Abstract: A storage battery is charged with power supplied from at least one of a commercial power system and an independent power source, and supplies the charged power to a plurality of electric devices or the commercial power system. A control unit switches the operation state of the storage battery to either charging or discharging, and switches connection destinations of the storage battery. When the commercial power system is not in a power outage state, the control unit supplies power from the storage battery to the electric devices or the commercial power system only if the remaining level of the storage battery exceeds a reference value.

Abstract: A semiconductor device, includes a first substrate having a main surface and a rear surface opposing to the main surface, a first circuit including a plurality of transistors formed over the main surface, a first insulating film formed over the main surface to cover the first circuit, a first inductor formed in the first insulating film over the main surface, the first inductor being electrically connected to the first circuit; and a bonding pad formed over the main surface, the bonding pad being located at a first area, the first inductor being located at a second area, the first area being different from the second area in a plan view, and a second substrate having a main surface, a rear surface opposing to the main surface and a second inductor formed over the main surface.

Abstract: A solid-state image sensing device according to the invention which can reduce an instantaneous current occurring in transferring image digital signals from analog-digital converters to registers to reduce noise sneaking into the analog-digital converters and a pixel array includes a pixel array, a vertical scanning circuit, a plurality of column ADCs, a plurality of registers, and control signal generation units. The control signal generation units are provided for respective groups into which the column ADCs and the registers disposed on one side of the pixel array are divided, and generate control signals of different timings, for respective units including at least one group, of transfer of converted image digital signals to the registers from the column ADCs operating in parallel.

Abstract: A delta-sigma A/D converter having plural input channels comprises a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.

Abstract: There is a need for providing a battery-less integrated circuit (IC) card capable of operating in accordance with a contact usage or a non-contact usage, preventing coprocessor throughput from degrading despite a decreased clock frequency for reduced power consumption under non-contact usage, and ensuring high-speed processing under non-contact usage. A dual interface card is a battery-less IC card capable of operating in accordance with a contact usage or a non-contact usage. The dual interface card operates at a high clock under contact usage and at a low clock under non-contact usage. A targeted operation comprises a plurality of different basic operations. The dual interface card comprises a basic arithmetic circuit group. Under the contact usage, the basic arithmetic circuit group performs one basic operation of the targeted operation at one cycle. Under the non-contact usage, the basic arithmetic circuit group sequentially performs at least two basic operations of the targeted operation at one cycle.

Abstract: To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground.

Abstract: A semiconductor device includes a memory cell array including a plurality of memory array basic units. A first bus for transfer of address/control signals, includes a first buffer circuit operating as a pipeline register. A second bus for bidirectional transfer of write/read data, includes a second buffer circuit operating as a pipeline register. A first control circuit sequentially sends the address/control signals on the first bus, and a second control circuit sequentially sends/receives write/read data on the second bus.

Abstract: There is provided a semiconductor device which is simple in configuration and resistant to tampering. A user input unit receives an authentication code input by a user. A CPU determines whether a user's access is legal based on the input authentication code and activates an enable signal if the user's access is legal. A normal row decoder decodes the row address specified by the CPU and selects a normal memory cell of any row based on the result of decode. A redundancy row decoder prohibits the selection by the normal row decoder when the specified row address agrees with the row address of a predetermined normal memory cell only if the enable signal is activated and selects a redundant memory cell of any row.

Abstract: To provide a semiconductor device and a mobile terminal device capable of operating with stability. A semiconductor device includes an HSIC physical layer circuit fixedly connected to another semiconductor device through a bus line, a USB link control unit that operates with either a USB host function or a USB device function, and link-connects to the another semiconductor device, a nonvolatile storage unit that stores selection data, the selection data being used to select the USB function with which the USB link control unit operates, and a semiconductor substrate on which the HSCI physical control unit, the USB link control unit, and the nonvolatile storage unit are formed.

Abstract: In a semiconductor device including a seal ring area containing multiple seal rings are coupled to each other at equal intervals via bridge patterns, improper local relocation of bridge patterns may reduce the reliability of the semiconductor device. A semiconductor device has a first group containing a predetermined number of the bridge patterns spaced at a first interval and a second group containing a predetermined number of the bridge patterns spaced at the first interval, the second group being located at a second interval from the first group. The second interval is larger than the first interval.

