Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.

Abstract: An endoscope comprises a light splitting device for transmitting a first illuminating light and reflecting a second illuminating light emitted by a light source. The first illuminating light passes through a first color filter transmitting a first color. The second illuminating light passes through the second color filter transmitting a second color. The first color is different from the second color. The light splitting device combines a first incident light of the first color and a second incident light of the second color. The first incident light of the first color and the second incident light of the second color pass through an imaging lens and form images of the first color and the second color on an image sensor, respectively. A CFA (color filter array) comprising a plurality of first CFA components of the first color and a plurality of second CFA component of the second color covering the image sensor.

Abstract: A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element. The large pixels and small pixels form a first and second pixel array respectively, each having a pixel pitch Px and Py. The second pixel array is offset from the first pixel array by ½Px and ½Py. A first large pixel of the large pixels is between and collinear with a first and a second small pixel separated by ?{square root over (Px2+Py2 )} in a first direction and each having a width W less than both pixel pitch Px and Py. The microlens is aligned with the first large pixel. The opaque element is between the first large pixel and the microlens and extends, in the first direction, less than ½(?{square root over (Px2+Py2)}?W) from the first small pixel toward the second small pixel. The opaque element has a width perpendicular to the first direction not exceeding width W.

Abstract: An imaging device includes a photodiode array with a first and second photodiodes. First and second floating diffusions are configured to receive charge from the first and second photodiodes, respectively. An analog to digital converter (ADC) is configured to receive simultaneously first and second bitline signals from the first and second floating diffusions, respectively. The ADC is configured to generate a reference readout in response to the first and second bitline signals after a reset operation. The ADC next generates a first half of a phase detection autofocus (PDAF) readout in response to the first and second bitline signals after charge is transferred from the first PDAF photodiode to the first floating diffusion. The ADC then generates a full image readout in response to the first and second bitline signals after charge is transferred from the second photodiode to the second floating diffusion.

Abstract: A method for forming a transfer gate includes (i) forming a dielectric pillar on a surface of a semiconductor substrate and (ii) growing an epitaxial layer on the semiconductor substrate and surrounding the dielectric pillar. The dielectric pillar has a pillar height that exceeds an epitaxial-layer height of the epitaxial layer relative to the surface. The method also includes removing the dielectric pillar to yield a trench in the epitaxial layer. A pixel includes a doped semiconductor substrate having a front surface opposite a back surface. The front surface forms a trench extending a depth zT with respect to the front surface within the doped semiconductor substrate along a direction z perpendicular to the front surface and the back surface. The pixel has a dopant concentration profile, a derivative thereof with respect to direction z being discontinuous at depth zT.

Abstract: An imaging device includes pixel circuits that include either image sensing photodiodes or phase detection autofocus (PDAF) photodiodes. The PDAF photodiodes are included in a first PDAF pixel circuit included in a first grouping of rows, and a second PDAF pixel circuit included in a second grouping of rows of a pixel array. Bitline pairs are coupled to respective columns of the pixel array. Each bitline pair includes a first bitline coupled to the first grouping of rows and a second bitline coupled to the second grouping of rows of respective columns of the pixel array. Multiplexers are configured to select one of respective first or second bitlines of each bitline pair. A PDAF multiplexer is coupled to a PDAF select signal and the second PDAF circuit through a respective bitline pair. The remaining multiplexers are coupled to a select signal and are coupled to remaining bitline pairs.

Abstract: A pixel circuit includes a photodiode and a floating diffusion disposed in a semiconductor substrate. A transfer gate is disposed between the photodiode and the floating diffusion to transfer photogenerated image charge from the photodiode to the floating diffusion. A dual floating diffusion (DFD) transistor is coupled between the floating diffusion and a DFD capacitor. The DFD transistor includes a DFD gate that includes a planar gate portion disposed over a surface of the semiconductor substrate and a vertical gate portion that extends vertically from the planar gate portion into the semiconductor substrate. The vertical gate portion of the DFD gate is configured to increase a gate to substrate coupling capacitance of the DFD transistor. The gate to substrate coupling capacitance and the DFD capacitor are coupled to increase an effective capacitance associated with the floating diffusion in response to the DFD transistor being turned on.

Abstract: A method of compressing and storing preview video includes performing colorspace-reduction image compression on a reference frame of a video to generate a colorspace-reduced reference frame; determining difference blocks representing areas of a subsequent image frame that differ from the reference frame and generating a difference frame comprising colorspace-reduced image data of the difference blocks; generating a video stream comprising a color palette, the colorspace-reduced reference frame, and the difference frame, and storing the video stream in an extreme low-voltage memory; and injecting, into the video stream prior to storing the video stream in the extreme low-voltage memory, a plurality of resynchronization codes for each reference frame and a plurality of resynchronization codes for each difference frame, the resynchronization codes comprising a byte sequence unique to resynchronization codes.

Abstract: A time-of-flight (TOF) pixel includes a semiconductor material and a photogate disposed proximate to a frontside of the semiconductor material. The photogate is positioned to transfer charge in the semiconductor material toward the frontside in response to a voltage applied to the photogate. A floating diffusion is disposed in the semiconductor material proximate to the frontside of the semiconductor material, and one or more virtual phase implants is disposed in the semiconductor material proximate to the frontside of the semiconductor material. At least one of the one or more virtual phase implants extend laterally from under the photogate to the floating diffusion to transfer the charge to the floating diffusion.

