Abstract: A MEMS tunable capacitor comprises first and second opposing capacitor electrodes, wherein the second capacitor electrode is movable by a MEMS switch to vary the capacitor dielectric spacing, and thereby tune the capacitance. A tunable dielectric material and a non-tunable dielectric material are in series between the first and second electrodes. The tunable dielectric material occupies a dimension gd of the electrode spacing, and the non-tunable dielectric material occupies a dimension g of the electrode spacing. A third electrode faces the movable second electrode for electrically controlling tunable dielectric material. A controller is adapted to vary the capacitor dielectric spacing for a first continuous range of adjustment of the capacitance of the MEMS capacitor, and to tune the dielectric material for a second continuous range of adjustment of the capacitance of the MEMS capacitor, thereby to provide a continuous analogue range of adjustment including the first and second ranges.

Abstract: A male connection component (120) for connection with a correspondingly configured female connection component (140) having a recess (144) extending into a main surface (170) of a female Substrate (142) of the female connection component (140), wherein the female connection component (140) comprises a plurality of electrically conductive female contacts (146) which are electrically decoupled from one another and are arranged at different height levels with regard to the main surface (170) of the female Substrate (142), the male connection component (120) comprising a male Substrate (102), a Protrusion (104) protruding from a main surface (160) of the male Substrate (102) and comprising a plurality of electrically conductive male contacts (106) which are electrically decoupled from one another and are arranged at different height levels with regard to the main surface (160) of the male Substrate (102), wherein the male connection component (120) is adapted for connection with the female connection component (1

Abstract: A system and method for obtaining an authorization key to use a product utilizes a secured product identification code, which includes a serial number and at least one code that is generated based on a cryptographic algorithm.

Abstract: Disclosed is a circuit (100) comprising a transistor (110) coupled between a supply voltage line (102) and ground (106), the transistor comprising a control terminal coupled to a input signal line (104), the circuit further comprising first and second bipolar transistors (122, 124) coupled in series between the input signal line (104) and ground (106), wherein the base of the first bipolar transistor is connected to the input signal line and the base of the second bipolar transistor is connected to ground.

Abstract: The invention relates to a method for saving power especially for tag talks first data transmission in radio frequency identification (RFID) systems including a tag containing a non-volatile memory, a digital block and an analogue block and a static random access, wherein the data of the non-volatile memory are prefetched from the non-volatile memory into the digital block and the tag talks first data will be stored in the static random access memory embedded in the digital block.

Abstract: According to an example embodiment, a device includes a resonant circuit configured and arranged to provide a peak current flow at a resonance frequency. A trimming circuit provides variable impedances to the resonant circuit and thereby changes the resonance frequency for the resonant circuit. A driver circuit is configured to generate a trimming signal that oscillates at a desired frequency. A switch circuit couples and decouples the driver circuit to the resonant circuit for driving the resonant circuit with the trimming signal. An amplitude detection circuit detects amplitudes for signals generated in response to the trimming signal being connected to the resonant circuit. A processing circuit correlates detected amplitudes from the amplitude detection circuit with different impedance values of the variable trimming circuit.

Abstract: Embodiments of a method and system are disclosed. One embodiment of a method for signaling an interrupt in an I2C system that includes a master I2C device and at least one slave I2C device that are connected by an SDA line and an SCL line is disclosed. The method involves, at the slave I2C device, pulling the SDA line low to signal an interrupt and at the slave I2C device, releasing the SDA line in response to either the SCL line having been pulled low or the expiration of a predetermined time period, whichever occurs first. In an embodiment, the predetermined time period is 1 ms.

Abstract: A method of managing wirelessly transmitted use-data in a wireless data transmission environment, the method comprising: Receiving the wirelessly transmitted use-data by a first receiver and estimating a reception quality of the use-data received by the first receiver by applying a quality criterion. In case the reception quality meets the quality criterion, the method moreover comprises using a second receiver for background scanning the wireless data transmission environment, and in case the reception quality does not meet the quality criterion, the method moreover comprises using the second receiver additionally for reception of the use-data, thus providing both receivers for a diversity reception of the use-data.

Abstract: An amplifier has a dual bridge design with two bridge amplifiers. A mode switch enables them to be configured in a series amplification mode. The switching of the mode switch is dynamic and enables re-use of signal current thereby improving overall system efficiency. A delay to the mode switch closure is provided in the event of clipping of one of the amplifier outputs. This prevents large cross currents from flowing.

