Abstract: Provided is a light-emitting diode (LED) device that includes a segmented edge contact. A first set of independent contacts connected to a first doped layer and a set of edge contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, allowing differing corresponding via currents to be applied to the first doped layer through the vias independent of one another.

Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.

Abstract: A packaging structure for a light emitter pixel array includes a plurality of pixels, with at least some pixels laterally separated from each other with a pixel light confinement structure. An inorganic substrate having a top redistribution layer is attached to the plurality of pixels and at least one through silicon via containing an electrical conductor is defined to pass through the inorganic substrate and support an electrical coupling with the top redistribution layer.

Abstract: Circuit boards, LED lighting systems and methods of manufacture are described. A circuit board includes a ceramic carrier and a body on the ceramic carrier. The body includes dielectric layers and slots formed completely through a thickness of the dielectric layers. The slots are filled with a dielectric material. A conductive pad is provided on a surface of each of the slots opposite the ceramic carrier.

Abstract: An adaptive lighting system comprises an array of independently controllable LEDs, and a metalens positioned to collimate, focus, or otherwise redirect light emitted by the array of LEDs. The adaptive lighting system may optionally include a pre-collimator positioned in the optical path between the array of LEDs and the metalens.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: An LED array assembly may include a hybridized device and a flexible PCB. The hybridized device may include a micro-LED array mounted on a driver IC. The driver IC may include driver IC contact pads on a top surface of the driver IC. The flexible PCB may have a bottom surface, first contact pads on the bottom surface, second contact pads on the bottom surface, and contact bridges. Each of the contact bridges extends from one of the first contact pads to one of the second contact pads. Each of the driver IC contact pads is bonded to a corresponding one of the first contact pads of the flexible PCB.

Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

Abstract: A light-emitting diode (LED) package and method of manufacture are described. An LED package includes an LED die that has a top surface, a bottom surface and side surfaces. The package further includes a wavelength converting element having a top surface, a bottom surface and side surfaces. The bottom surface of the wavelength converting element is adjacent the top surface of the LED die. The package further includes a light reflecting coating surrounding at least the side surfaces of both the LED die and the wavelength converting element. The light reflective coating has at a least a portion that extends above the top surface of the wavelength converting element.

Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.

Abstract: A packaging structure for a light emitter pixel array includes a plurality of pixels, with at least some pixels laterally separated from each other with a pixel light confinement structure. An inorganic substrate having a top redistribution layer is attached to the plurality of pixels and at least one through silicon via containing an electrical conductor is defined to pass through the inorganic substrate and support an electrical coupling with the top redistribution layer.

Abstract: A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

Abstract: An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.

Abstract: A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.

Abstract: Light-emitting devices are described herein. A device includes a hybridized device having a top surface and a bottom surface and a packaging substrate comprising a metal inlay in an opening on a top surface of the packaging substrate. The metal inlay is thermally coupled to the bottom surface of the hybridized device. The device also includes conductive contacts on the top surface of the packaging substrate and conductive connectors electrically coupled between the top surface of the hybridized device and the top surface of the packaging substrate.

Abstract: A vehicle comprises a first lighting assembly disposed to the left of a longitudinal axis of the vehicle and comprising a first array of independently operable light emitting diodes and a first projection lens arranged to form a front left light beam for the vehicle from light output from the first array of light emitting diodes, a second lighting assembly disposed to the right of the longitudinal axis of the vehicle and comprising a second array of independently operable light emitting diodes and a second projection lens arranged to form a front right light beam for the vehicle from the second array of light emitting diodes, and a controller configured to control activation of the light emitting diodes in the first array of light emitting diodes to adjust an angle between the front left light beam and the longitudinal axis of the vehicle and to control activation of the light emitting diodes in the second array of light emitting diodes to adjust an angle between the front right light beam and the longitudina

Abstract: A method includes depositing a layer comprising a photoinitiator and a curable material onto a surface and applying a nanoimprint mold on the layer of curable material to form a mesh comprising intersecting walls defining cavities. After applying the nanoimprint mold, the mesh is illuminated with light causing decarboxylation of the photoinitiator to initiate curing of the curable material. After curing the curable material, the nanoimprint mold is removed and a wavelength converting material is deposited in the cavities to form an array of wavelength converting pixels.

Abstract: A polymer dispersion layer is formed on a substrate or semiconductor light-emitting devices on the substrate. After forming the polymer dispersion layer, drying and curing the polymer dispersion layer forms a cured polymer layer. After curing and drying, with the cured polymer layer being present on only selected, masked areas of the substrate or light-emitting devices, and with other areas of the substrate or light-emitting devices lacking the cured polymer layer and remaining exposed, a material layer is formed on at least the exposed areas of the substrate or light-emitting devices. After forming the material layer, the cured polymer layer is removed from the masked areas, leaving the material layer on the exposed areas.