Abstract: An integrated circuit (IC) module comprising at least one memory mapped resource, at least one port arranged to be coupled to a further IC module, and an address decoding component. Upon receipt of a resource access request by the IC module, the address decoding component is arranged to extract at least one position parameter from an address field of the received resource access request, determine if the at least one position parameter indicates a target resource as residing within the IC module, and if it is determined that the at least one position parameter indicates the target resource as not residing within the IC module, modify the at least one position parameter to represent a change of one position and forward the resource access request with the modified position parameter over the port to the further IC module.

Abstract: A system and method for packaging a semiconductor device that includes a structure to reduce electromagnetic coupling are presented. The semiconductor device is formed on a substrate. A cover is affixed to the substrate so as to extend over the semiconductor device. An isolation structure of electrically conductive material is coupled to the cover in between components of the semiconductor device, with the isolation structure being configured to reduce inductive coupling between those components during an operation of the semiconductor device. In one version, the isolation structure includes a first leg extending from a ground connection along a side wall of the cover to a cross member contiguous with a primary cover wall that extends over the semiconductor device between the components to be isolated electromagnetically.

Abstract: A memory controller receives first and second write transactions from a processor and stores write data in a memory. The memory controller includes an address comparison circuit, a buffer, a level control circuit, a command generator, and a control circuit. The address comparison circuit compares second and third addresses and outputs first and second write data when the second and third addresses are consecutive. The buffer stores the first and second write data and outputs buffered data based on a control signal. The level control circuit compares a size of the buffered data with a threshold size and the size of the buffer. The command generator causes a write transaction to be executed based on the comparison results, rather than having the processor initiate the transaction, which reduces the load on the processor, and the buffered write data is stored in the memory.

Abstract: A method and memory for stressing a plurality of non-volatile memory cells is provided. The method includes entering a memory cell stressing mode and providing one or more erase stress pulses to the plurality of non-volatile memory cells; determining that a threshold voltage of at least a subset of the plurality of non-volatile memory cells has a first relationship that is either greater than or less than a first predetermined voltage; providing one or more program stress pulses to the plurality of memory cells; and determining that the threshold voltage of at least a subset of the plurality of memory cells has a second relationship to a second predetermined voltage that is different than the first relationship.

Abstract: A hardware access control list (ACL) table is used to evaluate a received network packet to identify a first rule key portion in the hardware ACL table having a first address range indicator value that matches with an address value in the network packet, and the first rule key portion is then used to search a software-maintained list of extended check nodes linked with the first rule key portion to identify a first extended check node having a first address range value that matches with the address value in the network packet and to select one or more actions contained in the first extended check node to be performed by the networking element.

Abstract: A switching module comprising at least one power switching device arranged to output from an output node thereof a load current for the switching module, and at least one current sense component arranged to generate at least one sense current representative of the load current. The at least one current sense component comprises at least one temperature coefficient compensation resistance within the path of the at least one sense current and arranged to cause the at least one sense current to be at least partly compensated for a temperature coefficient caused by at least one parasitic routing resistance of a load current path for the at least one power switching device.

Abstract: Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

Abstract: A plurality of trench stripes are disposed in parallel in an epitaxial layer on a drain and extends from a top region to a bottom region of a first surface of the semiconductor. A first polysilicon layer is in each of the trench stripes. The first polysilicon layer extends between the drain and the first surface proximal to the top region and the bottom region, and between the drain and a level below the first surface in a middle region between the top region and the bottom region. A second polysilicon layer is over the first polysilicon layer in the middle region, wherein the first poly silicon layer forms a shield, and the second polysilicon layer forms a gate. A source is in a silicon mesa stripe surrounding the first trench stripe.

Abstract: Aspects of the present disclosure relate to phase-change materials. In accordance with an example embodiment, a phase-change material has a crystalline structure that manifests changes that increase as a function of time. For example, such changes may be implemented for monitoring the time that a perishable item has been exposed to an environment having a temperature that is greater than a threshold temperature. Based on the changes, a characterization is provided, indicative of the exposure of the phase-change material to the environment having the temperature that is greater than the threshold temperature.

Abstract: A multiphase transmitter including a reactive combiner for combining amplified pulse modulated signals generated by multiple power amplifiers of the transmitter. In some embodiments, the reactive combiner is configured to inhibit odd order harmonics of the amplified pulse modulated signals in a power efficient manner.