Abstract: A sigma-delta modulator (300) comprising a first filter stage (304); a second filter stage (306) in series with the first filter stage (304); a first feedback path (311) between the output of the second filter stage (306) and the input to the second filter stage (306), the first feedback (311) comprising a first gain stage (308, 308?) such that the first feedback path (311) is configured to provide a first gain value; and a second feedback path (313) between the output of the second filter stage (306) and the input to the first filter stage (304), the second feedback path (313) comprising a second gain stage (309; 310?) such that the second feedback path (313) is configured to provide a second gain value. The first gain value is different to the second gain value.

Abstract: Disclosed is an integrated circuit, system or architecture suitable for NFC functionality and including an NFC companion block connectible to a power source and capable to providing a non-continuous power boost to NFC signals, inter alia, thereby facilitating use of a broader range of antennas, multiple antennas, and thereby providing greater NFC functionality and versatility Further disclosed is a detachable antenna embedded in a potentially detachable shell which closely fits a mobile device and is adapted for use with the above mentioned integrated circuit, system or architecture.

Abstract: There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.

Abstract: A method for manufacturing a microelectronic package (1) comprises the steps of providing at least two members (10, 11, 16) comprising electrically conductive material; providing a microelectronic device (15); placing the electrically conductive members (10, 11, 16) and the microelectronic device (15) in predetermined positions with respect to each other, and establishing electrical connections between each of the electrically conductive members (10, 11, 16) and the microelectronic device (15); and providing a non-conductive material for encapsulating the microelectronic device (15) and a portion of the electrically conductive members (10, 11, 16) connected thereto. The electrically conductive members (10, 11, 16) are intended to be used for realizing contact of the microelectronic device (15) arranged inside the package (1) to the external world.

Abstract: A contactless transponder device is provided with multiple ICs. A first IC includes a first contactless transponder interface circuit configured and arranged to respond to a contactless field by providing a first identifier of the first IC. A second IC includes a second contactless transponder interface circuit configured and arranged to respond to the contactless field by providing a second identifier of the second IC. A controller is configured and arranged to inhibit the first IC from responding to the contactless field.

Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

Abstract: A magnetic field sensor assembly for measuring an angular direction of a sensed magnetic field relative to the assembly is disclosed. The sensor assembly includes a sensor of a first type configured to sense an orientation of the sensed magnetic field, a sensor of a second type configured to measure an orientation and a direction of the sensed magnetic field and processing circuitry connected to each of the magnetic field sensors. The processing circuitry being configured to process output signals from the sensor of the first type to determine an uncorrected sensed magnetic field angle and to apply an offset angle to the uncorrected magnetic field angle dependent on a logical combination of signs of output signals from the sensors of the first and second types.

Abstract: A phase change memory (PCM) architecture and a method for writing a PCM architecture are described. In one embodiment, a PCM architecture includes a PCM array, word line driver circuits, bit line driver circuits, a source driver circuit and a voltage supply circuit. The bit line driver circuits are connected to the PCM array and the electrical ground. Other embodiments are also described.

Abstract: A device includes a transmission circuit that is configured and arranged to transmit data in accordance with a signal bus protocol that uses passive bias to set a signal bus to a recessive value in the absence of an actively-driven signal value. The transmission circuit includes a first driver circuit that is configured and arranged to actively drive the signal bus to a dominant value that is different from the recessive value. The transmission circuit also includes a second driver circuit that is configured and arranged to actively drive the signal bus to the recessive value. A control circuit is configured and arranged to disable the second driver circuit in response to the device operating in a first data transmission mode, and to enable the second driver circuit in response to the device entering a second transmission mode.

Abstract: Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.

Abstract: A power selector for switching power supplies is implemented using a variety of methods and devices. According to an example embodiment of the present disclosure, an arrangement provides power to a circuit by selecting between a first supply and a second supply. The first power circuit provides a regulated level of power to the integrated circuit (IC) having an operating power level specified as a circuit operating level for providing power to the IC. The second power circuit provides power to the IC. A power-signal arbitration circuit for assessing VDDREG and whether the second power circuit is to provide power to the IC as an alternative to the first power circuit providing power to the IC is based on a threshold power level indicative of the specified operating power level and the regulated level of power. Based on the power-signal arbitration circuit's assessment, providing an arbitration-control signal to the power-signal switching circuit.