate block memory array are further configured to allow dual port loading during the entire initialization sequence, when one or more of either a reference block or candidate block is being loaded into the respective memory array.

Abstract: An on-screen display unit solves a problem of a conventional on-screen display unit. The conventional unit cannot implement a moving display of an image with a small amount hardware. The novel on-screen display unit includes a first memory for storing the image code of each of images to be displayed. A second memory stores font data of the images. A latch circuit stores information indicating one of a moving display ON mode and a moving display OFF mode. A line memory stores at least one horizontal line image. An image data generating unit generates image data to be stored in the line memory. A selector selects output data from the second memory when the latch circuit stores information indicating the moving display OFF mode and selects output data from the line memory when the latch circuit stores information indicating the moving display ON mode.

Abstract: A semiconductor package having positioned therein a protection layer which protects the integrated circuit chip from electrostatic discharge (ESD) damage. The protection layer is made of a material that has at steady state a high electrical resistance, but when a high ESD potential is applied to it, it becomes highly conductive. A preferred material is SurgX.TM., which is a polymer. The layer is positioned to shunt the potential away from the chip, and can be positioned operatively between a signal lead and a power plane or between different signal leads. That is, the protection layer can be sandwiched between the lead and the conductive member, or the lead can be within the layer. Another preferred construction incorporates the protection material in a tape construction as a thin layer sandwiched between and bonded to a layer of leads and a ground plane.

Abstract: A single chip integrated remote access processor circuit has a plurality of communication interface units, including a local area network (LAN) interface unit, a first multi-protocol serial wide area network (SWAN) interface unit, a telephony coder-decoder interface unit and a peripheral component interface (PCI) unit. A data routing control circuit is coupled to the plurality of communication interface units for controlling data transfer between the interface units.

Abstract: A method for fabricating a semiconductor device in a substrate. Active regions are defined within the substrate using a thin oxide layer and a silicon nitride layer with portions of the silicon nitride layer being etched away to expose the thin oxide layer. Field oxide regions are formed over regions other than the defined active regions. These field oxide regions are located between the active regions. The remaining portions of the silicon nitride layer and the thin oxide layer are removed and a sacrificial oxide layer is then grown on the surfaces of the active regions. A first mask, a N-well mask, is formed for implanting N-type dopants. A buried layer implanted using P-type dopants with the first mask in place. Thereafter, the N-well regions are implanted. The first mask is removed and a second mask is formed to define regions for implanting P-well regions using P-type dopants. The P-well regions are implanted using P-type dopants.

Abstract: Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.

Abstract: An output driver circuit includes first and second supply terminals, first and second complementary data terminals and an output terminal. A pull-up transistor is coupled between the first supply terminal and the output terminal and has a first control terminal. A pull-down transistor is coupled between the second supply terminal and the output terminal and has a second control terminal which is coupled to the second data terminal. A voltage level shifting circuit is coupled between the first complementary data terminal and the first control terminal and is biased between the first supply terminal and a voltage-controlled node. A voltage regulator is coupled to the voltage-controlled node for regulating the node at a selected voltage.

Abstract: A method and apparatus for efficiently posting entries to a queue within the data processing system. Entries are posted by first processor with the entries being handled by second processor in the data processing system. The interrupt state associated with the queue is checked by the first processor. If the interrupt state is clear, then the entry is posted to the queue. This interrupt state is cleared only when all entries have been cleared from the queue by the second processor. In this manner, an efficient posting of entries to the queue may be accomplished.

Abstract: A retrograde well in a CMOS device is formed by using a low energy ion implanter. Dopant atoms are implanted into a bare surface of the device's substrate, in a direction that is orthogonal to the surface of the substrate (for a substrate having a <100> orientation). The well implant can be performed at an energy below 220 keV. Chained implants for a punch-through barrier in the retrograde well can be performed after the well implant. When the substrate is annealed, the punch-through barrier is activated at the same time as the retrograde well.

Abstract: An adaptive error detection and correction apparatus for an Asynchronous Transfer Mode (ATM) network device comprises a sensing unit for sensing a congestion condition in the ATM network and a global pacing rate unit for adaptively reducing a maximum allowable transmission ratio of ATM cells containing information to idle ATM cells in response to a sensed congestion condition. A processor stores a number corresponding to a relatively high maximum allowable transmission ratio in the global pacing rate register in the absence of a sensed congestion condition, and stores a number corresponding to a relatively low maximum allowable transmission ratio in the global pacing rate register in response to a sensed congestion condition. A controller adjusts the maximum allowable transmission ratio in accordance with the number stored in the global pacing rate register.

Abstract: The capacity of a cache memory is substantially reduced over that required for a multi-chip distributed shared memory (DSM) implementation to enable the cache memory, a main memory, a processor and requisite logic and control circuitry to fit on a single integrated circuit chip. The increased cache miss rate created by the reduced cache memory capacity is compensated for by the reduced cache miss resolution period resulting from integrating the main memory and processor on the single chip. The reduced cache miss resolution period enables the processor clock rate to be substantially increased, so that a processor having a simple functionality such as a reduced instruction set computer (RISC) processor can be utilized and still provide the required processing speed.

Abstract: A substrate holder assembly for retaining a substrate during chemical mechanical polishing is described. The substrate holder assembly includes: (i) a backing plate including a contact surface adapted for supporting components of the substrate holder assembly and the substrate; (ii) a shim positioned adjacent the contact surface of the backing plate for applying pressure on the substrate during chemical-mechanical polishing; and (iii) a carrier film disposed adjacent the shim such that at least a portion of the carrier film adjacent the shim protrudes outwardly.

Abstract: A method in a semiconductor process for forming a layer of a selected compound on a substrate of a semiconductor device. A layer of titanium is formed on the substrate as a sacrificial layer. The layer of titanium is reduced using a gaseous form of a fluorine containing compound in which the fluorine containing compound includes the selected compound that is to be formed on the substrate of the semiconductor device.

Abstract: An integrated circuit includes a core region and an input-output (I/O) region which has an I/O slot and a voltage supply slot. First and second voltage supply buses and a bias voltage bus extend along the I/O region through the I/O slot and the voltage supply slot. A bias voltage generator is fabricated in the voltage supply slot and is electrically coupled between the first and second voltage supply buses. The bias voltage generator has a bias voltage output which is electrically coupled to the bias voltage bus. A buffer is fabricated in the I/O slot for interfacing with the core region. The buffer includes a bias voltage input which is electrically coupled to the bias voltage bus.

Abstract: An application specific integrated circuit having an embedded microprocessor and core including a memory array, self tests at full operational speed utilizing the computational power of the embedded microprocessor for deterministic testing performed by core specific test algorithms implemented in the assembly code of the embedded microprocessor.

Abstract: A system for optimizing placement of a cell on a surface of a semiconductor chip is disclosed herein. The cells may belong to nets and may belong to neighborhoods. The system initially calculates affinities based on repositioning the cell. The system then combines affinities and repositions cells based on these combined affinities. The system then computes a cost function and repeats the combining, repositioning, and computing functions a predetermined number of times.

Abstract: The invention provides exemplary systems and methods for releasably securing a data storage device within a data storage system. In one exemplary embodiment, the invention comprises a cabinet which defines an enclosure. The data storage device is removably held within the enclosure. A cover is further provided which comprises a pivot end and a latch end. The pivot end is pivotally attached to the data storage device so that pivoting of the cover will release the data storage device at least partially from the enclosure. A cover latch is operably attached to the latch end, with the cover latch engaging the data storage device to prevent pivoting of the cover when the cover is closed.