Abstract: A multipixel LED component includes a plurality of emission zones; a plurality of conversion elements adapted to convert radiation emitted from the emission zones into radiation of another wavelength range; a controller including a plurality of current sources and a transmitter adapted for wireless data transmission; and two electrical contact structures through which the LED component is energized, wherein the controller mechanically fixedly connects to the emission zones, each of the current sources is assigned to one of the emission zones biuniquely, the transmitter receives signals to control the current sources, the current sources are controllable according to the signals, each current source operates the emission zone assigned to it, and the number of emission zones is greater than the number of contact structures.

Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

Abstract: A method of manufacturing a plurality of conversion elements includes providing a first conversion layer on an auxiliary carrier, the first conversion layer converting electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, applying a second conversion layer on the first conversion layer, the second conversion layer converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range, and separating the generated layer stack such that a plurality of conversion elements are generated, wherein each conversion element includes at least one first converting region having material of the first conversion layer, each conversion element includes at least one second converting region having material of the second conversion layer, and the converting regions are arranged laterally side by side.

Abstract: A composite component and methods for producing a composite component are described herein. In some aspects, a method for producing a composite component may include molding a body from a plastic material, such that the molded body has at least one recess arranged adjacent to at least one respective projection. This method may also include pressing the at least one respective projection such that the plastic material of the molded body is thereby displaced into an opening-side region of the at least one recess adjacent thereto. The method may further include introducing flowable filler material into the at least one recess and solidifying the filler material. The filler material may be an electrically conductive filler material.

Abstract: A method of making a wavelength converter includes (a) combining a luminescent material and inorganic nanoparticles with a liquid methoxy methyl polysiloxane precursor to form a liquid dispersion, the precursor having a methoxy content of 10 to 50 weight percent (wt %), the inorganic nanoparticles including at least 10 weight percent of the dispersion; (b) applying the liquid dispersion to a non-stick surface; (c) curing the liquid dispersion to form a filled polymer sheet; and (d) cutting the sheet to form individual wavelength converters having a desired shape.

Abstract: The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

Abstract: A light fixture, preferably for stage, is provided with a source assembly configured to generate a light beam mainly along an emission direction; and with at least a first optical assembly arranged downstream of the source assembly along the emission direction; the first optical assembly comprising at least one mixing device configured to mix the light beam passing through it; the mixing device comprising an optical mixing element and a moving device configured to move the optical mixing element between a position of non-interference with the light beam emitted by the source assembly and at least one position of interference with the light beam emitted by the source assembly.

Abstract: A TOF camera for determining a distance to an object comprising: a radiation source configured to emit electromagnetic radiation toward the object, radiation-sensitive sensor elements configured and arranged to detect the electromagnetic radiation reflected/scattered by the object, an optical element arranged to influence the emitted electromagnetic radiation in the radiation path of the reflected/scattered electromagnetic radiation between the object and the sensor elements, a computing unit electrically connected to the radiation source and sensor elements configured to determine a time duration required by the electromagnetic radiation from the radiation source to the object; from the object to the sensor elements; and to determine the distance between the TOF camera and the object depending on the time duration determined.

Abstract: A heat sink includes an extruded component, a cast component, and an interface layer. The extruded component includes a first aluminum material and is configured to be coupled to a solid state light source. The cast component includes a second aluminum material overmolded onto a portion of the extruded component to form the interface layer. The interface layer is formed of at least one of the first and the second aluminum materials and abuts against and couples the extruded component to the cast component.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.

Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10).

Abstract: A luminous fiber may include a flexible printed circuit board extending in a length direction of the fiber, at least one electrically conductive trace being formed on the flexible printed circuit board, at least one light emitting component being arranged on the flexible printed circuit board and being electrically connected to the trace, and a lateral strengthening structure for strengthening the luminous fiber in lateral direction perpendicular to the length direction. The lateral strengthening structure may include two frame bars, which are formed on the flexible printed circuit board and which extend in the length direction of the fiber. The lateral strengthening structure may include several lateral support elements, which are formed on the flexible printed circuit board between the frame bars and which are coupled to the frame bars.

Abstract: A component includes a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the carrier layer, and the carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component.

Abstract: An organic electronic component is disclosed. In an embodiment an organic electronic component includes at least one organic layer having a fluorinated sulfonimide metal salt of the following formula: wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, where 1?n?7, and wherein R1, R2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

Abstract: A device having a reinforcement layer and a method for producing a device are disclosed. In an embodiment a device includes a carrier plate, an electronic component, a shaped body and a reinforcement layer, wherein the electronic component is laterally enclosed by the shaped body, wherein, in a vertical direction, the electronic component is arranged between the carrier plate and the reinforcement layer, wherein the shaped body has a thermal expansion coefficient which is at least three times as large as a thermal expansion coefficient of the carrier plate and at least three times as large as a thermal expansion coefficient of the reinforcement layer, and wherein the carrier plate and the reinforcement layer adjoin the shaped body at least in places and are configured to reduce deformation of the shaped body in an event of temperature fluctuations.

Abstract: A white light source includes an arrangement of light-emitting diodes, wherein the light-emitting diodes are subdivided into first light-emitting diodes and second light-emitting diodes, and a conversion element configured to absorb light emitted by the light-emitting diodes and generate converted light with a longer wavelength than the emitted light, wherein the conversion element includes a first luminescent conversion material in a first matrix material, the first matrix material with the first luminescent conversion material is arranged two-dimensionally in a continuous layer above the first and second light-emitting diodes, the conversion element includes a second luminescent conversion material in a second matrix material, and the second matrix material with the second luminescent conversion material is arranged only above the second light-emitting diodes.