Abstract: A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.

Abstract: A substrate has a plurality of pads formed over one surface of a base, and an insulating film which is formed thereon and has a plurality of openings formed therein so as to expose each of the pads, wherein the openings of the insulating film are formed so that, in each pad formed at the corner of the base, among the plurality of pads, a first peripheral portion which composes a portion of the pad more closer to the corner and more distant away from the center of the base is covered by the insulating film, and so that a second peripheral portion which composes a portion of the pad more closer to the center as compared with the first peripheral portion is exposed in the opening.

Abstract: An overvoltage protection circuit includes an output transistor coupled between a power supply and an output terminal, the output terminal including a terminal for being coupled to a load and a dynamic clamping circuit and a clamp selection transistor coupled in series between the power supply terminal and a control terminal of the output transistor. The clamp selection transistor is coupled between the dynamic clamping circuit and a control terminal of the output transistor. In addition, the clamp selector transistor includes an N-channel type transistor, a control terminal of the N-channel type transistor being coupled to a ground potential.

Abstract: A semiconductor device according to the present invention having a vertical MOSFET that includes a first trench that is formed in a semiconductor substrate and includes a gate electrode of the vertical MOSFET embedded therein with a gate insulating film interposed therebetween, a second trench that is connected with the first trench and has a trench width wider than the first trench, a gate pad that is connected with the gate electrode and formed to a sidewall of the second trench with the gate insulating film interposed therebetween, and a gate line that is connected with a sidewall of the gate pad and electrically connects with the gate electrode via the gate pad.

Abstract: A semiconductor device includes a first contact formed so as to be connected to the first impurity-diffused region, but not to the first gate electrode; and a second contact formed so as to be connected commonly to the second gate electrode and the second impurity-diffused region, wherein each of the first contact and the second contact has a profile such that the taper angle changes at an intermediate position in the depth-wise direction from the surface of an insulating film towards a substrate, and the intermediate position where the taper angle changes resides more closer to the substrate in the second contact, than in the first contact.

Abstract: An erase method of a nonvolatile semiconductor memory device including a semiconductor substrate with diffusion regions spaced from each other, a first insulating layer formed on the semiconductor substrate, a first gate electrode formed in a first area on the first insulating layer, a charge accumulation layer formed in a second area on the first insulating layer, a second insulating layer formed on the charge accumulation layer and a second gate electrode formed on the second insulating layer includes a step of injecting hot holes into the charge accumulation layer from the diffusion region and a step of injecting channel hot electrons into a part of the charge accumulation layer close to the first gate electrode side.

Abstract: A semiconductor device includes a substrate, a first internal terminal, a second internal terminal, a third internal terminal, and a fourth internal terminal which are placed along perimeter of the substrate, a circuit formed above the substrate and coupled to the first internal terminal, a first external terminal coupled to the second internal terminal, a second external terminal coupled to the third internal terminal, and a third external terminal coupled to the fourth internal terminal and placed beside one side of the substrate where the second external terminal is located, wherein the circuit generates a signal indicative of a connection state between the first internal terminal and the first external terminal, and wherein the first internal terminal and the second internal terminal are arranged to form two rows in a direction perpendicular to one side of the substrate beside which the first external terminal is placed.

Abstract: A semiconductor device is provided with a silicon substrate and a structure filled in a through hole that has a rectangular cross section and extends through the silicon substrate. The structure comprises a pipe-shaped through electrode, stripe-shaped through electrodes, silicons, a first insulating film, a second insulating film and a third insulating film. The pipe-shaped through electrode is utilized as a pipe-shaped electric conductor that extends through the silicon substrate. In addition, the stripe-shaped through electrodes are provided in the interior of the pipe-shaped through electrode so that the stripe-shaped through electrodes extend through the silicon substrate and is spaced away from the pipe-shaped through electrode. A plurality of through electrodes are provided in substantially parallel within the inner region of the pipe-shaped through electrode.

Abstract: Gas introduction piping introduces process gas for plasma generation into a processing chamber. A pressure regulating valve is provided at an exhaust pipe. A mass flow controller is provided at the gas introduction piping and regulates the flow rate of the process gas. A pressure gauge detects the pressure of the processing chamber. A control unit controls pressure within the processing chamber by controlling an extent of opening of the pressure regulating valve based on values detected by the pressure gauge. The control unit receives flow rate data indicating the rate of flow of process gas from the mass flow controller and determines the presence or absence of faults at the mass flow controller based on an extent of fluctuation of the values detected by the pressure gauge when a high-frequency is inputted to the electrode.

Abstract: A data recording/reproducing apparatus according to an embodiment of the present invention includes: a temporary storage unit for storing a data stream including a plurality of data units, which is divided into M (M is a natural number) segments that stores the plurality of data units; a control unit for detecting that K (K is a natural number) data units related to the order of reproducing or recording data of a first data unit, after the first data unit included in the data stream is stored in the temporary storage unit, and setting relational information for the K data units in the first data unit; and a recording/reproducing unit that receives a data stream including the set first data unit from the temporary storage unit on a segment basis, and references the received data stream to generate recording data to record the data on a recording medium, and/or reads the recorded data from the recording medium to reproduce the read data.

