Abstract: A method includes receiving a request for an allocation of memory resources based on quality of service (QoS) parameters. The method further includes provisioning, via a QoS manager component, a plurality of physical functions to provide the requested allocation of resources. At least two of the plurality of physical functions can be provided to meet a QoS criteria.

Abstract: Methods, systems, and devices for memory operations are described. A command may be received by a memory device and from a device. Both the device and the memory device may maintain counters of valid operations. A request for a value associated with a counter at the memory device may be received from the device. Based on receiving the request, a value of the counter may be transmitted to the device. The values of the counters may be compared to determine whether invalid data has been obtained by the device. Also, a pin associated with communicating error correction information may be coupled with a voltage source based on receiving a signal. The pin may remain coupled with the voltage source until a command is processed or an end of the signal. Whether the pin is coupled with the voltage source may indicate a validity of associated data.

Abstract: A method includes issuing a program command to a logic unit (LUN) of a memory device, writing a plurality of commands to a transfer queue within the memory device, detecting a program failure for the LUN of the memory device, and maintaining a number of the plurality of commands in the transfer queue.

Abstract: Methods, systems, and devices for caching identifiers for access commands are described. A memory sub-system can receive an access command to perform an access operation on a transfer unit of the memory sub-system. The memory sub-system can store an identifier associated with the access command in a memory component and can generate an internal command using a first core of the memory sub-system. In some embodiments, the memory sub-system can store the identifier in a shared memory that is accessible by the first core and can issue the internal command to perform the access operation on the memory sub-system.

Abstract: Methods, systems, and devices for connection designs for memory systems are described. A memory system may include a package and a printed circuit board (PCB). An interface of the package may be coupled with the PCB via a set of springs, where each spring may include a material configured to deform based at least in part on a shape of the package, a shape of the PCB, or both. The memory system may also include a set of latches that may secure the package in a fixed position relative to the PCB. That is, the set of springs may provide an electrical connection between the package and the PCB, and the set of latches may provide a mechanical connection between the package and the PCB. In some examples, the package, the PCB, or both, may include one or more connection structures configured to receive the latches.

Abstract: Methods and apparatus for performing diversity matrix operations within a memory fabric. Various embodiments of the present disclosure are directed to converting a memory array into a matrix fabric for spatial diversity-related matrix transformations and performing matrix operations therein. Exemplary embodiments described herein perform MIMO-related matrix transformations (e.g., precoding, beamforming, or data recovery matrix operations) within a memory device that includes a matrix fabric and matrix multiplication unit (MMU). In one variant, the matrix fabric uses a “crossbar” construction of resistive elements. Each resistive element stores a level of impedance that represents the corresponding matrix coefficient value. The crossbar connectivity can be driven with an electrical signal representing the input vector as an analog voltage. The resulting signals can be converted from analog voltages to a digital values by an MMU to yield a matrix-vector product.

Abstract: In some implementations, a memory device may detect that data is to be written for a set of temperature profiles. The memory device may write, at respective temperatures corresponding to the set of temperature profiles, multiple copies of the data. The memory device may receive, from a host device, a read request associated with the data. The memory device may detect, based on receiving the read request, a current temperature of the memory device. The memory device may read a copy, from the multiple copies, that is associated with a temperature profile, from the set of temperature profiles, that corresponds to the current temperature of the memory device. The memory device may provide, to the host device, the copy of the data.

Abstract: Methods, systems, and devices for host verification for a memory device are described. A memory device may receive a first value from a host device that is associated with an identification of the host device after an event. The memory device may transmit a second value to the host device that is based on the first value and comprises a random set of bits. The memory device may receive from the host device data or a command that comprises an encrypted third value that is based at least in part on the second value and a secret shared between the host device and the memory device. The memory device may also enable a functionality of the memory device based on the encrypted third value.

Abstract: A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative and conductive structures arranged in tiers. At least one pillar, comprising a channel material, extends through the stack structure. A source region, below the stack structure, comprises a doped material with vertical extensions that protrude to an interface with the channel material at an elevation proximate at least one source-side GIDL region. Slit structures extend through the stack structure to divide the structure into blocks of pillar arrays. A series of spaced, discrete pedestal structures are included along a base of the slit structures. Forming the microelectronic device structure may include forming a lateral opening through cell materials of the pillar, vertically recessing the channel material, and laterally recessing other material(s) of the pillar before forming the doped material in the broadened recesses.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above conductor material of a conductor tier. Channel-material-string constructions extend through the insulative and conductive tiers to a lowest of the conductive tiers. The channel-material-string constructions individually comprise a charge-blocking-material string, a storage-material string laterally-inward of the charge-blocking-material string, a charge-passage-material string laterally-inward of the storage-material string, and a channel-material string laterally-inward of the charge-passage-material string. Conductive material in the lowest conductive tier directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier.

