Abstract: There is provided a decoder in which a matrix of transistors, a plurality of reference voltage signal lines arranged on a first interconnect layer and extended in a row direction, being separated to one another over the matrix, and a plurality of reference voltage signal lines arranged on a second interconnect layer and extended in the row direction, being separated to one another over the matrix. The reference voltage signal lines on the mutually different layers are respectively connected to impurity diffusion layers of the transistors that are adjacent in the row direction.

Abstract: Provided is a cryptographic processing apparatus for a storage medium, including: a location information conversion unit that stores a conversion result in a buffer, the conversion result obtained by performing a conversion process on location information indicating a location of data to be accessed on the storage medium; and a data cryptographic processing unit that performs cryptography processing on the data using the conversion result stored in the buffer, the cryptography processing being one of encryption and decryption.

Abstract: A first inductor is connected to a transmission circuit. A second inductor is connected to a reception circuit, and is inductively coupled to the first inductor. At least part of the first inductor is formed with a first bonding wire. The first bonding wire has two ends connected to a first connecting terminal and a third connecting terminal. At least part of the second inductor is formed with a second bonding wire. The second bonding wire has two ends connected to a second connecting terminal and a fourth connecting terminal.

Abstract: In a method of manufacturing a semiconductor device, a first groove and a second groove each having a width less than that of a scribe line are formed along the scribe line in a first protective film provided below a second protective film which protects element forming regions when a wafer is divided into parts by a laser dicing, and the first groove and the second groove are filled with the second protective film. Then, the laser dicing is performed on a region between the first groove and the second groove along the scribe line from the surface where the second protective film is formed to form a cutting groove that reaches at least a predetermined depth of the multi-layer interconnect.

Abstract: An amplifier circuit includes first transistor of first conductivity type having source connected to first power supply, while having gate connected to input terminal and drain connected to output terminal; transistor of second conductivity type having source connected to second power supply and drain connected to the output terminal; second transistor of the first conductivity type whose source and gate are connected to the source and gate of the first transistor of the first conductivity type, respectively; resistor whose one end connected to drain of the second transistor of the first conductivity type, and an output control circuit; current input terminal connected to the opposite end of the resistor; and voltage output terminal connected to the gate of the transistor of the second conductivity type. The output control circuit controls the gate voltage of the transistor of the second conductivity type based on the input current of the current input terminal.

Abstract: A semiconductor device includes: a well of a second conductive type formed on or above a semiconductor substrate of a first conductive type; a first diffusion layer of the second conductive type formed in a surface portion of the well; a second diffusion layer of the first conductive type formed separately from the first diffusion layer in the surface portion of the well; first to third first-layer conductive layers formed above the well; and first to third second-layer conductive layers formed above the first to third first-layer conductive layers. The first second-layer conductive layer, the first first-layer conductive layer, the first diffusion layer and the well are conductively connected as a first conductive path. The second second-layer conductive layer, the second first-layer conductive layer, and the second diffusion layer are conductively connected as a second conductive path.

Abstract: One aspect of the present invention is a semiconductor device including: a semiconductor substrate; a first wiring that is formed on the semiconductor substrate; a second wiring that is formed to cross over the first wiring with a space interposed therebetween at a cross portion in which the first wiring and the second wiring cross each other; a protective film that is formed on the semiconductor substrate to cover at least a part of the first wiring, the part being located under the second wiring in the cross portion; and an insulator film that is formed in an island shape on the protective film under the second wiring in the cross portion to be located between edges of the protective film and to cover the first wiring in the cross portion.

Abstract: One exemplary embodiment includes a processor including a plurality of execution units and an instruction unit. The instruction unit discriminates whether an instruction is a target instruction for which determination about availability of parallel issue based on dependency among instructions is to be made with respect to each instruction contained in an instruction stream. When a first instruction contained in the instruction stream is the target instruction, the instruction unit adjusts the number of instructions to be issued in parallel to the plurality of execution units based on a detection result of dependency among the first instruction and at least one subsequent instruction. Further, when the first instruction is not the target instruction, the instruction unit issues a group of a predetermined fixed number of instructions including the first instruction in parallel to the plurality of execution units unconditionally regardless of a detection result of dependency among the instruction group.

Abstract: A polishing apparatus includes a polishing table with a polishing pad at an upper surface, and a conditioning disc carrying out conditioning of the polishing pad, and a moving mechanism (constructed, for example, from a swing arm) capable of moving the conditioning disc to a standby position above the polishing pad, and a spraying mechanism (constructed, for example, from a washing water nozzle) that sprays liquid to the conditioning disc positioned at the standby position so as to wash or wet the conditioning disc.

Abstract: Provided is a semiconductor laser element having a first protective film provided at least over the light emitting end face of an active layer (3-period multiple quantum well (MQW) active layer); and a second protective film provided over the first protective film, wherein, the first protective film is provided between a semiconductor which composes the light emitting end face and the second protective film, and a portion of the first protective film, brought into direct contact with the semiconductor, is mainly composed of a rutile-structured TiO2 film.

