Abstract: A method for producing an optoelectronic device comprises steps for providing a package with a first surface and a second surface, wherein an electrically conductive chip carrier is embedded in the package and is accessible at the first surface and at the second surface, and for applying an insulation layer on the second surface of the package by means of aerosol deposition.

Abstract: A headlight device is disclosed. In an embodiment a headlight device includes a laser light source configured to emit collimated primary radiation, a conversion element comprising conversion regions configured to at least partly convert the collimated primary radiation into secondary radiation and to form luminous regions during operation, and separating webs which separate the conversion regions from one another, wherein the separating webs are nontransmissive to the collimated primary radiation and secondary radiation and a deflection unit configured to direct the collimated primary radiation onto the conversion element and to guide the collimated primary radiation as a scanning beam over partial regions of the conversion element.

Abstract: According to an embodiment, a polyhedron may be provided. The polyhedron may include a first luminescent face; and a second luminescent face.

Abstract: The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (10), comprising the following steps: A) arranging at least one semiconductor chip (2) on a carrier (1), B) applying an electrically insulating photoresist (3) to a top side (1a) of the carrier (1) and to the semiconductor chip (2), C) curing the photoresist (3) with a baking step, D) patterning the photoresist (3) by exposure, F) developing the photoresist (3), wherein the photoresist (3) is removed at least from a radiation penetration surface (2b) of the semiconductor chip (2), G) again curing the photoresist (3) with a baking step, and H) applying an electrically conductive contact layer (4) to the photoresist (3), wherein the electrically conductive contact layer (4) is in places at a distance (A) from a marginal surface (3a) of the photoresist (3) which faces towards the semiconductor chip (2), wherein the marginal surface (3a) facing towards the semiconductor chip (2) is

Abstract: The invention relates to a radiation-emitting, organic component comprising a radiation-permeable carrier body (1) having a first surface (1a) on a top side of the carrier body (1), a radiation-permeable, structured layer (2) that is arranged on the first surface (1a) and covers same at least in places, a radiation-permeable first electrode (3) that is arranged on the side of the structured layer (2) facing away from the carrier body (1), a layer stack (10) that is arranged on the side of the first electrode (3) facing away from the structured layer (2) and comprises an organic, active region, and a second electrode (6), wherein the active region (10a) can be electrically contacted via the first electrode (3) and the second electrode (6), the structured layer (2) is different from the radiation-permeable carrier body (1), and the structured layer (2) comprises structures (2a) for refracting and/or scattering electromagnetic radiation generated in the active region (100) during operation.

Abstract: A method for producing a lighting module is provided. The method includes providing a light source substrate populated with at least one semiconductor light source, laterally surrounding the at least one semiconductor light source by a wall, applying at least one prefabricated diffuser element to at least one semiconductor light source, introducing potting compound into the space surrounded by the wall up to a height at which both the at least one semiconductor light source, and potting at least part of the at least one diffuser element.

Abstract: An active damping circuit and system including the same are disclosed. The active damping circuit includes a first resistor, a second resistor, a third resistor, a first transistor, a second transistor, a capacitor, and a microcontroller. The first resistor is connected to a base of the first transistor, and to the microcontroller output. The second resistor is connected to a positive voltage, and to a collector of the first transistor and a gate of the second transistor. The third resistor is connected to a logic ground, and to a source of the second transistor. The capacitor is connected to the collector of the first transistor, the second resistor, and the gate of the second transistor. A drain of the second transistor, and the first capacitor, and the second capacitor, and the microcontroller output, are also connected to the logic ground. An emitter of the first transistor is connected to ground.

Abstract: A method for producing an organic light-emitting component is disclosed with providing a carrier, forming a first electrode over the carrier, forming an organic functional layer structure over the first electrode, and forming a second electrode over the functional layer structure. The first and second electrodes and the functional layer structure overlap in an optically active region which extends in the lateral direction and is embodied to generate light. In an optically inactive region extending over the carrier in the lateral direction, an electrically conductive contact layer is formed over the carrier, so that it is in direct physical and electrical contact with the first electrode and/or the second electrode. A first contact section and at least one second contact section of the layer are separated from one another by a lithographic process, so that they are electrically insulated from one another. The layer is structured by a laser beam.

Abstract: Various embodiments may relate to an optoelectronic component, including an organic functional layer structure, and an electrode on or above the organic functional layer structure. The electrode is electrically conductively coupled to the organic functional layer structure. The electrode includes an optically transparent or translucent matrix including at least one matrix material, and particles embedded into the matrix. The particles have a refractive index that is greater than the refractive index of the at least one matrix material. A difference in refractive index between the at least one matrix material and the particles embedded into the matrix is at least 0.05.

