Abstract: An optoelectronic component includes a carrier with at least two radiation sources that generate electromagnetic radiation, including a housing consisting of a material non-transmissive to the electromagnetic radiation from the radiation sources, wherein at least two openings are provided in the housing, each opening is closed with a plate, the plate consists of a material transmissive to the electromagnetic radiation from the respective radiation source, and a radiation source is respectively assigned to an opening.

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Abstract: Techniques are disclosed for detecting stationary presence using IR sensor array. A number of IR images may be captured. Of the IR images captured by the IR sensor array certain pixels can be identified as causing false triggers. These pixels can be identified and filtered to be ignored. The non-filtered pixels of IR images may be averaged over various time intervals to calculate a number of average IR frames. The difference between these average IR frames provides a delta frame. A mask frame may be calculated as the summation of delta frames over time, and the value of the mask frame may be used to detect a stationary human presence even when no delta value is calculated. Alternatively, the mask frame may be used to calculate a background frame that represents the IR signature of stationary or cyclical objects within the scanned area that are not intended to trigger the presence detection system. A stationary presence may be determined by subtracting the background frame from a current average IR frame.

Abstract: Systems and methods disclosed herein includes a measurement device to enable dimensional metrology and/or 3D reconstruction of an object. The measurement device is positioned between the object and reference luminaires (e.g., light emitting diodes or other light sources). The measurement device uses the reference luminaires to determine the position and orientation of the measurement device. The measurement device may include a camera oriented towards the reference luminaires and may acquire/use images of reference luminaires to determine the position and orientation of the measurement device. Using the reference luminaires, the system may determine positions and orientations of the measurement device when the images of the reference luminaires are taken. The system may be configured to use the positions and the orientations of the measurement device to determine dimensions and/or 3D models of the object.

Abstract: Techniques are disclosed for decoding light based communication (LBC) messages transmitted between a transmitter device and a receiver device. The receiver device includes a processor that executes a process to decode a received LBC message. The processor determines a moving average and removes the moving average to provide a second digital message (with the moving average removed), to account for any noises or interferences. The moving average may be determined using a length-preserving moving average. The peak location in the second digital message is identified and used as a start position for synchronization when the peak location is above the threshold. Sampling points are derived, and logical maximum and minimum values (1's and 0's) are assigned to one or more of the sampling points. The logical values are decoded to generate a decoded sequence of data representative of the received LBC message.

Abstract: Techniques are disclosed for measuring an amount of flicker produced by a light source. In one embodiment, a flicker measuring device includes a photo sensor to measure the amount of light produced by the light source, a dedicated processor to receive and process data from the photo sensor, a memory bus coupled to an analog-to-digital converter (ADC) and to a first memory, and a direct memory access (DMA) bus coupled to the ADC and to a second memory. In another embodiment, a flicker measuring system uses a light sensor, an associated circuit and a portable computing device (PCD), such as a smart phone, to measure an amount of flicker produced by a light source by sending an electrical signal from the light source and associated circuit via an audio output to an audio sub-system of the PCD, so that the PCD may calculate the flicker value.

Abstract: Various implementations disclosed herein includes a method for operating lighting fixtures in horticultural applications. The method may include receiving a user input of a desired irradiance for a first color channel of one or more lighting fixtures that irradiates a plant bed, in which each of the one or more lighting fixtures comprises at least one light emitting diode (LED) array, determining, for each of the one or more lighting fixtures, a PWM setting of the first color channel such that each of the one or more lighting fixtures irradiate the plant bed at the desired irradiance based on calibration data stored in each of the one or more lighting fixtures, and applying, to each of the one or more lighting fixtures, the determined PWM setting of the first color channel.

Abstract: A method of operating an optoelectronic component, including a plurality of picture elements and a plurality of temperature sensors, wherein the picture elements are each configured to emit light, and the temperature sensors thermally conductively connect to the picture elements, the method including acquiring temperature values supplied by the temperature sensors; and controlling the picture elements in dependence on the acquired temperature values.

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Abstract: An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.

Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.

Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.

Abstract: A measuring arrangement having an optical transmitter and an optical receiver are disclosed. In an embodiment a measuring arrangement includes an optical transmitter configured to transmit electromagnetic measuring radiation into a transmission space, an optical receiver configured to receive measuring radiation reflected by an object in a reception space and a covering configured to reduce reception of an interference radiation by the receiver, wherein the interference radiation is measuring radiation not reflected by the object.

Abstract: An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.

Abstract: An optoelectronic device and a method are disclosed.

Abstract: A method produces a plurality of conversion elements including: A) providing a first carrier; B) applying a first element to the first carrier using a first application technique, the first element including a conversion material, the first application technique being different from compression molding; C) applying a second element to the first carrier by a second application technique, the second element including quantum dots, the quantum dots being introduced into a matrix material and being different from the conversion material, the second application technique being molding or compression molding; D) hardening of the matrix material; E) optionally, rearranging the arrangement produced according to step D) to a second carrier; and F) separating so that a plurality of conversion elements are generated.

Abstract: A display, a circuit arrangement for a display and a method of operating a display are disclosed. In an embodiment a display includes a voltage supply and a plurality of pixels. Each pixel includes a given number of light emitters, the light emitters being arranged in parallel electric lines with a light emitter per electric line, wherein the voltage supply is adapted to provide an electric voltage to each of the parallel electric lines. Each electric line comprises a current control element, wherein the current control element of an electric line is configured to control an electric current flowing through the light emitter arranged in the electric line.

Abstract: An organic optoelectronic component includes an organic functional layer stack between a first electrode and a second electrode including a light-emitting layer formed to emit a radiation during operation of the component, and a coupling-out layer arranged above the first electrode and/or the second electrode which is in a beam path of the radiation of the light-emitting layer, wherein the coupling-out layer includes a structured layer and a planarization layer arranged thereabove and the structured layer has a structured surface structured at least in places, the planarization layer planarizes the structured surface of the structured layer, and a difference in the refractive indices of the structured layer and the planarization layer is smaller than 0.3 at least in places.

Abstract: A display, a circuit arrangement for a display and a method of operating a display are disclosed. In an embodiment a display includes a plurality of pixels, each pixel of the plurality of pixels includes a given number of light emitters, a current control element for each light emitter, the current control element configured to control an electric current through the light emitter and at least one digital circuit element for each light emitter, the at least one digital circuit element configured to provide at least one data value to the current control element and the at least one data value being indicative of the current through the light emitter.

Abstract: Various implementations disclosed herein include a method for operating a LIDAR sensor, comprising repeatedly performing measurements in a respective measurement time window (M), at the beginning of which at least one measurement light pulse (A) having at least one predefined wavelength is emitted by the LIDAR sensor, and determining whether a light pulse (A?) having the at least one predefined wavelength is detected by the LIDAR sensor within the measurement time window (M), wherein a time interval (D1, D2, D3) between two consecutive measurement time windows (M) is varied.