Abstract: An event driven sensor includes an arrangement of photodiodes including an inner portion laterally surrounded by an outer portion. An outer pixel cell circuit is coupled to generate an outer pixel value in response to photocurrent generated by the outer portion. The outer pixel value is a binned signal representative of an average value of brightness of incident light on the arrangement of photodiodes. An inner pixel cell circuit is coupled to the inner portion to generate an inner pixel value in response to photocurrent generated by from the inner portion. An event driven circuit is coupled to the outer pixel cell circuit and the inner pixel cell circuit. The event driven circuit is coupled to generate an output signal responsive to an inner brightness indicated by the inner pixel value relative to an outer brightness indicated by the outer pixel value.

Abstract: A readout circuit for use in an image sensor includes a plurality of comparators. Each one of the plurality of comparators is coupled to receive a ramp signal and a respective analog image data signal from a respective one of a plurality of column bit lines to generate a respective comparator output. Each one of a plurality of arithmetic logic units (ALUs) is coupled to receive phase-aligned Gray code (GC) outputs generated by a GC generator. Each one of the plurality of ALUs is further coupled to a respective one of the plurality of comparators to receive the respective comparator output. Each one of the plurality of ALUs is coupled to latch the phase-aligned GC outputs in response to the respective comparator output to generate a respective digital image data signal.

Abstract: A clock control circuit of an ADC includes a plurality of fractional divider circuits, each including a programmable integer divider coupled to receive an enable skew signal, a clock signal, and an output integer signal to divide down the clock signal by a factor responsive to the output integer signal to generate a fractional divider signal. A delta-sigma modulator is coupled to receive a fractional modulus signal, an input integer signal, and the fractional divider signal to generate the output integer signal, which is a varying signal each cycle and having a long term average DC value substantially equal to a fractional divider ratio K. An extended gain control circuit is coupled to receive the fractional divider signal from each of the fractional divider circuits to generate a plurality of ramp clock signals with adjustable frequencies to adjust a gain setting of a ramp generator of the ADC.

Abstract: A CMOS image sensor has an array of photodiode cells, the photodiode cells each include four buried photodiodes coupled by vertical transfer gate transistors to a single floating node diffusion. Each cell also has a reset transistor coupled to the floating node diffusion, a source follower transistor having gate coupled to the floating node diffusion, and a read select transistor coupled to the source follower transistor. The reset transistor, source follower transistor, and read select transistor have predominately gate and shape edges oriented at an angle greater than 30-degrees and less than 60-degrees from a line extending along an entire horizontal row of photodiodes of a photodiode array of the image sensor and are formed vertically above, and in the same integrated circuit as, the photodiodes of the photodiode array.

Abstract: A semiconductor device that includes a metal pad buried in the semiconductor substrate that is electrically connected to a metal interconnection structure and electrically isolated from the semiconductor substrate. The semiconductor substrate forms an opening that extends from a back surface to the metal pad. A method for manufacturing a semiconductor device with buried metal pad including depositing, in a recess of a semiconductor substrate, a metal pad, isolating the pad from the substrate, electrically connecting the metal pad to the frontside of the substrate and connecting the metal pad to the backside of the substrate with an opening. A method for stabilizing through-silicon via connections in semiconductor device including electrically coupling a metal interconnection structure to a metal pad submerged in a semiconductor substrate and forming a through-silicon via into the semiconductor substrate that contacts the metal pad.

Abstract: A flare-suppressing image sensor includes a first pixel formed in a substrate and a refractive element located above the first pixel. The refractive element has, with respect to a top surface of the substrate, a height profile having at least two one-dimensional local maxima in each of a first cross-sectional plane and a second cross-sectional plane perpendicular to the first cross-sectional plane. Each of the first and second cross-sectional planes is perpendicular to the top surface and intersects the first pixel.

Abstract: A comparator includes a first stage including a first output to generate a first output signal that transitions between an upper and lower voltage level in response to a comparison of first and second inputs of the first stage. A second stage includes an input coupled to receive the first output signal from the first output of the first stage, and a second output configured to generate a second output signal in response to the first output signal. A clamp circuit includes a first node and a second node. The first node is coupled to the first output of the first stage and the second node is coupled to a supply voltage. The clamp circuit is configured to clamp a voltage difference between the first node and the second node to clamp a voltage swing of the first output signal.

Abstract: An imaging device includes a photodiode array including a 2×2 grouping of N×N groupings of photodiodes. Each N×N grouping includes N2?1 image sensing photodiodes and a single phase detection autofocus (PDAF) photodiode that is arranged proximate to a center of the 2×2 grouping. A shared floating diffusion is coupled to each photodiode of a respective N×N grouping of photodiodes. An analog to digital converter (ADC) is configured to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next configured to generate a PDAF readout in response to charge transferred from the single PDAF photodiode to the shared floating diffusion. The ADC is then configured to generate a combined readout in response to charge transferred from the image sensing photodiodes combined with the charge transferred previously from the single PDAF photodiode in the shared floating diffusion.

Abstract: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.

Abstract: An image sensor includes a substrate having a plurality of small photodiodes and a plurality of large photodiodes surrounding the small photodiodes. The substrate further includes a plurality of deep trench isolation structures in regions of the substrate between ones of the small photodiodes and the large photodiodes. Each of large photodiodes having a full well capacity larger than each of the small photodiodes. The image sensor further includes an array of color filters disposed over the substrate, a first and second buffer layer disposed between the substrate and the array of color filters, metal grid structures disposed between the color filters and above the first buffer layer, and an attenuation layer portion above a region of the substrate between ones of the large and small photodiodes, the attenuation layer portion is between the first and second buffer layers and normal to an upper surface of the substrate.

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.