Abstract: The invention proposes a lighting device (1) comprising a wavelength conversion arrangement (12) and a static band-stop filter (14). The wavelength conversion arrangement (12) comprises two wavelength conversion elements, which can be excited to emit conversion light by means of excitation radiation emitted by an excitation source (2). In order to increase the color space which is addressable by means of the two wavelength conversion elements, with the aid of the band-stop filter (14) the shorter dominant wavelength of the conversion light of both wavelength conversion elements is shortened and the longer dominant wavelength is lengthened. For this purpose, the peak wavelength of the band-stop filter (14) is chosen such that it lies between the two dominant wavelengths of the conversion light emitted by the two wavelength conversion elements. The use of a static band-stop filter (14) designed in this way makes it possible to dispense with separate filter elements for each wavelength conversion element.

Abstract: An optoelectronic semiconductor component includes a carrier having a carrier top side and an opposing carrier underside, wherein the carrier top sides each have a larger area than the associated carrier undersides, the carrier parts fixedly connect to one another via at least one potting body and the potting body together with the carrier parts represents a bearing component of the semiconductor component so that all carrier undersides end flush with the potting body, the light-emitting semiconductor chips electrically connect in series, the metal layer on the carrier top side is structured into conductor tracks and into electrical connection surfaces, and the electrical connection surfaces on the carrier top side are electrically insulated from the associated carrier underside so that the carrier underside of the carrier part the semiconductor chips are arranged on is potential-free and is completely covered with the metal layer.

Abstract: Various embodiments may relate to a method for working an apparatus having at least one electrical layer structure. The electrical layer structure includes a dielectric layer in physical contact with an electrically conductive layer and the electrical layer structure has a first electrical conductivity. The method may include forming an electrical connection to the dielectric layer of the electrical layer structure, and forming an electrical voltage profile at the electrical connection in such a way that a second electrical conductivity is formed; wherein the second electrical conductivity is greater than the first electrical conductivity. The electrical layer structure has the second electrical conductivity after the reduction of the electrical voltage profile.

Abstract: The invention relates to a circuit assembly for operating at least one lighting means, comprising at least one master device; at least one slave device; and a bus system having at least one bus, by means of which bus system the at least one master device and the at least one slave device are coupled; wherein the bus is designed as a two-wire cable, wherein the at least one master device has at least one feeding connection, which is coupled to the bus and is designed to place a control signal on the bus, wherein the at least one master device is coupled to a first voltage supply; wherein the at least one slave device comprises a non-feeding connection, which is coupled to the bus, wherein the slave device comprises a connection for at least one lighting means, a second voltage supply, and a read-out device for reading out the control signal on the bus, wherein the read-out device comprises a potential-isolating device and wherein the connection for the at least one lighting means and the second voltage supply

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the method includes applying a semiconductor layer sequence on a substrate, structuring the semiconductor layer sequence by forming trenches thereby separating the semiconductor layer sequence into a plurality of semiconductor bodies and applying an insulating layer covering the trenches and vertical surfaces of the plurality of semiconductor bodies. The method further includes forming a plurality of tethers by structuring the insulating layer in regions covering the trenches, locally detaching the substrate from the plurality of semiconductor bodies, wherein the tethers remain attached to the substrate and selectively picking up each semiconductor body by separating the tethers from the substrate, wherein each semiconductor body comprises a portion of the semiconductor layer sequence.

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Abstract: A method for operating an optoelectronic assembly which includes at least one component string having at least one section, wherein the section includes at least one light emitting diode element, is provided. According to the method, the component string is supplied with electrical energy, the supply of the component string with electrical energy is interrupted, a total voltage is detected, which is present between an input and an output of the section of the component string, the total voltage is compared with a sum of threshold voltages of all the light emitting diode elements. It is identified that the section has no short circuit if the total voltage is equal or at least approximately equal to the sum of the threshold voltages, and/or it is identified that the section has a short circuit if the total voltage is less than the sum of the threshold voltages.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Abstract: A method for producing an optoelectronic component is disclosed. A first layer which has a dielectric to the surface of a semiconductor crystal. A photoresist layer is applied and structured on the first layer. The photoresist layer is structured in such a way that the photoresist layer has an opening, The first layer is partially separated in order to expose a lateral region of the surface. A contact area having a first metal is applied in the lateral region of the surface. The photoresist layer is removed. A second layer, which comprises an optically transparent, electrically conductive material, and a third layer, which comprises a second metal, are applied.

Abstract: In various embodiments, an organic optoelectronic component is provided. The organic optoelectronic component may include a first electrode, an organic functional layer structure over the first electrode, and a second electrode over the organic functional layer structure. Optionally, the organic functional layer structure includes a charge carrier pair generation layer structure. At least one of the electrodes and/or the charge carrier pair generation layer structure includes electrically conductive nanostructures, the surfaces of which are at least partially coated with a coating material.

Abstract: In various embodiments, an optoelectronic component is provided. The optoelectronic component may include an electrode, and an organic functional layer structure formed for emitting an electromagnetic radiation or converting an electromagnetic radiation into an electric current. The electrode has a surface which is reflective with respect to the electromagnetic radiation, and wherein the organic functional layer structure is formed on or over the reflective surface of the electrode and is electrically coupled thereto. The reflective surface has a structuring.