Abstract: A DC-to-DC converter is disclosed. The SMPS driver includes a highside switch having a first terminal, a second terminal and a gate. The first terminal is coupled to an input voltage terminal. The SMPS driver further includes a lowside switch having a first terminal, a second terminal and a gate. The first terminal of the lowside switch is coupled to the second terminal of the highside switch and the second terminal of the lowside switch is coupled to ground. A diode is coupled to the gate of the lowside switch on one side and to a capacitor on the other side. An integrated circuit (IC) is included to generate control signals for switching the highside switch and the lowside switch. The IC includes a highside supply pin, a highside gate control pin, a half bridge pin, a lowside gate control pin and a ground pin. The gate of the lowside switch is coupled to the lowside gate control pin, the highside supply pin is coupled to the diode and the capacitor is coupled to the half bridge pin.

Abstract: Various embodiments relate to a method and apparatus for over sampling a RF carrier signal, the method including receiving, by an ADC, the RF carrier signal, sampling, by the ADC, the RF carrier signal using the selected clock signal which is at least quadruple the RF carrier signal, down sampling, by a RF-DSP, the RF carrier signal by a factor of two to generate I channel data and Q channel data, mixing down, by the RF-DSP, the I channel data and the Q channel data, and outputting, by the RF-DSP, the I channel data and Q channel data to a baseband DSP.

Abstract: An embodiment of a transistor die includes a semiconductor substrate a drain region, a channel region, a drain terminal, and a conductive gate tap. The conductive gate tap includes a distal end that is coupled to a gate structure over the channel region. A first segment of the drain region is adjacent to the distal end of the gate tap. The drain terminal includes a drain runner formed from one or more portions of the patterned conductive layers. A plurality of drain pillars electrically connects the drain runner to second and third segments of the drain region, and a plurality of second drain pillars electrically connect the drain runner and the third drain region segment. The build-up structure over the second drain region segment between the first and second drain pillars is devoid of electrical connections between the drain runner and the drain region.

Abstract: A circuit for diagnostic testing includes a current source coupled to a power source and configured to provide wetting current along a path to a load control switch, a current sensor connected in series with the current source along the path, the current sensor being configured to generate a current sensor signal indicative of a current level along the path, a voltage measurement unit having an input terminal coupled to a node along the path through which the wetting current flows to reach the load control switch, the voltage measurement unit being configured to detect a state of the load control switch based on a voltage at the node, and a controller coupled to the current sensor and the voltage measurement unit, the controller being configured to determine a wetting current diagnostic condition in accordance with the current level and the detected state.

Abstract: An integrated circuit package comprises an electrically conductive material, a first electrically isolating layer having a first side in contact with the electrically conductive material and a second side opposite to the first side, a second electrically isolating layer stacked at the second side with at least the first electrically isolating layer and arranged at a package side, and an integrated antenna structure arranged between the first electrically isolating layer and the second electrically isolating layer. The electrically conductive material is encapsulated by a dielectric material, arranged to partly overlap the integrated antenna structure, separated from the integrated antenna structure by at least the first electrically isolating layer and arranged to reflect a radio frequency signal received by the electrically conductive material through at least the first electrically isolating layer to the package side.

Abstract: An on-board trimming circuit suitable for trimming an accelerometer provides offset trim and gain trim modules for determining correct trim codes for subsequent programming into the trimming circuit. The correct trim codes may be determined by comparing sensor outputs which have been adjusted by successive trim codes, with a reference voltage in a comparator until the comparator toggles or by using a successive approximation technique. The reference voltage is supplied form a tap of a feedback resistance divider circuit which forms a part of an on-board voltage reference generator which may be used to provide a full scale reference for an analog to digital converter which converts a sensor output voltage into a digital signal. Using these reference voltages significantly lessens the impact of any offsets inherent in the voltage reference generator on the trimming process.

Abstract: A smartcard communicating simultaneously with a smart phone and a point of sale, thereby allowing the smartcard to act as a bridge between the point of sale and the smart phone. The smart card is typically powered by the point of sale and typically communicates with the smart phone using BLUETOOTH Low Energy (BLE).

Abstract: The embodiments described herein include systems with a variable reluctance sensor (VRS) interface and methods of their operation. Embodiments of VRS interfaces include a clearing signal generator configured to generate a clearing signal corresponding with the timing of a noise event. The clearing signal may be configured to clear a post-processing circuit.

Abstract: A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening. A portion of the first material is removed around the epitaxially grown semiconductor material in the opening and a gate material is formed in locations of the removed first material. The epitaxially grown semiconductor material in the opening serves as a channel region for a multigate transistor and the gate material serves as a gate for the multigate transistor.

Abstract: A power supply is disclosed. The power supply an output diode, a main switch coupled to the input filter and an output inductor coupled to the output diode and the main switch. The power supply also includes a bypass switch coupled to the main switch and configured to bypass the output inductor. A switch driver is included and the switch driver is configured to turn on the bypass switch and upon detecting the output diode in a blocking mode, turn on the main switch and turn off the bypass switch.