Patents Assigned to OmniVision Technologies
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Patent number: 9819930Abstract: A time of flight sensor includes control circuitry and a time of flight pixel array. The control circuitry is coupled to synchronously send a sync signal. The time of flight pixel array includes a plurality of time of flight pixel cells. Each one of the time of flight pixel cells includes a photosensor and a delay circuit. The photosensor is configured to generate an image signal in response to receiving photons from a light pulse reflected from an object. The delay circuit is coupled to generate a delayed sync signal in response to the sync signal. The delay circuit includes a delay transistor. The time of flight pixel array includes a transistor gradient where a transistor gate length of the delay transistor varies so that each of the time of flight pixel cells receive their respective delayed sync signal at a same time.Type: GrantFiled: May 26, 2015Date of Patent: November 14, 2017Assignee: OmniVision Technologies, Inc.Inventors: Tianjia Sun, Rui Wang, Tiejun Dai
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Patent number: 9819883Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.Type: GrantFiled: December 3, 2015Date of Patent: November 14, 2017Assignee: OmniVision Technologies, Inc.Inventors: Zhiyong Zhan, Qingfei Chen, Chin-Chang Pai
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Patent number: 9817048Abstract: A power supply noise measurement circuit includes a multiphase filter coupled to receive a power supply signal. The multiphase filter is coupled to output a first filtered power supply signal for a first phase, and a second filtered power supply signal for a second phase. A multiphase amplifier is coupled to the multiphase filter to sample offset voltages in response to the first filter power supply signal during the first phase to set up DC operation points in the multiphase amplifier, and generate an amplified power supply noise signal during the second phase. An overshoot detector is coupled to the multiphase amplifier to detect overshoot events in the amplified power supply noise signal, and an undershoot detector is coupled to the multiphase amplifier to detect undershoot events in the amplified power supply noise signal.Type: GrantFiled: December 9, 2015Date of Patent: November 14, 2017Assignee: OmniVision Technologies, Inc.Inventors: Yingkan Lin, Liang Zuo, Liping Deng
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Patent number: 9819908Abstract: A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed.Type: GrantFiled: August 7, 2013Date of Patent: November 14, 2017Assignee: Omnivision Technologies, Inc.Inventors: Gregory E. Johnson, Edward R. Dowski, Jr.
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Patent number: 9812478Abstract: An aerogel-encapsulated image sensor includes a device die with an image sensor fabricated thereon and an aerogel layer that encapsulates the image sensor. A method for encapsulating image sensor pixel arrays of respective bare image sensors formed on a sensor array sheet may include injecting an uncured aerogel portion on each image sensor pixel array, and curing each uncured aerogel portion. The step of curing may include at least one of (a) super-critical drying, (b) surface-modification drying, and (c) pinhole drying an uncured aerogel portion. The method may further include singulating the sensor array sheet into a plurality of aerogel-encapsulated image sensors. A method for encapsulating image sensor pixel arrays of respective bare image sensors on a device wafer may include forming an aerogel layer on each bare image sensor. The step of forming may include at least one of spin-coating, dip-coating, and spray-coating the aerogel layer.Type: GrantFiled: March 5, 2015Date of Patent: November 7, 2017Assignee: OmniVision Technologies, Inc.Inventors: Chun-Sheng Fan, Wei-Feng Lin
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Patent number: 9806122Abstract: A pixel array including an SixGey layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the SixGey layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the SixGey layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the SixGey layer.Type: GrantFiled: July 25, 2014Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Eric A. G. Webster, Howard E. Rhodes, Dominic Massetti
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Patent number: 9804367Abstract: A hybrid compound lens includes a substrate lens and a resin lens. The substrate lens has a non-planar substrate surface surrounded by a flange having a flange surface bordering the non-planar substrate surface and forming an obtuse angle therewith. The resin lens has a non-planar resin surface adjoining the substrate lens along the non-planar substrate surface. A lens wafer includes a substrate wafer and resin lenses. The substrate wafer has a top surface having non-planar surface features each bordered by a planar region of the top surface and forming an obtuse angle therewith. Each resin lens has a non-planar resin surface adjoining the substrate wafer along a non-planar surface feature. A method for fabricating a wafer-level hybrid compound lens includes depositing a resin portion on a non-planar feature of a side of a substrate. The method also includes forming the resin portion into a lens on the non-planar feature.Type: GrantFiled: November 4, 2015Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Tsung-Wei Wan, Wei-Ping Chen