Abstract: A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.

Abstract: Provided is a memory control technique for avoiding that the issue of a refresh command and the issue of a calibration command are arranged in succession. The memory control circuit issues a refresh command to make a request for a refresh operation based on a set refresh cycle, and issues a calibration command to make a request for a calibrating operation based on a set calibration cycle, for which the control function of suppressing the issue of the calibration command only for a given time after the issue of the refresh command, and suppressing the issue of the refresh command only for a given time after the issue of the calibration command is adopted.

Abstract: The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

Abstract: Replacement metal gates well suited for self-aligned contact formation are made by replacing the dummy gate with a recessed polysilicon layer and then effecting an aluminum-polysilicon substitution. The resulting upper polysilicon layer is easily removed from the recessed aluminum layer, which can then be protected with a protective dielectric layer for subsequent formation of a source or drain contact hole.

Abstract: In an exemplary aspect, the present invention provides a semiconductor memory device including sense amplifiers that drive bit lines to which memory cells are connected, and driver transistors that supply a power supply to the sense amplifiers, wherein the sense amplifiers are arranged in rows and constitutes a first sense-amplifier row in which transistors of a first conductive type are arranged and a second sense-amplifier row in which transistors of a second conductive type are arranged, and the driver transistors constitutes at least one transistor row including a first driver transistor of the first conductive type corresponding to the first sense-amplifier row and a second driver transistor of the second conductive type corresponding to the second sense-amplifier row between the first sense-amplifier row and the second sense-amplifier row.

Abstract: A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode is formed over a semiconductor substrate via an insulating film. The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film. Metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1×1013 to 2×1014 atoms/cm2.

Abstract: A video signal processing apparatus (and method) includes a section determination unit which detects a non-equidistant section having different intervals between a plurality of sample points set for a range from a minimum signal level to a maximum signal level of a video signal to be inputted, correction level holding unit which holds a signal level of a video signal after correction for each sample point as a correction level, and an interpolation computation unit which obtains a signal level of the video signal after correction corresponding to the signal level of the inputted video signal by executing cubic interpolation computation with reference to the correction level held by the correction level holding unit.

Abstract: A semiconductor device includes a substrate, an internal circuit including a plurality of transistors provided over the substrate, an insulating film provided over the substrate, a bonding pad provided over the insulating film, an inductor being formed in the insulating film, the inductor carrying out a signal transmission/reception to/from an external device in a non-contact manner by an electromagnetic induction and being electrically coupled to the internal circuit. The inductor includes a first conducting layer, and the bonding pad includes a second conducting layer. The first conducting layer includes a lower level layer than the second conducting layer in a thickness direction of the substrate. In a plan view, the inductor includes a first portion overlapping the bonding pad and a second portion not overlapping the bonding pad.

Abstract: Characteristics of a semiconductor device are improved. A semiconductor device of the present invention includes: (a) a MISFET arranged in an active region formed of a semiconductor region surrounded by an element isolation region; and (b) an insulating layer arranged below the active region. Further, the semiconductor device includes: (c) a p-type semiconductor region arranged below the active region so as to interpose the insulating layer; and (d) an n-type semiconductor region whose conductivity type is opposite to the p-type, arranged below the p-type semiconductor region. And, the p-type semiconductor region includes a connection region extending from below the insulating layer, and the p-type semiconductor region and a gate electrode of the MISFET are connected to each other by a shared plug which is an integrally-formed conductive film extending from above the gate electrode to above the connection region.

Abstract: To provide a semiconductor device and a manufacturing method thereof achieving both reduction in ON resistance and increase in breakdown voltage and suppressing a short circuit. The semiconductor device has, in its semiconductor substrate having a main surface, a p? type epitaxial region, n? type epitaxial region, n type offset region, and p type body region configuring a pn junction therewith; and further has a p+ type buried region between the p? type and n? type epitaxial regions, isolation trench extending from the main surface to the p+ type buried region, and trench sidewall n type region formed on at least a portion of the sidewall of the isolation trench. The n type impurity concentration in the trench sidewall n type region is higher than that in the n? type epitaxial region. The trench sidewall n type region extends along the sidewall to reach the p+ type buried region.