Abstract: An object of the present invention is to monitor the load of a bus with high accuracy. A bus load monitoring device includes a determination circuit that determines whether the bus load monitoring device is in a bus-off state or a normal state, a first monitoring circuit that monitors the load of a bus when the bus load monitoring device is in the normal state, a second monitoring circuit that monitors the load of the bus when the bus load monitoring device is in the bus-off state, and a switching circuit that switches a monitoring circuit monitoring the load of the bus to the first monitoring circuit or the second monitoring circuit on the basis of the determination result of the determination circuit.

Abstract: A semiconductor device which provides improved reliability. The semiconductor device includes: a wiring substrate having a first surface and a second surface opposite to the first surface; a chip condenser built in the wiring substrate, having a first electrode and a second electrode; a first terminal and a second terminal disposed on the first surface; and a third terminal disposed on the second surface. The semiconductor device further includes: a first conduction path for coupling the first terminal and the third terminal; a second conduction path for coupling the first terminal and the first electrode; a third conduction path for coupling the third terminal and the first electrode; and a fourth conduction path for coupling the second terminal and the first electrode.

Abstract: A semiconductor memory device including a pair of first bit lines extended in a first direction, a pair of second bit lines extended in the first direction, a first word line extended in a second direction crossing the first direction, a second word line extended in the second direction, a memory cell surrounded by the first bit line, the second bit line, the first word line, and the second word line, and including a drive transistor, a first transfer transistor coupled with one of the pair of first bit lines, and having a gate coupled with the first word line, a second transfer transistor coupled with one of the pair of second bit lines, and having a gate coupled with the second word line, and a load transistor, a write drive circuit that transfers data to the memory cell.

Abstract: A semiconductor device including a package substrate having, at the periphery of the main surface thereof, bonding leads disposed in a row, a semiconductor chip mounted inside of the row of the bonding leads on the main surface of the package substrate, wires for connecting pads of the semiconductor chip and the bonding leads of the substrate, a sealing body for resin sealing the semiconductor chip and the wires, and solder bumps disposed on the back surface of the package substrate. The top of a loop of each of the wires is disposed outside the wire connecting portion so that the wire connection between the bonding leads and the pads of the semiconductor chip has a stable loop shape to prevent wire connection failure.

Abstract: To improve identification precision of a motor constant that controls a motor by vector control. A parameter identifier sets an offset voltage of a DC component as a first d-axis target voltage, and detects a d-axis current that flows accordingly as an offset current. The parameter identifier also sets a voltage obtained by superimposing an identification signal of a predetermined AC component on the first d-axis target voltage as a second d-axis target voltage, and detects the d-axis current that flow accordingly. The parameter identifier then identifies the motor constant using a voltage obtained by subtracting the first d-axis target voltage from the second d-axis target voltage and a current obtained by subtracting the offset current from the d-axis current as inputs.

Abstract: On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.

Abstract: A semiconductor storage device provided can increase a write margin and suppress increase of a chip area. The semiconductor storage device includes plural memory cells arranged in a matrix; plural bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit which transmits data to a bit-line pair of a selected column according to write data; and a write assist circuit which drives a bit line on a low potential side of the bit-line pair of a selected column to a negative voltage level. The write assist circuit includes first signal wiring; a first driver circuit which drives the first signal wiring according to a control signal; and second signal wiring which is coupled to the bit line on the low-potential side and generates a negative voltage by the driving of the first driver circuit, based on inter-wire coupling capacitance with the first signal wiring.

Abstract: A semiconductor device has a peak value storage register, a threshold value storage register, a peak determination circuit, and an end timing determination circuit. The peak determination circuit determines whether or not to update a value stored in the peak value storage register. Further, the peak determination circuit ends an operation if the end timing determination circuit determines that an end timing has arrived. The peak value storage register updates a storage value if the peak determination circuit determines to perform updating. The end timing determination circuit determines that the end timing of the operation of the peak determination circuit has arrived if the value of an input signal becomes smaller than a value obtained by decreasing or increasing the value stored in the peak value storage register by a value corresponding to a threshold value stored in the threshold value storage register.

Abstract: An image processing apparatus includes an image processing unit that calculates two types of image data from one image data and outputs the calculated image data, a data combination unit that combines the two type of data supplied from the image processing unit and outputs the combined data to one terminal, an output buffer that adjusts an output timing of the combined data according to an instruction supplied from bus arbitration means for arbitrating a bus, and a data distribution unit that outputs the combined data output from the output buffer to the bus in a form of the combined data, or distributes the combined data and outputs the distributed data to the bus according to an external combination distribution instruction.

