Abstract: A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

Abstract: A distance measurement performing a signal propagation time-based measurement of a distance from an object located in a sensing field, the unit including an emitter unit having a plurality of emitters for emitting pulses and a receiver unit for receiving echo pulses. The distance measurement unit is configured for measurement such that the echo pulses are associated with the different solid angle segments and at least two of the emitters emit pulses into at least some of the solid angle segments.

Abstract: A lighting device (2) mitigating motion sickness experienced by an occupant in a moving vehicle having at least one light source (90) and an operating unit (60, 70, 80, 120, 130) for recording data of a vehicle movement and/or a control signal that corresponds thereto, wherein the light source (90) outputs a light pattern on the basis of the recorded data and/or of the control signal, depending on a speed, an acceleration, a change in the acceleration and/or a change in direction of the vehicle in a respective axial component in the direction of travel as well as a transverse component orthogonal thereto.

Abstract: A video-wall module is disclosed. In an embodiment a video-wall module includes a printed-circuit board, a plurality of light-emitting diode chips arranged at the printed-circuit board, a circuit chip fixed to the printed-circuit board, wherein the circuit chip is connected with electrical connections of the light-emitting diode chips in order to electrically actuate the light-emitting diode chips and a housing for the circuit chip at least partially formed by the printed circuit board, wherein the light-emitting diode chips are divided into a first area and a first edge area surrounding the first area, and wherein the light-emitting diode chips in the first area comprise a smaller radiation wavelength than the light-emitting diode chips in the first edge area on average at the same temperature.

Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

Abstract: A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Abstract: Techniques are disclosed for measuring an amount of flicker produced by a light source. In one embodiment, a flicker measuring device includes a photo sensor to measure the amount of light produced by the light source, a dedicated processor to receive and process data from the photo sensor, a memory bus coupled to an analog-to-digital converter (ADC) and to a first memory, and a direct memory access (DMA) bus coupled to the ADC and to a second memory. In another embodiment, a flicker measuring system uses a light sensor, an associated circuit and a portable computing device (PCD), such as a smart phone, to measure an amount of flicker produced by a light source by sending an electrical signal from the light source and associated circuit via an audio output to an audio sub-system of the PCD, so that the PCD may calculate the flicker value.

Abstract: Aspects of the present disclosure include arrays of motion sensors that may be used to monitor a space to determine occupancy characteristics of the space, such as whether or not the space is occupied and the number of people located within the space. The array of motion sensors may be operatively connected to one or more building system components, such as lighting and HVAC equipment and can be used for adjusting an operating condition of the building system component based on whether a space is occupied.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.

Abstract: A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.

Abstract: A lens for lighting installations including a lenticular body having a planar light input surface and a curved light output surface, with the lenticular body providing a light propagation path from the input surface to the output surface along a lens axis. The curvature values of the output surface includes peak values at the peripheral region and at least one valley value at the central region.

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

Abstract: An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: An ambient light detector, a detector array and a method are disclosed. In an embodiment an ambient light sensor includes a first plurality of sensor elements, each sensor element configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, wherein the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and wherein a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

Abstract: The present invention relates to heteroleptic complexes comprising a phenylimidazole or phenyltriazole unit bonded via a carbene bond to a central metal atom, and phenylimidazole ligands attached via a nitrogen-metal bond to the central atom, to OLEDs which comprise such heteroleptic complexes, to light-emitting layers comprising at least one such heteroleptic complex, to a device selected from the group consisting of illuminating elements, stationary visual display units and mobile visual display units comprising such an OLED, to the use of such a heteroleptic complex in OLEDs, for example as emitter, matrix material, charge transport material and/or charge blocker.

Abstract: An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 ?m.

Abstract: The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation, a carrier on which the semiconductor chip is arranged, a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and a second encapsulation body, wherein the first encapsulation body has a first thickness above the semiconductor chip and has a second thickness laterally spaced from the semiconductor chip, the first thickness is less than the second thickness, a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and the second encapsulation body is arranged on the first encapsulation body.

Abstract: A method of producing optoelectronic components includes providing a carrier; arranging optoelectronic semiconductor chips on the carrier; forming a conversion layer for radiation conversion on the carrier, wherein the optoelectronic semiconductor chips are surrounded by the conversion layer; and carrying out a singulation process to form separate optoelectronic components, wherein at least the conversion layer is severed.

Abstract: An optoelectronic device includes at least one optoelectronic semiconductor chip that emits radiation, at least one metallic reflecting surface, at least one functional component having a component surface different from the metallic reflecting surface, and a barrier layer stack for protection against corrosive gases arranged both on the at least one metallic reflecting surface and the component surface, wherein the barrier layer stack includes at least one inorganic oxide, oxynitride or nitride layer and at least one plasma-polymerized siloxane layer.