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Patent number: 9806117Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.Type: GrantFiled: March 15, 2016Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Yi Ma
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Patent number: 9804368Abstract: A near-infrared hybrid lens system for imaging a wide field-of-view scene onto an image plane includes (a) a first cast lens positioned closest to the scene and at least partly transmissive to near-infrared light, (b) a second cast lens positioned closest to the image plane and at least partly transmissive to near-infrared light, and (c) a wafer-level lens at least partly transmissive to near-infrared light and disposed between the first cast lens and the second cast lens, wherein the wafer-level lens has (i) a planar substrate with a first surface facing away from the image plane and a second surface facing the image plane, (ii) a first lens element disposed on the first surface, and (iii) a second lens element disposed on the second surface.Type: GrantFiled: October 5, 2015Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Tingyu Cheng, Jau-Jan Deng
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Patent number: 9807294Abstract: An imaging system with on-chip phase-detection includes an image sensor with symmetric multi-pixel phase-difference detectors. Each symmetric multi-pixel phase-difference detector includes (a) a plurality of pixels forming an array and each having a respective color filter thereon, each color filter having a transmission spectrum and (b) a microlens at least partially above each of the plurality of pixels and having an optical axis intersecting the array. The array, by virtue of each transmission spectrum, has reflection symmetry with respect to both (a) a first plane that includes the optical axis and (b) a second plane that is orthogonal to the first plane. The imaging system includes a phase-detection row pair, which includes a plurality of symmetric multi-pixel phase-difference detectors in a pair of adjacent pixel rows and a pair, and an analogous phase-detection column pair.Type: GrantFiled: August 5, 2015Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Guansong Liu, Jizhang Shan, Chin Poh Pang, Xiaodong Yang
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Patent number: 9799699Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.Type: GrantFiled: September 24, 2014Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventors: Duli Mao, Vincent Venezia, Gang Chen, Dajiang Yang, Dyson H. Tai
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Patent number: 9799696Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material. The image sensor also includes a transfer gate electrically coupled to the photodiode to extract image charge from the photodiode in response to a transfer signal. A floating diffusion is electrically coupled to the transfer gate to receive the image charge from the photodiode. At least one isolation structure is disposed in the photodiode, and the at least one isolation structure extends from a surface of the semiconductor material into the photodiode.Type: GrantFiled: October 13, 2016Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventors: Dyson H. Tai, Duli Mao, Cunyu Yang, Gang Chen
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Patent number: 9798115Abstract: A compact three-surface wafer-level lens system for imaging a scene onto an image plane includes a one-sided wafer-level lens and a two-sided wafer-level lens disposed between the one-sided wafer-level lens and the image plane. The total track length of the wafer-level lens system is no more than 2.2 millimeters. The maximum transverse extent (in dimensions transverse to the optical axis) of the lens system and associated light propagating therethrough is no greater than 1.8 millimeters. The field of view angle of the lens system is at least 100 degrees.Type: GrantFiled: April 26, 2016Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventors: Chuen-Yi Yin, Jau-Jan Deng
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Patent number: 9800796Abstract: An imaging system includes an image sensor to capture a sequence of images, including a low dynamic range (LDR) image and a high dynamic range (HDR) image, and a processor coupled to the image sensor to receive the LDR image and the HDR image. The processor receives instructions to perform operations to segment the LDR image and HDR image into a plurality of segments. The processor also scans the plurality of LDR and HDR image segments to find a first image segment in the plurality of LDR image segments and a second image segment in the plurality of HDR image segments. The processor then finds interest points in the first and second image segments, and determines an alignment parameter based on matched interest points. The LDR image and the HDR image are combined in accordance with the alignment parameter.Type: GrantFiled: June 6, 2016Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventors: Wenchao Zhang, Timofey Uvarov, Sarvesh Swami, Willie Teck Tian Png, Donghui Wu
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Patent number: 9798046Abstract: A lens plate includes a transparent substrate wafer, and a plurality of lenses and spacers that are formed of a single portion of material on the transparent substrate wafer. An assembly includes a first lens plate that includes a first transparent substrate wafer, a plurality of first lenses and a plurality of spacers, the first lenses and spacers being formed of a single portion of material on said first transparent substrate wafer. The assembly also includes a second lens plate that includes a second transparent substrate wafer and a plurality of second lenses formed thereon, each of the plurality of second lenses corresponding to a respective one of the plurality of first lenses. The lens plates are aligned such that each of the plurality of first lenses aligns with the respective one of the plurality of second lenses, and the lens plates are bonded to one another.Type: GrantFiled: September 29, 2014Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventor: Leah Widmer