Abstract: A semiconductor memory device is adapted so that access time can be measured accurately when the device is in a test mode. A read or write operation of a memory array in the normal mode is performed in accordance with a first signal, a read or write operation of the memory array in the test mode is performed in accordance with a second signal, and a test of a plurality of items of output data from the memory array is conducted in the test mode and results of the test are output. It is so arranged that a desired test is conducted in the test mode based upon a third signal unrelated to the first signal and second signal.

Abstract: A memory device includes a memory and a control circuit. The memory includes cells arranged in a matrix of rows and columns. The cells are grouped into banks, and each of the banks contains at least one column of the cells. The control circuit instructs a read operation in units of rows and a write operation in units of cells, and inhibits the read operation in units of the banks when the write operation is carried out to a specific one of the cells of a specific one of the banks.

Abstract: Disclosed is a microwave phase shifter including switches each of which utilizes resonance between an off-capacitance of an FET and an inductor connected in parallel with the off-capacitance of the FET, an LPF, and an HPF, a series circuit of an inductor and an MIM capacitor is arranged in parallel with the FET in each portion of the resonance. In a layout of the LC series-connected circuit, though the inductor is of a non-close-packed structure, a metal member or a dielectric material having a relative dielectric constant higher than that of a dielectric substrate is arranged in a free space in a central portion of the inductor.

Abstract: A digital-to-analog converter circuit includes: a first subdecoder for receiving a first reference voltage group and selecting a reference voltage Vrk based upon an input digital signal; a second subdecoder for receiving a second reference voltage group and selecting a reference voltage Vr(k+1) based upon the input digital signal; a third subdecoder for receiving a third reference voltage group and selecting a reference voltage Vr(k+2) based upon the input digital signal; a fourth subdecoder for receiving the reference voltages that have been selected by respective ones of the first to third subdecoders, selecting two of these reference voltages (inclusive of selecting the same voltage redundantly) based upon an input digital signal, and outputting the selected two reference voltages; and an amplifier circuit for receiving the two reference voltages that have been selected by the fourth subdecoder and outputting a result of an operation applied to the two reference voltages.

Abstract: A method of manufacturing a semiconductor device including a PMOS transistor and a NMOS transistor is described. The method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.

Abstract: To provide a driver circuit that enables reduction in the number of elements formed through a high-voltage process and in chip size. An embodiment of the present invention relates to a driver circuit for inversion-driving a liquid crystal display panel, including: a positive-polarity line transmitting a positive display signal relative to a common electrode signal; a negative-polarity line transmitting a negative display signal relative to the common electrode signal; a dot inversion switch circuit switching the positive-polarity line and the negative-polarity line from each other to be connected with a source line; a charge recovery circuit connected with the positive-polarity line through a positive charge recovery switch and connected with the negative-polarity line through a negative charge recovery switch; and a common short circuit connecting the positive-polarity line and the negative-polarity line with a common electrode.

Abstract: An IC socket is provided with first and second contact pins and a socket body supporting said first and second contact pins. The first contact pin is used to establish a connection with a first terminal of a semiconductor package, while the second contact pin is used to establish a connection with a second terminal of said semiconductor package. The first and second terminals have different heights from a mount face of the semiconductor package.

Abstract: Reduction in power consumption of a counter circuit for continuous operation is demanded. Therefore, provided is a counter circuit including: a first counter of m bits for counting and storing a value of a predetermined bit width according to an input clock; a clock transmission control circuit for controlling whether to transmit the input clock based on a value output according to a counting result of the first counter; and a second counter of n bits for counting and storing another value of the predetermined bit width according to the input clock transmitted from the clock transmission control circuit.

Abstract: The semiconductor device 1 has a semiconductor chip 10 (first semiconductor chip) and a semiconductor chip 20 (second semiconductor chip). The semiconductor chip 20 is formed on the semiconductor chip 10. The semiconductor chip 20 is constituted by comprising a semiconductor substrate 22. The semiconductor substrate 22, which is an SOI substrate, is constituted by comprising an insulating layer 34, and a silicon layer 36, which is provided on the insulating layer 34, including a circuit forming region A1. The insulating layer 34 functions as a protective film (a first protective film) covering a lower face (a face opposite to the semiconductor chip 10) of the circuit forming region A1. A protective film 38 (a second protective film) is provided on the semiconductor substrate 22. The protective film 38 covers a side face of the circuit forming region A1.

Abstract: A drive circuit that is an example of the present invention is a drive circuit of a display device for outputting in parallel the analog picture signals generated based on the digital picture signals inputted in serial. This circuit comprises a level shift circuit for converting the voltage level of the digital picture signals that were inputted in serial, a D/A conversion circuit for generating analog picture signals based on the digital picture signals that were subjected to level conversion with the level shift circuit, and an expansion circuit connected to the output side of the D/A conversion circuit or between the level shift circuit and the D/A conversion circuit and serving to expand and hold the inputted serial picture signals in parallel and output the picture signals in parallel. The level shift circuit is thus formed in the front stage of the picture signal register circuit.