Abstract: In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo region is formed adjacent to the third source-drain region and a fourth halo region is formed adjacent to a fourth source-drain region. The second halo region is set to have an impurity concentration higher than the impurity concentration of the first halo region. The third halo region is set to have an impurity concentration higher than the impurity concentration of the fourth halo region. The impurity concentration of the first halo region and the impurity concentration of the fourth halo region are different from each other.

Abstract: An area of a semiconductor device having a FINFET can be reduced. The drain regions of an n-channel FINFET and a p-channel FINFET are extracted by two second local interconnects from a second Y gird between a gate electrode and a dummy gate adjacent thereto, to a third Y grid adjacent to the second Y gird. These second local interconnects are connected by a first local interconnect extending in the X direction in the third Y grid. According to such a cell layout, although the number of grids is increased by one because of the arrangement of the first local interconnect, the length in the X direction can be reduced. As a result, the cell area of the unit cell can be reduced while a space between the first and second local interconnects is secured.

Abstract: A magnetometer includes a diamond sensor, an excitation light source, a diamond sensor case, and a photodiode. The excitation light source irradiates the diamond sensor case with excitation light. In the diamond sensor case, a reflection film which reflects excitation light is formed on either a front surface or an inner surface, and the diamond sensor is stored. The photodiode detects intensity of fluorescence generated from the diamond sensor. The diamond sensor case includes a fluorescence output window and an excitation-light reception window. Fluorescence generated by the diamond sensor is output through the fluorescence output window. Excitation light emitted by the excitation light source is received through the excitation-light reception window. The photodiode is provided on a side of a second surface opposite to a first surface which is a magnetism measurement surface of the diamond sensor.

Abstract: A semiconductor device including an IE-type trench gate IGBT requires to be improved in IE effect to reduce on voltage. The semiconductor device includes a trench gate electrode or a trench emitter electrode between an active cell region and an inactive cell region. The trench gate electrode and the trench emitter electrode are provided across the inactive cell region.

Abstract: In order to improve the performance of a solid-state imaging device, the solid-state imaging device has a pixel including a photoelectric conversion unit and a transfer transistor, and fluorine is introduced to a gate electrode and a drain region (extension region and n+-type semiconductor region) of the transfer transistor included in the pixel.

Abstract: When the same processing as initial training is executed to cope with fluctuation in the timing of a signal, the performance of a semiconductor device utilizing the relevant memory is degraded. A delay adjustment circuit adjusts a delay amount of write data to a memory device. A control circuit sets a delay amount of the delay adjustment circuit. A storage unit stores a delay amount. The control circuit corrects the delay amount stored in the storage unit based on a writing result of write data obtained when the delay amount stored in the storage unit or an amount based on that delay amount is set on the delay adjustment circuit.

Abstract: To improve a performance of a semiconductor device, a semiconductor device includes a lead electrically coupled to a semiconductor chip via a wire. An inner portion of the lead, the semiconductor chip, and the wire are sealed by a sealing body (a resin sealing body). The wire is bonded to an upper surface of a wire bonding portion of the inner portion of the lead. A metal film is formed on a lower surface of the inner portion of the lead, which is on an opposite side to the upper surface. No metal film is formed on the upper surface of the wire bonding portion.

Abstract: An IF filter band-limits an intermediate frequency signal outputted from a mixer. An AFC unit controls the oscillation frequency of a PLL so that the frequency of the intermediate frequency signal is a predetermined frequency. When the AFC unit controls the oscillation frequency of the PLL, a band control unit controls the passing characteristic of the IF filter to the passing characteristic of a wide band, and after the completion of the control, controls the passing characteristic of the IF filter to the passing characteristic of a narrow band. A frequency correction unit refers to a filter information storage unit, and corrects the oscillation frequency controlled by the AFC unit according to the difference between the center frequency of the passband of the passing characteristic of the wide band and the center frequency of the passband of the passing characteristic of the narrow band.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.

Abstract: There is to provide a semiconductor device capable of realizing a start time diagnosis on a non-volatile memory without any external device and any non-volatile memory out of a diagnosis target. The non-volatile memory includes an address space formed by addresses continuously read and a reservation address formed by a single or a plurality of addresses, read after the address space. A previously calculated value fixed data is stored in the reservation address. When all the data stored in the address space and the value fixed data are compressed using a predetermined initial value according to a predetermined compression algorithm, the value fixed data is the data for converging the compression value to a predetermined fixed value (for example, 0).

Abstract: To discriminate between a circuit where a failure does not occur and a circuit where a failure might occur, a wireless communication device has tested units which belong to a transmission side circuit, tested units which belong to a reception side circuit, a test signal generation unit for generating a test signal, a test signal reception unit for receiving a test signal, a test signal determination unit for determining whether or not the test signal received by the test signal reception unit is normal, and test signal transfer units for transferring a test signal from the transmission side circuit to the reception side circuit.