Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.

Abstract: There is described an edge assembly for attaching to flexible substrates. An example assembly may comprise at least a first edge component and a compression retainer component. The first edge component may include at least one conductor to mate with one or more conductors on a surface of a flexible substrate after the first edge component is affixed to an edge of the flexible substrate by the compression retainer component. The edge assembly may also comprise a second edge component, wherein the flexible substrate may be compressed between the first and second edge components and held in place by the compression retainer component. The first edge component may further comprise an extension, including the at least one conductor, that may be used to convey power from a power source to the flexible substrate. The extension is accessible from outside the flexible substrate via a port in the compression retainer component.

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

Abstract: A method for operating an optoelectronic assembly which includes at least one component string having at least one section, wherein the section includes at least one light emitting diode element, is provided. According to the method, the component string is supplied with electrical energy, the supply of the component string with electrical energy is interrupted, a total voltage is detected, which is present between an input and an output of the section of the component string, the total voltage is compared with a sum of threshold voltages of all the light emitting diode elements. It is identified that the section has no short circuit if the total voltage is equal or at least approximately equal to the sum of the threshold voltages, and/or it is identified that the section has a short circuit if the total voltage is less than the sum of the threshold voltages.

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract: A method for producing an organic light-emitting component is disclosed with providing a carrier, forming a first electrode over the carrier, forming an organic functional layer structure over the first electrode, and forming a second electrode over the functional layer structure. The first and second electrodes and the functional layer structure overlap in an optically active region which extends in the lateral direction and is embodied to generate light. In an optically inactive region extending over the carrier in the lateral direction, an electrically conductive contact layer is formed over the carrier, so that it is in direct physical and electrical contact with the first electrode and/or the second electrode. A first contact section and at least one second contact section of the layer are separated from one another by a lithographic process, so that they are electrically insulated from one another. The layer is structured by a laser beam.

Abstract: A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a second nitridic semiconductor layer having at least one opening on the first nitridic semiconductor layer, removing at least pail of the first nitridic semiconductor layer through the at least one opening in the second nitridic semiconductor layer, growing a third nitridic semiconductor layer on the second nitridic semiconductor layer, wherein the third nitridic semiconductor layer covers the at least one opening at least in places in such a way that at least one cavity free of a semiconductor material is present between the growth substrate and a subsequent semiconductor layers and removing the growth substrate.

Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

Abstract: A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength ?1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength ?2, which is greater than the first wavelength ?1.

Abstract: Radiation receiver apparatus with a radiation receiver and a radiation entrance face, wherein the radiation receiver includes an active region that detects radiation with a target wavelength in the near-infrared, an optical element is arranged between the radiation entrance face and the radiation receiver, an optical axis of the optical element extends through the radiation receiver, the optical element is shaped and arranged relative to the radiation receiver such that, of radiation incident on the radiation entrance face at an angle of greater than or equal to 40° to the optical axis, at most 10% is incident on the radiation receiver, and a visible light filter is formed between the radiation receiver and the radiation entrance face.

Abstract: An optoelectronic component and a method for manufacturing an optoelectronic component are provided. In an embodiment, the optoelectronic component includes a layer sequence having an active layer configured to emit electromagnetic primary radiation, a converter lamina disposed in a beam path of the electromagnetic primary radiation and a bonding layer disposed between the layer sequence and the converter lamina, wherein the bonding layer comprises an inorganic-organic hybrid material having Si—O—Al bonds and/or Si—O—Zr bonds.

Abstract: Various embodiments may relate to an optical unit for a light-emitting structure, a light-emitting structure, and a light box comprising the light-emitting structure. The optical unit includes a body and a light-blocking structure, wherein the body includes at least one reflective surface, wherein the light-blocking structure includes a first light-blocking structure and a second light-blocking structure, wherein the first light-blocking structure is formed in one piece with the body, and the second light-blocking structure is arranged in the first light-blocking structure, wherein the first light-blocking structure is arranged to at least partially surround the reflective surface, to block the light leaks from the reflective surface by the second light-blocking structure.

Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. An embodiment of an optoelectronic device includes a carrier, an electrically conductive layer arranged on the carrier, at least one semiconductor chip comprising an active layer for generating electromagnetic radiation, wherein the semiconductor chip is electrically conductively and mechanically connected with the carrier via the electrically conductive layer. The device further comprises a holder, wherein a surface of the carrier remote from the semiconductor chip is arranged on the holder, wherein the carrier is mechanically connected with the holder by at least one fastening element and is fastened to the holder, wherein the fastening element passes completely through the carrier, and wherein the semiconductor chip is electrically conductively connected to the holder by the fastening element.

Abstract: A connecting element for connecting at least two rails adapted for mounting semiconductor light sources. The connecting element has a bottom wall and two side walls emerging from the bottom wall on opposite sides. The walls form a U-shaped profile. The connecting element is configured for accommodating at least one rail adapted for mounting semiconductor light sources in an accommodating area delimited by the bottom wall and the side walls, and the connecting element has latching elements arranged with a regular longitudinal pattern on at least one wall for latching with the accommodated rail.