Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Abstract: A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?C. Active-layer output light incident on the redirection layer at an incidence angle greater than ?C is redirected to propagate toward the front surface at an incidence angle that is less than ?C. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?C, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: A flexible light emitting diode (LED) circuit having a first layer, the first layer including a conductive material configured to connect to an LED die, a second layer, the second layer including an electrically insulating material, and a third layer positioned between the first and second layer, the third layer having a first terminal extended electrically connecting tab that extends outward beyond the first layer and the second layer.

Abstract: A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.

Abstract: A wavelength converting layer may have a glass or a silicon porous support structure. The wavelength converting layer may also have a cured portion of wavelength converting particles and a binder filling the porous glass or silicon support structure.

Abstract: Described is a CMOS power plane including interleaving contact areas, alternating Vled and Vcat contact areas, on at least two long sides of the µLED display area. By this way, Vled and cathode current are injected uniformly along the four sides of the µLED display panel. A large cathode current distribution ring on Vled and Vcat circuits is used to distribute the current along the four sides of the panel. The current distribution ring surrounds a pixel die area. An insulated area may be included on the cathode current redistribution ring adjacent one of the of µbumps.

Abstract: Systems, devices, and methods are disclosed in which one or more light sources, a detector, a processor and a controller are configured such that light from the one or more light sources improves the ability of a human or automated motor vehicle driver to identify and avoid pedestrians. The one or more light sources may provide spot illumination to moving objects or pedestrians on a road surface, with the spot illumination following the moving object or pedestrians along the portion of the road surface. The one or more light sources may project images on the ground or on other surfaces. The light source may be carried by a pedestrian or on personal transport used by a pedestrian. The light sources may be stationary and provide lighting for a pedestrian street crossing.

Abstract: Systems, devices, and methods are disclosed in which one or more light sources, a detector, a processor and a controller are configured such that light from the one or more light sources improves the ability of a human or automated motor vehicle driver to identify and avoid pedestrians. The one or more light sources may provide spot illumination to moving objects or pedestrians on a road surface, with the spot illumination following the moving object or pedestrians along the portion of the road surface. The one or more light sources may project images on the ground or on other surfaces. The light source may be carried by a pedestrian or on personal transport used by a pedestrian. The light sources may be stationary and provide lighting for a pedestrian street crossing.

Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.

Abstract: A lighting device is disclosed that includes a plurality of light emitting diodes arranged in an array, a plurality of trenches disposed between and optically isolating the light emitting diodes, and a patterned converter layer disposed over an array surface formed by light emitting surfaces of the light emitting diodes and upper surfaces of the trenches, the patterned converter layers including a first region having a first converter and a second region having a second converter different from the first converter, the first region and second region disposed over different areas of the array surface.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: Methods of manufacturing a system are described. A method includes attaching a silicon backplane to a carrier and molding the silicon backplane on the carrier such that a molding material surrounds side surfaces of the silicon backplane to form a structure comprising a substrate with an embedded silicon backplane. The structure has a first surface opposite the carrier, a second surface adjacent the carrier, and side surfaces. At least one via is formed through the molding material and filled with a metal material. A metal layer is formed on a central region of the first surface of the structure. Redistribution layers are formed on the first surface of the structure adjacent the metal layer.

Abstract: An apparatus can include a lens that can shape light emerging from a light emitting diode (LED). The emergent light from the LED can be substantially centered around an LED axis. An incident surface of the lens can be positioned to face the LED. The incident surface can include a concave portion. The concave portion can be substantially smooth, so as not to substantially scatter light that strikes the concave portion. The concave portion can be substantially centered around a concave portion axis that is non-coaxial with the LED axis. The incident surface can include a scattering portion, positioned away from the concave portion, which can be textured so as to scatter light that strikes the scattering portion. An exiting surface of the lens can optionally include a generally planar portion that at least partially surrounds a substantially smooth convex portion.

Abstract: Systems, devices, and methods are disclosed in which one or more light sources, a detector, a processor and a controller are configured such that light from the one or more light sources improves the ability of a human or automated motor vehicle driver to identify and avoid pedestrians. The one or more light sources may provide spot illumination to moving objects or pedestrians on a road surface, with the spot illumination following the moving object or pedestrians along the portion of the road surface. The one or more light sources may project images on the ground or on other surfaces. The light source may be carried by a pedestrian or on personal transport used by a pedestrian. The light sources may be stationary and provide lighting for a pedestrian street crossing.

Abstract: Methods of manufacture are described. A method includes forming a first cavity in a substrate and placing a backplane in the first cavity. At least one layer of dielectric material is formed over the substrate and the backplane. A second cavity is formed in the at least one layer of the dielectric material to expose at least a portion of a surface of the backplane. A heat conductive material is placed in the second cavity and in contact with the at least the portion of the surface of the backplane.

Abstract: Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.

Abstract: An LED retrofit lamp is described. The LED retrofit lamp includes LEDs arranged into at least a first group of LEDs and a second group of LEDs, power contacts, an interface and a controller. The power contacts receive electrical power to operate the LEDs. The interface supplies control signals to operate one or more of the first group and the second group of LEDs. The controller receives the control signals and operates the first group of LEDs and the second group of LEDs independent from each other based on the received control signals.

Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.