Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a p-doped region, an active region configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor chip, an n-doped region, a cover layer and a barrier region. The active region is arranged between the p-doped region and the n-doped region in a vertical direction, wherein the active region is based on a III-V semiconductor compound and the barrier region includes gallium, wherein the barrier region is configured to inhibit penetration of defects into the active region, and wherein the cover layer is arranged on the barrier region, the cover layer having a structured surface.

Abstract: A method for producing an electronic device and an electronic device are disclosed. In an embodiment a method for producing an electronic device includes attaching semiconductor chips on a carrier, applying a fluoropolymer to main surfaces of the semiconductor chips facing away from the carrier and a main surface of the carrier facing the semiconductor chip thereby forming an encapsulation layer including a fluoropolymer, structuring the encapsulation layer thereby forming cavities in the encapsulation layer and applying a metal layer in the cavities.

Abstract: A method of producing a surface-mountable multi-chip component includes providing a chip arrangement including a metallic conductor structure exposed at a rear side, a plurality of semiconductor chips and an housing material; and forming a solder stop coating on a rear side of the chip arrangement, wherein the solder stop coating separates connection regions of the conductor structure.

Abstract: A method of producing an optoelectronic component includes providing a carrier; securing a sheet including a wavelength-converting material on a top side of the carrier; arranging a grid structure on a top side of the sheet; arranging an optoelectronic semiconductor chip in an opening of the grid structure on the top side of the sheet; arranging a potting material on the top side of the sheet, wherein the grid structure and the optoelectronic semiconductor chip are at least partly embedded into the potting material, and a composite body including the potting material, the sheet, the grid structure and the optoelectronic semiconductor chip is formed; and detaching the composite body from the carrier.

Abstract: A lighting device and a lighting system, respectively, are to be able to be more comfortably monitored. Thereto, a lighting device with an illuminant, a transmitting device arranged in or at the illuminant for wirelessly transmitting a locating signal to a terminal external with respect to the lighting device is proposed. Moreover, the lighting device comprises a data processing device arranged in or at the illuminant for extracting illuminant data about the illuminant and for providing this data for the transmitting device. The transmitting device is formed to also transmit the illuminant data to the external terminal besides the locating signal.

Abstract: A radiation-emitting semiconductor chip includes a substrate; an epitaxial semiconductor layer sequence having an active zone that generates electromagnetic radiation of a first wavelength range, wherein the substrate is transparent to electromagnetic radiation of the active zone; and an optically active layer arranged on a side surface of the substrate and on a rear main surface of the semiconductor chip, which lies opposite to a radiation exit surface of the semiconductor chip.

Abstract: A mount (10) and an optoelectronic component (100) with the mount (10) are provided, wherein the mount (10) comprises a moulding (5), at least one through-contact (41, 42) and a plurality of reinforcing fibres (52), wherein the moulding (5) is formed from an electrically insulating moulding material (53), the through-contact (41, 42) is formed from an electrically conductive material, and the reinforcing fibres (52) produce a mechanical connection between the moulding (5) and the through-contact (41, 42) by the reinforcing fibres (52) being arranged in certain regions of the moulding (5) and arranged in certain regions of the through-contact (41, 42). A method for producing a mount or a component with such a mount is also provided.

Abstract: A method for producing an optoelectronic device is disclosed. The method include preforming an inductive excitation of a current by an inductive component of the optoelectronic device such that the optoelectronic device emits electromagnetic radiation, measuring of at least one electro-optical characteristic of the optoelectronic device and applying a converter material to an emission side of the optoelectronic device, wherein a quantity of the converter material is determined from the measurement of the electro-optical characteristic.

Abstract: Systems and methods disclosed herein include a distance detection system comprising an emitter unit configured to emit electromagnetic measurement pulses for distance measurements; and a receiver unit configured to capture the electromagnetic measurement pulses, characterized in that at least one of a shape, a temporal distance, and a number of the emitted measurement pulses are varied.

Abstract: In various embodiments, a lighting system is provided. The lighting system includes at least two visual light communication units (VLC units), and at least one effect luminaire, at which one of the VLC units is provided. The further VLC unit is arrangeable at an object. At least one item of state information of at least one of the object or the effect luminaire is transferable between the VLC units by at least one light signal.

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

Abstract: A ceramic wavelength converter assembly has a layered structure. The ceramic wavelength converter assembly includes two first layers having an undoped host material, or a doped host material, two second layers having a barrier material and being disposed between the two first layers and a third layer having an undoped host material, or a doped host material and being disposed between the two second layers. The two first layers include the undoped host material and the third layer includes the doped host material, or the two first layers include the doped host material and the third layer includes the undoped host material.

Abstract: A filament structure, a lighting device with filament structures, a method for manufacturing a lighting device and a method for manufacturing a filament structure are disclosed.

Abstract: A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles.

Abstract: An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

Abstract: An apparatus includes an information system with at least one pattern generator having a plurality of light nodes, each light node including at least one light emitting element, such as an LED. The at least one pattern generator is positioned with regard to a user of the apparatus such that it is located in the peripheral view of the user. A controller is operatively coupled to the pattern generator and configured to selectively initiate the generation of a visual light pattern on the pattern generator, the visual light pattern being indicative of information which is to be provided to the user of the apparatus.

Abstract: A sensor element is disclosed.

Abstract: A display device and a method for producing a display device are disclosed. In an embodiment a display device includes a flat textile support and a plurality of optoelectronic semiconductor components disposed on the support. Each semiconductor component includes a connection substrate comprising a plurality of electrical connections, the plurality of electrical connections electrically connected via electrically conductive contact threads, wherein each electrical connection is realized by a contact hole which completely penetrates through the semiconductor component and, viewed in a plan view, is surrounded all around by the connection substrate and wherein, in each case, at least one contact thread runs through the contact hole so that the contact thread is arranged in part on an upper side of the semiconductor component facing away from the support, a plurality of semiconductor chips for generating light and at least one control unit for adjusting a color location of the light.