Abstract: Provided is a semiconductor device including: an MIM capacitor that includes a lower electrode, an upper electrode, and a capacitor insulating film formed between the lower electrode and the upper electrode; a first via hole that connects to the lower electrode and extends in a normal upward direction of a principal surface of the lower electrode; a second via hole that connects to the upper electrode and extends in a normal upward direction of a principal surface of the upper electrode; and a plurality of lower wiring lines that are formed under the lower electrode, in which formation areas of the first and second via holes overlap formation areas of the plurality of lower wiring lines when viewed in the normal direction of the principal surface of the upper electrode.

Abstract: A semiconductor device includes a conductive section formed on a semiconductor chip; and a bump electrode formed directly or indirectly on the conductive section. The conductive section includes a slit section having a thickness thinner than another portion of the conductive section. The bump electrode has a recessed section corresponds to the slit section above the slit section.

Abstract: An image processing apparatus that performs filter processing of image data includes a filter processing unit that performs filter processing by reflecting a correction value in a pixel value, an adjustment value generation unit that generates a gain value based on display position of a pixel, and a correction value change unit that changes the correction value based on the gain value generated by the adjustment value generation unit.

Abstract: An interconnect is provided in a first insulating layer and the upper surface of the interconnect is higher than the upper surface of the first insulating layer. An air gap is disposed between the interconnect and the first insulating layer. A second insulating layer is formed at least over the first insulating layer and the air gap. The second insulating layer does not cover the interconnect. An etching stopper film is formed at least over the second insulating layer. The etching stopper film is formed over the second insulating layer and the interconnect. A third insulating layer is formed over the etching stopper film. A via is provided in the third insulating layer so as to be connected to the interconnect.

Abstract: A prescaler circuit according to an exemplary aspect of the present invention includes a first flip-flop circuit that detects second output data and outputs the detected data as first output data, and a second flip-flop circuit that detects the first output data and outputs the data as the second output data. The first flip-flop circuit includes a master-side latch circuit that generates intermediate data, a slave-side latch circuit that detects the intermediate data and outputs the data as the first output data, and a control signal switching circuit that selects and outputs the first output data as a control signal in a mode where the frequency is divided by 3, and selects and outputs a predefined fixed signal as a control signal in a mode where the frequency is divided by 4. The master-side latch circuit generates the intermediate data based on the second output data and the control signal.

Abstract: In a transistor region, a source interconnect layer and a gate electrode are buried in trenches. A source extending region is provided adjacent to the transistor region or in the transistor region, and a source interconnect layer is designed to protrude from the upper end of a trench. This source interconnect layer is connected to a source electrode formed in the transistor region immediately above the trench. A gate extending region is provided outside the source extending region, and the gate electrode and a gate interconnect layer are connected. The gate electrode is formed by performing etchback without forming a resist pattern, after a polysilicon film is formed. Here, the polysilicon film remains like a side-wall on the sidewall of the portion of the source interconnect layer protruding from the upper end of the trench.

Abstract: Provided is an interpolating A/D converter including a reference voltage generation circuit, an analog signal input circuit, a preamplifier group including a plurality of preamplifiers, and an interpolation circuit including a plurality of resistors. Reference voltages from the reference voltage generation circuit and an analog signal from the analog signal input circuit are input to the preamplifier group. The interpolation circuit outputs an interpolation signal by interpolating output signals of the preamplifier group. The preamplifiers amplify a differential voltage when a differential voltage between the analog signal and the reference voltages is smaller than a specified value, and the current flow of which is stopped when it is larger than the specified value. The plurality of resistors are connected in series between the adjacent amplifiers.

Abstract: Provided is a semiconductor integrated circuit including: a differential driver that is, disposed between a first power supply and a second power supply and drives differential input signals to generate differential output signals; and a control signal generation circuit that generates a first control signal for controlling a voltage level of each of the differential output signals. When each of a pair of output signals forming the differential output signals is changed from a voltage level corresponding to the first power supply to a voltage level corresponding to the second power supply, an amount of change in the voltage level of the corresponding output signal is controlled based on the first power supply.

Abstract: A semiconductor device includes: a FinFET (Fin Field Effect Transistor); and a PlanarFET (Planar Field Effect Transistor). The FinFET is provided on a chip. The PlanarFET is provided on the chip. A second gate insulating layer of the PlanarFET is thicker than a first gate insulating layer of the FinFET.

Abstract: In a semiconductor storage device including a transistor for reading port, undesired voltage decrease may occur in a bit line in a reading operation due to a leak current from the transistor for reading port of a memory cell, which may cause a reading error. A semiconductor storage device according to one aspect of the present invention includes a third transistor having one of a source and a drain connected to a first bit line and switching supply of a ground voltage performed on the first bit line in accordance with a value held in a memory cell according to selection and non-selection of the memory cell, and a fixed voltage keeping circuit keeping a potential of the other of the source and the drain of the third transistor to a fixed potential in a memory cell non-selected state in a six-transistor SRAM.