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Patent number: 9798114Abstract: Wafer-level optical elements and the concave spacer-wafer apertures in which they are formed are disclosed. The wafer-level optical elements include a spacer wafer comprising a plurality of apertures. Each aperture has a concave shape in a planar cross-section of the spacer wafer and an overflow region intersecting the planar cross-section. The wafer-level optical elements also include an array of optical elements, each optical element of the array being formed of cured flowable material within a respective one of the plurality of apertures. A portion of the cured flowable material forming each optical element extends into the overflow region of the respective aperture of the plurality of apertures. The spacer wafer includes a plurality of apertures, each of the plurality of apertures having a concave shape in a planar cross-section of the spacer wafer. Each of the plurality of apertures includes an overflow region intersecting the planar cross-section.Type: GrantFiled: June 17, 2014Date of Patent: October 24, 2017Assignee: OmniVision Technologies, Inc.Inventors: Edward Nabighian, Alan Martin
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Patent number: 9786249Abstract: A display system includes a processor coupled to receive image data from an image source and a frame timing circuit. The processor is coupled to output the image data and first sync signals, where each one of the first sync signals is output after M number of pixel values of the image data are output from the processor. The frame timing circuit is coupled to the processor to receive the image data and the first sync signals. The frame timing circuit is coupled to output X number of pixel values of the image data and second sync signals to a display, where the X number of pixel values is an integer multiple of the M number of pixel values of the image data. Each one of the second sync signals is output after X number of pixel values of the image data are output from the frame timing circuit.Type: GrantFiled: December 17, 2015Date of Patent: October 10, 2017Assignee: OmniVision Technologies, Inc.Inventor: Kevin Johnson
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Patent number: 9781362Abstract: An image sensor capable of capturing an image formed by a lens includes a substrate and a bonding wire. The substrate has a pixel array and a bonding pad on a top surface of the substrate between the pixel array and a substrate edge. The bonding wire is electrically connected to the bonding pad and has a region forming a non-zero angle with respect to the substrate top surface. The non-zero angle is in at least one of a lower and an upper angular range for minimizing reflection of incident light on the region from reaching the image sensor. The lower angular range is selected such that the region reflects the incident light away from the pixel array toward a plane including the lens. The upper angular range is selected such that the region reflects the incident light to a clearance between the bonding pad and the pixel array.Type: GrantFiled: March 22, 2016Date of Patent: October 3, 2017Assignee: OmniVision Technologies, Inc.Inventors: Chao-Hung Lin, Hong Jun Li, Ping-Hsu Chen, Denis Chu
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Patent number: 9778443Abstract: A three-surface wafer-level lens system for imaging a wide field-of-view scene onto an image plane includes (a) a first wafer-level lens with (i) a first substrate having a first planar surface facing the image plane, and (ii) a first lens element bonded to the first planar surface and having a first lens surface facing the image plane, and (b) a second wafer-level lens with (i) a second substrate having a second planar surface facing away from the image plane, (ii) a third substrate bonded to the second substrate and having a third planar surface facing the image plane, (iii) a second lens element bonded to the second planar surface and having a second lens surface facing away from the image plane, and (iv) a third lens element bonded to the third planar surface and having a third lens surface facing the image plane.Type: GrantFiled: October 5, 2015Date of Patent: October 3, 2017Assignee: OmniVision Technologies, Inc.Inventors: Tingyu Cheng, Jau-Jan Deng
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Patent number: 9774811Abstract: Apparatuses and methods for image sensors with increased analog to digital conversion range are described herein. An example method may include disabling a first auto-zero switch of a comparator, the first auto-zero switch coupled to a ramp voltage input of the comparator, increasing, by a ramp generator, an auto-zero voltage level of a ramp voltage provided to the ramp voltage input of the comparator, and disabling a second auto-zero switch of the comparator, the second auto-zero switch coupled to a bitline input of the comparator.Type: GrantFiled: September 27, 2016Date of Patent: September 26, 2017Assignee: OmniVision Technologies, Inc.Inventors: Hiroaki Ebihara, Zheng Yang