Abstract: A memory module includes a number of memory devices. During a read operation the memory device reads data and parity bits. An error correction circuit of the memory device determines if there is an uncorrectable error in the data and parity bits. If there is an uncorrectable error, the error correction circuit aliases a bit within a specified subset of the data bits. The specified subset may be based on which patterns of errors are correctable by a module level error correction scheme.

Abstract: A command to migrate data from a source address to a destination address is detected. One or more parameters associated with the source address are provided as input to a trained machine learning model. A read verify relevance if received as output from the trained machine learning model. Responsive to determining that the read verify relevance satisfies a condition, the command is performed to migrate the data.

Abstract: A method includes memory fencing in memory components of a memory sub-system and receiving a first number of commands and a second number of command for execution on a memory sub-system, receiving a memory fencing command associated with the first number of commands and the second number of commands, and executing at least one of the first number of commands before executing at least one of the second number of commands in response to receiving the memory fencing command. The method further includes executing the at least one of the first number of commands by moving data from a first location in the memory subsystem to a second location in the memory sub-system and executing the at least one of the second number of commands by reading data from the second location in the memory sub-system and sending the data to a host system.

Abstract: Control logic in a memory device initiates a program operation including application of a set of programming pulses to a wordline associated with one or more memory cells of a memory array to be programmed to a set of programming levels, where each programming level of the set of programming levels is programmed by each programming pulse. The control logic determines that a program voltage of a programming pulse of the set of programming pulses reaches a maximum program voltage level. In response to the determining, during a subsequent programming pulse following the programming pulse, adjusting a first voltage associated with boosting a pillar voltage, a second voltage applied to a bitline, and a third voltage applied to the wordline to establish a subsequent program voltage of the subsequent programming pulse that is below the maximum program voltage level.

Abstract: Methods, systems, and devices for circuit for tracking access occurrences are described. For instance, a memory device may include a memory array with column lines extending in a first direction and row lines extending in a second direction. The memory device may include a set of sense amplifiers adjacent to the memory array in the first direction, where a first subset of the set of sense amplifiers is coupled with the first set of column lines and a second subset of the set of sense amplifiers is coupled with the second set of column lines. The memory device may include a circuit adjacent to the set of sense amplifiers along the second direction, where the circuit is configured to increment, based on the access operation for the row line, a value including the logic states read by the second subset of the set of sense amplifiers.

Abstract: In a memory controller system, a system and method to identify memory errors which may require soft package repair or hard package repair to rows of DRAM memory. When data is written to a row of DRAM, the data is immediately and automatically read back and scanned for bit errors. If bit errors are identified, the data is corrected and written back to the same memory location. The memory location is re-read. If bit errors are again identified, the memory location is marked for soft or hard repair. If, upon rereading the memory location, additional bit errors are identified, a historical record of memory errors is reviewed to determine if bit errors have occurred previously at the same memory location. If yes, the memory location is again marked for a soft post package repair or a hard post package repair.

Abstract: Methods, systems, and devices for latency reduction of boot procedures for memory systems are described. A memory system may receive a first command to perform a first reset of one or more components as part of a first phase of a boot procedure of a host system. The memory system may initiate an initialization process of a second phase of the boot procedure upon determining whether the value of a flag has been set from a first value to a second value. Upon completing the initialization process, the flag may be set to the first value. Parameters corresponding to the characteristics of the memory system may be communicated to the host system based on receiving a second command. The memory system may perform a configuration operation of a logical-to-physical mapping concurrently with communicating the parameters with the host system.

Abstract: A memory system having a set of media, a set of resources, and a controller configured via firmware to use the set of resources in processing requests from a host system to store data in the media or retrieve data from the media. The memory system has a workload manager that analyzes activity records in an execution log for a time period where each of the activity records can indicate whether a processor of the controller is in an idle state during a time slot in the time period. The workload manager identifies idle time slots within the time period during which time slots one or more lightly-loaded processors in the plurality of processors are in the idle state, and adjusts a configuration of the controller to direct tasks from one or more heavily-loaded processors to the one or more lightly-loaded processors.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line located in a first level of the apparatus; a second data line located in a second level of the apparatus; a first memory cell located in a third level of the apparatus between the first and second levels, the first memory cell including a first transistor coupled to the first data line, and a second transistor coupled between the first data line and a charge storage structure of the first transistor; and a second memory cell located in a fourth level of the apparatus between the first and second levels, the second memory cell including a third transistor coupled to the second data line, and a fourth transistor coupled between the second data line and a charge storage structure of the third transistor, the first transistor coupled in series with the third transistor between the first and second data lines.

Abstract: Aspects of the present disclosure configure a system component, such as memory sub-system controller, to dynamically generate Redundant Array of Independent Nodes (RAIN) parity information for zone-based memory allocations. The RAIN parity information is generated for a given zone or set of zones on the basis of whether the given zone or set of zones satisfy a zone completeness criterion. The zone completeness criterion can represent a specified size such that when a given zone reaches the specified size, the parity information for that zone is generated.